請用此 Handle URI 來引用此文件:
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/78210
完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 莊東漢(Tung-Han Chuang) | |
dc.contributor.author | Yu-Zhen He | en |
dc.contributor.author | 何禹箴 | zh_TW |
dc.date.accessioned | 2021-07-11T14:46:05Z | - |
dc.date.available | 2021-10-14 | |
dc.date.copyright | 2016-10-14 | |
dc.date.issued | 2016 | |
dc.date.submitted | 2016-07-17 | |
dc.identifier.citation | [1] G.G. Harman, Reliability and Yield Problems of Wire Bonding in Microelectronics. National Inst. of Standards and Technology, International Society for Hybrid Microelectronics, 1991, pp. 49-89.
[2] Hsueh, H. W., Hung, F. Y., Lui, T. S., Chen, L. H., and Chen, K. J., Intermetallic phase on the interface of Ag-Au-Pd/Al structure. Advances in Materials Science and Engineering, 2014. 2014: p. 6. [3] Wei, T. C., A. R. Daud , Mechanical and electrical properties of Au-Al and Cu-Al intermetallics layer at wire bonding interface. Journal of Electronic Packaging, 2003. 125(4): p. 617-620. [4] Harman, G., J. Albers, The Ultrasonic Welding Mechanism as Applied to Aluminum-and Gold-Wire Bonding in Microelectronics. Parts, Hybrids, and Packaging, IEEE Transactions on, 1977. 13(4): p. 406-412. [5] Ratchev, P., S. Stoukatch, and B. Swinnen, Mechanical reliability of Au and Cu wire bonds to Al, Ni/Au and Ni/Pd/Au capped Cu bond pads. Microelectronics Reliability, 2006. 46(8): p. 1315-1325. [6] Breach, C. D., Wulff, F., and Tok, C. W. , An unusual mechanical failure mode in gold ballbonds at 50μm pitch due to degradation at the Au–Au 4 Al interface during ageing in air at 175° C. Microelectronics Reliability, 2006. 46(2): p. 543-557. [7] Nguyen, L. T., McDonald, D., Danker, A. R., and Ng, P., Optimization of copper wire bonding on Al-Cu metallization. Components, Packaging, and Manufacturing Technology, Part A, IEEE Transactions on, 1995. 18(2): p. 423-429. [8] Kamijo, A., Igarashi, H., Silver wire ball bonding and its ball/pad interface characteristics. In 35th Proc. IEEE Electronics Conference, Washington, DC, 1985, pp. 91-97. [9] Fan, H.J., U. Gösele, and M. Zacharias, Formation of Nanotubes and Hollow Nanoparticles Based on Kirkendall and Diffusion Processes: A Review. Small, 2007. 3(10): p. 1660-1671. [10] Jellison, J. L., Susceptibility of Microweids in Hybrid Microcincuits to Corrosion Degradation. In 13th International Reliability Physics Symposium, 1975, pp. 70-79. [11] Kohman, G. T., Hermance, H. W., and Downes, G. H., Silver migration in electrical insulation. Bell System Technical Journal, 1955. 34(6): p. 1115-1147. [12] Naguib, H. M., MAcLaurin, B. K., Silver migration and the reliability of Pd/Ag conductors in thick-film dielectric crossover structures. Components, Hybrids, and Manufacturing Technology, IEEE Transactions on, 1979. 2(2): p. 196-207. [13] J.D. Lee, H.H. Tsai, and T.H. Chuang, Alloy wire and methods for manufacturing the same, US Patent 8,940,403 B2. (2015). [14] J.D. Lee, T.H. Chuang, and H.H. Tsai, Ag-based alloy wire and methods for manufacturing the same, Taiwan Patent I 394849. (2013) [15] J.D. Lee, T.H. Chuang, and H.H. Tsai, Electronic package alloy wire and methods for manufacturing the same, Taiwan Patent I 396756. (2013) [16] Steppan, J. J., Roth, J. A., Hall, L. C., Jeannotte, D. A., and Carbone, S. P., A review of corrosion failure mechanisms during accelerated tests electrolytic metal migration. Journal of the electrochemical society, 1987. 