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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 陳建彰(Jian-Zhang Chen) | |
| dc.contributor.author | Ching-Feng Fan | en |
| dc.contributor.author | 樊慶豐 | zh_TW |
| dc.date.accessioned | 2021-07-10T21:44:41Z | - |
| dc.date.available | 2021-07-10T21:44:41Z | - |
| dc.date.copyright | 2020-08-04 | |
| dc.date.issued | 2020 | |
| dc.date.submitted | 2020-07-17 | |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/77049 | - |
| dc.description.abstract | 此研究為了達到全溶液製備正規結構鈣鈦礦太陽能電池，我們以空氣為載流氣體之噴閥式塗佈奈米銀線取代真空蒸鍍銀薄膜作為正規結構太陽能電池之上電極。由於奈米銀線在製備的過程中會加入聚乙烯吡咯烷酮(N-vinylpyrrolidone, PVP)保護劑幫助奈米銀線成長，所以市售的奈米銀線通常都會殘留一層聚乙烯吡咯烷酮在奈米銀線表面上，而此種化學物質除了會使奈米銀線彼此之間的傳導率降低之外，也會使奈米銀線與下層的電洞傳輸層之間的介面接觸變差，進而導致奈米銀線與電洞傳輸層的介面有電洞萃取能障(Hole extraction barrier)，而使正結構太陽能電池的整體元件特性下降。 為了減少聚乙烯吡咯烷酮對太陽能電池元件特性的影響，在製備完正規結構太陽能電池並且噴塗完奈米銀線後，我們用低溫(<40°C)常壓介電質放電噴射電漿分別以3、2、1與0.5 cm/s的掃描速率對奈米銀線進行表面改質。經由電性分析發現最佳掃描速率為0.5 cm/s，在此掃描速率下，元件的能量轉換效率達13.00%，填充因子為61.74%，相比於未經常壓介電質放電噴射電漿處理之元件的能量轉換效率只有9.10%，填充因子則為44.07%，由此可見經由常壓介電質放電噴射電漿處理過後的元件之性能有明顯的上升。最主要的原因為奈米銀線經過常壓介電質放電噴射電漿處理過後，在銀線表面的聚乙烯吡咯烷酮被移除，改善了奈米銀線之間與奈米銀線與電洞傳輸層之間的介面接觸，而提高了太陽能電池的元件特性。藉由片電阻量測、X射線能譜分析、水接觸角量測與電化學阻抗分析的結果都指出常壓介電質放電噴射電漿處理過後確實能夠移除聚乙烯吡咯烷酮，改善元件效率。 | zh_TW |
| dc.description.abstract | In this study, in order to achieve fully-solution processed n-i-p structure perovskite solar cells (PSCs), we use jet-sprayed AgNWs to take over from vacuum-deposited Ag film as the top electrodes of n-i-p PSCs. A layer of polyvinylpyrrolidone (PVP) covers AgNWs because of the addition of PVP during the growth process of AgNWs. This PVP degenerates not only the conductivity of AgNWs layer but also the contact among AgNWs and between AgNWs and the spiro-OMeTAD HTL. PVP also becomes charge extraction barrier when used as an electrode of a PSC. In order to reduce the influence of the PVP on the performance of the PSCs, low-temperature (<40°C) atmospheric-pressure dielectric-barrier-discharge-jet (DBDjet) is used to post-treat AgNWs at scan rate 3, 2, 1, 0.5 cm/s after completing the fabrication of n-i-p PSCs. With the DBDjet treatment at scan rate of 0.5 cm/s, the cell exhibits a photoelectric conversion efficiency (PCE) of 13.00% and fill factor (F.F.) of 61.74%. Compared with the cells without DBDjet treatment (PCE of 9.10% and