請用此 Handle URI 來引用此文件:
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/77721
完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 莊東漢 | |
dc.contributor.author | Yan-Cheng Lin | en |
dc.contributor.author | 林彥成 | zh_TW |
dc.date.accessioned | 2021-07-10T22:17:55Z | - |
dc.date.available | 2021-07-10T22:17:55Z | - |
dc.date.copyright | 2017-08-31 | |
dc.date.issued | 2017 | |
dc.date.submitted | 2017-08-11 | |
dc.identifier.citation | 1. Lau, J.H., Ball Grid Array Technology, 1994: McGraw-Hill.
2. Giffels, C.A., et al., Interconnection Media. AT&T Technical Journal, 66, 1987, p. 31-44. 3. O. L. Anderson, H. Christensen, P. Andreatch, Technique for Connecting Electrical Leads to Semiconductors, Journal of Applied Physics, 28, 1957, p. 923. 4. Hsueh H. W., Hung F. Y., Lui T. S., Chen L. H., Chen K. J., Intermetallic Phase on the Interface of Ag-Au-Pd/Al Structure, Advances in Materials Science and Engineering, 2014, 2014, p. 1-6. 5. Wei, T.C., Daud A. R., Mechanical and Electrical Properties of Au-Al and Cu-Al Intermetallics Layer at Wire Bonding Interface, Journal of Electronic Packaging, 125, 2003, p. 617-620. 6. Harman, G. and Albers J., The Ultrasonic Welding Mechanism as Applied to Aluminum-and Gold-Wire Bonding in Microelectronics, IEEE Transactions on Parts, Hybrids, and Packaging, 13, 1977, p. 406-412. 7. Ramminger, S., N. Seliger, and G. Wachutka, Reliability model for Al wire bonds subjected to heel crack failures. Microelectronics Reliability, 40, 2000, p. 1521-1525. 8. Hamidi, A., et al., Reliability and lifetime evaluation of different wire bonding technologies for high power IGBT modules. Microelectronics Reliability, 39, 1999, p. 1153-1158. 9. Ratchev, P., S. Stoukatch, and B. Swinnen, Mechanical reliability of Au and Cu wire bonds to Al, Ni/Au and Ni/Pd/Au capped Cu bond pads, Microelectronics Reliability, 46, 2006, p. 1315-1325. 10. Fickett, D.R.S.a.F.R., Low-Temperature Properties of Silver, Journal of Research of the National Institute of Standards and Technology, 100, 1955, p. 53. 11. Black, J.R., Electromigration failure models in aluminium metallization for semiconductor devices, Proc. of the IEEE, 57, 1969, p. 1587-1594. 12. Krumbein, S.J., Metallic electromigration phenomena, IEEE Transactions on, Components, Hybrids, and Manufacturing Technology, 11, 1988, p. 5-15. 13. Chaikin, S., et al., Silver Migration and Printed Wiring, Industrial & Engineering Chemistry, 51, 1959, p. 299-304. 14. Mandal, S., A.K. Bhaduri, and V.S. Sarma, Studies on twinning and grain boundary character distribution during anomalous grain growth in a Ti-modified austenitic stainless steel, Materials Science and Engineering: A, 515, 2009, p. 134-140. 15. Chen, Y. C. and Yang, D., Failure mechanisms of solder interconnects under current stressing in advanced electronic packages, Progress in Mater. Sci., 55, 2010, p. 428-475. 16. Schwarz, K.E., Elektrolytische wanderung in flüssigen und festen metallen, Angewandle Chemie, 53, 1940, p. 217. 17. Tsai, H. H., et al. High performance Ag-Pd alloy wires for high frequency IC packages. in Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), 2013 8th International. 