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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 呂良鴻(Liang-Hung Lu) | |
dc.contributor.author | Hao-Jan Pan | en |
dc.contributor.author | 班浩然 | zh_TW |
dc.date.accessioned | 2021-07-11T14:43:42Z | - |
dc.date.available | 2021-11-09 | |
dc.date.copyright | 2016-11-09 | |
dc.date.issued | 2016 | |
dc.date.submitted | 2016-08-10 | |
dc.identifier.citation | [1] B. Razavi, RF Microelectronic. 2nd ed. Upper Saddle River, NJ: Pearson, 2012.
[2] Hyun Jin Yoo, Kang Hyuk Lee 'A Fully Integrated 2.4/3.4 GHz Dual-Band CMOS Power Amplifier with Variable Inductor' Proceedings of the 39th European Microwave Conference . [3] Chang-Ho Lee and Jihwan Kim, 'A Dual-Mode CMOS RF Power Amplifier With Integrated Tunable Matching Network' IEEE Trans. Microw. Theory Tech., vol. 56, no. 12, pp. 3239–3244,Dec. 2012 [4] J. Roderick , “A 0.13um CMOS Power Amplifier with Ultra-Wide Instantaneous Bandwidth for Imaging Applications' in IEEE ISSCC Dig. Tech.Papers, Feb. 2009,pp. 12-14 [5] M. Reza , “Concurrent Dual Band 2.4/3.5GHz Fully Integrated Power Amplifier in 0.13μm CMOS Technology' Proceeding of the 39th European Microwave Conference 2009. [6] Lawrence E. Larson, 'Fully Integrated Dual-Band Power Amplifiers with on-chip Baluns in 65nm CMOS for an 802.11n MIMO WLAN SoC ' in Proc.of 2009 IEEE Radio Frequency Integrated Circuits Symposium. [7] Ali Afsahi , “A Fully Integrated 2.4/3.4 GHz Dual-Band CMOS Power Amplifier with Variable Inductor,” in Proc.of 2009 IEEE Radio Frequency Integrated Circuits Symposium. [8] S. Abdollahi-Alibeik et al., 'Compact Concurrent Dual-Band Power Amplifier for 1.9GHz WCDMA and 3.5GHz OFDM Wireless Systems ' Proceedings of the 3rd European Microwave Integrated Circuits Conference. [9] Hyun Jin Yoo, Kang Hyuk Lee, 'A Fully Integrated 2.4/3.4 GHz Dual-Band CMOS Power Amplifier with Variable Inductor' Proceedings of the 39th European Microwave Conference . [10] A. Hajimiri, ”A 5.2-to-13 GHz class-AB CMOS power amplifier with a 25.2 dBm peak output power at 21.6% PAE, ' in IEEE ISSCC Dig. Tech. Papers, Feb. 2010, pp. 12–14. [11] J. Roderick , “A 0.13um CMOS Power Amplifier with Ultra-Wide Instantaneous Bandwidth for Imaging Applications' in IEEE ISSCC Dig. Tech.Papers, Feb. 2009,pp. 12-14 [12] S. Jose, “A low-power CMOS power amplifier for ultra wideband (UWB) applications ', IEEE International Symposium on Circuits and Systems, vol. 5, pp. 5111-5114, May 2005 . [13] C.Lu ,” A CMOS power amplifier for full-band UWBtransmitters ', IEEE RFIC Symp. Dig., pp. 397-400, June 2006. [14] L. Jong-Wook, L. F. Eastman, and K. J. Webb, “A gallium–nitride push–pull microwave power amplifier,” IEEE Trans. Microw. Theory Tech., vol. 51, no. 11, pp. 2243–2249, Nov. 2003. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/78145 | - |
dc.description.abstract | 本論文提出應用在無線網路通訊操作於多頻帶的射頻放大器技巧.第一個晶片為操作在2.4 -GHz / 5-GHz 的雙波峰射頻全積體化前端電路,包含3個雙頻帶變壓器、功率放大器及驅動功率放大器,藉由利用一份硬體與設計雙頻帶變壓器來達成多頻帶效果,在晶片上可減少晶片面積的浪費。利用180-nm CMOS製程,所提出的射頻發射前端在沒有額外元件下,分別在2.4 GHz 與5-GHz 情況下,所能傳遞的功率為+20 dBm / +19.2 dBm的飽和功率輸出。
第二個晶片為操作在2.4 – 6 GHz 的寬頻帶射頻全積體化前端電路。藉由我們提出的基於變壓器高階匹配電路,把傳統的帶通濾波器在大幅節省面積下,達到寬頻功能,在2.7-GHz時小訊號峰值輸出為16 dB 以及所能傳遞的功率為 +19.2 dBm的飽和功率輸出。 | zh_TW |
dc.description.abstract | This thesis presents two fully-integrated multiband power amplifiers for wireless communications application. The first chip is operating at 2.4 -GHz / 5-GHz concurrent dualband RF integrated front-end circuit comprising three trifilar transformers, one power amplifier and one driver. By design well of the transformer we can achieve a multi-band function on the chip and also reduce the waste of chip area. By using a standard 180-nm CMOS process, the proposed RF transmitter front-end requires no off-chip components while demonstrates 15-dB power gain with 19.8-dBm Psat measured at 2.4 GHz, and 10.5-dB power gain with 19-dBm saturated output power (Psat) measured at 5 GHz.
