請用此 Handle URI 來引用此文件:
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/78054
完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 呂宗昕(Chung-Hsin Lu) | |
dc.contributor.author | Jen-Cheng Sung | en |
dc.contributor.author | 宋仁正 | zh_TW |
dc.date.accessioned | 2021-07-11T14:40:50Z | - |
dc.date.available | 2022-02-21 | |
dc.date.copyright | 2017-02-21 | |
dc.date.issued | 2016 | |
dc.date.submitted | 2016-10-07 | |
dc.identifier.citation | [1] H. Deng, J. M. Bielicki, M. Oppenheimer, J. P. Fitts, C. A. Peters, Energy Procedia 63 (2014) 6852-6863..
[2] R. Perez and M. Perez, A Fundamental Look at Energy Reserves for the Planet, IEA/SHC Solar Update 50 (2009) 2-3. [3] A. E. Becquerel, Comptes Rendus 9 (1839) 561-567. [4] D. M. Chapin, C. S. Fuller, and G.L. Pearson, J. Appl. Phys. 25 (1954) 676-677. [5] M. A. Green, K. Emery, Y. Hishikawa, W. Warta, E. D. Dunlop, Prog. Photovolt: Res. Appl. 23 (2015) 1-9. [6] K. Masuko, M. Shigematsu, T. Hashiguchi, D. Fujishima, M. Kai, N. Yoshimura, T. Yamaguchi, Y. Ichihashi, T. Yamanishi, T. Takahama, M. Taguchi, E. Maruyama, and S. Okamoto, IEEE J. Photovolt. 4 (2014) 1433-1435. [7] A. J. Waldau, Refocus 6 (2005) 20-23. [8] D. Shvydka, A. Gupta, V. G. Karpov, and A. D. Compaan, Proceedings of NCPV and Solar Program Review Meeting, Denver, USA (2003) 397-400. [9] L. L. Kazmerski, F. R. White, and G. K. Morgan, Appl. Phys. Let. 29 (1976) 268-270. [10] R. A. Mickelsen and W. S. Chen, Conference Record of 16th IEEE photovoltaic Specialists Conference, San Diego C.A., USA, 14 (1982) 781-785. [11] W. S. Chen, J. M. Stewart, B. J. Stanbery, W. E. Devancy, and R. A. Mickelsen, Conference Record of 19th IEEE Photovoltaic Specialists Conference, New Orleans L.A., USA, 12 (1987) 1445-1447. [12] K. Kushiya, Jpn. J. Appl. Phys. 51 (2012) 10NC01. [13] S. M. Sze and K. K. Ng, Physics of Semiconductor Devices, John Wiley & Sons, Inc. (2006) p.49-102. [14] W. Shockley, Bell Syst. Tech. J. 28 (1949) 435-489. [15] S. M. Sze, Physics of Semiconductor Devices, Wiley, New York, (1981). [16] E. Machlin, Materials Science in Microelectronics II: The effects of structure on properties in thin films, Elsevier Sci. (2005) p. 31. [17] S. R. Kodigala, Thin Films and Nanostructures Cu(In1-xGax)Se2 Based Thin-film solar cells, Burlington : Elsevier Inc., 35 (2010) p. 35-41. [18] M. Turcu and U. Rau, Thin Solid Films 64 (2003) 1591-1595. [19] R. Herberholz, V. Nadenau, U. Rühle, C. Köble, H. W. Schock, and B. Dimmler, Sol. Energy Mater. Sol. Cells 49 (1997) 227-237. [20] S. S. Hegedus and W. N. Shafarman, Prog. Photovolt: Res. Appl. 12 (2004) 155-176. [21] U. Rau and M. Schmidt, Thin Solid Films 387 (2001) 141-146. [22] S. J. Fonash, Solar Cell Device Physics, Academic Press/Elsevier, Burlington, MA, (2010) 67-120. [23] B. J. Stanbery, Crit. Rev. Solid State 27 (2002) 73-117. [24] J. R. Tuttle, D. S. Albin, and R. Noufi, Solar Cells 30 (1991) 21-38. [25] S. H. Wei, S. B. Zhang, and A. Zunger, Appl. Phys. Lett. 72 (1998) 3199-3201. [26] R. Herberholz, H. W. Schock, U. Rau, J. H. Werner, T. Haalboom, T. Goedecke, F. Ernst, C. Beilharz, K. W. Benz, and D. Cahen. Conference Record of the 26th IEEE Photovoltaic Specialists Conference Anaheim, USA (1997) 323-326. [27] L. L. Kazmerski, J. Electron. Spectrosc. Relat. Phenom. 150 (2006) 105-135. [28] M. I. Alonso, K. Wakita, J. Pascual, M. Garriga, and N. Yamamoto, Phys. Rev. B 63 (2001) 075203. [29] P. D. Paulson, R. W. Birkmire, and W. N. Shafarman, J. Appl. Phys. 94 (2003) 879-888. [30] S. H. Wei and A. Zunger, J. Appl. Phys. 78 (1995) 3846-3856. [31] A. M. Gabor, J. R. Tuttle, M. H. Bode, A. Franz, A. L. Tennant, M. A. Contreras, R. Noufi, D. G. Jensen, and A. M. Hermann, Sol. Energy Mater. Sol. Cells 41-42 (1996) 247-260. [32] T. Dullweber, O. Lundberg, J. Malmström, M. Bodegard, L. Stolt, U. Rau, H. W. Schock, and J. H. Werner, Thin Solid Films 387 (2001) 11-13. [33] M. A. Contreras, J. R. Tuttle, A. Gabor, A. Tennant, K. Ramanathan, S. Asher, A. Franz, J. Keane, L. Wang, J. Scofield, and R. Noufi, 24th IEEE Photovoltaics Specialists Conference (1994) 68–75. [34] J. Hedstrom, H. Ohlsen, M. Bodegard, A. Kylner, L. Stolt, D. Hariskos, M. Ruckh, and H. Schock, 