2013, p. 162-165. 18. Lee, J. D., Tsai, H. H, and Chung, T. H., Alloy wire and methods for manufacturing the same, US8940403 B2, 2015. 19. Lee, S.Y., et al., Effect of thermomechanical processing on grain boundary characteristics in two-phase brass, Materials Science and Engineering: A, 363, 2003, p. 307-315. 20. Liu, C.Y., Chen C., and Tu, K.N., Electromigration in Sn-Pb solder strips as a function of alloy composition, J. Appl. Phys., 88, 2000, p. 5703-5709. 21. Hsi-Ching Wang, Electromigration and Annealing Grain Structure of Ag Alloy Wires for Electronic Packaging, in National Taiwan University, Institude of Materials Science and Engineering, 2013. 22. Hsin-Jung Lin, Thermal Stability and Electromigration Durability of Annealing Twinned Ag-Pd alloy Wires, in National Taiwan University, Institude of Materials Science and Engineering, 2016 23. Saul W. Chaikin, Joan Janney, Franklin M. Church, And Charles W. Mcclelland, Silver Migration and Printed Wiring, Industrial and Engineering Chemistry, 51, 1959, p. 299-304. 24. Cho, J. H., et al., Recrystallization and grain growth of cold-drawn gold bonding wire, Metallurgical and Materials Transactions A, 34(5), 2003, p. 1113-1125. 25. Lichtenberger, H., G. Toea, and M. Zasowski, Development of low loop, long length, hydrostatically extruded bonding wire, Advanced Packaging Materials, Proceedings., 3rd International Symposium on. 1997. 26. Chang, C. C., Interfacial reactions of Ag alloy wires with wire bonded pads for IC and LED packages, in National Taiwan University, Institude of Materials Science and Engineering, 2013. 27. Xu, H., et al., Intermetallic phase transformations in Au–Al wire bonds, Intermetallics, 19, 2011, p. 1808-1816. 28. Hyoung-Joon Kim, Jong-Soo Cho, Yong-Jin Park, Jin Lee, and Kyung-Wook Paik, Effects of Pd Addition on Au Stud Bumps/Al Pads Interfacial Reactions and Bond Reliability, Journal of Electronic Materials, 33, 2004, p.1210-1218. 29. Xu, H., et al., A re-examination of the mechanism of thermosonic copper ball bonding on aluminium metallization pads, Scripta Materialia, 61, 2009, p. 165-168. 30. Shah, A., et al., In situ ultrasonic force signals during low-temperature thermosonic copper wire bonding, Microelectronic Engineering, 85, 2008, p. 1851-1857. 31. Appelt, B.K., et al., Fine pitch copper wire bonding in high volume production, Microelectronics Reliability, 51, 2011, p. 13-20. 32. In-Tae, B., J. Dae Young, and D. Yong. Electron microscopy study on intermetallic compound formation in Cu-Al bond interface, in Electronic Components and Technology Conference (ECTC), 2012. 33. Smallprecisiontools, Copper Wire Bonding Process, http://www.smallprecisiontools.com/products-and-solutions/chip-bonding-tools/bonding-capillaries/technical-guide/basics-of-ball-bonding-process/copper-wire-bonding-process/?oid=1260&lang=en. 34. C. Hang, C. Wang, M. Shi, X. Wu, and H. Wang, Study of copper free air ball in thermosonic copper ball bonding, in Electronic Packaging Technology, 2005 6th International Conference on, 2005, p. 414–418. 