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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/79575完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 吳育任(Yuh-Renn Wu) | |
| dc.contributor.author | Cheng-Han Ho | en |
| dc.contributor.author | 何承翰 | zh_TW |
| dc.date.accessioned | 2022-11-23T09:04:08Z | - |
| dc.date.available | 2022-09-16 | |
| dc.date.available | 2022-11-23T09:04:08Z | - |
| dc.date.copyright | 2021-10-23 | |
| dc.date.issued | 2021 | |
| dc.date.submitted | 2021-09-17 | |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/79575 | - |
| dc.description.abstract | 微型的發光二極體在下一個世代中會是一個好的照明設備。它具有功耗低、高解析度等優勢。而發光設備需要由紅、藍、綠等三原色組成。而這三原色的發光二極體所需要的材料不同。紅光是用磷化鋁鎵铟為材料，而藍綠光是以氮化鎵為材料。此外，隨著發光二極體的微縮下，側壁表面複合效應對發光二極體的影響會更嚴重。以往的研究報告指出，側壁表面複合效應在紅光的發光二極體下會比氮化鎵為材料的藍綠光二極體更加嚴重，因為磷化鋁鎵铟材料具有更高的載子遷移率和更輕的有效質量。因此，載子會很快的擴散到側壁並且透過側壁的缺陷進行複合。在這篇論文中，我們會去探討載子遷移率和等效質量在不同磊晶層中對於效率下降的比重。在結果中，我們發現大部分的載子會在電子電洞層中就流進側壁的缺陷中進行複合，使得只有少部分載子能留進去發光層造成效率低下。 側壁表面複合效應也會影響氮化鎵發光二極體，但氮化鎵發光二極體的效率受強壓電場影響較大而不是側壁表面複合效應。壓電場會導致量子井的能障更高，使發光二極的的開啟電壓更高。然而，氮化铟鎵和藍寶石基板之間較大的晶格失配引起的缺陷將導致發光二極體上會產生V型缺陷。與c軸方向上的磊晶相比，V形缺陷將具有更低的極化場和更低的量子井能障；因此，電流很容易從V型缺陷流入c軸方向上的量子井內並降低開啟電壓。我們將模擬V形缺陷的不同密度和直徑去看發光二極體的效率變化，而發現藍綠發光二極體受到V型缺陷的影響不同。藍光的極化場較小，因此開啟電壓只會受到V型缺陷的密度影響而效率只會受到V型缺陷直徑影響。而綠光發光二極體的極化場較強，所以開啟電壓和效率會同時受到V型缺陷的密度和直徑影響。 | zh_TW |
| dc.description.provenance | Made available in DSpace on 2022-11-23T09:04:08Z (GMT). No. of bitstreams: 1 U0001-1609202115555400.pdf: 15416851 bytes, checksum: e872f13868c9d9b23df9e5e73f7959e5 (MD5) Previous issue date: 2021 | en |
| dc.description.tableofcontents | "Acknowledgements i 摘要 ii Abstract iv Contents vi List of Figures ix List of Tables xiv Chapter 1 Introduction 1 1.1 Background . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.2 Motivation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1.2.1 The Sidewall Effect to the μ-LED . . . . . . . . . . . . . . . . . . 2 1.2.2 Random Alloy Fluctuation Problem . . . . . . . . . . . . . . . . . 4 1.2.3 Quantum Confined Stark Effect . . . . . . . . . . . . . . . . . . . . 5 1.2.4 The V-shape Pits to the LEDs . . . . . . . . . . . . . . . . . . . . . 8 1.2.5 Droop Effect . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 1.2.5.1 Auger recombination . . . . . . . . . . . . . . . . . . 12 1.2.5.2 Carrier leakage . . . . . . . . . . . . . . . . . . . . . . 14 1.3 Thesis overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Chapter 2 Methodology 17 2.1 Computation algorithm . . . . . . . . . . . . . . . . . . . . . . . . . 17 2.1.1 Methodology of Analyzing 2D Solver . . . . . . . . . . . . . . . . 18 2.1.2 Localization Landscape Solver . . . . . . . . . . . . . . . . . . . . 20 2.1.3 Random Indium Fluctuation Generator . . . . . . . . . . . . . . . . 21 Chapter 3 The Sidewall Effect to the Different Size of Vertical μ-LEDs 23 3.1 The Structure of μ-LEDs for Simulation . . . . . . . . . . . . . . . . 24 3.2 The Definition of the Sidewall Region on the 2D Simulation Structure of the μ-LEDs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 3.3 The Influence of Size Shrinking for the Red μ-LED. . . . . . . . . . 29 3.4 The Influence of Size Shrinking for the Blue μ-LED. . . . . . . . . . 33 3.5 The Distribution of Mobility to the Blue μ-LED. . . . . . . . . . . . 36 3.6 The Influence of Random Alloy Potential Fluctuation, Piezoelectric Field, and p-n Layer Mobility. . . . . . . . . . . . . . . . . . . . . . 39 3.7 Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 Chapter 4 The Efficiency and Forward Voltage of the Blue and Green Lateral LED with V-shape Pit in QWs 47 4.1 The V-shaped Pits Definition to the Lateral LED . . . . . . . . . . . 49 4.2 The Performance of the V-shaped Pit on the LED . . . . . . . . . . . 55 4.3 The Forward Voltage of the V-shaped LED . . . . . . . . . . . . . . 60 4.3.1 The Forward Voltage of Blue LED . . . . . . . . . . . . . . . . . . 60 4.3.2 The Forward Voltage of Green LED . . . . . . . . . . . . . . . . . 64 4.4 The Efficiency of LED on V-shaped Pit Structure . . . . . . . . . . . 67 4.4.1 The Efficiency in the Blue LED . . . . . . . . . . . . . . . . . . . 67 4.4.2 The Efficiency in the Green LED . . . . . . . . . . . . . . . . . . . 72 4.5 Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77 Chapter 5 Conclusion 79 References 81" | |
| dc.language.iso | en | |
| dc.title | 探討隨機合金擾動及V型結構密度在紅綠藍發光二極體上的效率影響 | zh_TW |
| dc.title | Study of the Influences of Random Alloy Fluctuation and the V-shaped Pits Density to the Efficiency of RGB LEDs | en |
| dc.date.schoolyear | 109-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 吳肇欣(Hsin-Tsai Liu),賴韋志(Chih-Yang Tseng),洪瑞華 | |
| dc.subject.keyword | 磷化鋁鎵铟,氮化鎵,微發光二極體,壓電效應,側壁效應,V 形缺陷, | zh_TW |
| dc.subject.keyword | AlGaInP,GaN,micro-LED,piezoelectric effect,sidewall effect,shaped pits, | en |
| dc.relation.page | 107 | |
| dc.identifier.doi | 10.6342/NTU202103212 | |
| dc.rights.note | 同意授權(全球公開) | |
| dc.date.accepted | 2021-09-21 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
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| U0001-1609202115555400.pdf | 15.06 MB | Adobe PDF | 檢視/開啟 |
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