23th IEEE Photovoltaic Specialists Conference (1993) 364-371. [35] M. A. Contreras, B. Egaas, P. Dippo, J. Webb, J. Granata, K. Ramanathan, S. Asher, A. Swartzlander, and R. Noufi, 26th IEEE Photovoltaic Specialists Conference (1997) 359-362. [36] M. Bodegard, K. Granath, and L. Stolt, Thin Solid Films 361–362 (2000) 9-16. [37] D. J. Schroeder and A. A. Rockett, J. Appl. Phys. 82 (1997) 4982-4985. [38] S. Wei, S. B. Zhang, and A. Zunger, J. Appl. Phys. 85 (1999) 7214-7218. [39] D. Rudmann, D. Bremaud, A. F. Cunha, G. Bilger, A. Strohm, M. Kaelin, H. Zogg, and A. N. Tiwari, Thin Solid Films 480-481 (2005) 55-60. [40] M. Yuan, D. B. Mitzi, O. Gunawan, A. J. Kellock, S. J. Chey, and V. R. Deline, Thin Solid Films 519 (2010) 852-856. [41] Y. Yatsushiro, H. Nakakoba, T. Mise, T. Kobayashi, and T. Nakada, Jpn. J. Appl. Phys. 51(2012) 10NC25. [42] F. S. Chen, J. S. Ma, J. C. Sung, and C. H. Lu, Sol. Energy Mater. Sol. Cells, 124 (2014) 166-171. [43] H. Nakakoba, Y. Yatsushiro, T. Mise, T. Kobayashi, and T. Nakada, Jpn. J. Appl. Phys. 51 (2012) 10NC24. [44] F. S. Chen, J. C. Sung, C. Y. Yang, and C. H. Lu, J. Nanomater. 2015 (2015) 579510. [45] P. Jackson, D. Hariskos, R. Wuerz, W. Wischmann, and M. Powalla, Phys. Status Solidi RRL 8 (2014) 219-222. [46] U. P. Singh and S. P. Patra, Int. J. Photoenergy 2010 (2010) 468147. [47] M. Jubault, L. Ribeaucourt, E. Chassaing, G. Renou, D. Lincot, and F. Donsanti, Sol. Energy Mater. Sol. Cells 95 (2011) S26-S31. [48] K. Ramanathan, R. N. Bhattacharya, J. Granata, J. Webb, D. Niles, M. A. Contreras, H. Wiesner, F. S. Hasoon, and R. Noufi, 26th IEEE Photovoltaic Specialists Conference Anaheim, USA (1997) 319-322. [49] T. Wada, S. Hayashi, Y. Hashimoto, S. Nishiwaki, T. Sato, T. Negami, and M. Nishitani, 2nd IEEE World Conference on Photovoltaic Energy Conversion Vienna, Austria (1998) 403-408. [50] M. Bar, U. Bloeck, H. Muffler, M. C. Lux-Steiner, and C. Fischer, J. Appl. Phys. 97 (2005) 014905. [51] S. Ishizuka, K. Sakurai, A. Yamada, K. Matsubara, P. Fons, K. Iwata, S. Nakamura, Y. Kimura, T. Baba, H. Nakanishi, T. Kojima, and S. Niki, Sol. Energy Mater. Sol. Cells 87 (2005) 541-548. [52] U. Rau and M. Schmidt, Thin Solid Films 387 (2001) 141-146. [53] S. N. Alamri and A. W. Brinkman, J. Phys. D: Appl. Phys. 33 (2000) L1-L4. [54] A. F. da Cunha, F. Kurdesau, D. Rudmann, and P. M. P. Salomé, J. Non-Cryst. Solids 352 (2006) 1976-1980. [55] A. Romeo, M. Terheggen, D. Abou-Ras, D. L. Batzner, F. J. Haug, M. Kalin, D. Rudmann, and A. N. Tiwari, Prog. Photovolt: Res. Appl. 12 (2004) 93-111. [56] R. A. Mickelsen and W. S. Chen, 15th IEEE Photovoltaic Specialists Conference, New York (1981) 800-804. [57] R. Klenk, T. Walter, H. W. Schock, and D. Cahen, Adv. Mater. 5 (1993) 114-119. [58] J. S. Park, Z. Dong, S. Kim, and J. H. Perepezko, J. Appl. Phys. 87 (2000) 3683-3690. [59] A. M. Gabor, J. R. Tuttle, D. S. Albin, M. A. Contreras, R. Noufi, and A. M. Hermann, Appl. Phys. Lett. 65 (1994) 198–200. [60] S. P. Grindle, C. W. Smith, and S. D. Mittleman, Appl. Phys. Lett. 35 (1979) 24-26. [61] V. Alberts and M. L. Chenene, Semicond. Sci. Tech. 18 (2003) 870-875. [62] M. Marudachalam, H. Hichri, R. Klenk, R. W. Birkmire, and W. N. Shafarman, Appl. Phys. Lett. 67 (1995) 3978-3980. [63] R. Caballero, C. Guillen, M. T. Gutierrez, and C. A. Kaufmann, Prog. Photovolt. Res. Appl. 14 (2006) 145-153. [64] S. Niki, M. Contreras, I. Repins, M. Powalla, K. Kushiya, S. Ishizuka, and K. Matsubara, Prog. Photovolt. Res. Appl. 18 (2010) 453-466. [65] C. J. Hibberd, E. Chassaing, W. Liu, D. B. Mitzi, D. Lincot, and A. N. Tiwari, Prog. Photovolt. Res. Appl. 18 (2010) 434-452. [66] D. Lee and K. Yong, Korean J. Chem. Eng. 30 (2013) 1347-1358. [67] C. J. Stolle, T. B. Harvey, and B. A. Korgel, Curr. Opin. Chem. Eng. 2 (2013) 160-167. [68] C. H. Wu, F. S. Chen, S. H. Lin, and C. H. Lu, J. Alloys Compd. 