35. C.J. Hang, C.Q. Wang, M. Mayer, Y.H. Tian, Y. Zhou, and H.H. Wang, Growth behavior of Cu/Al intermetallic compounds and cracks in copper ball bonds during isothermal aging, Microelectronics Reliability 48, 2008, p. 416–424. 36. H. Clauberg, P. Backus, and B. Chylak, Nickel–palladium bond pads for copper wire bonding, Microelectronics Reliability, 51, 2011, p. 75–80. 37. Uno, T. and T. Yamada. Improving humidity bond reliability of copper bonding wires, in Electronic Components and Technology Conference (ECTC), 2010 Proceedings 60th, 2010. 38. Stephan, D., et al. Impact of palladium to the interfacial behavior of palladium coated copper wire on aluminium pad metallization during high temperature storage. in Electronics Packaging Technology Conference (EPTC), 2011 IEEE 13th, 2011. 39. Shiro Kobayashi, Masahiko Itoh, Akira Minato, Resin packaged semiconductor device having a protective layer made of a metal-organic matter compound, US4821148, Apr 11, 1989. 40. Lin, Y.W., et al., The Pd distribution and Cu flow pattern of the Pd-plated Cu wire bond and their effect on the nanoindentation, Materials Science and Engineering: A, 543, 2012, p. 152-157. 41. Albrecht Bischoff, Heinz Forderer, Lutz Schrapler, Frank Kruger, Copper bonding or superfine wire with improved bonding and corrosion properties, US7645522, Jan 12, 2010. 42. B. Chylak, J. Ling, H. Clauberg, and T. Thieme, Next generation nickel-based bond pads enable copper wire bonding,” ECS Transactions, 18, 2009, p. 775–785. 43. Zarkevich, N.A. and D.D. Johnson, Predicted hcp Ag-Al metastable phase diagram, equilibrium ground states, and precipitate structure, Physical Review B, 67, 2003, p. 064104. 44. Mi-Ri Choia, Hyung-Giun Kimb, Taeg-Woo Leec, et. al., Microstructural evaluation and failure analysis of Ag wire bonded to Al pads, Microelectronics Reliability, 55, 2015, p. 2306–2315. 45. Schneider Ramelow, M., et al., Development and Status of Cu Ball/Wedge Bonding in 2012, Journal of Electronic Materials, 42, 2013, p. 558-595. 46. Tao-Kuang Chang, Gold wire for use in semiconductor packaging and high-frequency signal transmission, US 6,696,756 B2, 2004 47. Gam S. A., et al., Effects of Cu and Pd addition on Au bonding wire/Al pad interfacial reactions and bond reliability, Journal of Electronic Materials, 35, 2006, p. 2048-2055. 48. Mahajan, S., et al., Formation of annealing twins in f.c.c. crystals, Acta Materialia, 45, 1997, p. 2633-2638. 49. Blewitt, T. H., Coltman, R. R. and Redman, J. K., Low-temperature deformation of copper single crystals. J. Appl. Phys, 28, 1957, p. 651–660. 50. Gray III. G.T., Deformation Twinning in Al4.8 Wt.% Mg, Acta Metall., 36, 1988, p. 1745-1754. 51. Dillamore, I.L., A determination of the stacking-fault energy of some pure F.C.C. metals, Philosophical Magazine, 9(99), 1964, p. 517-526. 52. Murr, L.E., Interfacial Phenomena in Metals and Alloys, Addison Wesley, 1975. 53. Johari, O., Substructures in explosively deformed Cu and Cu-Al alloys, Acta Metall., 12, 1964, p. 1153-1159. 54. L. Lu, Y.F. Shen, X.H. Chen, L.H. Qian, K. Lu, Ultrahigh Strength and High Electrical Conductivity in Copper, Science, 304, 2004, p. 422-426. 