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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 林恭如 | |
dc.contributor.author | Chih Hsien Cheng | en |
dc.contributor.author | 程志賢 | zh_TW |
dc.date.accessioned | 2021-07-11T14:41:13Z | - |
dc.date.available | 2021-11-09 | |
dc.date.copyright | 2016-11-09 | |
dc.date.issued | 2016 | |
dc.date.submitted | 2016-08-22 | |
dc.identifier.citation | REFERENCE
[1] F. Demichelisa, G. Crovinia, C. F. Pirria, E. Tressoa, R. Gallonib, R. Rizzolib, C. Summonteb, F. Zignanic, R. Ravad, and A. Madane, “The influence of hydrogen dilution on the optoelectronic and structural properties of hydrogenated amorphous silicon carbide films,” Philos. Mag. B 69, 377-386 (1994). [2] M. Bhatnagar and B. J. Baliga, “Comparison of 6H-SiC, 3C-SiC, and Si for power devices,” IEEE Trans. Electron Devices 40, 645-655 (1996). [3] J. Wan, M. A. Capano, and M. R. Melloch, “Formation of low resistivity ohmic contacts to n-type 3C-SiC,” Solid State Electron. 46, 1227-1230 (2002). [4] F. Demichelis, C. F. Pirri, and E. Tresso, “Influence of doping on the structural and optoelectronic properties of amorphous and microcrystalline silicon carbide,” J. Appl. Phys. 72, 1327-1333 (1992). [5] Y.-H. Joung, H. I. Kang, J. H. Kim, H.-S. Lee, J. Lee, and W. S. Choi, “SiC formation for a solar cell passivation layer using an RF magnetron co-sputtering system,” Nanoscale Res. Lett. 7, 22 (2012). [6] M. Mori, A. Tabata, and T. Mizutani, “Properties of hydrogenated amorphous silicon carbide films prepared at various hydrogen gas flow rates by hot-wire chemical vapor deposition,” Thin Solid Films 501, 177-180 (2006). [7] K. Sugita, M. Itoh, A. Masuda, and H. Matsumura, “Fabrication of a-Si1-xCx:H thin films for solar cells by the Cat-CVD method using a carbon catalyzer,” Thin Solid Films 430, 170-173 (2003). [8] B.-C. Kang, S.-B. Lee, and J.-H. Boo, “Growth of | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/78067 | - |
dc.description.abstract | 在本研究中,我們成功利用非完美組成碳化矽薄膜進行光電元件的應用及研究。
在第一部分,我們成功利用非晶非完美組成碳化矽薄膜當作緩衝層成長氮化鎵發光二極體。利用富碳碳化矽薄膜當緩衝層時,氮化鎵發光二極體元件內的應力有效被釋放使得載子產生歐傑效應的機率降低。歐傑效應降低可以使整體元件光功率的增加。比較以富矽碳化矽當緩衝層,利用富碳碳化矽緩衝層時氮化鎵發光二極體元件有較低的啟動電壓至2.48 V,在操作電流100 mA下光功率可達106 mW,其最大外部量子效率和效率遽降分別為42.3%和7%。並且當,氮化鎵發光二極體成功轉印至金屬基板可以有效提供光電特性,其啟動電壓為2.6 V、增強的光功率為350-370 mW、增加的外部量子效率 43-45%、效率遽降為5-17% 在操作電流300 mA下。由於轉移基板的熱導係數不同會影響波長位移現象,因此轉移基板的熱導係數扮演重要角色。 在第二部分,我們成功製備出全非完美組成碳化矽異質接面薄膜太陽能電池,其元件開路電壓及短路電壓分別為0.51 V和19.7 mA/cm2,進而使得轉換效率及填充因子提升為2.24% 和26.4%。並與非晶矽薄膜太陽能電池結合形成堆疊式太陽能電池,其元件效率進一步提升至6.47%。 在最後部分,我們利用非完美組成碳化矽當作飽和吸收體應用於被動所模摻鉺光纖雷射。當碳化矽薄膜之碳/矽比增加至1.83,其薄膜之非線性折射率增加至3.86 | zh_TW |
dc.description.abstract | The fundamental and photonic application for nonstoichiometric silicon carbide (SixC1-x) films has been investigated.
