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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 陳永芳 | |
dc.contributor.author | Yen-Hsiang Wang | en |
dc.contributor.author | 王彥翔 | zh_TW |
dc.date.accessioned | 2021-07-11T14:43:38Z | - |
dc.date.available | 2019-10-14 | |
dc.date.copyright | 2016-10-14 | |
dc.date.issued | 2016 | |
dc.date.submitted | 2016-08-10 | |
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/78143 | - |
dc.description.abstract | 二維材料的應用開創了可變形電子元件的新篇章,在未來穿戴式電子科技對於這種可變形電子元件的需求勢必無所不在。然而二維材料先天的拉伸性的缺陷限制了其實際的應用與表現。因此本篇論文研究主要結合化學氣相沉積法製成之石墨烯與半導體量子點,並製作於嵌入銀奈米線的聚二甲基矽氧烷基板上以形成波浪狀可拉伸式光感測元件。我們成功地利用這樣獨特的波浪結構去克服石墨烯先天上拉伸性上的限制。並且結合了石墨烯的絕佳導電性與半導體量子點的高度光吸收,因此我們驗證了一個拉伸率高達百分之三十並且可重複拉伸的高感光之光電晶體。而其高感光效能更可比於硬性基板的元件。此種波浪結構的設計可以應用在許多不同的材料上,對於軟性電子元件的發展與設計勢必有非常大的貢獻。 | zh_TW |
dc.description.abstract | Two dimensional (2D) materials have created a new possibility for flexible electronics, which will be omnipresent in future wearable technologies. However, the poor native stretchability of 2D materials limits its performance and practical applications. In order to circumvent this drawback, in this study, we proposed an hybrid nanocompsite made with 2D material, semiconductor nanoparticles and metallic nanowires, which was embedded in a biocompatible elastic ripple film. The excellent conductivity of 2D material and metallic nanowires can serve as good conducting channels, while semiconductor nanoparticles are responsible for highly sensitive photoabsorption. More importantly, the elastic ripple film can be used to overcome the limit of native stretchability of the constituent nanomaterials. Combing all these unique features, we demonstrated highly stretchable and ultrasensitive phototransistors. The new designed device can be stretched up to 30% with high repeatability. The calculated photoresponsivity, photocurrent gain and detectivity is found to be 106 A W-1, 107 and 1013 Jones, respectively, which are comparable with the rigid devices. Our approach is quite general, which can be extended to many other material systems, and therefore it paves a key step for designing high performance soft optoelectronic devices with practical applications. | en |
dc.description.provenance | Made available in DSpace on 2021-07-11T14:43:38Z (GMT). No. of bitstreams: 1 ntu-105-R03222064-1.pdf: 2974955 bytes, checksum: 277a4e956bba4e61c13cdf3bcb9036e8 (MD5) Previous issue date: 2016 | en |
dc.description.tableofcontents | Contents
論文口試委員審定書 I 誌謝 II 中文摘要 III Abstract IV Contents VI List of Figures VIII Chapter 1 Introduction 1 Chapter 2 Theoretical background 4 2.1 Quantum confinement effect and Quantum dot 4 2.2 ZnO nanoparticles 7 2.3 Graphene, two-dimensional 9 2.4 Phototransistors 13 Chapter 3 Experimental details and sample preparation 15 3.1 Experimental detail 15 3.1.1 Raman scattering spectrum 15 3.1.2 Chemical vapor deposition system 20 3.1.3 Copper polish system 22 3.1.4 Device measure system 23 3.2 Sample preparation 25 3.2.1 ZnO nanoparticle synthesis. 25 3.2.2 PDMS substrate synthesis 25 3.2.3 PDMS membrane synthesis 27 3.2.4 Chemical Vapor Deposition Graphene Sheet 27 3.2.5 Fabrication process of crumpled phototransistors 27 Chapter 4 Results and discussion 30 Chapter 5 Conclusion 46 Reference 47 List of Figures Figure 2.1 Quantum confinement effect. 6 Figure 2.2 Carbon nanotubes. 10 Figure 2.3 The pristine graphene unit cell and the first Brillouin zone. 11 Figure 2.4 The energy band structure of graphene. 13 Figure 3.1 Ideal model of Stoke and Anti-Stokes Raman scattering 16 Figure 3.2 The Raman spectrum of graphene. 19 Figure 3.3 The mechanism of G band, D-band and G’(2D) band. 19 Figure 3.4 The schematic of CVD system setup 21 Figure 3.5 Illustration of the mechanism of CVD graphene 21 Figure 3.6 The target copper sheet was connect to the positive charge. 