134(1): p. 175-190. [17] Krumbein, S. J., Metallic electromigration phenomena. Components, Hybrids, and Manufacturing Technology, IEEE Transactions on, 1988. 11(1): p. 5-15. [18] Tummala, R., Rymaszewski, E. J., and Klopfenstein, A. G., Microelectronics packaging handbook: technology drivers, Springer Science & Business Media, 2012. [19] 莊東漢、黃漢邦、謝國煌、蔡豐羽、陳炳宏、鄭晃忠,平面顯示器概論,高立,2008. [20] Tummala, R., Fundamentals of microsystems packaging, McGraw Hill Professional, 2001. [21] Giffels, C.A., et al., Interconnection Media. AT&T Technical Journal, 1987. 66(4): p. 31-44. [22] Grone, A.R., Current-induced marker motion in copper. Journal of Physics and Chemistry of Solids, 1961. 20(1–2): p. 88-93. [23] T.H. Chuang, Handout of Electronic Packaging, 2015. [24] Lau, J. H., Ball grid array technology, McGraw-Hill Professional, 1995. [25] Harper, C., Electronic Packaging and Interconnection Handbook 4/E 2004: McGraw-Hill Professional; 4 edition (September 28, 2004). [26] Yoo, K. A., Uhm, C., Kwon, T. J., Cho, J. S., and Moon, J. T., Reliability study of low cost alternative Ag bonding wire with various bond pad materials. In Electronics Packaging Technology Conference, 2009. EPTC'09. 11th, 2009, December, pp. 851-857, IEEE. [27] Zarkevich, N. A., and Johnson, D. D., Predicted hcp Ag-Al metastable phase diagram, equilibrium ground states, and precipitate structure. Physical Review B, 2003. 67(6): p. 064104. [28] Gam, S. A., Kim, H. J., Cho, J. S., Park, Y. J., Moon, J. T., and Paik, K. W., Effects of Cu and Pd addition on Au bonding wire/Al pad interfacial reactions and bond reliability. Journal of electronic materials, 2006. 35(11): p. 2048-2055. [29] Cho, J. S., Yoo, K. A., Hong, S. J., Moon, J. T., Lee, Y. J., Han, W., ... and Oh, K. H. , Pd effects on the reliability in the low cost Ag bonding wire. In Electronic Components and Technology Conference (ECTC), 2010 Proceedings 60th, 2010, June, pp. 1541-1546, IEEE. [30] Black, J.R., Electromigration failure models in aluminium metallization for semiconductor devices. Proc. of the IEEE, 1969. 57: p. 1587-1594. [31] Tsai, H. H., Chuang, T. H., Lee, J. D., Tsai, C. H., Wang, H. C., Lin, H. J., and Chang, C. C., High performance Ag-Pd alloy wires for high frequency IC packages. In Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), 2013 8th International (pp. 162-165). IEEE. [32] Wang, H. C., Electromigration and Annealing Grain Structure of Ag Alloy Wires for Electronic Packaging. 2013, National Taiwan University. p. 134. [33] Chang, C. C., Interfacial reactions of Ag alloy wires with wire bonded pads for IC and LED packages. 2013, National Taiwan University. p. 123. [34] Karakaya, I. and W.T. Thompson, The Ag−Pd (Silver-Palladium) system. Bulletin of Alloy Phase Diagrams, 1988. 9(3): p. 237-243. [35] Harsanyi, G., Electrochemical processes resulting in migrated short failures in microcircuits. Components, Packaging, and Manufacturing Technology, Part A, IEEE Transactions on, 1995. 18(3): p. 602-610. [36] Riemer, D. E., Material Selection and Design Guidelines for Migration-Resistant Thick Film Circuits with Silver-Bearing Conductors. In Proceedings 31st Electronic Components Conference, 1981, pp. 287-292. [37] Bard, A. J., Faulkner, L. R., Leddy, J., and Zoski, C. G. , Electrochemical methods: fundamentals and applications (Vol. 2). New York: Wiley, 1980. [38] Vu, Kim. Silver migration–The mechanism and effects on thick-film conductors. Material Science Engineering 234, spring 2003, Chem. And Mat. Sci. Dep, San Jose University (2003), pp.1-21. [39] Benson, R. C., Romenesko, B. M., Weiner, J. A., Nall, B. H., and Charles Jr, H. K., Metal electromigration induced by solder flux residue in hybrid microcircuits. Components, Hybrids, and Manufacturing Technology, IEEE Transactions on, 1988. 