509 (2011) 5783-5788. [69] C. H. Lu, C. H. Lee, and C. H. Wu, Sol. Energy Mater. Sol. Cells 94 (2010) 1622-1626. [70] V. K. Kapur, M. Fisher, and R. Roea1, Materials Research Society Symposium (2001) H2.6.1-H2.6.7. [71] V. K. Kapur, B. M. Basol, C. R. Leidholm, and R. A. Roe, US patent No. 6,127,202 A (2001). [72] C. Eberspacher and K. L. Pauls, US patent No. 6,268,014 B1 (2001). [73] V. K. Kapur, A. Bansal, P. Le, and O. I. Asensio, Thin Solid Films 431-432 (2003) 53-57. [74] J. V. Duren, D. Jackrel, F. Jacob, C. Leidholm, A. Pudov, M. Robinson, and Y. Roussilon, “The next generation in thin-film photovoltaic process technology,” 17th International Photovoltaic Science and Engineering Conference Fukuoka, Japan (2007). [75] M. Kaelin, H. Zogg, A. N. Tiwari, O. Wilhelm, S. E. Pratsinis, T. Meyer, and A. Meyer, Thin Solid Films 457 (2004) 391-396. [76] D. B. Mitzi, M. Yuan, W. Liu, A. J. Kellock, S. J. Chey, V. Deline, and A. G. Schrott, Adv. Mater. 20 (2008) 3657-3662. [77] D. B. Mitzi, M. Yuan, W. Liu, A. J. Kellock, S. J. Chey, L. Gignac, and A. G. Schrott, Thin Solid Films 517 (2009) 2158-2162. [78] T. K. Todorov, O. Gunawan, T. Gokmen, and D. B. Mitzi, Prog. Photovolt. Res. Appl. 21 (2013) 82-87. [79] M. Kaelin, D. Rudmann, F. Kurdesau, H. Zogg, T. Meyer, and A. N. Tiwari, Thin Solid Films 480 (2005) 486-490. [80] S. Ahn, T. H. Son, A. Cho, J. Gwak, J. H. Yun, K. Shin, S. K. Ahn, S. H. Park, and K. Yoon, ChemSusChem 5 (2012) 1773 -1777. [81] A. R. Uhl, C. Fella, A. Chirila, M. R. Kaelin, L. Karvonen, A. Weidenkaff, C. N. Borca, D. Grolimund, Y. E. Romanyuk, and A. N. Tiwari, Prog. Photovolt. Res. Appl. 20 (2012) 526-533. [82] W. Wang, S.Y. Han, S. J. Sung, D. H. Kim, and C. H. Chang, Phys. Chem. Chem. Phys. 14 (2012) 11154-11159. [83] S. J. Park, J.W. Cho, J. K. Lee, K. Shin, J. H. Kim, and B. K. Min, Prog. Photovolt. Res. Appl. 22 (2014) 122-128. [84] W. Zhao, Y. Cui, and D. Pan, Energy Technol. 1 (2013) 131-134. [85] T. Nakada and A. Kunioka, Appl. Phys. Lett. 74 (1999) 2444-2446. [86] M. J. Furlong, M. Froment, M. C. Bernard, R. Cortes, A. N. Tiwari, M. Krejci, H. Zogg, and D. Lincot, J. Cryst. Growth 193 (1998) 114-122. [87] K. Ramanathan, F. S. Hasoon, S. A. Smith, A, Mascarenhas, H. Al-Thani, J. Alleman, H. S. Ullal, and J. Keane, 29th IEEE Photovoltaics Specialists Conference (2002) 523-526. [88] T. P. Muneshwar,V. Varma, N. Meshram, S. Soni, and R. O. Dusane, Sol. Energy Mater. Sol. Cells 94 (2010) 1448-1450. [89] B. Selin Tosun, R. K. Feist, A. Gunawan, K. A. Mkhoyan, S. A. Campbell, and E. S. Aydil, Sol. Energy Mater. Sol. Cells 101 (2012) 270-276. [90] M. Shasti, A. Mortezaali, and R. S. Dariani1, J. Appl. Phys. 117 (2015) 023101. [91] T. Shirahata, T. Kawaharamura, S. Fujita, and H. Orita, Thin Solid Films 597 (2015) 30-38. [92] F. Eskandari, M. Ranjbar, P. Kameli, and H. Salamati, J. Alloys Compd. 649 (2015) 35-45. [93] D. Miaoa, S. Jiang, H. Zhao, S. Shang, and Z. Chen, J. Alloys Compd. 616 (2014) 26-31. [94] F. Huang, A. H. Yan, H. Zhao, Z. Li, X.P. Cai, Y.H. Wang, Y. C. Wu, S. B. Yin, and Y. H. Qiang, Cryst. Res. Technol. 49 (2015) 953-958. [95] U. P. Singh and S. P. Patra, Int. J. Photoenergy 2010 (2010) 1-19. [96] S. C. Chien, F. S. Chen, and C. H. Lu, J. Alloys Compds. 509 (2011) 8927-8932. [97] S. Seyrlinga, A. Chirilaa, D. Güttlera, P. Blöscha, F. Pianezzia, R. Vermaa, S. Büchelera, S. Nishiwakia, Y. E. Romanyuka, P. Rossbachb, and A. N. Tiwaria, Sol. Energy Mater. Sol. Cells 95 (2011) 1477-1481. [98] S. M. Schleussner, T. Törndahl, M. Linnarsson, U. Zimmermann, T. Wätjen, and M. Edoff, Prog. Photovolt. Res. Appl. 20 (2012) 284-293. [99] K. Kushiya, , Y. Tanaka, H. Hakuma, Y. Goushi, S. Kijima, T. Aramoto, and Y. Fujiwara, Thin Solid Films 517 (2009) 2108-2110. [100] G. M. Hanket, W. N. Shafarman, B. E. McCandless, and R. W. Birkmire, J. Appl. Phys. 102 (2007) 074922. [101] M. E. Calixto, K. D. Dobson, B. E. McCandless, and R. W. Birkmire, J. Electrochem. Soc. 153 (2006) G521-G528. [102] M. Harati, J. Jia, K. Giffard, K. Pellarin, C. Hewson, D. A. Love, W. M. Lau, and Z. Ding, Phys. Chem. Chem. Phys. 12 (2010) 15282-15290. [103] S. Buecheler, F. pianezzi, C. Fella, A. Chirila, K. Decock, M. Burgelman, and A. N. Tiwari, Thin Solid Films 519 (2011) 7560-7563. [104] L. Ribeaucourt, G. Savidand, D. Lincot, and E. Chassaing, Electrochimica Acta 56 (2011) 6628-6637. [105] F. S. Chen, J. S. Ma, J. C. Sung, and C. H. Lu, Sol. Energy Mater. Sol. Cells 124 (2013) 166-171. [106] R. Caballero, C. Maffiotte, and C. Guillén, Thin Solid Films 474 (2005) 70-76. [107] F. O. Adurodija, M. J. Carter, and R. Hill, 1st IEEE Photovoltaic Spec. Conf. (1994) 186-189. [108] S. F. Chichibu, M. Sugiyama, M. Ohbasami, A. Hayakawa, T. Mizutani, H. Nakanishi, T. Negami, and T. Wada, J. Cryst. Growth 243 (2002) 404-409. [109] F. S. Chen, C. Y. Yang, and C. H. Lu, J. Mater. Sci.