55. Randle, V., The coincidence site lattice and the ‘sigma enigma’, Materials Characterization, 47, 2001, p. 411-416. 56. Kumar, M., W.E. King, and A.J. Schwartz, Modifications to the microstructural topology in FCC materials through thermomechanical processing, Acta Materialia, 48, 2000, p. 2081-2091. 57. M. Gerardin, Compt. Rend., 53, 1861, p. 727. 58. W. Seith and H, Etzold, Über Die Beweglichkeit Von Gold in Festem Ble, Elektrochem., 40, 1934, p. 829-832. 59. Wever H., Uberfuhrungsversuche an festem kupfer, Elektrochem., 60, 1956, p. 1170. 60. V.B. Fiks, Sov. On the mechanism of the mobiltiy of ions in metals, Phys.,Solid state., 1, 1959, p. 14-28. 61. H. B. Huntington and A. R. Grone, Current-induced marker motion in gold wires, J. Phys. Chem. Solids, 20, 1961, p. 76-87. 62. Schoonman J., The ionic conductivity of pure and doped lead bromide single crystals, Journal of Sold State Chemistry, 4, 1972, p. 466-474. 63. R. Van Gastel, J.W.M.F., B.S. Swartzentruber and E.S.A.W.V.S., Diffusion of vacancies in metal surfaces: theory and experiment. The Chemical Physics of Solid Surfaces, 11, 2003, P. 351-370. 64. Zhao, J.H., Electromigration and Electronic Device Degradation, John Wiley & Sons, New York, NY, 1994, p. 171. 65. Blech, I.A., Electromigration in thin aluminum films on titanium nitride, Journal of Applied Physics, 47, 1976, p. 1203-1208. 66. Ames, I., F.M. d'Heurle, and R.E. Horstmann, Reduction of Electromigration in Aluminum Films by Copper Doping, IBM Journal of Research and Development, 14, 1970, p. 461-463. 67. D'Heurle, F.M., The effect of copper additions on electromigration in aluminum thin films, Metallurgical Transactions, 2, 1971, p. 683-689. 68. Hsing-Hua, T., et al. High performance Ag-Pd alloy wires for high frequency IC packages, in Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), 2013 8th International. 2013. 69. J.D. Lee, T.H.C., and H.H. Tsai, Electronic package alloy wire and methods for manufacturing the same, Taiwan patent I396756, 2013. 70. Lee, S.Y., et al., Effect of thermomechanical processing on grain boundary characteristics in two-phase brass, Materials Science and Engineering: A, 363 2003, p. 307-315. 71. C.Y. Liu, C.C., and K.N. Tu., Electromigration in Sn-Pb solder strips as a function of alloy composition, J. Appl. Phys., 88(10), 2000, p. 5703-5709. 72. Cho, J. and C.V. Thompson, Grain size dependence of electromigration‐induced failures in narrow interconnects. Applied Physics Letters, 54, 1989, p. 2577-2579. 73. Wu, K., W. Baerg, and P. Jupiter, Effects of aluminum microstructure on electromigration using a new reactive ion etching and scanning electron microscopy technique. Applied Physics Letters, 58, 1991, p. 1299-1301. 74. Austin, A.E. and N.A. Richard, Grain‐Boundary Diffusion, Journal of Applied Physics, 32, 1961, p. 1462-1471. 75. Schreiber, H.U. and B. Grabe, Electromigration measuring techniques for grain boundary diffusion activation energy in aluminum. Solid-State Electronics, 24, 1981, p. 1135-1146. 