11(4): p. 363-370. [40] DerMarderosian, A., The electrochemical migration of metals. Proc. Int. Society of Hybrid Microelectronics, 1978. pp. 134. [41] Ripka, G., and Harsanyi, G., Electrochemical migration in thick-film ICs. Active and Passive Electronic Components, 1985. 11(4): p. 281-290. [42] Coleman, M. V., and Winster, A. E., Silver migration in thick film conductors and chip attachment resins. Microelectronics Journal, 1981. 12(4): p. 23-29. [43] Kawanobe, T., and Otsuka, K., Metal migration in electronic components. In Proceedings of Electronic Components Conference, 1982, May. pp. 99. [44] Lin, J. C., and Chuang, J. Y., Resistance to Silver Electrolytic Migration for Thick‐Film Conductors Prepared from Mixed and Alloyed Powders of Ag‐15Pd and Ag‐30Pd. Journal of the Electrochemical Society, 1997. 144(5): p. 1652-1659. [45] Lin, J. C., and Chan, J. Y., On the resistance of silver migration in Ag-Pd conductive thick films under humid environment and applied dc field. Materials Chemistry and Physics, 1996. 43(3): p. 256-265. [46] Gagne, J. P., Silver migration model for Ag-Au-Pd conductors. Components, Hybrids, and Manufacturing Technology, IEEE Transactions on, 1982. 5(4): p. 402-407. [47] ASTM F1996-01, Standard test method for silver migration for membrane switch circuitry, 1996. [48] Sbar, N. L., Bias-Humidity Performance of Encapsulated and Unencapsulated Ti-Pd-Au Thin-Film Conductors in an Environment Contaminated with Cl2. Parts, Hybrids, and Packaging, IEEE Transactions on, 1976. 12(3): p. 176-181. [49] Yang, S., Wu, J., and Christou, A., Initial stage of silver electrochemical migration degradation. Microelectronics Reliability, 2006. 46(9): p. 1915-1921. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/78210 | - |
dc.description.abstract | 因應金銲線與銅銲線在做為封裝打線接合材料所遭遇到的許多問題,近年來電子產業也開始嘗試使用純銀銲線做為替代材,雖然銀金屬具有最佳的導電率及導熱性質,但是由於銀離子遷移現象所導致電子元件短路失效之問題是純銀銲線一直不被廣為使用的原因之一。由於過去文獻中已證實鈀的添加可以有效抑制銀離子遷移的現象,所以本研究採用合金銲線的概念,利用添加鈀元素對純銀銲線進行改質。隨著半導體製程技術的進步,線寬持續減少,使得導體之間的電場強度增加,進而加速了離子遷移現象的發生,因此離子遷移的影響更是不容忽視。
由於離子遷移必須在水氣相當充足的環境下才會發生,所以本實驗採用符合美國材料與試驗協會之F1996標準規範,以水滴法來觀測銀離子遷移的現象。其中為了避免鈀元素因鹵素汙染物而誘發其離子遷移,在實驗溶液上是選擇電阻率為18 MΩ•cm的超純水,如此便可單純地只探討銀離子遷移的發生。利用本實驗所定義之平均離子遷移率公式,可量化鈀含量對銀合金銲線銀離子遷移之影響,將各銀合金線材計算出之結果作比較,可發現平均銀離子遷移率幾乎隨著鈀含量的增加而呈線性下降,而且樹枝狀析出物尺寸也隨之增大。其中純銀銲線擁有最高的平均銀離子遷移率 (10.23 μm/s),當鈀添加量從2 wt.%增加至6 wt.%時,平均銀離子遷移率下降10 %至25 %。 雖然銀離子遷移的現象早在1930年代即被發現並提出,但先前研究所探討的皆是最早有此現象發生的銀厚膜塊材,且都是在添加10 wt.%以上之高含量鈀的抑制效果。透過本研究可證實在銀鈀合金銲線中添加少量鈀元素 (低於6 wt.%) 時,亦可以有效地減緩銀離子遷移的影響,並且有系統地建立起觀測線材電解離子遷移現象的方式。 | zh_TW |
dc.description.abstract | In response to the problems of Au and Cu bonding wires, the electronic industry have begun to try to use pure Ag wire as an alternative material in recent years. Although Ag has the highest electric and thermal conductivities of all the metallic elements, one of the reasons why it has not been widely used is that Ag-ion migration was found to cause electronic devices to short circuit and fail. Many researches have confirmed that alloying Ag with Pd could inhibit the failure mode of Ag-ion migration, so this study used the concept of Ag-alloy wires which were modified by doped with Pd. With the advancement of semiconductor process technology, the wire pitch have been proceeding to decrease so that the electric field strength between conductors will increase. Thus the impact of Ag-ion migration couldn’t be ignored anymore.
