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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/77851完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 陳奕君(I-Chun Cheng) | |
| dc.contributor.author | Zhen-Chun Chen | en |
| dc.contributor.author | 陳振淳 | zh_TW |
| dc.date.accessioned | 2021-07-11T14:36:01Z | - |
| dc.date.available | 2021-09-04 | |
| dc.date.copyright | 2017-09-04 | |
| dc.date.issued | 2017 | |
| dc.date.submitted | 2017-08-18 | |
| dc.identifier.citation | [1] D. S. Ginley and C. Bright, 'Transparent conducting oxides,' Mrs Bulletin, vol. 25, no. 08, pp. 15-18, 2000.
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/77851 | - |
| dc.description.abstract | 本論文研究低溫介電質放電處理對於鈣鈦礦(Perovskite)薄膜特性的影響，並將其應用於正規結構平面式鈣鈦礦太陽能電池中。研究中鈣鈦礦薄膜(lead methylammonium tri-iodide, MAPbI3)採一步驟溶液式製程沉積在鍍上二氧化鈦(TiO2)之摻氟氧化錫(fluorine doped tin oxide, FTO)透明導電基板上，厚度約為350 nm，待其軟烤冷卻後，以介電質放電(dielectric barrier discharge, DBD)分別處理5、10、20、40和60 s，隨即塗佈電洞傳輸層Spiro-OMeTAD，最後以蒸鍍上對電極完成太陽能電池製作。藉由電漿放射光譜得知DBD可與鈣鈦礦薄膜中殘餘之有機前驅溶液反應，產生N-O放射譜線。透過X射線能譜(XPS)分析，我們發現10~20 s DBD處理能有效降低鈣鈦礦薄膜中的碳汙染。而電化學阻抗分析(electrochemical impedance spectroscopy, EIS)顯示，鈣鈦礦薄膜經DBD短時間處理後，能降低其載子複合阻抗(carrier recombination resistance)，亦即減少載子複合機率。最後，我們以電性分析發現，鈣鈦礦薄膜經DBD處理約20 s能大幅增加其分流電阻，所製作出之正規結構平面式鈣鈦礦太陽能電池的能量轉換效率達14.29 %，開路電壓為1.022 V，短路電流為19.45 mA/cm2，填充係數為0.72。相較於未經DBD處理之能量轉換效率10.32 %，開路電壓0.976 V，短路電流18.52 mA/cm2與填充係數0.57，效能有顯著的提升。
在本研究中，我們成功於一步驟沉積鈣鈦礦製程中加入低溫電漿處理，並能以短時間處理改善其界面特性，且介電質放電不需昂貴成本，對於應用於鈣鈦礦太陽能電池是一種相當有效的方法。 | zh_TW |
| dc.description.abstract | In this work, the effect of dielectric barrier discharge (DBD) on the properties of perovskite films was studied. We then applied the DBD treatment to facilate the fabrication of planar perovskite solar cells with regular structure. The 350-nm-thick perovskite (MAPbI3) thin films were deposited by one-step solution process on TiO2-coated FTO glass substrates. After soft baking on a hot plate, they were treated by DBD for 5、10、20、40 and 60 s, followd by the deposition of hole transport layers, Spiro-OMeTAD. Finally, the counter electrodes were evaporated to complete the cell process. N-O emissions were observed during the DBD treatment, indicating the plasma reacts with the residual organic precursors in the perovskite film. The X-ray photoemission spectroscopy (XPS) analysis shows that 10 to 20 s DBD treatments can effectively reduce the carbon contaminations in the perovskite thin films. The electrochemical impedance spectroscopy (EIS) analysis reveals that a short DBD treatment can increase the recombination resistance, thus reduce the carrier recombination probability in the perovskite thin film. Finally, from the I-V analysis of the cell performance, we found that a 20 s