請用此 Handle URI 來引用此文件:
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/77761
完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 薛文証 | |
dc.contributor.author | Tai-Wen Zhong | en |
dc.contributor.author | 鐘台文 | zh_TW |
dc.date.accessioned | 2021-07-10T22:20:16Z | - |
dc.date.available | 2021-07-10T22:20:16Z | - |
dc.date.copyright | 2017-08-30 | |
dc.date.issued | 2017 | |
dc.date.submitted | 2017-07-28 | |
dc.identifier.citation | [1] S. E. Ulloa, E. Castao, and G. Kirczenow, “Ballistic transport in a novel one-dimensional superlattice,” Phys. Rev. B 41, 12350-12353 (1990).
[2] M. Barbier, P. Vasilopoulos, and F. M. Peeters, “Dirac electrons in a kronig-penney potential: Dispersion relation and transmission periodic in the strength of the barriers,” Phys. Rev. B 80, 205415 (2009). [3] L.-G. Wang and S.-Y. Zhu, “Electronic band gaps and transport properties in graphene superlattices with one-dimensional periodic potentials of square barriers,” Phys. Rev. B 81, 205444 (2010). [4] Y. Wang, F. Xiu, L. Cheng, L. He, M. Lang, J. Tang, X. Kou, X. Yu, X. Jiang, Z. Chen, J. Zou, and K. L. Wang, “Gate-controlled surface conduction in na-doped Bi2Te3 topological insulator nanoplates,” Nano Lett 12, 1170-1175 (2012). [5] B. Huard, N. Stander, J. A. Sulpizio, and D. Goldhaber-Gordon, “Evidence of the role of contacts on the observed electron-hole asymmetry in graphene,” Phys. Rev. B 78, 121402 (2008). [6] G. Binasch, P. Grünberg, F. Saurenbach, and W. Zinn, “Enhanced magnetoresistance in layered magnetic structures with antiferromagnetic interlayer exchange,” Phys. Rev. B 39, 4828-4830 (1989). [7] M. N. Baibich, J. M. Broto, A. Fert, F. N. Van Dau, F. Petroff, P. Etienne, G. Creuzet, A. Friederich, and J. Chazelas, “Giant magnetoresistance of (001)Fe/(001)Cr magnetic superlattices,” Phys. Rev. Lett. 61, 2472-2475 (1988). [8] J. S. Moodera, L. R. Kinder, T. M. Wong, and R. Meservey, “Large magnetoresistance at room temperature in ferromagnetic thin film tunnel junctions,” Phys. Rev. Lett. 74, 3273-3276 (1995). [9] K. v. Klitzing, G. Dorda, and M. Pepper, “New method for high-accuracy determination of the fine-structure constant based on quantized hall resistance,” Phys. Rev. Lett. 45, 494-497 (1980). [10] F. D. M. Haldane, “Model for a quantum hall effect without landau levels: Condensed-matter realization of the 'parity anomaly',” Phys. Rev. Lett. 61, 2015-2018 (1988). [11] K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, “Electric field effect in atomically thin carbon films,” Science 306, 666-669 (2004). [12] C. L. Kane and E. J. Mele, “Quantum spin hall effect in graphene,” Phys. Rev. Lett. 95, 226801 (2005). [13] B. A. Bernevig and S.-C. Zhang, “Quantum spin hall effect,” Phys. Rev. Lett. 96, 106802 (2006). [14] M. König, S. Wiedmann, C. Brüne, A. Roth, H. Buhmann, L. W. Molenkamp, X.-L. Qi, and S.-C. Zhang, “Quantum spin hall insulator state in HgTe quantum wells,” Science 318, 766-770 (2007). [15] L. Fu, C. L. Kane, and E. J. Mele, “Topological insulators in three dimensions,” Phys. Rev. Lett. 98, 106803 (2007). [16] D. Hsieh, D. Qian, L. Wray, Y. Xia, Y. S. Hor, R. J. Cava, and M. Z. Hasan, “A topological dirac insulator in a quantum spin hall phase,” Nature 452, 970-974 (2008). [17] H. Zhang, C.-X. Liu, X.-L. Qi, X. Dai, Z. Fang, and S.