-Mater. Electron. 25 (2014) 2443-2449. [110] F. S. Chen, J. C. Sung, and C. H. Lu, J. Mater. Sci.-Mater. Electron. 25 (2014) 2795-2802. [111] H. Rodriguez-Alvarez, N. Barreau, C. A. Kaufmann, A. Weber, M. Klaus, T. Painchaud, H. W. Schock, and R. Mainz, Acta Mater. 61 (2013) 4347-4353. [112] T. T. Wu, F. Hu, J. H. Huang, C. H. Chang, C. C. Lai, Y. T. Yen, H. Y. Huang, H. F. Hong, Z. M. Wang, C. H. Shen, J. M. Shieh, and Y. L. Chueh, ACS Appl. Mater. Interfaces 6 (2014) 4842-4849. [113] S. J. Park, Y. Cho, S. H. Moon, J. H. Kim, D. K. Lee, J. Gwak, J. Kim, and B. K. Min, J. Phys. D: Appl. Phys. 47 (2014) 135105. [114] R. Kamada, W. N. Shafarman, and R. W. Birkmire, Sol. Energy Mater. Sol. Cells 94 (2010) 451-456. [115] D. Cahen and R. Noufi, J. Phys. Chem. Solids 53 (1992) 991-1005. [116] J. J. Wu, C. Y. Yang, J. C. Sung, and C. H. Lu, J. Alloys Compd. 98 (2015) 3911-3917. [117] J. Nam, Y. Kang, D. Lee, J. Y. Yang, Y. S. Kim, C. B. Mo, S. Park, and D. Kim, Prog. Photovolt: Res. Appl. 24 (2016) 175-182. [118] T. Dullweber, G. Hanna, U. Rau, and H.W. Schock, Sol. Energy Mater. Sol. Cells 67 (2001) 145-150. [119] K. Kim, H. Park, G. M. Hanket, W. K. Kim, and W. N. Shafarman, Prog. Photovolt: Res. Appl. 23 (2015) 765-772. [120] J. C. Sung and C. H. Lu, J. Mater. Sci.-Mater. Electron. (2016) in press. [121] K. Ramanathan, M. Contreras, C. L. Perkins, S. Asher, F. S. Hasoon, J. Keane, D. Young, M. Romero, W. Metzger, R. Noufi, and J. Ward, Prog. Photovolt: Res. Appl. 11 (2003) 225-230. [122] T. P. Hsieh, C. C. Chuang, C. S. Wu, J. C. Chang, J. W. Guo, and W. C. Chen, Solid-State Electron. 56 (2011) 175-178. [123] H. Marko, L. Arzel, A. Darga, N. Barreau, S. Noël, D. Mencaraglia, and J. Kessler, Thin Solid Films 519 (2011) 7228-7231. [124] B. Canava, J. F. Guillemoles, J. Vigneron, D. Lincot, and A. Etcheberry, J. Phys. Chem. Solids. 64 (2003) 1791-1796. [125] C. H. Chen, T. Y. Lin, C. H. Hsu, S. Y. Wei, and C. H. Lai, Thin Solid Films 535 (2013) 122-126. [126] A. Laemmle, R.Wuerz, and M. Powalla, Thin Solid Films 582 (2015) 27-30. [127] A. Chirilă, P. Reinhard, F. Pianezzi, P. Bloesch, A. R. Uhl, C. Fella, L. Kranz, D. Keller,C. Gretener, H. Hagendorfer, D. Jaeger, R. Erni, S. Nishiwaki, S. Buecheler, and A. N. Tiwari, Nature Mater. 12 (2013) 1107-1111. [128] P. Jackson, D. Hariskos, R. Wuerz, O. Kiowski, A. Bauer, T. M. Friedlmeier, and M. Powalla, Phys. Status Solidi RRL 9 (2015) 28-31. [129] P. Reinhard, B. Bissig, F. Pianezzi, E. Avancini, H. Hagendorfer, D. Keller, P. Fuchs, M. Döbeli, C. Vigo, P. Crivelli, S. Nishiwaki, S. Buecheler, and A. N. Tiwari, Thin Film Solar Cells, Chem. Mater. 27 (2015) 5755-5764. [130] F. Pianezzi, P. Reinhard, A. Chirila, B. Bissig, S. Nishiwaki, S. Buecheler, and A. N. Tiwari, Phys. Chem. Chem. Phys. 16 (2014) 8843-8851. [131] I. H. Choi, Thin Solid Films 519 (2011) 4390-4393. [132] C. Rincon and F. J. Ramirez, J. Appl. Phys. 72 (1992) 4321-4324. [133] W. Witte, R. Kniese, and M. Powalla, Thin Solid Films 517 (2008) 867-869. [134] E. Filippo, D. Manno, and A. Serra, J. Alloys Compd. 538 (2012) 8-10. [135] X. Fontane, V. Izquierdo-Roca, L. Calvo-Barrio, J. Alvarez-Garcia, A. Perez-Rodriguez, J. R. Morante, and W. Witte, Appl. Phys. Lett. 95 (2009) 121907. [136] S. H. Jung, S. J. Ahn, J. H. Yun, J. H. Gwak, D. H. Kim, and K. H. Yoon, Curr. Appl. Phys. 10 (2010) 990-996. [137] P. Reinhard, F. Pianezzi, B. Bissig, A. Chirila, P. Blosch, S. Nishiwaki, S. Buecheler, and A. N. Tiwari, IEEE J. Photovolt. 