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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 李坤彥 | |
dc.contributor.author | Sheng-Chung Wang | en |
dc.contributor.author | 王聖中 | zh_TW |
dc.date.accessioned | 2021-07-11T14:44:41Z | - |
dc.date.available | 2021-10-14 | |
dc.date.copyright | 2016-10-14 | |
dc.date.issued | 2016 | |
dc.date.submitted | 2016-08-02 | |
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/78173 | - |
dc.description.abstract | 近年來由於能源需求的提升而使得對於提升能源轉換效率成為相當重要的研究議題,此論文設計一同時具有高崩潰電壓和低特徵導通電阻的新穎垂直型金氧半場效電晶體及其邊緣終端區。
此新穎結構將傳統的超級接面分成許多上下不相連接的分段式P型區域,且為了使空乏區快速充滿結構,各片段的摻雜濃度能夠隨著深度而不同。在相同深度處的主動區分段式P型區域的摻雜濃度與邊緣終端區的摻雜濃度相同,因此在製程上主動區與邊緣終端區能夠同時完成。此新穎結構能夠與超級接面金氧半場效電晶體有著相同等級的崩潰電壓,而在擴散及磊晶製程上有著更佳的彈性。 本論文藉由模擬軟體Silvaco TCAD設計分段式P型片段結構金氧半場效電晶體,針對元件結構進行製程以及電性模擬,就元件內部各區塊的摻雜濃度、寬度及退火時間等作分析,最後達到元件崩潰電壓630伏特與導通電阻28.2mΩ .cm2以及崩潰電壓662伏特與導通電阻33.2mΩ.cm^2的電性表現。 | zh_TW |
dc.description.abstract | As demand for energy has increased in recent years, techniques for achieving energy efficiency have become significant targets on the investigation. We try to design a novel structure for a vertical power MOSFET and edge termination to increase the breakdown voltage and remain the low specific on-state resistance.
The novelty is the conventional P pillars in the super junction MOSFET active region and edge termination are divided into several segments which are not connected with each others. The doping concentrations of P segments at the different depth can be different to create the maximum depletion area. The doping concentration of P segments in the MOSFET active region and edge termination at the same depth are the same so that the fabrication processing for MOSFET and edge termination can be simultaneously completed. The novel structure can achieve the same breakdown voltage as the conventional super junction MOSFET. In addition, the design is more flexible in diffusion and epilayer growth processes. This structure is simulated with Silvaco TCAD. The fabrication process simulation is carried out by Athena and electric performance is carried out by Atlas. The influence of the doping concentration and the width of the P segments and the annealing time on the MOSFET performance are also investigated. The specific on-resistance of the novel MOSFET achieved are 28.2mΩ.cm^2 at VB=630V and 33.2mΩ.cm^2 at VB=662V. | en |
dc.description.provenance | Made available in DSpace on 2021-07-11T14:44:41Z (GMT). No. of bitstreams: 1 ntu-105-R03525083-1.pdf: 4370680 bytes, checksum: 09034e3743be9a8711c9bfd0bcd7876b (MD5) Previous issue date: 2016 | en |
dc.description.tableofcontents | 口試委員審定書 1
誌謝 2 中文摘要 3 ABSTRACT 4 目錄 5 圖目錄 8 表目錄 12 附錄A. 13 第一章 序論 1 1.1前言 1 1.2 材料特性及常見製程 2 1.2.1 矽的材料特性 2 1.2.2 矽的常見製程 5 1.3 研究動機 7 1.4 論文大綱 8 第二章 功率金氧半場效電晶體發展回顧及操作原理 10 2.1 功率金氧半場效電晶體發展回顧 10 2.2 垂直雙擴散金氧半場效電晶體的結構與操作原理 14 2.2.1 垂直雙擴散金氧半場效電晶體的結構與製程 14 2.2.2 垂直雙擴散金氧半場效電晶體的順向導通機制 15 2.2.3 垂直雙擴散金氧半場效電晶體的逆向耐壓機制與崩潰機制 19 2.2.4 崩潰電壓與導通電阻 22 2.3 超級接面的發展 23 2.3.1 超級接面的基本結構與原理 24 2.3.2 超級接面的製程方法 28 2.3.3 超級接面應用於功率金氧半場效電晶體 30 2.4 邊緣終端區的保護結構 32 2.4.1 簡介與原理 32 2.4.2邊緣終端區保護結構的類型 33 2.5 新穎分段式P型區域功率金氧半場效電晶體 35 2.5.1 分段式P型區域功率金氧半場效電晶體結構 35 2.5.2 分段式P型區域功率金氧半場效電晶體製程方法 36 2.5.3 分段式P型區域邊緣終端區保護結構 37 第三章 模擬軟體環境設定 39 3.1 模擬環境 39 3.2 模擬方法 40 3.3 模擬參數 44 第四章 模擬結果的分析與討論 49 4.1 晶胞主動區的模擬 49 4.1.1初始設定 (版本一) 49 4.1.2 P-Base區濃度提高、分段式P型開口減少與移動、佈值劑量提高 (版本二) 53 4.1.3降低分段式P型佈植劑量(版本三) 56 4.1.4 分段式P型區域佈植劑量降低與遮罩開口變更(版本四) 58 4.1.5 分段式P型與P-Base佈植劑量降低(版本五) 61 4.1.6 分段式P型遮罩向外移動(版本六) 66 4.1.7 分段式P型區域摻雜濃度由上而下遞減(版本七) 71 4.1.8 底層分段式P型區域佈植劑量提高(版本八) 73 4.1.9 磊晶濃度、分段式P型、P-Base區摻雜濃度降低為80%(版本九) 76 4.1.10調整分段式P型遮罩開口(版本十) 78 4.1.11 延長退火時間(版本十一) 81 4.2 整理與討論 85 4.3邊緣終端區保護結構的模擬 88 4.3.1 初始設定 (版本一) 88 4.3.2 佈植窗口調整(版本二) 91 第五章 結論與未來展望 94 參考文獻 95 | |
dc.language.iso | zh-TW | |
dc.title | 新穎600伏特高功率金氧半場效電晶體結構開發 | zh_TW |
dc.title | Design and Simulation of Novel 600V High Power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Structure | en |
dc.type | Thesis | |
dc.date.schoolyear | 104-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 胡振國,薛文証,黃智方 | |
dc.subject.keyword | 高功率晶氧半場效電晶體,超級接面,高功率元件,垂直雙擴散金氧半場效電晶體,邊緣終端保護結構, | zh_TW |
dc.subject.keyword | Power device,Super junction,Power MOSFET,VDMOSFET,Edge Termination, | en |
dc.relation.page | 97 | |
dc.identifier.doi | 10.6342/NTU201601771 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2016-08-02 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 工程科學及海洋工程學研究所 | zh_TW |
顯示於系所單位: | 工程科學及海洋工程學系 |
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