76. Lu, L., et al., Ultrahigh Strength and High Electrical Conductivity in Copper. Science, 304(5669), 2004, p. 422-426. 77. K. C. Chen, W.W.W., C. N. Liao, L. J. Chen and K. N. Tu, Observation of Atomic Diffusion at Twin-Modified Grain Boundaries in Copper. Science, 321, 2008,p. 1066-1069. 78. Saul W. Chaikin, Joan Janney,Franklin M. Church, and Charles W. Mcclelland, Silver Migration and Printed Wiring, Ind. Eng. Chem., 51, 1959, p. 299–304. 79. Greenidge, R. M. C., Institute News and Radio Notes, Proceedings of 1953 Electronic Components Symposium, Pasadena, Calif., April 29, 1953, p. 552-557. 80. Paine B. B., R.E.T.M.A., Electronic Applications Reliability Rer., 3, 1954, p. 5-6. 81. Kohman, G. T., Hermance, H. W. Downes, G. H., Silver Migration in Electrical, Bell System Tech. J. 34, 1955, p. 1115-47. 82. Wexler A., Hasegawa S., Relative humidity-temperature relationships of some saturated salt solutions in the temperature range 0 degree to 50 degrees C, J. Research. Natl. Bur. Standards, 53, 1954, p. 19. 83. H. Naguib, Bells Northern Research,on, B. MacLaurin, Silver Migration and the Reliability of Pd/Ag Conductors in Thick-Film Dielectric Crossover Structures, IEEE Transactions on Components, Hybrids, and Manufacturing Technology, 1979, p. 196 - 207. 84. Krumbein, Simeon J., Metallic electromigration phenomena, Components, Hybrids, and Manufacturing Technology, IEEE Transactions on, 11(1), 1988, p. 5-15. 85. D. E. Riemer, Meteria Selection and Design Guidelines for Migration-Resistant Thick-Film Circuits with silver-Bearing Conductors, IEEE, Trans. Comp., Hybrids, Manuf. Technol., 31, 1981, p. 287-292. 86. H. W. Pickering, Characteristic Features of Alloy Polarization Curves, Corrosion Science, 23(10), 1983, p. 1107-1120. 87. A. A. Wronkowska, A. Wronkowski, The Corrosion Behavior of Ag-Sn Alloys Investigated by Ellipsometry, Corrosion Sci., 34(2), 1993, p. 249-259. 88. J. C. Lin, J. Y. Chan, On the resistance of silver migration in Ag-Pd conductive thick films under humid environment and applied dc field, Mat. Chem. and Phys. , 43, 1996, p. 256-265. 89. J. Lin, J. Chuang, Resistance to silver electrolytic migration for thick film conductors prepared from mixed and alloyed powders of Ag-15Pd and Ag-30Pd, J. Electrochem. Soc., 144, 1997, p. 1652-1659. 90. Yi Li, and C. P. Wong, Monolayer protection for eletrochemical migration control in silver nanocomposite, Applied Physics Letters, 89, 2006, 112112. 91. Yilin Zhou, Yujia Huo, The comparison of electrochemical migration mechanism between electroless silver plating and silver electroplating, J Mater Sci: Mater Electron, 27, 2016, p. 931-941. 92. William Henry Preece, On the Heating Effects of Electric Currents, Proc. R. Soc. Lond. 36, 1883, p. 464-471. 93. William Henry Preece, On the Heating Effects of Electric Currents No. II, Proc. R. Soc. Lond. 43, 1887, p. 280-295. 94. William Henry Preece, On the Heating Effects of Electric Currents No. III, Proc. R. Soc. Lond. 44, 1888 p. 109-111. 95. E. R. Stauffacher, Short-time current carrying capacity of copper wire, general electric review, 31, 1928, p. 326-327. 