-C. Zhang, “Topological insulators in Bi2Se3, Bi2Se3 and Sb2Te3 with a single dirac cone on the surface,” Nat Phys 5, 438-442 (2009). [18] T. Yokoyama, Y. Tanaka, and N. Nagaosa, “Anomalous magnetoresistance of a two-dimensional ferromagnet/ferromagnet junction on the surface of a topological insulator,” Phys. Rev. B 81, 121401 (2009). [19] S. Mondal, D. Sen, K. Sengupta, and R. Shankar, “Tuning the conductance of dirac fermions on the surface of a topological insulator,” Phys. Rev. Lett. 104, 046403 (2010). [20] B. D. Kong, Y. G. Semenov, C. M. Krowne, and K. W. Kim, “Unusual magnetoresistance in a topological insulator with a single ferromagnetic barrier,” Appl. Phys. Lett. 98, 243112 (2011). [21] H. Wang, X. Chen, X. Zhou, L. Zhang, and G. Zhou, “Electronic structure and transport on the surface of topological insulator attached to an electromagnetic superlattice,” Phys. B 407, 3664-3670 (2012). [22] K.-H. Zhang, Z.-C. Wang, Q.-R. Zheng, and G. Su, “Gate-voltage controlled electronic transport through a ferromagnet/normal/ferromagnet junction on the surface of a topological insulator,” Phys. Rev. B 86, 174416 (2012). [23] L. Kou, B. Yan, F. Hu, S.-C. Wu, T. O. Wehling, C. Felser, C. Chen, and T. Frauenheim, “Graphene-based topological insulator with an intrinsic bulk band gap above room temperature,” Nano Lett. 13, 6251-6255 (2013). [24] H. Li, J. M. Shao, H. B. Zhang, and G. W. Yang, “Electrical tuning of transport properties of topological insulator ultrathin films,” Nanoscale 6, 3127-3137 (2014). [25] M. Vali, D. Dideban, and N. Moezi, “Quantum well resonant tunneling FET based on topological insulator,” Superlattices and Microstructures 100, 1256-1262 (2016). [26] L. Zhao, M. Konczykowski, H. Deng, I. Korzhovska, M. Begliarbekov, Z. Chen, E. Papalazarou, M. Marsi, L. Perfetti, A. Hruban, A. Wołoś, and L. Krusin-Elbaum, “Stable topological insulators achieved using high energy electron beams,” ncomms 7, 10957 (2016). [27] M. Zhang, X. Wang, S. Zhang, Y. Gao, Z. Yu, X. Zhang, M. Gao, F. Song, J. Du, X. Wang, L. He, Y. Xu, and R. Zhang, “Unique current-direction-dependent on-off switching in BiSbTeSe topological insulator-based spin valve transistors,” IEEE Electron Device Letters 37, 1231-1233 (2016). [28] H. Goudarzi, M. Khezerlou, and S. Asgarifar, “Novel majorana mode and magnetoresistance in ferromagnetic superconducting topological insulator,” Phys. E 87, 155-160 (2017). [29] E. H. Hall, “On a new action of the magnet on electric currents,” American Journal of Mathematics 2, 287 (1879). [30] D. C. Tsui, H. L. Stormer, and A. C. Gossard, “Two-dimensional magnetotransport in the extreme quantum limit,” Phys. Rev. Lett. 48, 1559-1562 (1982). [31] X.-L. Qi and S.-C. Zhang, “The quantum spin hall effect and topological insulators,” Physics Today 63, 33-38 (2010). [32] B. D. Cullity and C. D. Graham, Introduction to Magnetic Materials, Wiley, New York (2011). [33] N. F. Mott, “Electrons in transition metals,” Adv. Phys. 13, 325-422 (1964). [34] A. Fert and I. Campbell, “Electrical resistivity of ferromagnetic nickel and iron based alloys,” J. Phys. F 6, 849 (1976). [35] J. Mathon and A. Umerski, “Theory of tunneling magnetoresistance of an epitaxial Fe/MgO/Fe(001) junction,” Phys. Rev. B 63, 220403 (2001). [36] S. Yuasa, T. Nagahama, A. Fukushima, Y. Suzuki, and K. Ando, “Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions,” Nat. Mater. 3, 868-871 (2004). [37] A. P. Ramirez, “Colossal magnetoresistance,” J. Phys.: Condens. Matter 9, 8171 (1997). [38] R. Landauer, “Spatial variation of currents and fields due to localized scatterers in metallic conduction,” IBM J. Res. Dev 1, 223 (1957). [39] N. M. R. Peres, A. H. C. Neto, and F. Guinea, “Conductance quantization in mesoscopic graphene,” Phys. Rev. B 73, 195411 (2006). | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/77761 | - |
