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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 黃天偉 | |
dc.contributor.author | Shao-Ting Yen | en |
dc.contributor.author | 顏紹庭 | zh_TW |
dc.date.accessioned | 2021-07-11T14:37:35Z | - |
dc.date.available | 2022-08-30 | |
dc.date.copyright | 2017-08-30 | |
dc.date.issued | 2017 | |
dc.date.submitted | 2017-08-07 | |
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/77927 | - |
dc.description.abstract | 衛星通訊和第五代行動通訊(5G)對於頻寬以及更高傳輸速率的需求與日俱增,因此,操作頻率轉向毫米波發展是現今的趨勢。
本論文主要分成三部分:第一部分為應用於Ka-band衛星通訊之功率放大器的相關研究。此功率放大器製作於180nm CMOS製程,架構上採用三級共源級,並利用集總元件來完成匹配網路,可以有效縮小晶片面積,在性能方面,在29兆赫茲的操作頻率之下此功率放大器最大功率附加效率可達24.5%,飽和輸出功率為13.1 dBm,而1dB壓縮輸出功率點為11.3 dBm,以及提供18.5 dB之小訊號增益。 第二部分展示了同樣是應用於Ka-band衛星通訊之空乏型 (D-mode) 0.15微米砷化鎵 (GaAs)製程功率放大器。此功率放大器架構上採用兩級共源級放大器,並利用直接結合(Direct Combining)的方式來達到瓦特級之輸出功率。此提出之功率放大器於28到30兆赫茲操作頻率下達到了29.3 dBm '±' 0.3 dB之飽和輸出功率,28.4 '±' 1.4%之最大功率附加效率,28.8 dBm '±' 0.3 dB之1dB壓縮輸出功率點,以及提供16.1dB之小訊號增益。 第三部分是應用於38兆赫茲之空乏型 (D-mode) 0.15微米砷化鎵 (GaAs) 製程功率放大器。此兩級功率放大器採用四路直接功率結合架構來實現高輸出功率,於36到40 GHz操作頻率下達到了27.3 dBm '±' 0.9 dB之飽和輸出功率,21.7 '±' 4%之最大功率附加效率,27 dBm '±' 0.9 dB之1dB壓縮輸出功率點,以及提供14.8dB之小訊號增益,同時3-dB頻寬達到8兆赫茲。 | zh_TW |
dc.description.abstract | In recent years, there are increasing demands for broadband high-speed wireless communication systems in millimeter-wave (MMW) frequency bands for satellite communications and fifth generation (5G) wireless communication systems. Therefore, the millimeter-wave power amplifier will play an exceedingly significant role.
This thesis is divided into three parts. In the first part, a Ka-band power amplifier for satellite communication systems using 180-nm CMOS process provided by TSMC Semiconductors is presented. The proposed PA comprises three cascaded common-source stages. By utilizing lumped-elements as matching components can make chip size minimization. The total performance of this PA achieves Psat of 13.1 dBm with 24.5% PAEmax and OP1dB of 11.3 dBm and attains the small signal gain of 18.5 dB at 29 GHz. The second part of the thesis is the proposed Ka-band PA fabricated in 0.15-µm depletion mode (D-mode) GaAs p-HEMT. Utilizing 4-way direct-combining technique achieves watt-level output power in this two-stage PA design. The total performance of this PA achieves Psat of 29.3 dBm '±' 0.3 dB with 28.4 '±' 1.4% PAEmax and OP1dB of 28.8 dBm '±' 0.3 dB and attains the small signal gain of 16.1 dB within 28 to 30 GHz. Finally, a 38 GHz PA using 0.15-µm depletion mode (D-mode) GaAs p-HEMT process is reported. The PA consists of two cascaded common-source stages with four-way direct combining architecture at output stage to achieve high power. The total performance of this PA achieves Psat of 27.3 dBm '±' 0.9 dB with 21.7 '±' 4% PAEmax and OP1dB of 27 dBm '±' 0.9 dB and attains the small signal gain of 14.8 dB within 36 to 40 GHz. | en |
dc.description.provenance | Made available in DSpace on 2021-07-11T14:37:35Z (GMT). No. of bitstreams: 1 ntu-106-R04942001-1.pdf: 25202216 bytes, checksum: b7a2deccd562be049f95c02a9da9fd3a (MD5) Previous issue date: 2017 | en |
dc.description.tableofcontents | 中文摘要 i
ABSTRACT ii CONTENTS iii LIST OF FIGURES v LIST OF TABLES xiii Chapter 1 Introduction 1 1.1 Background and Motivation 1 1.2 Literature Survey 2 1.2.1 K/Ka-band CMOS PAs 2 1.2.2 Ka/Q-band GaAs PAs 4 1.3 Thesis Organization 7 Chapter 2 Design of a Ka-band Power Amplifier in 180-nm CMOS 8 2.1 Introduction 8 2.2 Circuit Design 9 2.2.1 Device Size and Bias Point Selection 9 2.2.2 Driver Stage Design 17 2.2.3 Circuits Simulation 18 2.3 Experimental Results 25 2.4 Summary 30 Chapter 3 Design of a Ka-band Power Amplifier in 0.15-µm D-mode GaAs P-HEMT process 33 3.1 Introduction 33 3.2 Circuits Design 34 3.2.1 Device Size and Bias Point Selection 34 3.2.2 Driver Stage Design 42 3.2.3 Circuits Simulation 43 3.3 Experiment Results 50 3.4 Summary 61 Chapter 4 Design of a 38-GHz Power Amplifier in 0.15-µm D-mode GaAs P-HEMT process 63 4.1 Introduction 63 4.2 Circuit Design 64 4.2.1 Device Size and Bias Point Selection 64 4.2.2 Driver Stage Design 72 4.2.3 Circuits Simulation 73 4.3 Experiment results 79 4.3.1 Measurement Results 79 4.3.2 Discussion 91 4.4 Summary 92 Chapter 5 Conclusions 94 References 95 | |
dc.language.iso | en | |
dc.title | 應用於衛星系統與第五世代行動通訊系統之毫米波功率放大器研究 | zh_TW |
dc.title | Research of Millimeter-wave Power Amplifier For Satellite System and Fifth-Generation Mobile Communication Applications | en |
dc.type | Thesis | |
dc.date.schoolyear | 105-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 蔡作敏,蔡政翰 | |
dc.subject.keyword | 互補式金屬氧化物半導體,空乏型砷化鎵假型高速電子場效電晶體,5G無線系統,衛星通訊,功率放大器, | zh_TW |
dc.subject.keyword | CMOS,D-mode GaAs p-HEMT,5G wireless systems,satellite,power amplifier, | en |
dc.relation.page | 101 | |
dc.identifier.doi | 10.6342/NTU201702655 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2017-08-08 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電信工程學研究所 | zh_TW |
顯示於系所單位: | 電信工程學研究所 |
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