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Design and Simulation of Novel 600V High Power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Structure
Power device,Super junction,Power MOSFET,VDMOSFET,Edge Termination,
|Publication Year :||2016|
As demand for energy has increased in recent years, techniques for achieving energy efficiency have become significant targets on the investigation. We try to design a novel structure for a vertical power MOSFET and edge termination to increase the breakdown voltage and remain the low specific on-state resistance.
The novelty is the conventional P pillars in the super junction MOSFET active region and edge termination are divided into several segments which are not connected with each others. The doping concentrations of P segments at the different depth can be different to create the maximum depletion area. The doping concentration of P segments in the MOSFET active region and edge termination at the same depth are the same so that the fabrication processing for MOSFET and edge termination can be simultaneously completed. The novel structure can achieve the same breakdown voltage as the conventional super junction MOSFET. In addition, the design is more flexible in diffusion and epilayer growth processes.
This structure is simulated with Silvaco TCAD. The fabrication process simulation is carried out by Athena and electric performance is carried out by Atlas. The influence of the doping concentration and the width of the P segments and the annealing time on the MOSFET performance are also investigated. The specific on-resistance of the novel MOSFET achieved are 28.2mΩ．cm^2 at VB=630V and 33.2mΩ．cm^2 at VB=662V.
|Appears in Collections:||工程科學及海洋工程學系|
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