5 (2015) 656-663. [138] A. Laemmle, R.Wuerz, and M. Powalla, Phys. Status Solidi RRL 7 (2013) 631-634. [139] P. Reinhard, B. Bissig, F. Pianezzi, H. Hagendorfer, G. Sozzi, R. Menozzi, C. Gretener, S. Nishiwaki, S. Buecheler, and A. N. Tiwari, Nano Lett. 15 (2015) 3334-3340. [140] K. Sakurai, R. Hunger, R. Scheer, C. A. Kaufmann, A. Yamada, T. Baba, Y. Kimura, K. Matsubara, P. Fons, H. Nakanishi, and S. Niki, Prog. Photovolt: Res. Appl. 12 (2004) 219-234. [141] O. Cojocaru-Mirédin, T. Schwarz, P.P. Choi, M. Herbig, R. Wuerz, and D. Raabe, J. Vis. Exp. 74 (2013) e50376. [142] R. Wuerz, A. Eicke, F. Kessler, S. Paetel, S. Efimenko, and C. Schlegel, Sol. Energ. Mat. Sol. Cells. 100 (2012) 132-137. [143] T. W. Chang, Y. H. Su, and W. H. Lee, J. Electrochem. Soc. 161 (2014) E167-E172. [144] Z. Tong, C. Yan, Z. Su, F. Zeng, J. Yang, Y. Li, L. Jiang, Y. Lai, and F. Liu, Appl. Phys. Lett. 105 (2014) 223903. [145] Y. Cho, E. Lee, D. W. Kim, S. Ahn, G. Y. Jeong, J. Gwak, J. H. Yun, and H. Kim, Curr. Appl. Phys., 13 (2013) 37-40. [146] W. N. Shafarman, R. Klenk, and B. E. McCandless, J. Appl. Phys. 79 (1996) 7324-7328. [147] Z. Zhou and K. Zhao, Energy Conv. Manag. 52 (2011) 2153-2156. [148] H. Bayhan and M. Bayhan, Sol. Energy 85 (2011) 769-775. [149] J. Tao, K. Zhang, C. Zhang, L. Chen, H. Cao, J. Liu, J. Jiang, L. Sun, P. Yanga, and J. Chu, Chem. Commun. 51 (2015) 10337-10340. [150] Salavei, I. Rimmaudo, F. Piccinelli, and A. Romeo, Thin Solid Films 535 (2013) 257-260. [151] J. L. Gray, Handbook of Photovoltaic Science and Engineering, Ch. 3, John Wiley & Sons, Ltd., Chichester, West Sussex, U.K., (2011) 82-129. [152] J. Y. Yang, J. Nam, D. Kim, D. Lee, and P. H. Huh, Sol. Energy Mater. Sol. Cells 144 (2016) 467-471. [153] S. H. Lin, J. C. Sung, and C. H. Lu, Thin Solid Films (2016) In press. [154] J. Y. Yang, D. Lee, K. S. Huh, S. J. Jung, J. W. Lee, H. C. Lee, D. H. Baek, B. J. Kim, D. Kim, J. Nam, G. Y. Kim, and W. Jo, RCS Adv. 5 (2015) 40719-40725. [155] T. Kobayashi, H. Yamaguchi, Z. J. L. Kao, H. Sugimoto, T. Kato, H. Hakuma, and T. Nakada, Prog. Photovolt: Res. Appl. 23 (2015) 1367-1374. [156] T. Nakada, H. Ohbo, M. Fukuda, and A. Kunioka, Sol. Energy Mater. Sol. Cells 49 (1997) 261-267. [157] X. Liu, Z. Liu, F. Meng, and M. Sugiyama, Sol. Energy Mater. Sol. Cells 124 (2014) 227-231. [158] V. Alberts, Semicond. Sci. Technol. 22 (2007) 585-592. [159] R. Blachnik and A. Müller, Thermochim. Acta 361 (2000) 31-52. [160] E. P. Zaretskaya, V. F. Gremenok, V. B. Zalesski, K. Bente, S. Shorr, and S. Zukoyunski, Thin Solid Films 515 (2007) 5848-5851. [161] S. R. Kodigala, Cu(In1-xGax)Se2 based thin film solar cells, Elsevier: Academic Press (2010). [162] M. Bär, W. Bohne, J. Rohrich, E. Strub, S. Lindner, M. C. Lux-Steiner, C. H. Fischer, T. P. Niesen, and F. Karg, J. Appl. Phys. 96 (2004) 3857-3860. [163] V. Alberts and F. D. Dejene, J. Phys. D: Appl. Phys. 35 (2002) 2021-2025. [164] X. H. Liu, X. M. Dou, and M.Sugiyama, J. Appl. Phys. 112 (2012) 123521. [165] S. Shirakata, K. Ohkubo, Y. Ishii, and T. Nakada, Sol. Energy Mater. Sol. Cells, 93 (2009) 988-992. [166] S. Shirakata and T. Nakada, Sol. Energy Mater. Sol. Cells 95 (2011) 219-222. [167] F. B. Dejene, Sol. Energy Mater. Sol. Cells 93 (2009) 577-582. [168] M. Turcu and U. Rau, Thin Solid Films 431 (2003) 158-162. [169] M. Turcu, I. M. Kötschau, and U. Rau, J. Appl. Phys. 91 (2002) 1391-1399. [170] V. Probst, W. Stetter, W. Riedl, H. Vogt, M. Wendl, H. Calwer, S. Zweigart, K. D. Ufert, B. Freienstein, H. Cervam, and F. H. Karg, Thin Solid Films 387 (2001) 262-267. [171] I. Khatri, I. Matsuyama, H. Yamaguchi, H. Fukai, and T. Nakada, Jpn. J. Appl. Phys. 54 (2015) 08KC10. [172] B. M. Basol, A. Halani, C. Leidholm, G. Norsworthy, V. K. Kapur, A. Swartzlander, and R. Matson, Prog. Photovolt. Res. Appl. 8 (2000) 227-235. [173] S. H. Chan, M. C. Li, H. S. Wei, S. H. Chen, and C. C. Kuo, J. Nanomater. 2015 (2015) 179804. [174] K. Ellmer, Nat. Photonics. 6 (2012) 809-817. [175] Y. Li, G. S. Tompa, S. Liang, C. Gorla, Y. Lu, and J. Doyle, J. Vac. Sci. Technol. A 15 (1997) 1063-1068. [176] J. Steinhauser, J. Schwenk, and A. N. Tiwari, J. Appl. Phys. 117 (2015) 225303. [177] E. G. Berasategui, C. Zubizarreta, R. Bayón, J. Barriga, R. Barros, R. Martins, and E. Fortunato, Surf. Coat. Technol. 271 (2015) 141-147. [178] C. Guillen and J. Herrero, Vacuum 84 (2010) 924-929. [179] H. L. Shen, H. Zhang, L. F. Lu, F. Jiang, and C. Yang, Prog. Nat. Sci.