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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 管傑雄 | |
dc.contributor.author | Jung-Hsi Wang | en |
dc.contributor.author | 王榮熙 | zh_TW |
dc.date.accessioned | 2021-07-11T15:30:07Z | - |
dc.date.available | 2023-08-23 | |
dc.date.copyright | 2018-08-23 | |
dc.date.issued | 2018 | |
dc.date.submitted | 2018-08-16 | |
dc.identifier.citation | [1] Valentine, Jason, et al. 'Three-dimensional optical metamaterial with a negative refractive index.' nature 455.7211 (2008): 376.
[2] Manfrinato, Vitor R., et al. 'Determining the resolution limits of electron-beam lithography: direct measurement of the point-spread function.' Nano letters 14.8 (2014): 4406-4412. [3] Bojko, R. J., and B. J. Hughes. 'Quantitative lithographic performance of proximity correction for electron beam lithography.' Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena 8.6 (1990): 1909-1913. [4] Chen, Bo Han, et al. 'GaN metalens for pixel-level full-color routing at visible light.' Nano letters 17.10 (2017): 6345-6352. [5] Wang, Shuming, et al. 'Broadband achromatic optical metasurface devices.' Nature communications 8.1 (2017): 187. [6] Bomzon, Ze’ev, et al. 'Space-variant Pancharatnam–Berry phase optical elements with computer-generated subwavelength gratings.' Optics letters 27.13 (2002): 1141-1143. [7] Canning, J., and G. Peng. 'Proceedings of SPIE-The International Society for Optical Engineering: Introduction.' Proceedings of SPIE-The International Society for Optical Engineering. 2012. [8] Wikipedia, sacanning electron microscope [9] Zentgraf, Thomas. 'Imaging the rainbow.' Nature nanotechnology 13.3 (2018): 179. [10] Chen, Wei Ting, et al. 'A broadband achromatic metalens for focusing and imaging in the visible.' Nature nanotechnology 13.3 (2018): 220. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/78931 | - |
dc.description.abstract | 超穎透鏡具有體積小且重量輕的優點,在傳統光學元件中,若要達到消色差或是其他光學效果,必須透過多個不同鏡組來實現,這不僅會增加重量,而且現在的光學透鏡的材料大多都是玻璃,這會造成另外一項缺點就是容易損毀。穿透式超穎透鏡利用次波長超穎表面組成,其可控制之波段為可見光波段。
本論文之超穎透鏡選用氮化鎵當作介電材料,利用電感耦合式電漿乾蝕刻蝕刻氮化鎵深度800奈米。在乾蝕刻過程中遇到時側壁傾斜的問題,造成其光學表現不佳,本論文將對於蝕刻氮化鎵之側壁垂直度進行探討。 最後以雙面拋光的藍寶石做為基板,且以氮化鎵做為介電質矩形結構材料,製作而成的可見光波段穿透式超穎透鏡有三種不同的焦距以及NA值,所製成之最成功的超穎透鏡有良好的消色差效果,以及其平均效率可以達到50%。 且透過1951 USAF分辨力測試圖,測量其解析度,其中最成功的樣品可成像至長度2.19微米大小之影像,並利用投影實際照片確認此超穎透鏡之色彩表現。 關鍵詞:超穎透鏡、消色差、氮化鎵、電感耦合式電漿乾蝕刻、電子束微影 | zh_TW |
dc.description.abstract | Metalenses have the advantages of small size and light weight, in the traditional optical components, to achieve achromatic or other optical effects, must be achieved through a number of different sets of mirrors, which will not only increase the weight, and now most of the optical lenses are made of glass. It is easy to break. The penetrating metalens is composed of the subwavelength metasurface, and its controllable band is visible optical band.