DBD treatment of the perovskite thin film can greatly enhance the shunt resistance. The solar cell with the 20 s DBD-treated perovskite exhibits an energy conversion efficiency of 14.29%, open circuit voltage of 1.022 V, short circuit current of 19.45 mA/cm2, and fill factor of 0.72, while the corresponding values for the untreated counterpart are 10.32%, 0.976 V, 18.52 mA/cm2 and 0.57, respectively. The result shows that the low-temperature DBD treatment is an effective approach to enhance the solution-processed perovskite solar cells. | en |
| dc.description.provenance | Made available in DSpace on 2021-07-11T14:36:01Z (GMT). No. of bitstreams: 1 ntu-106-R04941084-1.pdf: 6422948 bytes, checksum: 29c1ab0d56af37e8803671a9fb516070 (MD5) Previous issue date: 2017 | en |
| dc.description.tableofcontents | 致謝 i
中文摘要 ii Abstract iii 目錄 v 圖目錄 ix 表目錄 xv 第1章 緒論 1 1.1 前言 1 1.2 鈣鈦礦太陽能電池中之界面簡介 2 1.3 研究動機 3 1.4 論文架構 4 第2章 文獻回顧 5 2.1 太陽能電池 5 2.1.1 太陽能電池發展 5 2.1.2 太陽能電池特性參數 6 2.2 鈣鈦礦太陽能電池 9 2.2.1 中孔性結構 9 2.2.2 平面結構 10 2.2.3 正規結構 11 2.2.4 倒置結構 12 2.2.5 一步驟製程 13 2.2.6 兩步驟製程 15 2.2.7 蒸鍍製程 15 2.2.8 可撓性基板應用 16 2.3 鈣鈦礦之界面層 19 2.3.1 能階匹配 19 2.3.2 電洞萃取層 19 2.3.3 電子萃取層 21 2.3.4 界面層導電性 22 2.3.5 缺陷態之鈍化 23 2.3.6 元件穩定性 25 2.4 電漿 28 2.4.1 電漿原理 28 2.4.2 電漿操作電壓 30 2.4.3 常壓電漿系統 31 2.4.4 常壓電漿處理應用於太陽能電池 34 第3章 研究方法 36 3.1 製程儀器 36 3.1.1 介電質放電架設 36 3.1.2 氮氣手套箱 37 3.1.3 旋轉塗佈系統 38 3.1.4 電子束蒸鍍系統 38 3.2 量測分析 40 3.2.1 掃描式電子顯微鏡 40 3.2.2 原子力顯微鏡 41 3.2.3 傅立葉轉換紅外光譜儀 42 3.2.4 光譜分析儀 44 3.2.5 紫外光-可見光光譜儀 45 3.2.6 X光子繞射儀 46 3.2.7 X光子能譜儀 48 3.3 鈣鈦礦電池製作流程 50 3.4 太陽能電池特性分析 55 3.4.1 太陽光模擬系統 55 3.4.2 電化學阻抗分析 55 3.4.3 分流電阻分析 58 第4章 研究方法 59 4.1 電漿分析 59 4.1.1 工作溫度 59 4.1.2 電漿放射光譜 60 4.2 薄膜分析 62 4.2.1 鈣鈦礦掃描式電子顯微分析 62 4.2.2 鈣鈦礦原子力顯微分析 64 4.2.3 鈣鈦礦傅立葉轉換紅外光譜分析 67 4.2.4 鈣鈦礦吸收頻譜分析 68 4.2.5 鈣鈦礦X光子繞射分析 70 4.2.6 鈣鈦礦X光子能譜分析 73 4.3 太陽能電池特性 85 4.3.1 電性分析 85 4.3.2 電化學阻抗分析 91 第5章 結論與未來展望 93 附錄A：台大物質元件中心以介電質放電處理鈣鈦礦電池元件統計 96 附錄B：元件效率統計資料 101 附錄C：DBD處理鈣鈦礦冷卻後沉積Spiro-OMeTAD測試(溫度對Spiro-OMeTAD影響) 114 參考文獻 117 | |
| dc.language.iso | zh-TW | |
| dc.title | 以介電質放電處理之鈣鈦礦太陽能電池特性研究 | zh_TW |
| dc.title | Dielectric Barrier Discharge (DBD) Processed
CH3NH3PbI3 Layer for Perovskite Solar Cells | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 105-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 陳建彰(Jian-Zhang Chen),徐振哲(Cheng-Che Hsu),許聿翔(Yu-Hsiang Hsu) | |
| dc.subject.keyword | 介電質放電,低溫電漿處理,鈣鈦礦太陽能電池, | zh_TW |
| dc.subject.keyword | dielectric barrier discharge,low temperature plasma,perovskite solar cells, | en |
| dc.relation.page | 130 | |
| dc.identifier.doi | 10.6342/NTU201703951 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2017-08-19 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
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