96. Eugene Loh, Physical Analysis of Data on Fused-Open Bond Wires, IEEE transactions on components, Hybrids, and manufacturing technology, 6, 1983, p. 209-217 97. Moran Coxon, Charles Kershner, and Donald M. Mceligott, Transient Current Capacities of Bond Wires in Hybrid Microcircuits, IEEE transactions on components, hybrids, and manufacturing technology, 9, 1986, p. 279-285 98. Atila Mertol, Estimation of Aluminum and Gold Bond Wire Fusing Current and Fusing Time, IEEE transactions on components, packaging, and manufacturing technology, 18, 1995, p. 210-214 99. Gerhard T. Nöbauer and Herwig Moser , Analytical Approach to Temperature Evaluation in Bonding Wires and Calculation of Allowable Current, IEEE transactions on advanced packaging, 23, 2000, p. 426-435. 100. Jitesh Shah, Estimating bond wire current-carrying capacity, Power systems design, 2012, p. 22-25. 101. ASTM F1996-01, Standard test method for silver migration for membrane switch circuitry, 1996. 102. IPC-TM-650, Assessment of Susceptibility to Metallic Dendritic Growth: Uncoated Printed Wiring, 2.6.13, 1985. 103. J. J. PAUL GAGNE, Silver Migration Model for Ag-Au-Pd Conductors, IEEE transactions on components, hybrids, and manufacturing technology, 5, 1982, p. 402-407. 104. A. J. Forty, P. Durkin, A micromorphological study of the dissolution of silver-gold alloys in nitric acid, Philosophical magazine A, 42, 1980, p. 295-318. 105. Seyed Omid Gashti, Arash Fattah-alhosseini, Yousef Mazaheri, Electrochemical Behavior of Passive Films Formed on the Surface of Coarse-, Fine- and Ultra-fine-Grained AA1050 Based on a Modified PDM, Acta Metall. Sin., 2016, 29(7), p. 629-637. 106. E. Pellicer, A. Varea, S. Pané , K.M. Sivaraman, B.J. Nelson, S. Suriñach, M.D. Baró, J. Sort, A comparison between fine-grained and nanocrystalline electrodeposited Cu–Ni films Insights on mechanical and corrosion performance, Surface & Coatings Technology, 205, 2011, p. 5285-5293. 107. Ha, H. and J. Payer, The Effect of Silver Chloride Formation on the Kinetics of Silver Dissolution in Chloride Solution, Electrochim Acta, 56(7), 2011, p. 2781-2791. 108. A. S. White, L. H. Germer, The rate of oxidation of copper at room temperature, A paper presented at the Eighty-first General Meeting, held at Nashville, Tenn., April 17, 1942. 109. V. A. Lavrenko, A. I. Malyshevskaya, L. I. Kuznetsova, V. F. Litvinenko, V. N. Pavlikov, Features of high-temperature oxidation in air of silver and alloy Ag − Cu, and adsorption of oxygen on silver, Powder Metallurgy and Metal Ceramics, 45, 2006, p. 9-10. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/77721 | - |
dc.description.abstract | 銀合金線具有低電阻率、硬度低、高延展性及導熱快的特性,因此已成為打線封裝的主流線材之一;然而銀具有離子遷移問題,易造成銀鬚導致元件有短路的風險,有鑑於此,本研究的第一部份將探討銀合金線的離子遷移機制,藉由機制的瞭解,我們將探討合金元素的添加、晶粒大小及使用環境探討離子遷移對銀合金線的影響。研究的最後將探討銀合金線電遷移及熔斷電流特性。
