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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 陳永芳 | zh_TW |
| dc.contributor.advisor | Yang-Fang Chen | en |
| dc.contributor.author | 程瑜婷 | zh_TW |
| dc.contributor.author | Yu-Ting Cheng | en |
| dc.date.accessioned | 2021-07-11T15:00:21Z | - |
| dc.date.available | 2024-10-02 | - |
| dc.date.copyright | 2019-10-22 | - |
| dc.date.issued | 2019 | - |
| dc.date.submitted | 2002-01-01 | - |
| dc.identifier.citation | 1. Valov, Ilia, et al. "Electrochemical metallization memories—fundamentals, applications, prospects." Nanotechnology 22.25: 254003 (2011).
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Wiersma, D. S. The physics and applications of random lasers. Nat. Phys., 4(5), 359 (2008). 46. Sun, T. M., Wang, C. S., Liao, C. S., Lin, S. Y., Perumal, P., Chiang, C. W., & Chen, Y. F. Stretchable random lasers with tunable coherent loops. ACS Nano, 9(12), 12436-12441 (2015). 47. Balachandran, R. M., Pacheco, D. P., & Lawandy, N. M. Laser action in polymeric gain media containing scattering particles. Appl. Optics, 35(4), 640-643 (1996). 48. Lawandy, N. M., Balachandran, R. M., Gomes, A. S. L., & Sauvain, E. Laser action in strongly scattering media. Nature, 368(6470), 436 (1994). 49. Liao, Y. M., Lai, Y. C., Perumal, P., Liao, W. C., Chang, C. Y., Liao, C. S., ... & Chen, Y. F. Highly stretchable label‐like random laser on universal substrates. Adv. Mate. Technol., 1(6), 1600068 (2016). 50. Auzel, F., & Goldner, P. Coherent light sources with powder: Stimulated amplification versus super-radiance. J. Alloys and Comp., 300, 11-17 (2000). 51. Polson, R. C., & Vardeny, Z. V. Random lasing in human tissues. Appl. Phys. Lett., 85(7), 1289-1291 (2004). 52. Wiersma, D. S., & Cavalieri, S. Light emission: A temperature-tunable random laser. Nature, 414(6865), 708 (2001). 53. http://www.pse.ntu.edu.tw/resear/super_pages.php?ID=research3&Sn=14 54. https://en.wikipedia.org/wiki/Poly(methyl_methacrylate) 55. Lim, J., Bae, W. K., Kwak, J., Lee, S., Lee, C., & Char, K. Perspective on synthesis, device structures, and printing processes for quantum dot displays. Opt. Mater. Express, 2(5), 594-628 (2012). 56. Tytus, M., Krasnyj, J., Jacak, W., Chuchmała, A., Donderowicz, W., & Jacak, L. Differences between photoluminescence spectra of type-I and type-II quantum dots. In J. Phys. Conf. Ser. (Vol. 104, No. 1, p. 012011). IOP Publishing (2008). 57. Waser R, Dittmann R, Staikov G, Szot K. Redox‐based resistive switching memories–nanoionic mechanisms, prospects, and challenges. Adv. Mater. 21, 2632-2663 (2009). 58. Lin WP, Liu SJ, Gong T, Zhao Q, Huang W. Polymer‐Based Resistive Memory Materials and Devices. Adv. Mater. 26, 570-606 (2014). 59. Luan, F., Gu, B., Gomes, A. S., Yong, K. T., Wen, S., & Prasad, P. N. Lasing in nanocomposite random media. Nano Today., 10(2), 168-192 (2015). | - |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/78498 | - |
| dc.description.abstract | 本研究提出了一個新穎的隨機雷射光唯獨性電阻式隨機存取記憶體之概念。藉由導電橋接隨機存取記憶體之電化學金屬化原理，氧化還原反應後產生銀奈米粒子聚集於含有硒化鎘/硫化鋅膠體量子點的絕緣層中，外加高於閾值量之光輻射下，可得到隨機雷射之光訊號回饋，此為將導電橋接隨機存取記憶體結合隨機雷射所設計出的唯讀性電寫雙電讀光讀元件。對於隨機雷射光訊號而言，硒化鎘/硫化鋅膠體量子點為其增益介質的螢光材料，然而聚集而成的銀奈米粒子則為散射介質使受激輻射的光強度能夠於增益介質中累增形成隨機雷射訊號。再者，藉由直流電寫下高低阻態以及隨機雷射之強度閾值，可使之成為具有及閘邏輯性之記憶體。此研究成果可視為對於光通訊以及記憶體應用下的重大發展。 | zh_TW |