In this thesis, gallium nitride is selected as dielectric material, and the depth of gallium nitride is etched by inductively coupled plasma reactive-ion etching of 800 nm. In the process of dry etching, the side wall inclination is encountered, which results in poor optical performance, and the side wall verticality of the etching gallium nitride is discussed in this thesis. Finally, the two-sided polished sapphire as the base plate, with gallium nitride as dielectric rectangular structure material, the visible optical band penetrating metalens has three different focal lengths and NA values, the most successful metalens has good achromatic effect, and its average efficiency can reach 50%. The resolution of the 1951 USAF resolution target is measured, and the most successful samples can be imaged to a length of 2.19 microns, and the color representation of this super lens is confirmed by the actual projection of the image. Keyword:metalense、achromatic、GaN、inductively coupled plasma reactive-ion etching、E-beam lithography | en |
dc.description.provenance | Made available in DSpace on 2021-07-11T15:30:07Z (GMT). No. of bitstreams: 1 ntu-107-R05945034-1.pdf: 3851960 bytes, checksum: 2b484286f9f8b2e9b519b5033d7fbd05 (MD5) Previous issue date: 2018 | en |
dc.description.tableofcontents | 目錄
口試委員審定書 I 摘要 II Abstract III 致謝 IV 圖目錄 VII 表目錄 IX 第一章 超穎表面之原理與發展 1 1-1 前言 1 1-1-1 色散、色差以及傳統光學元件 1 1-1-2 超穎材料(Metamaterial)與超穎表面(Metasurface) 1 1-2 研究動機 3 1-2-1 廣義司乃爾定律[2](Generized Snell’s Law) 3 1-2-2 穿透式介電質超穎表面[3] 4 1-2-3 穿透式介電質超穎表面4[5] 6 1-2-4 反射式消色差超穎表面7 10 1-2-5 小結與研究動機 11 1-3 章節概要 12 第二章 電磁波種類推導及表示工具簡介 13 2-1 時變場瑪克斯威爾方程組簡介 13 2-1-1穩態場 13 2-1-2時變場 13 2-1-4無源場之電磁波動方程式及時諧場之表示型式 17 2-1-4本質阻抗及虛數波數 19 2-2 平面電磁波 20 2-2-1單一平面電磁波 20 2-2-1電磁波之極化種類 21 2-2-2電磁波在導體中傳播 24 2-2-2電磁波在電離層中傳播 26 2-2-3電磁波之群速與相速 27 2-2-3波映廷向量與其平均能量 28 2-2-4電磁波入射良導體界面 30 2-2-5電磁波垂直入射介電質界面 35 2-2-6電磁波斜向入射介電質界面 40 2-3 電磁波之極化狀態 44 2-3-1斜極化橢圓 44 2-3-2線性水平偏振光(Linear Horizontally Polarized Light)與垂值偏振光(Linear Vertically Polarized Light) 45 2-3-3線性±45°偏振光(Linearly ±45° Polarized Light) 46 2-3-4橢圓偏振光(Elliptical Polarized Light) 46 2-3-5圓偏振光(Elliptical Polarized Light) 46 第三章 寬頻消色差超穎透鏡製程與量測系統 47 3-1 製成機台 47 3-1-1電漿輔助化學氣相沉積(Plasma-Enhanced Chemical Vapor Deposition, PECVD) 47 3-1-2旋轉塗佈機(Spin coaters) 48 3-1-3微影技術與電子束微影系統(E-Beam Lithography) 49 3-1-4繪圖軟體(AutoCAD) 51 3-1-6電漿輔助化學氣相沉積(Metal-organic Chemical Vapor Deposition, MOCVD) 53 3-1-7反應離子蝕刻(Reactive-Ion Etching, RIE) 54 3-1-7電感式偶合電漿蝕刻(Inductively Coupled Plasma-Reactive Ion Etching, ICP-RIE) 55 3-2 量測系統 56 3-2-1掃描式電子顯微鏡(Scanning Electron Microscopy) 56 3-2-1光強度量測系統 57 3-3製程步驟 58 第四章 電感耦合式電漿乾蝕刻 62 4-1 電感耦合式電漿乾蝕刻機制即優化側壁角度 62 4-2 優化側壁過程與結果 63 第五章 設計原理與實驗量測結果 67 5-1 色差與消色差透鏡 67 5-2 寬頻可見光波段消色差超穎透鏡 68 5-2-1單一波長超穎透鏡元件之位置與相位分配 68 5-3 CST模擬 75 5-4 量測結果 81 5-4-1可見光波段消色差超穎透鏡之SEM圖 81 5-4-2可見光波段消色差超穎透鏡之光學量測表現圖 82 第六章 總結與未來展望 87 6-1 總結 87 6-2 未來研究方向 87 參考文獻 88 | |
dc.language.iso | zh-TW | |
dc.title | 可見光寬頻寬能隙超穎透鏡 | zh_TW |
dc.title | Broadband Wide-bandgap Metalenses in The Visible | en |
dc.type | Thesis | |
dc.date.schoolyear | 106-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 藍彥文,孫允武,孫建文,蘇文生 | |
dc.subject.keyword | 超穎透鏡,消色差,氮化鎵,電感耦合式電漿乾蝕刻,電子束微影, | zh_TW |
dc.subject.keyword | metalense,achromatic,GaN,inductively coupled plasma reactive-ion etching,E-beam lithography, | en |
dc.relation.page | 88 | |
dc.identifier.doi | 10.6342/NTU201803825 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2018-08-17 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 生醫電子與資訊學研究所 | zh_TW |
dc.date.embargo-lift | 2023-08-23 | - |
顯示於系所單位: | 生醫電子與資訊學研究所 |
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