-Mater. Int. 20 (2010) 44-48. [180] C. L. Yeh, H. R. Hsu, S. H. Chen, and Y. S. Liu, Opt. Express 20 (2012) A806-A811. [181] M. M. Islam, S. Ishizuka, A. Yamada, K. Matsubara, S. Niki, T. Sakurai, and K. Akimoto, Appl. Surf. Sci. 257 (2011) 4026-4030. [182] H. Zhua, J. Hüpkes, E. Bunte, and S. M. Huang, Appl. Surf. Sci. 256 (2010) 4601-4605. [183] H. B. Lee, M. H. H. Jumali, R. T. Ginting, S. T. Tan, C. C. Yap, and C. H. Tan, Mater. Lett. 161 (2015) 83-88. [184] O. Kluth, G. Schöpe, J. Hüpkes, C. Agashe, J. Müller, and B. Rech, Thin Solid Films 442 (2003) 80-85. [185] C. Agashe, O. Kluth, J. Hüpkes, U. Zastrow, and B. Rech, J. Appl. Phys. 95 (2004) 1911-1917. [186] O. Kluth, G. Schöpe, B. Rech, R. menner, M. Oertel, K. Orgassa, and H. W. Schock, Thin Solid Films 502 (2006) 311-316. [187] T. Minami, K. Oohashi, S. Takata, T. Mouri, and N. Ogawa, Thin Solid Films 193 (1990) 721-729. [188] H. Sato, T. Minami, S. Takata, T. Mouri, and N. Ogawa, Thin Solid Films 220 (1992) 327-332. [189] S. Kijima and T. Nakada, Appl. Phys. Express 1 (2008) 075002. [190] H. C. Lee and O. O. H. Park, Vacuum 77 (2004) 69-77. [191] H. N. Cui, V. Teixeira, L. J. Meng, R. Martins, and E. Fortunato, Vacuum 82 (2008) 1507-1511. [192] L. Kerkache, A. Layadi, and A. Mosser, J. Alloys Compd. 485 (2009) 46-50. [193] O. Bamiduro, G. Chennamadhave, R. Mundle, R. Konda, B. Robinson, M. Bahoura, and A. K. Pradhan, Sol. Energy 85 (2011) 545-552. [194] J. I. Pankove, Optical Process in Semiconductors, Dover, New York, (1971). [195] W. S. Lau, Infrared Characterization for Microelectronics, World Scientific, Singapore, (1999). [196] J. Tauc and A. Menth, States in the gap, J Non-Cryst. Solids 8 (1972) 569-585. [197] E. Burstein, Phys. Rev. 93 (1954) 632-633. [198] T. S. Moss, Proc. Phys. Rev. B 67 (1954) 775-782. [199] Z. H. Li and S. J. Kwon, Appl. Surf. Sci. 284 (2013) 379-385. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/78054 | - |
dc.description.abstract | 本論文針對Cu(In,Ga)Se2太陽電池之光吸收層材料及透明導電層材料進行製備與特性分析。利用溶液塗佈法結合無毒硒化製程合成具黃銅礦結構之Cu(In,Ga)Se2薄膜,並作為光吸收層材料應用於Cu(In,Ga)Se2太陽電池。將溶液塗佈法製備之Cu(In,Ga)Se2薄膜進行鉀離子摻雜,有效減少薄膜中二次相的生成並改善其光電特性。為提升Cu(In,Ga)Se2薄膜之表面能隙及減少硒空缺之缺陷,藉由硫離子導入Cu(In,Ga)Se2薄膜之表面以提升薄膜之光電特性。並製備氧離子摻雜氧化鋁鋅(Al:ZnO, AZO)薄膜作為透明導電層材料以增加電池元件在近紅外光波長區段之光穿透率,可進一步提升所製備Cu(In,Ga)Se2太陽電池之電性表現。本研究針對所製備Cu(In,Ga)Se2太陽電池元件之光電特性與理想因子分析進行深入探討。
本論文第一部分採用溶液塗佈法結合無毒硒化製程製備Cu(In,Ga)Se2薄膜,以簡化製程並降低製程危險性。隨著硒蒸氣流量增加,可促進硒化反應之進行與Cu(In,Ga)Se2薄膜之晶粒成長。增加硒蒸氣的量可提高鎵梯度分布,並增強鎵梯度所造成之背電場效應。所製備之Cu(In,Ga)Se2太陽電池光電轉換效率為10.21%。本研究展示利用溶液塗佈法製備之Cu(In,Ga)Se2薄膜於合適的硒蒸氣流量下進行硒化反應,可作為一有效的製程用以製備Cu(In,Ga)Se2相關的薄膜材料。 本論文的第二部分中,為減少二次相化合物之生成並改善光吸收層材料之光電特性,開發利用鉀離子添加入溶液塗佈法製備之Cu(In,Ga)Se2薄膜中。當鉀離子加入溶液塗佈之前驅薄膜中,經硒化反應後可形成單相的Cu(In,Ga)Se2薄膜。鉀離子摻雜Cu(In,Ga)Se2薄膜具有平整之表面形貌,可有效改善CdS緩衝層的均勻覆蓋並減少載子分流路徑。所製備之鉀離子摻雜Cu(In,Ga)Se2太陽電池不需額外KCN處理,其光電轉換效率可提升至10.90%。 於論文第三部分中,探討硒化製程後進行表面硫化處理所製備之Cu(In,Ga)(Se,S)2薄膜特性變化。經表面硫化處理後,因硫離子進入Cu(In,Ga)Se2薄膜表面而形成反向能隙梯度分布,可製得具有雙能隙梯度分布之Cu(In,Ga)(Se,S)2薄膜。透過良好控制硫化反應過程中之硫化氫氣體濃度,可有效減少Cu(In,Ga)(Se,S)2薄膜中硒空位缺陷之生成。表面硫化反應處理可有效增加Cu(In,Ga)(Se,S)2太陽電池之開路電壓,因此光電轉換效率可提高至12.40%。 於本論文之第四部份,利用反應濺鍍製程製備氧離子摻雜AZO薄膜材料作為透明導電層。當基板溫度增加,促進AZO薄膜之晶粒成長並減少晶界密度,可有效降低AZO薄膜之電阻率。隨著濺鍍氣氛中的氧氣濃度增加,所製備AZO薄膜於近紅外光波長區段之平均透光率可由86.2%提高至91.4%。AZO薄膜透光率的改善可增加Cu(In,Ga)Se2¬太陽電池之光電流及光電轉換效率。於論文之最後部分,將本研究所提出之鉀離子摻雜Cu(In,Ga)Se2薄膜結合表面硫化反應製程以及氧離子摻雜AZO薄膜,可進一步提升Cu(In,Ga)(Se,S)2太陽電池之光電特性。本論文成功開發製備高效率Cu(In,Ga)(Se,S)2太陽電池之相關製程技術,有效改善Cu(In,Ga)Se2太陽電池之光電特性,可應用於提昇Cu(In,Ga)Se2薄膜太陽電池之元件表現與發展應用。 | zh_TW |
dc.description.abstract | Chalcopyrite-based absorber layers and transparent conducting layers were prepared for the application of Cu(In,Ga)Se2 thin-film solar cells in this thesis. Cu(In,Ga)Se2 films were synthesized via a solution coating route with a non-toxic selenization process. Potassium ions were doped into the solution-coated Cu(In,Ga)Se2 films to reduce the formation of secondary phases and improve the photovoltaic properties of the obtained films. Additionally, sulfur ions were incorporated into Cu(In,Ga)Se2 films for increasing the band gaps and reducing the vacancy defects of selenium near the surface region of the obtained films. For further improving the photovoltaic performance of Cu(In,Ga)Se2 solar cells, Al-doped zinc oxide (AZO) films were prepared as the transparent conducting layers for increasing the optical transmittance in near infrared (NIR) region. The photovoltaic characteristics and diode analysis of the fabricated solar cells were investigated in detail.