| dc.description.abstract | This study proposes a novel concept of integration of random laser in non-volatile resistive random access memory (RRAM), which consists of light emitting semiconductor quantum dots (QDs) embedded in an insulating layer. According to the electrochemical metallization (ECM) effect of the conductive bridge random access memory (CBRAM), the agglomeration of silver nanoparticles by the redox reaction are concentrated in the insulating layer during the on/off switching process, which can serve as scattering centers for the emitted light arising from QDs. Under the external radiation with the pumping power density above threshold, the optical signal feedback of random laser can be achieved. This unique feature provides an excellent opportunity for the newly designed RRAM possessing of reading the encoded information electrically and optically. For the occurrence of random laser action, CdSe/ZnS QDs act as the fluorescent materials of the gain medium, and the aggregated silver nanoparticles serve as the scattering centers for the formation of coherent loops, so that the intensity of the stimulated radiation can be amplified for the gain medium to achieve random laser action. Through the capability of both hybrid electric and optical reading, we demonstrate that the RRAM incorporated semiconductor QDs can be used multiple-bits AND gate logic. Our study shown here therefore paves a key step for the development of a variety of ultrahigh speed information technology. | en |
| dc.description.provenance | Made available in DSpace on 2021-07-11T15:00:21Z (GMT). No. of bitstreams: 1 ntu-108-R06222057-1.pdf: 2753086 bytes, checksum: 8b04d26e74aa1934c901b8bedc4723d1 (MD5) Previous issue date: 2019 | en |
| dc.description.tableofcontents | 口試委員會審定書 #
誌謝 i 中文摘要 ii ABSTRACT iii CONTENTS iv LIST OF FIGURES vi Chapter 1 Introduction 1 Chapter 2 Theoretical Background 4 2.1 Redox-Based Resistance Switching Memories 4 2.1.1 Resistance Switching Behaviors 5 2.1.2 Electrochemical Metallization Systems 7 2.2 Theory of Photoluminescence (PL) 9 2.2.1 Band Gap Structure 9 2.2.2 Optical Transition 12 2.3 Laser 14 2.4 Random Laser (RL) 18 2.4.1 Emission Properties 20 2.4.2 Application 23 Chapter 3 Experimental Details 26 3.1 Scanning Electron Microscope (SEM) 26 3.2 Energy-Dispersive X-ray Analysis (EDXA) 28 3.3 Thermal Evaporation 29 3.4 Absorption Spectrophotometer 31 3.5 Electrical Characteristics Measurement 32 3.6 Photoluminescence and Random Laser Measurement 33 3.7 Materials 34 3.7.1 PMMA 34 3.7.2 CdSe/ZnS Colloidal Core-Shell Quantum Dots 34 3.8 Device Fabrication 36 Chapter 4 Results and discussion 37 Chapter 5 Conclusions 48 Reference: 49 | - |
| dc.language.iso | en | - |
| dc.subject | 電化學金屬化 | zh_TW |
| dc.subject | 電阻式隨機存取記憶體 | zh_TW |
| dc.subject | 隨機雷射 | zh_TW |
| dc.subject | 硒化鎘/硫化鋅膠體量子點 | zh_TW |
| dc.subject | RRAM | en |
| dc.subject | random laser | en |
| dc.subject | electrochemical metallization effect | en |
| dc.subject | CdSe/ZnS colloidal quantum dots | en |
| dc.title | 隨機雷射之複合型光電邏輯式電化學金屬化記憶體之整合 | zh_TW |
| dc.title | Integration of Random Laser in Electrochemical Metallization Memories for Hybrid Optic/Electric Logic | en |
| dc.type | Thesis | - |
| dc.date.schoolyear | 108-1 | - |
| dc.description.degree | 碩士 | - |
| dc.contributor.oralexamcommittee | 謝馬利歐;林泰源;沈志霖 | zh_TW |
| dc.contributor.oralexamcommittee | Mario Hofmann;; | en |
| dc.subject.keyword | 隨機雷射,電阻式隨機存取記憶體,電化學金屬化,硒化鎘/硫化鋅膠體量子點, | zh_TW |
| dc.subject.keyword | random laser,RRAM,electrochemical metallization effect,CdSe/ZnS colloidal quantum dots, | en |
| dc.relation.page | 55 | - |
| dc.identifier.doi | 10.6342/NTU201904155 | - |
| dc.rights.note | 未授權 | - |
| dc.date.accepted | 2019-09-26 | - |
| dc.contributor.author-college | 理學院 | - |
| dc.contributor.author-dept | 物理學系 | - |
| dc.date.embargo-lift | 2024-10-22 | - |
| 顯示於系所單位： | 物理學系 | |
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