For the gallium nitride (GaN) light-emitting diode (LED) application, the nonstoichiometric a-SixC1-x with different C/Si composition ratios is employed as the buffers. The EL power of the GaN LED decays when increasing Si content in the SixC1-x buffer, whereas the C-rich SixC1-x favors the a-GaN epitaxy and enables the strain relaxation to suppress the Auger recombination probability. In comparison with the GaN LED on Si-rich SixC1-x buffer, the GaN LED grown on C-rich SixC1-x/SiO2/Si substrate reveals a lower turn-on voltage of 2.48 V, a higher output power of 106 mW under bias at 100 mA, an external quantum efficiency of 42.3%, and an efficiency droop of only 7%. The GaN LED transferred to metal plates reveal improved characteristics such as reduced turn-on voltage of 2.6 V, enhanced output power of 350-370 mW, enlarged power-to-current slope of 1.15-1.24 W/A, increased external quantum efficiency of 43-45%, and decreasing efficiency droop of 15-17% under the bias current of 300 mA. In addition, the EL peak wavelength shift of the GaN LED is also dependent on the thermal conductivity of the transferring substrates. The thermal conductivity of transferred substrate can play an important role on aforementioned characteristics of the GaN LEDs on SixC1-x buffer. In the second part, all nonstoichiometric SixC1-x based single p-i-n junction solar cells are demonstrated. The open-circuit voltage and short-circuit current density of the SixC1-x based single p-i-n junction solar are enlarged to 0.51 V and to 19.7 mA/cm2, respectively, which promote the conversion efficiency up to 2.24% with a filling factor of 26.4%nging to Si-rich SixC1-x:Ge, the conversion efficiency of the Si-rich SixC1-x:Ge with the Si-rich SixC1-x:Ge multilayer is improved to 2.43%. Finally, the GeC based solar cell obtains the maximal conversion efficiency of 2.46% with the corresponding F.F. of 35%. By optim. By hydrogen-free depositing the Si-rich SixC1-x p-i-n cell on the a-Si based p-i-n cell, the Si-rich SixC1-x/a-Si hybrid tandem solar cell exhibits an increased conversion efficiency of 6.47% and an enlarged filling factor of 0.332. When the active layer cha izing the annealing process and cell area, the GeC based solar cell with the cell area increasing to 0.5 cm2 has the maximal conversion efficiency of 4.63% with its F.F of 47%. In final part, we demonstrated the nonstoichiometric SixC1-x based passively erbrium-doped mode-locked fiber laser (EDFL). The nonlinear refractive index enlarges to 3.86 | en |
dc.description.provenance | Made available in DSpace on 2021-07-11T14:41:13Z (GMT). No. of bitstreams: 1 ntu-105-F97941009-1.pdf: 4844736 bytes, checksum: 899c90c88f1032993c129b4747eaa93e (MD5) Previous issue date: 2016 | en |
dc.description.tableofcontents | CONTENTS
口試委員會審定書 i 誌謝 ii 中文摘要 iii ABSTRACT v CONTENTS viii LIST OF FIGURES xi LIST OF TABLES xvii Chapter 1 Introduction 1 1.1 Introduction on nonstoichiometric silicon carbide 1 1.2 Application of silicon carbide material applied on the GaN LED 2 1.3 Application of silicon carbide material on solar cell 3 1.4 Application of silicon carbide material on nonlinear optiscs 4 1.5 Motivation 6 1.6 Organization of thesis 7 Chapter 2 Nonstoichiometric SixC1-x as buffer layer for GaN LED Application 8 2.1 Introduction 