dc.description.abstract | 本論文建構拓樸絕緣體表面上層狀結構的電子傳播行為模型,推導出電子在有限層數結構內的穿透率、電流、電導以及磁阻率等公式,接著探討拓樸絕緣體表面上不同的位障以及改變位障強度、寬度、結構週期數及排列方式對電子傳輸的影響,明顯看到施予電壓位障並不會使克萊恩穿隧通道消失,且穿透率能帶和電子入射角始終對稱,而鐵磁性材料所引起的磁位障則會打破拓樸絕緣體的時間-反轉對稱性,正向入射通道關閉,禁帶的出現使得某些能量下的電子無法穿透。
最後研究拓樸絕緣體自旋閥中的磁阻效應,發現雙層位障及週期性位障結構之磁阻率因共振效應而比單層位障結構更大,最高可達-7300%。 | zh_TW |
dc.description.abstract | In this thesis, the propagation behavior model of electron of layered structure on the topological insulator surface is constructed. The transmission, current, conductance and magnetoresistance of the finite layered structure are calculated. Then, the influence of different potential barrier on the topological insulator surface and the barrier strength, width, the period of structural and the arrangement for the electron transport are investigated. It is obvious that the application of the voltage barrier does not cause the Klein tunneling to disappear. Besides, the transmission spectra and the angle of incidence are always symmetrical. Magnetic barrier arising from ferromagnetic material will break the time reversal symmetry of topological insulator and cause normally incident channel to close. In addition, a forbidden band to make electron unable to transmit completely in some energy region is presented. Finally, the magnetoresistance effect in the spin valve of the topological insulator is studied. It is found that the magnetoresistance of the double-layer barrier and the periodic barrier structure is larger than the single-layer barrier structure due to resonance effect, and up to -7300%. | en |
dc.description.provenance | Made available in DSpace on 2021-07-10T22:20:16Z (GMT). No. of bitstreams: 1 ntu-106-R04525106-1.pdf: 3542220 bytes, checksum: 0a1a91da883350b5cdda629ed2351784 (MD5) Previous issue date: 2017 | en |
dc.description.tableofcontents | 摘要 I
ABSTRACT II 目錄 III 圖目錄 V 第一章 導論 1 1.1 背景與研究動機 1 1.2 歷史文獻回顧 2 1.3 論文架構 4 第二章 基本理論 5 2.1 霍爾效應及拓樸絕緣體 5 2.1.1 霍爾效應 5 2.1.2 量子霍爾效應 6 2.1.3 量子自旋霍爾效應 7 2.1.4 拓樸絕緣體 8 2.2 磁阻效應及自旋閥元件 10 2.2.1 常磁阻效應 11 2.2.2 巨磁阻效應 11 2.2.3 穿隧磁阻效應 14 2.2.4 自旋閥元件 16 第三章 拓樸絕緣體模型 17 3.1 漢米爾頓算符 17 3.2 波函數之本徵向量 18 3.3 轉移矩陣法 21 3.4 有限層數結構之穿透率、電導及磁阻 24 3.4.1 穿透率 24 3.4.2 電導及磁阻 27 第四章 拓樸絕緣體上不同位障之電子傳輸 31 4.1 電壓位障對電子傳輸之影響 32 4.2 平行向磁位障對電子傳輸之影響 33 4.3 垂直向磁位障對電子傳輸之影響 35 第五章 拓樸絕緣體自旋閥之磁阻效應 53 5.1 單層位障自旋閥之磁阻效應 54 5.2 雙層位障自旋閥之磁阻效應 55 5.3 週期性位障自旋閥之磁阻效應 56 第六章 結論與未來展望 64 6.1 結論 64 6.2 未來展望 66 參考文獻 67 | |
dc.language.iso | zh-TW | |
dc.title | 拓樸絕緣體自旋閥之電子傳輸 | zh_TW |
dc.title | Electronic Transport of Topological Insulator Spin Valves | en |
dc.type | Thesis | |
dc.date.schoolyear | 105-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 吳德和,鄭勝文,邱仁政 | |
dc.subject.keyword | 拓樸絕緣體,克萊恩傳輸,轉移矩陣,電導,自旋閥,磁阻, | zh_TW |
dc.subject.keyword | topological insulator,Kleining tunneling,transfer matrix,conductance,spin valve,magnetoresistance, | en |
dc.relation.page | 71 | |
dc.identifier.doi | 10.6342/NTU201702165 | |
dc.rights.note | 未授權 | |
dc.date.accepted | 2017-07-30 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 工程科學及海洋工程學研究所 | zh_TW |
顯示於系所單位: | 工程科學及海洋工程學系 |
文件中的檔案:
檔案 | 大小 | 格式 | |
---|---|---|---|
ntu-106-R04525106-1.pdf 目前未授權公開取用 | 3.46 MB | Adobe PDF |
系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。