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  1. NTU Theses and Dissertations Repository
  2. 電機資訊學院
  3. 光電工程學研究所
請用此 Handle URI 來引用此文件: http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/78208
完整後設資料紀錄
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dc.contributor.advisor吳肇欣(Chao-Hsin Wu)
dc.contributor.authorSzu-Yu Minen
dc.contributor.author閔絲愉zh_TW
dc.date.accessioned2021-07-11T14:46:01Z-
dc.date.available2025-08-01
dc.date.copyright2020-08-28
dc.date.issued2020
dc.date.submitted2020-08-17
dc.identifier.citation[1] 盧廷昌、尤信介. VCSEL技術原理與應用. 五南, 2019
[2] https://www.21semiconductors.com/innovation/laser-concepts/
[3] 蔡元興、孫齊磊. 電鍍電化學原理. 化學工業出版社, 2014
[4] H.J. De Los Santos, “RF MEMS Circuit Design for Wireless Communications”, Artech House, London, (2002).
[5] S. Michaelis, H.J. Timme, M. Wycisk, J. Binder, “Additive electroplating technology as a post-CMOS process for the production of MEMS acceleration-threshold switches for transportation applications”, J. Micromech. Microeng., Vol. 10, pp. 120-123, (2000).
[6] W. Ruythooren, K. Attenborough, S. Beerten, P. Merken, J. Fransaer, E. eyne, C. Van Hoof, J.D. Boeck, J.P. Celis, “lectrodeposition for the synthesis of Microsystems”, J. Micromech. Microeng., Vol. 10, pp. 101-107, (2000).
[7] https://e-beam.ferrotec.com/
[8] https://www.icmm.csic.es/fis/english/evaporacion_electrones.html
[9] https://reurl.cc/j7z8LD, (wiki plasma)
[10] http://lnf-wiki.eecs.umich.edu/wiki/Sputter_deposition
[11] https://www.eettaiwan.com/20190213ta31-fsm-of-mosfet/
[12] https://scitechvista.nat.gov.tw/c/s252.htm
[13] SCHLESINGER, Mordechay; PAUNOVIC, Milan (ed.). Modern electroplating. John Wiley Sons, 2011.
[14] LIU, Kuo Kang, et al. Electroplated microneedle array for biomedical applications. In: Smart Electronics and MEMS II. International Society for Optics and Photonics, 2001. p. 44-48.
[15] ROMANKIW, L. T. A path: from electroplating through lithographic masks in electronics to LIGA in MEMS. Electrochimica acta, 1997, 42.20-22: 2985-3005.
[16] MALLORY, Glenn O.; HAJDU, Juan B. (ed.). Electroless plating: fundamentals and applications. Cambridge University Press, 1990.
[17] 李贤成. 无氰亚硫酸钠镀金工艺. 2005. PhD Thesis.
[18] OKINAKA, Yutaka; HOSHINO, Masao. Some recent topics in gold plating for electronics applications. Gold Bulletin, 1998, 31.1: 3-13.
[19] DINAN, T. E.; CHEH, H. Y. The effect of arsenic upon the hardness of electrodeposited gold. Journal of the Electrochemical Society, 1992, 139.2: 410.
[20] https://www.palmtech.com.tw/tw/technical/cog--chip-on-glass-----fog--film-on-glass-
[21] HONMA, H.; HAGIWARA, K. Fabrication of gold bumps using gold sulfite plating. Journal of the Electrochemical Society, 1995, 142.1: 81.
[22] Honma, H., Kagaya, Y. (1993). Gold plating using the disulfiteaurate complex. Journal of the Electrochemical Society, 140(9), L135.
[23] http://www.tltech.com.tw/service.asp , 鈦麗科技
[24] http://www.zyworld.com.tw/index.php?action=prod_detail p_id=34
[25] SCOTT, Jeff W., et al. Modeling temperature effects and spatial hole burning to optimize vertical-cavity surface-emitting laser performance. IEEE journal of quantum electronics, 1993, 29.5: 1295-1308.
[26] HEGBLOM, E. R., et al. Estimation of scattering losses in dielectrically apertured vertical cavity lasers. Applied physics letters, 1996, 68.13: 1757-1759.
[27] MOSER, Philip; LOTT, James A.; BIMBERG, Dieter. Energy efficiency of directly modulated oxide-confined high bit rate 850-nm VCSELs for optical interconnects. IEEE Journal of Selected Topics in Quantum Electronics, 2013, 19.4: 1702212-1702212.