The second chip is operating at 2.4 - 6 GHz of fully integrated wideband RF front-end circuit. With our proposed transformer-based high order matching network circuit, we can save area which compare to the traditional band-pass filter matching network. By also using a standard 180-nm CMOS process, the proposed RF transmitter front-end demonstrates 16-dB peak power gain with 19.8-dBm Psat measured at 2.7 GHz, and measurd bandwidth is from 2.3 to 4.5 GHz which fractional bandwidth is 63%. | en |
dc.description.provenance | Made available in DSpace on 2021-07-11T14:43:42Z (GMT). No. of bitstreams: 1 ntu-105-R02943028-1.pdf: 4325195 bytes, checksum: 94c2885969e63ceffbbee39f37ebde7b (MD5) Previous issue date: 2016 | en |
dc.description.tableofcontents | Content
口試委員會審定書 i 致謝 v 摘要 vii Abstract ix Content xi List of figures xiii List of tables xvii Chapter 1 Introduction 1 1.1 Motivation 1 1.2 Thesis organization 2 Chapter 2 Background 4 2.1 On-chip Transformer for Matching Networks 4 2.2 The power amplifier 6 2.2.1 General considerations of power amplifier 6 2.2.2 Linearity and Gain compression 8 2.2.3 Classification of power amplifiers 9 2.2.4 The optimal impedance for the power amplifier design 13 2.2.5 The cascode topology of power amplifier with I/O device 15 Chapter 3 A 2.4/5.2-GHz CMOS Concurrent Dualband Power Amplifier for Wireless LAN Applications 17 3.1 Introduction 18 3.2 The proposed system architecture 22 3.3 Circuit implementation 25 3.3.1 Design of Trifilar transformer 25 3.3.2 Design of dualband driver and power amplifier 32 3.4 Experimental Results 36 3.5 Conclusion 42 Chapter 4 A 2.4 – 6 GHz Transformer-based CMOS Broadband Power Amplifier for Wireless LAN Applications 43 4.1 Introduction 44 4.2 The proposed system architecture 46 4.3 Circuit implementation 51 4.3.1 Transformer-based high order matching network 51 4.3.2 The implementation of PA and DA circuit 53 4.4 Experimental Results 57 4.5 Conclusion 61 Chapter 5 Conclusion 62 Bibliography 64 | |
dc.language.iso | en | |
dc.title | 應用於無線網路的多頻帶金氧半導體變壓器前端射頻功率放大器分析與設計 | zh_TW |
dc.title | Analysis and Design of CMOS Transformer-Based Multiband RF Power Amplifiers for Wireless LAN Applications | en |
dc.type | Thesis | |
dc.date.schoolyear | 104-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 邱煥凱(Hwann-Kaeo Chiou),郭建男(Chien-Nan Kuo) | |
dc.subject.keyword | 多頻功率放大器, | zh_TW |
dc.subject.keyword | Multiband power amplifier, | en |
dc.relation.page | 65 | |
dc.identifier.doi | 10.6342/NTU201602142 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2016-08-11 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
顯示於系所單位: | 電子工程學研究所 |
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