離子遷移是採用水滴試驗法進行,研究結果發現銀線受到電解後由晶界開始釋出銀離子,部份銀離子往負極與電子結合還原成銀沉積,連續沉積的銀形成銀鬚受正電場吸引往正極連接造成短路;另一部分銀離子與氫氧鍵結合形成Ag2O於正極沉積。第二部份的研究發現,粗晶與細晶銀合金線的銀離子遷移率分別為7.90μm/s及9.22μm/s,由於銀合金的電解是於晶界進行,粗晶銀合金線的孿晶比例較高且外圍晶粒較大,並因孿晶界的低界面能減緩電解速度;然而當銀合金線的晶粒較小時,代表有較多的晶界可進行分解,因此細晶銀合金線將溶解出大量的銀離子於溶液中,而晶粒細的材料晶界較活性,能提供銀離子還原時成核位置。為瞭解環境對銀合金的影響,我們將去離子水改變為3.5 wt% NaCl 溶液進行離子遷移試驗,結果發現銀鬚完全沒有成長或跨接於正負極兩端,此現象說明由於Ag+與Cl–離子於正極形成AgCl,導致銀離子無法遷移至負極還原沉積;另一方面,若使用矽膠保護銀合金線時,即使線材浸泡於水中達1000小時也完全不會有離子遷移效應發生。 在電遷移研究中Ag-3Pd及Ag-4Pd於1.23x105 A/cm2電流密度下平均壽命分別為78000及73391分鐘;而相同電流密度下銅線及鍍鈀銅線受氧化影響僅有10 ~ 60分鐘的壽命,此結果顯示氧化問題造成銅線的平均壽命比銀合金線低1000倍;為了避免線材受到大氣氧化,當銀合金及銅線覆蓋上矽膠後平均壽命提高至74000分鐘以上,因電遷移所產生的焦耳熱透過載玻片傳導散失,並加上被矽膠覆蓋後減少氧化問題發生,減緩晶粒因焦耳熱效應快速成長。 銀合金線隨線徑增加熔斷電流由0.37A增加至0.60A,主要是因為線材截面積增加所能夠承受的電流密度也隨之提升,而當Pd含量提升1 wt%,各種線徑的熔斷電流承載能力皆下降5 ~ 8%,進一步將Ag-3Pd添加Au 元素後,所有線徑的熔斷電流大幅下降14 ~ 20%,因電阻率隨合金元素的添加而增加,導致線材需承受的總功率上升,而線材受焦耳熱效影響無法快速散熱導致線材熔斷。 | zh_TW |
dc.description.abstract | The positive characteristics of Ag alloy wire include low resistivity, low hardness, high ductility, and high thermal conductivity, all of which combine to make it one of the most popular bonding wires. However, Ag-ion migration causes electronic devices to short circuit and fail in conditions of high humidity. Therefore, the first part of this study will focus on the mechanism of ion-migration in silver alloy wires. With the understanding of the mechanism, we will discuss the effects of ion-migration on silver alloy wire by varying the alloying elements, grain sizes, and environments. In the last part of study, the electro-migration and fusing current characteristics of silver alloy wires will be discussed.
Ag ion migration has been examined using the water drop test. The results showed that the silver wire is electrolyzed at the grain boundary, releasing silver ions. Some of these Ag+ ions migrate from the anode toward the cathode and are reduced to Ag at localized sites on the cathode. A short circuit occurs between the two Ag alloy wires due to the bridging of the Ag dendrites. Some of the Ag+ ions encounter OH- ions to create AgOH products, which then decompose on the anode to form Ag2O deposits. The second part of the study will focus on the Ag ion migration rates of coarse-grained and fine-grained Ag alloy wires, 7.90μm/s and 9.22μm/s respectively. Since the silver wire is electrolyzed at the grain boundary, coarse-grained Ag alloy has higher twin percentages and the external grains are larger. The low energy of the twin boundaries can obstruct the electrolyzation at the grain boundary. However, when the grains of the silver alloy wire are fine, the greater number of grain boundaries allows faster decomposition. A large amount of silver ions dissolve in the solution because the fine grain boundaries are more active, providing positions for silver ion reduction nucleation. To understand the effects of the environment on silver alloy, we changed the distilled water to 3.5 wt% NaCl solution for migration tests. The results showed that no short circuit resulted from the Ag+ ions encountering Cl- ions to create AgCl because the silver ions cannot migrate to be negatively reduced. On the other hand, Ag-alloy wires sealed with silicone gel and stressed in distilled water revealed no dendrites after more than 1,000 hr. In the study of electromigration, during electrical stressing at a current density of 1.23x105 A/cm2, the mean-times-to-failure (MTTF) of Ag-3Pd and Ag-4Pd were 78,000 min and 73,391 min