[28] JUNGO, Marc, et al. Scaling effects on vertical-cavity surface-emitting lasers static and dynamic behavior. Journal of Applied Physics, 2002, 91.9: 5550-5557.
[29] CHOQUETTE, Kent D., et al. Scalability of small-aperture selectively oxidized vertical cavity lasers. Applied Physics Letters, 1997, 70.7: 823-825.
[30] WU, C. H., et al. The effect of microcavity laser recombination lifetime on microwave bandwidth and eye-diagram signal integrity. Journal of Applied Physics, 2011, 109.5: 053112.
[31] TATHAM, M. C., et al. Resonance frequency, damping, and differential gain in 1.5 mu m multiple quantum-well lasers. IEEE journal of quantum electronics, 1992, 28.2: 408-414.
[32] UNOLD, Heiko J., et al. Large-area single-mode VCSELs and the self-aligned surface relief. IEEE Journal of Selected Topics in Quantum Electronics, 2001, 7.2: 386-392.
dc.identifier.urihttp://tdr.lib.ntu.edu.tw/jspui/handle/123456789/78208-
dc.description.abstract本論文以氧化孔徑以及金屬孔徑侷限垂直共振腔面射型雷射的特性為主題,將單模傳輸作為目標,針對其直流、頻譜、光場做分析。
第一章介紹目前資料中心對短距離的 850 nm 垂直共振腔面射型雷射與單模傳輸的特性以及使用VCSEL優點和開發單模的研究動機,並且簡短的介紹了電鍍的趨勢,希望電鍍能應用在高功率陣列型雷射上。第二章介紹了不同鍍金的方式,最後我們採用了亞硫酸金作為電鍍溶液其與氫化物相比屬於環保材料,並且比電子束及濺鍍金來得節省時間和金的成本,並比較不同時間對厚度的影響最後成功應用在分布式反饋雷射上,並提出希望能應用在高功率陣列VCSEL上。
第三章討論了 VCSEL 的DBR上方加入不同金屬環的設計,提出利用金屬限制出光孔徑,在不同內徑大小分別7、5、4、3 μm金屬環下觀察對出光的影響,並以水氧化孔徑的製程結構做出光孔徑大小分別為5、7、9 μm 的VCSEL 元件;從實驗結過得知金屬會使光強降低,也會使模態減少,這現象表明了金屬環光的抑制是有效的。但若光恐徑太大還是無法達成單模,但我們可達到17dB的旁模抑制比且光學調製響應達到19GHz以上。
我們希望可以達成單模態的產生所以在第四章節將近一步的利用表面蝕刻,增加表面損耗抑制高模態的產生,並且縮小1μm的水氧孔徑,使水氧化孔徑的製程結構做出光孔徑大小分別為4、6、8 μm 的VCSEL 元件再延續第三章節的方式與金屬環做結合,在不同內徑大小分別7、5、4、3 μm金屬環下觀察對出光的影響,最後在4 μm 的水氧孔徑和3 μm金屬環在3 mA下輸出功率約0.8 mW亦可達到20dB的抑制比,發散角為14o,調製響應約16 GHz之元件,這些元件還具有改善的空間,並且未來我們能利用這些元件做長距離傳輸。
zh_TW
dc.description.abstractThis thesis focuses on the characteristics of the vertical cavity surface-emitting laser with oxidized aperture and metal aperture as the subject, with single-mode transmission as the target, and its direct current, spectrum, and optical field are analyzed.
The first chapter introduces the characteristics of the data center's short-distance 850 nm vertical cavity surface-emitting laser and single-mode transmission. The advantages of using VCSELs and the research motivation for developing single-mode. Next chapter briefly introduces the trend of electroplating, hope electroplating can be applied to high-power array lasers. We use gold sulfite as the electroplating solution. To compare with hydrides, it is an environmentally friendly material, and saves time and gold cost than electron beam and sputtering gold. Finally successfully applied to distributed feedback lasers, and it was proposed that it could be applied to high-power array VCSELs.
Chapter 3 discusses the design of adding different metal rings above the DBR of the VCSEL. It is proposed to use metals to limit the light-emitting aperture, and observe the effect on the light-emitting under different inner diameters of 7, 5, 4, and 3 μm. The process structure of the aperture makes VCSEL device with the aperture size of 5, 7, and 9 μm respectively. From the experiment, it is known that metal will reduce the light intensity and also reduce the mode. This phenomenon shows the suppression of mode by metal ring is valid. However, if the optical aperture is too large, single mode cannot be achieved, but we can achieve a side-mode suppression ratio of 17dB and an optical modulation response of more than 19GHz.