22 Figure 3.7 The translation stage, which was used to provide external strain. 23 Figure 3.8 Keithley 236 multi meter instrument 24 Figure 3.9 325nm He-Cd laser. 24 Figure 3.10 PDMS substrate synthesis 26 Figure 3.11 The Fabrication process of crumpled phototransistors. 29 Figure 3.12 The photo of thermal evaporation 29 Figure 4.1 The top view of SEM images of ZnO nanoparticles (NPs) on Si substrate, and inset in picture is the border of ZnO-NPs, showing the size of ZnO-NPs are less than 10 nm. 37 Figure 4.2 Absorption and photoluminescence spectra of ZnO nanoparticles. 37 Figure 4.3 Raman spectrum of pure PDMS (red) and single layer graphene (SLG) on PDMS (black). 38 Figure 4.4 Schematic diagram for measurement of photoresponse of the hybrid graphene-ZnO nanoparticles stretchable phototransistor. 38 Figure 4.5 Photocurrent response with the light switched on and off under the consistent power of illumination at VDS = 1V. 39 Figure 4.6 Photocurrent response with the light switched on and off under the different power of illumination. 39 Figure 4.7 Photoresponsivity and photocurrent gain of the devices under illumination with different power. 40 Figure 4.8 Response time (τ1) is calculated under different illumination power. 40 Figure 4.9 Photoresponsivity under different applied strains, showing the similar photoresponse and stable current changes in the strain range (0%-30%). 41 Figure 4.10 Calculated photoresponsivity under different strain tests, showing 41 consistently high photoresponse in the strain range (0%-30%). 41 Figure 4.11 Fatigue test of the 1st, 10th, and 30th cycles strain, showing the repeatability of the device. 42 Figure 4.12 Conductivity ratio under different strain tests, showing stable conductivity in the pre-strain range (0%-30%). 42 Figure 4.13 The linear dependence of IDS on VDS under different gate voltage. 43 Figure 4.14 Responsivity and conductivity ratio under applied gate voltage, showing the response and conductivity of device can be tuned by back-gate voltage. 43 Figure 4.15 The transfer characteristics of IDS versus Vg , in which the device was measured under different conditions for graphene deposite on SiO2 substrate, including: pure graphene without illumination(graphene/dark), ZnO nanoparticles deposited on top of graphene without illumination (ZnO-NPs /graphene/dark) and ZnO naoparticles deposited on top of graphene with 325nm laser illumination (ZnO-NPs /graphene/light). 44 Figure 4.16 Energy band diagram of graphene and ZnO-NPs before deposition 44 Figure 4.17 The band diagram after spin-coating ZnO-NPs onto graphene layer without illumination, which shows the downward band bending of ZnO-NPs. 45 Figure 4.18 Under the illumination of 325nm laser, the photogenerated electrons will tranfer from ZnO-NPs to graphene layer. 45 | |
dc.language.iso | en | |
dc.title | 高可拉伸性奈米粒子與二維材料複合光電晶體之特性研究 | zh_TW |
dc.title | High-Stretchability and High-Responsivity Semiconductor Nanoparticles/2D Hybrid Phototransistor | en |
dc.type | Thesis | |
dc.date.schoolyear | 104-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 許芳琪,沈志霖 | |
dc.subject.keyword | 可拉伸電子元件,二維材料,石墨烯,量子點,光電晶體,高響應率, | zh_TW |
dc.subject.keyword | High stretchability,high responsivity,phototransistor,two-dimensional materal,semiconductor nanoparticles, | en |
dc.relation.page | 54 | |
dc.identifier.doi | 10.6342/NTU201602286 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2016-08-11 | |
dc.contributor.author-college | 理學院 | zh_TW |
dc.contributor.author-dept | 物理學研究所 | zh_TW |
顯示於系所單位: | 物理學系 |
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