respectively. In contrast, under the same current density, copper and Pd coated Cu wire have only 10 to 60 minutes of life due to oxidation; in fact, the MTTF of copper wire is 1,000 times lower than that of silver alloy wire. In order to prevent oxidation, Ag-alloy wires and copper wires were sealed with silicone gel and stressed at a current density of 1.23x105 A/cm2. The MTTF increased to 74,000 minutes or more; electromigration caused by heat transmission through glass loss and the use the silicone gel to reduce oxidation can slow the grain growth due to heat. The fusing current characteristics of silver alloy wires increased from 0.37A to 0.6A with the increased wire diameter, because the larger cross-sectional area of the wire can withstand the increased current density. The current-carrying capacity of each Ag alloy wire is reduced by 5 to 8% by each increase in Pd content of 1 wt%. With the further addition of Au to Ag-3Pd wire, the wire diameter of the fusing current drops by 14 ~ 20%. This increase in resistivity results from the addition of alloying elements, because the Joule thermal effects cannot quickly dissipate by total power rise of ag alloy wire, and cause the wire fuses. | en |
dc.description.provenance | Made available in DSpace on 2021-07-10T22:17:55Z (GMT). No. of bitstreams: 1 ntu-106-D02527013-1.pdf: 7844514 bytes, checksum: 881ec120722853c62df0d173a460e8bc (MD5) Previous issue date: 2017 | en |
dc.description.tableofcontents | 口試委員會審定書 I
誌謝 II 中文摘要 III Abstract V 圖目錄 IX 表目錄 XII 第一章 序論 1 1.1 前言 1 1.2 研究動機 2 1.3 研究目的 3 第二章 文獻回顧與原理 6 2.1 打線接合技術(wire bonding) 6 2.1.1 金線 7 2.1.2 銅線及鍍鈀銅線 7 2.1.3 銀線與銀合金線 8 2.2 孿晶(Twin) 21 2.3 電遷移(Electromigration)理論及效應 25 2.3.1 不同元素摻雜對電遷移之影響 28 2.3.2 材料微觀結構與機械性質受電遷移的影響 29 2.4 離子遷移(Ion-migration)理論及效應 38 2.5 熔斷電流(Fusing Current) 47 第三章 實驗方法 51 3.1 實驗流程 51 3.2 線材的使用 51 3.3 實驗設備 52 3.3.1 離子遷移實驗 52 3.3.2 電遷移實驗 52 3.3.3 熔斷電流實驗 53 3.4 分析儀器 53 3.4.1離子遷移率計算 53 3.4.2電子顯微鏡及能量分散光譜儀(SEM-EDX) 53 3.4.3 聚焦離子束觀察(FIB) 54 第四章 結果與討論 60 4.1銀合金線之離子遷移研究 60 4.1.1銀合金線之離子遷移的反應機制 60 4.1.2元素對銀合金線材之離子遷移率影響 76 4.1.3晶粒大小對銀合金線之離子遷移率影響 78 4.1.4 環境對銀合金線之離子遷移影響 88 4.2 銀合金線之電遷移特性研究 95 4.2.1各種線材電遷移後平均失效時間比較 95 4.2.2封膠對各種銀合金線電遷移的影響 101 4.3銀合金線之熔斷電流特性研究 104 4.3.1不同線徑之銀合金線對熔斷電流的影響 104 第五章 結論 107 第六章 參考文獻 108 | |
dc.language.iso | zh-TW | |
dc.title | 電子封裝銀合金焊線通電流之材料特性研究 | zh_TW |
dc.title | Material Characteristic of Electronic Packaging Ag-alloy Bonding Wires under Current Stressing | en |
dc.type | Thesis | |
dc.date.schoolyear | 105-2 | |
dc.description.degree | 博士 | |
dc.contributor.oralexamcommittee | 薛富盛,方立志,蔡幸樺,王彰盟,吳春森 | |
dc.subject.keyword | 銀離子遷移,銀合金線,電遷移,熔斷電流,水滴試驗, | zh_TW |
dc.subject.keyword | Ion-migration,Ag alloy wire,Electromigration,Fusing currennt,Water drop test, | en |
dc.relation.page | 119 | |
dc.identifier.doi | 10.6342/NTU201701970 | |
dc.rights.note | 未授權 | |
dc.date.accepted | 2017-08-11 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
顯示於系所單位: | 材料科學與工程學系 |
文件中的檔案:
檔案 | 大小 | 格式 | |
---|---|---|---|
ntu-106-D02527013-1.pdf 目前未授權公開取用 | 7.66 MB | Adobe PDF |
系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。