We hope to achieve single-mode, so in the fourth chapter, we will use surface etching to increase the surface loss to suppress the generation of high-order mode, and reduce the 1μm optical aperture. The VCSEL device with aperture sizes of 4, 6, and 8 μm are combined with the metal ring in the third chapter, and the influence on the light is observed under the metal ring with different inner diameters of 7, 5, 4, and 3 μm. Finally, with a 4 μm optical aperture and a 3 μm metal ring with an output power of about 0.8 mW at 3 mA, a suppression ratio of 20 dB, a divergence angle of 14o, and a modulation response of about 16 GHz can be achieved. These components have room for improvement. And we can use these components for long-distance transmission in the future.
en
dc.description.provenanceMade available in DSpace on 2021-07-11T14:46:01Z (GMT). No. of bitstreams: 1
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Previous issue date: 2020
en
dc.description.tableofcontents口試委員審定書 #
致謝 i
中文摘要 iii
ABSTRACT iv
圖目錄 viii
表目錄 xii
第1章 簡介 1
1.1. 動機 4
1.2. 電鍍製程趨勢 4
第2章 電鍍技術 5
2.1. 鍍金簡介 5
2.2. 電鍍金介紹 10
2.2.1. 電鍍金機制 10
2.2.2. 亞硫酸電鍍金 12
2.3. 電鍍實驗設備及架設 13
2.4. 電鍍金實驗結果 15
2.5. 金電鍍應用於DFB雷射量測結果 19
第3章 高速垂直共振腔面射型雷射 (VCSEL) 金屬環抑制模態製程、直流特性分析、高頻特性量測 22
3.1. 波長850nm垂直共振腔面射型雷射結構 22
3.1.1. VCSEL基本原理介紹 22
3.1.2. VCSEL磊晶結構設計 23
3.2. 金屬環VCSEL 製成步驟 24
3.3. 不同金屬環與不同孔徑大小之VCSEL元件特性 28
3.3.1. 直流與小訊號量測架設 28
3.3.2. 直流特性分析 30
3.3.3. 電流密度(L-J-V Curve)分析 37
3.3.4. 頻譜分析 39
3.3.5. 小訊號量測 45
3.4. 結論 46
第4章 高速垂直共振腔面射型雷射 (VCSEL) 表面蝕刻及金屬環抑制形成單模雷射製程、直流特性分析、高頻特性量測 47
4.1. 表面蝕刻及金屬環結構 47
4.2. 表面蝕刻及金屬抑制VCSEL 製成步驟 49
4.3. 不同金屬環與不同孔徑大小之VCSEL元件特性 55
4.3.1. 直流特性分析 55
4.3.2. 電流密度(L-J-V Curve)分析 62
4.3.3. 頻譜分析 64
4.3.4. 光場架設 70
4.3.4.1. 光場分析 71
4.3.5. 小訊號量測 76
4.4. 總結 77
第5章 結論 78
REFERENCE 79
附錄 82
dc.language.isozh-TW
dc.subject半導體雷射zh_TW
dc.subject垂直共振腔面射型雷射zh_TW
dc.subject單模zh_TW
dc.subject高頻特性zh_TW
dc.subject光通訊zh_TW
dc.subjecthigh frequency characteristicsen
dc.subjectoptical communicationen
dc.subjectsemiconductor laseren
dc.subjectvertical cavity surface-emitting laseren
dc.subjectsingle modeen
dc.title使用金屬環對模態控制的影響於850nm垂直共振腔面射型雷射zh_TW
dc.titleThe effect of mode control of 850 nm VCSEL using metal ring contacten
dc.typeThesis
dc.date.schoolyear108-2
dc.description.degree碩士
dc.contributor.oralexamcommittee吳育任(Yuh-Renn Wu),黃建璋(Jian-Jang Huang),林恭如(Gong-Ru Lin)
dc.subject.keyword光通訊,半導體雷射,垂直共振腔面射型雷射,單模,高頻特性,zh_TW
dc.subject.keywordoptical communication,semiconductor laser,vertical cavity surface-emitting laser,single mode,high frequency characteristics,en
dc.relation.page85
dc.identifier.doi10.6342/NTU202003315
dc.rights.note有償授權
dc.date.accepted2020-08-18
dc.contributor.author-college電機資訊學院zh_TW
dc.contributor.author-dept光電工程學研究所zh_TW
dc.date.embargo-lift2025-08-01-
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