Ion migration only occur in an environment of abundant humidity, so this study investigated Ag-ion migration by using the water drop test according to ASTM standard F1996. Selecting the distilled water with electrical resistance of 18 MΩ•cm was to avoid inducing Pd-ion migration by halogen contaminants, so it could just simply discuss about Ag-ion migration. By using the formula of average ion migration rate defined in this study, we can quantify the effect of Pd content on ion migration of Ag-alloy bonding wires, the result shows that the average ion migration rate decrease linearly and the dendrite precipitate size enlarge with Pd content increased. Moreover, it can be seen pure Ag wire had the highest Ag-ion migration rate, 10.23 μm/s. The Ag-ion migration rate of Ag-alloy wires decreased about 10 to 25 % by addition of 2 to 6 wt.% Pd. Although the phenomenon of Ag-ion migration was discovered in the 1930s, all of the previous papers were focused on Ag thick film materials and the high Pd content which were more than 10 wt.%. Through this study, it could prove the effective inhibition of Ag-ion migration in Ag-alloy bonding wires when the Pd content is less than 6 wt.%, and establishing a systematic method to observe the phenomenon of ion migration for bonding wires. | en |
dc.description.provenance | Made available in DSpace on 2021-07-11T14:46:05Z (GMT). No. of bitstreams: 1 ntu-105-R03527042-1.pdf: 6622524 bytes, checksum: 14fd2992f676b2468ea8680e1dd99c96 (MD5) Previous issue date: 2016 | en |
dc.description.tableofcontents | 致謝…………………………………………………………………………………………………………………… Ⅰ
摘要…………………………………………………………………………………………………………………… Ⅱ Abstract………………………………………………………………………………………………………………… Ⅲ 圖目錄………………………………………………………………………………………………………………. Ⅶ 表目錄………………………………………………………………………………………………………………. Ⅹ 第一章 前言………………………………………………………………………………………………………. 1 1.1 研究背景……………………………………………………………………………………………… 1 1.2 研究動機……………………………………………………………………………………………… 4 第二章 文獻回顧………………………………………………………………………………………………. 5 2.1 電子封裝技術與發展………………………………………………………………………….. 5 2.2 銀銲線與銀合金銲線…………………………………………………………………………. 11 2.3 金屬遷移…………………………………………………………………………………………….. 17 2.4 離子遷移現象…………………………………………………………………………………….. 18 2.4.1離子遷移所需之必要條件………………………………………………………… 19 2.4.2 離子遷移與擴散的差異…………………………………………………………… 19 2.5 銀的離子遷移…………………………………………………………………………………….. 21 2.5.1銀離子遷移之機制……………………………………………………………………… 22 2.5.2銀離子遷移之測試方法……………………………………………………………… 23 2.5.3銀離子遷移之影響參數……………………………………………………………… 23 第三章 實驗方法………………………………………………………………………………………………. 31 3.1 實驗流程……………………………………………………………………………………………… 31 3.2 線材的製備………………………………………………………………………………………….. 32 3.3 離子遷移實驗………………………………………………………………………………………. 32 3.3.1 離子遷移實驗裝置……………………………………………………………………… 32 3.3.2 離子遷移之環境控制………………………………………………………………… 32 3.4 樣品性質與分析方法……………………………………………………………………………. 34 3.4.1 遷移電流之量測………………………………………………………………………… 34 3.4.2 光學顯微鏡及掃描式電子顯微鏡觀察……………………………… 34 3.4.3 平均離子遷移率之計算…………………………………………………………… 34 第四章 結果與討論……………………………………………………………………………………………… 37 4.1 樹枝狀析出物之成分分析…………………………………………………………………… 37 4.2 平均離子遷移率之比較………………………………………………………………………… 40 4.3 樹枝狀析出物之顯微組織觀察…………………………………………………………… 58 4.4不同通電時間下之兩極間與兩極表面觀察……………………………………… 61 第五章 結論…………………………………………………………………………………………………………. 68 參考文獻……………………………………………………………………………………………………………….. 69 | |
dc.language.iso | zh-TW | |
dc.title | 鈀含量對銀合金銲線離子遷移之影響 | zh_TW |
dc.title | Effect of Pd Content on Ion Migration of Ag-alloy Bonding Wires | en |
dc.type | Thesis | |
dc.date.schoolyear | 104-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 吳春森,蔡幸樺,李俊德,王尚智 | |
dc.subject.keyword | 離子遷移,打線封裝,銀鈀合金銲線,水滴法試驗,樹枝狀析出物, | zh_TW |
dc.subject.keyword | ion migration,wire bonding,Ag-alloy bonding wires,water drop test,dendrite, | en |
dc.relation.page | 75 | |
dc.identifier.doi | 10.6342/NTU201600981 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2016-07-18 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
顯示於系所單位: | 材料科學與工程學系 |
文件中的檔案:
檔案 | 大小 | 格式 | |
---|---|---|---|
ntu-105-R03527042-1.pdf 目前未授權公開取用 | 6.47 MB | Adobe PDF |
系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。