For reducing the processing complexity and dangerously, a solution coating process combined with a non-toxic selenization treatment were applied to prepared Cu(In,Ga)Se2 films in the first section of thesis. The increase in Se-vapor flow-rate promoted selenization reaction and grain growth of Cu(In,Ga)Se2 films. Increasing the amount of selenium vapor also elevated the gallium grading profile and enhanced the effects of back surface field. The conversion efficiency of the solar cells achieved 10.21%. The solution-coated Cu(In,Ga)Se2 films selenized with appropriate selenium-vapor flow-rate were presented to be an effective approach for the preparation of Cu(In, Ga)Se2-based absorber layers. In the second section, for reducing the secondary compounds and improving the photovoltaic properties of absorber layers, potassium ions were added into Cu(In,Ga)Se2 films. The monophasic Cu(In,Ga)Se2 films were obtained as potassium ions were incorporated into the precursor films. The potassium-ion doped Cu(In,Ga)Se2 films with smooth morphology improved the coverage of CdS buffer layer and suppressed the additional shunt paths. The conversion efficiency of the solar cells fabricated without KCN treatment was increased to 10.90 %. In the third section, the preparation of Cu(In,Ga)(Se,S)2 films via a surface sulfurization treatment followed by selenization process was investigated. After sulfurization treatment, the Cu(In,Ga)(Se,S)2 films with a double-graded band gap profiles were obtained because the incorporation of sulfur-ion into Cu(In,Ga)Se2 films formed an inverse band gap grading near the surface region. The formation of selenium vacancies in the Cu(In,Ga)(Se,S)2 films were effectively reduced with the well-controlled H2S concentration during the sulfurization. The open-circuit voltage of the prepared solar cells was increased, thereby boosting the conversion efficiency to 12.40%. In the fourth section, the oxygen-doped AZO films were deposited using a reactive sputter process. The increment in the substrate temperatures promoted the grain growth and reduced the grain boundaries of AZO films, thereby resulting in the reduction of resistivity. As oxygen concentration in the sputtering gas was raised, the average transmittance of AZO films in NIR region was increased from 86.2% to 91.4%. The improvement in the optical transmittance of AZO films led to increase the conversion efficiency of solar cells. Moreover, the photovoltaic performance of the potassium-ion doped Cu(In,Ga)(Se,S)2 films was further improved by combining with the modified AZO films. This thesis demonstrated that the new preparation processes for fabricating high-efficiency Cu(In,Ga)Se2-based solar cells were successfully developed. | en |
dc.description.provenance | Made available in DSpace on 2021-07-11T14:40:50Z (GMT). No. of bitstreams: 1 ntu-105-F99524024-1.pdf: 9809803 bytes, checksum: ccc7fcd6ae2b068aec066b2aaa92eb1f (MD5) Previous issue date: 2016 | en |
dc.description.tableofcontents | 摘要 I
Abstract III Contents V List of Figures X List of Tables XVII List of Abbreviations XVIII Chapter 1 Introduction and background 1 1.1 Preface 1 1.2 Fundamental technology of solar devises 3 1.2.1 Development of photovoltaic technology 4 1.2.2 Progress in CuInSe2-based thin-film solar cells 6 1.2.3 Operating principles of solar cells 7 1.2.3.1 P-N junction physics 7 1.2.3.2 Current-voltage and diode characteristics 9 1.2.3.3 Parasitic losses associated with series and shunt resistance 12 1.2.3.4 Recombination losses 13 1.3 Material characteristics of CuInSe2-based absorber layers 14 1.3.1 Crystal structure 15 1.3.2 Phase diagram 15 1.3.3 Gallium-ion incorporation 16 1.3.4 Sodium-ion incorporation 18 1.3.5 Other impurities doping 19 1.4 Fabrication of Cu(In,Ga)Se2 thin-film solar cells 19 1.4.1 The typical device structure of Cu(In,Ga)Se2 thin-film solar cells 20 1.4.2 Deposition techniques of Cu(In,Ga)Se2 absorber layers 23 1.4.2.1 Co-evaporation processes 23 1.4.2.2 Sputtering processes 