8 2.2 Experimental Setup 9 2.2.1 The fabrication of the nonstoichiometric SixC1-x film via the PECVD synthesis 9 2.2.2 Fabrication and Measurement of GaN LED on SixC1-x/SiO2/Si substrate 9 2.2.3 Lifting-off process of the transferrable GaN LED on metallic and insulated substrates 11 2.3 Results and discussions 13 2.3.1 Material analyses of the nonstoichiometric SixC1-x buffers 13 2.3.2 Device performance of the GaN LED grown upon SixC1-x buffer 16 2.3.3 Influence of the Chemical Lifting-off Time on Light Performance of Transferable GaN LEDs 25 2.3.4 Lighting Performance of the GaN LEDs transferred onto versatile metallic and insulated substrates 27 2.4 Summary 33 Chapter 3 Nonstoichiometric SixC1-x based solar cell 37 3.1 Introduction 37 3.2 Experimental setup 38 3.2.1 Synthesis of Si-rich SixC1-x. Si-rich SixC1-x:Ge, and GeC film 38 3.2.2 The fabrication of pure Si-rich SixC1-x solar cell and hybrid SixC1-x¬/a-Si tandem solar cell 39 3.2.3 The fabrication and measurement of the solar cell with the Si-rich SixC1-x, Si-rich SixC1-x:Ge, and GeC active layer 40 3.3 Result and Discussion 41 3.3.1 The XPS analysis on the composition of the Si-rich SixC1-x films 41 3.3.2 The band structure and absorption characteristics of Si-rich SixC1-x films and cells 45 3.3.3 The photocurrent simulation of Si-rich SixC1-x based solar cells 48 3.3.4 The performance of Si-rich SixC1-x based solar cells 51 3.3.5 Hybrid Si-rich SixC1-x/a-Si and a-Si tandem solar cell 53 3.3.6 The absorption and simulated photocurrent of the different composition based Si-rich SixC1-x multilayer 56 3.3.7 The optical property of the Si-rich SixC1-x:Ge and GeC films 57 3.3.8 Simulation of the Si-rich SixC1-x, based solar cells with the series resistance. 60 3.5 Summary 61 Chapter 4 Nonstoichiometric SxC1-x based Passively Mode-Locked Erbium Doped Fiber Laser 63 4.1 Introduction 63 4.2 Experimental setup 63 4.2.1 Nonstoichiometric SixC1-x Film Preparation 64 4.2.2 The femtosecond Z-scan measurement 65 4.2.3 Architecture of mode-locked erbium-doped fiber laser. 67 4.3 Result and Discussion 69 4.3.1 Material Analysis of the nonstoichiometric SixC1-x 69 4.3.2 Femtosecond laser based Z-scan analysis on the nonlinear optical properties of the SixC1-x film 74 4.3.3 Unstablized passive mode-locking of EDFL without saturable absorber 80 4.3.4 Stabilized Passive mode-locking of EDFL with SixC1-x saturable absorber 84 4.3.5 Mechanisms related to the pulse compressing and Kelly sideband frequency shift 90 4.4 Summary 93 Chapter 5 Conclusion 96 REFERENCE 99 | |
dc.language.iso | en | |
dc.title | 非完美組成比例碳化矽薄膜的光電元件應用研究 | zh_TW |
dc.title | Nonstoichiometric Silicon Carbide (SiC) Films-Fundamental and Photonic Application | en |
dc.type | Thesis | |
dc.date.schoolyear | 104-2 | |
dc.description.degree | 博士 | |
dc.contributor.oralexamcommittee | 蔡定平,吳志毅,李柏璁,李晁逵,洪瑞華 | |
dc.subject.keyword | 非完美組成比例碳化矽薄膜,太陽能電池,緩衝層,被動光纖雷射, | zh_TW |
dc.subject.keyword | Nonstoichiometric Silicon Carbide,Solar cell,Buffer,Passively mode-locking laser, | en |
dc.relation.page | 121 | |
dc.identifier.doi | 10.6342/NTU201603470 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2016-08-22 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
顯示於系所單位: | 光電工程學研究所 |
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