25 1.4.2.3 Non-vacuum processes 26 1.4.3 Buffer layer deposition 31 1.4.4 Window layer preparation 32 1.5 Research objectives 33 Chapter 2 Experimental 56 2.1 Preparation of chalcopyrite absorber layers 56 2.1.1 Solution process for preparing the precursor films of absorber layers 56 2.1.2 Chalcogenization process for fabricating the absorber layers 57 2.2 Preparation of buffer layers via chemical bath deposition 58 2.3 Preparation of window layers 58 2.3.1 Sputtering process for the fabrication of tin-doped indium oxide 59 2.3.2 Sputtering process for the fabrication of indium aluminum-doped zinc oxide 59 2.4 Measurements and characterization 60 2.5 Solar cell devices fabrication and characterization 61 Chapter 3 Influence of the selenium-vapor flow-rate in the photovoltaic properties of Cu(In,Ga)Se2 thin films prepared via a solution coating process 62 3.1 Introduction 62 3.2 Results and discussion 64 3.2.1 Effects of selenium-vapor flow-rate on the crystalline phases, microstructures, and element distributions of the prepared Cu(In,Ga)Se2 films 64 3.2.2 Photovoltaic characteristics of the fabricated Cu(In,Ga)Se2 films selenized with various selenium-vapor flow-rates 66 3.3 Conclusions 69 Chapter 4 Potassium-ion Doped Cu(In,Ga)Se2 Thin Films Solar Cells: Phase Formation, Microstructures, and Photovoltaic Characteristics 78 4.1 Introduction 78 4.2 Results and discussion 80 4.2.1 Effects of potassium-ion doped concentration on the phase formation of Cu(In,Ga)Se2 films 80 4.2.2 Microstructures, electrical properties, and photovoltaic characteristics of the potassium-ion doped Cu(In,Ga)Se2 films 83 4.2.3 Diode analysis of the solar cells based on Cu(In,Ga)Se2 films incorporated with potassium ions 86 4.3 Conclusions 89 Chapter 5 Solution-processed Cu(In,Ga)(Se,S)2 solar cells with the double-graded band gaps prepared via a surface sulfurization process 101 5.1 Introduction 101 5.2 Results and discussion 103 5.2.1 Influence of sulfurization temperatures in phase formation and microstructures of Cu(In,Ga)(Se,S)2 films 103 5.2.2 Effects of H2S concentration on crystalline phases, surface morphology, and element distributions in Cu(In,Ga)(Se,S)2 films 105 5.2.3 Photoluminescence characteristics and photovoltaic performance of the resulting Cu(In,Ga)(Se,S)2 films sulfurized with various H2S concentrations 109 5.2.4 Diode analysis of the fabricated solar cells based on Cu(In,Ga)(Se,S)2 films sulfurized with various H2S concentrations 112 5.3 Conclusions 114 Chapter 6 Effects of sputtering conditions on the photovoltaic properties of Al-doped zinc oxide films for Cu(In,Ga)Se2 thin-film solar cells 131 6.1 Introduction 131 6.2 Results and discussion 132 6.2.1 Effects of substrate temperature on the formation of AZO films 132 6.2.2 Effects of oxygen concentration on structural, optical, and electrical properties of the prepared AZO films 134 6.2.3 Photovoltaic properties of Cu(In,Ga)Se2 solar cells fabricated using the prepared AZO films 138 6.2.4 Photovoltaic characteristics of the solar cells using the absorber layers based on the potassium-ion doped Cu(In,Ga)(Se,S)2 films and the transparent conducting oxide layers based on the oxygen-ion doped AZO films 140 6.3 Conclusions 142 Chapter 7 Summary 156 Reference 162 Publication List 179 | |
dc.language.iso | en | |
dc.title | 溶液製程塗佈銅銦鎵硒薄膜太陽電池之製備與光電特性分析 | zh_TW |
dc.title | Preparation and Photovoltaic Characterization of Solution-coated Cu(In,Ga)Se2 Thin-Film Solar Cells | en |
dc.type | Thesis | |
dc.date.schoolyear | 105-1 | |
dc.description.degree | 博士 | |
dc.contributor.oralexamcommittee | 萬本儒(Ben-Zu Wan),陳啟東(Chii-Dong Chen),吳嘉文(Chia-Wen Wu),溫政彥(Cheng-Yen Wen) | |
dc.subject.keyword | 溶液塗佈製程,銅銦鎵硒,薄膜太陽能電池, | zh_TW |
dc.subject.keyword | solution coating process,CIGS,thin-film solar cells, | en |
dc.relation.page | 177 | |
dc.identifier.doi | 10.6342/NTU201603612 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2016-10-07 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 化學工程學研究所 | zh_TW |
顯示於系所單位: | 化學工程學系 |
文件中的檔案:
檔案 | 大小 | 格式 | |
---|---|---|---|
ntu-105-F99524024-1.pdf 目前未授權公開取用 | 9.58 MB | Adobe PDF |
系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。