F.F. of 44.07%), the performance is greatly improved. DBDjet plasma treatment removes PVP, improving the interfacial contacts among AgNWs and between AgNWs layer and hole transport layer; this in turn increases the cell efficiency. Sheet resistance measurement, X-ray photoelectron spectroscopy, water contact angle measurement, and electrochemical impedance spectroscopy all show evidence about the removal of PVP layer by the DBDjet plasma treatment | en |
| dc.description.provenance | Made available in DSpace on 2021-07-10T21:44:41Z (GMT). No. of bitstreams: 1 U0001-1407202013573900.pdf: 4759488 bytes, checksum: c5356b9333478050edd4fbce2ade5e64 (MD5) Previous issue date: 2020 | en |
| dc.description.tableofcontents | 誌謝 i 中文摘要 ii Abstract iii 目錄 iv 圖目錄 viii 表目錄 xi 第1章 1 1.1 前言 1 1.2 研究動機 4 1.3 論文大綱 6 第2章 7 2.1 太陽能電池 7 2.1.1 太陽能電池之發展 7 2.1.2 太陽能電池之特性參數 8 2.2 鈣鈦礦太陽能電池 12 2.2.1 鈣鈦礦太陽能電池之介紹 12 2.2.2 中孔性結構(mesoporous structure) 13 2.2.3 平面正規結構(Planar n-i-p structure) 14 2.2.4 平面倒置結構(Planar p-i-n structure) 15 2.3 鈣鈦礦太陽能電池各層材料 17 2.3.1 透明導電玻璃基板 17 2.3.2 電子傳輸層(The electron transporting layer, ETL) 17 2.3.3 電洞傳輸層(The hole transporting layer, HTL) 18 2.3.4 對電極(counter electrode) 19 2.4 常壓電漿基本介紹 20 2.4.1 電漿介紹 20 2.4.2 常壓電漿之工作原理 23 2.4.3 常壓電漿於鈣鈦礦太陽能電池之應用 24 第3章 26 3.1 實驗材料清單 26 3.2 製程儀器 27 3.2.1 氮氣手套箱 27 3.2.2 旋轉塗佈機 28 3.2.3 噴塗機 29 3.2.4 氦氣介電質放電噴射電漿系統 30 3.3 量測儀器 32 3.3.1 掃描式電子顯微鏡 32 3.3.2 四點探針[85] 33 3.3.3 X光子能譜儀 36 3.3.4 太陽光模擬系統 36 3.3.5 電化學阻抗分析儀 37 3.4 實驗流程 40 3.4.1 玻璃基材清洗 41 3.4.2 電子傳輸層調配、塗布與燒結 41 3.4.2 鈣鈦礦層之配製與塗布 42 3.4.3 電洞傳輸層之配製與塗布 42 3.4.4 奈米銀線噴塗 42 3.4.5 常壓電漿後處理 43 第4章 45 4.1常壓介電質放電噴射電漿之溫度變化 45 4.2 常壓介電質放電噴射電漿之放射光譜 46 4.3 奈米銀線在電漿處理後之表面型態 46 4.4 奈米銀線之片電阻值量測分析 48 4.5 奈米銀線之水接觸角量測分析 50 4.6 奈米銀線之表面化學型態分析 51 4.7 鈣鈦礦太陽能電池之電性分析 57 4.8 鈣鈦礦太陽能電池之電化學阻抗 61 第5章 結論 63 附錄A 氮氣流速對氮氣大氣電漿處理氧化還原石墨烯超級電容性能之影響 64 A.1 摘要 64 A.2 實驗步驟 64 A.3 實驗結果 67 A.3.1 氧化還原石墨烯網印於碳布上之水接觸角量測分析 67 A.3.2 氧化還原石墨烯網印於碳布上之表面型態 67 A.3.3 氧化還原石墨烯超級電容之定電流充放電量測 68 A.3.4 氧化還原石墨烯超級電容之循環機械彎曲測試 71 A.4 結論 72 附錄B p-i-n鈣鈦礦太陽能電池製程開發 73 B.1 將奈米銀線當作對電極噴塗至以FTO為基板之p-i-n鈣鈦礦太陽能電池 73 B.1.1 實驗步驟 73 B.1.2 實驗結果 74 B.2 可撓性p-i-n鈣鈦礦太陽能電池 75 B.2.1 實驗步驟 75 B.2.2 實驗結果 76 參考文獻 78 | |
| dc.language.iso | zh-TW | |
| dc.subject | 奈米銀線 | zh_TW |
| dc.subject | 低溫常壓介電質放電噴射電漿 | zh_TW |
| dc.subject | 聚乙烯吡咯烷酮 | zh_TW |
| dc.subject | 噴閥式塗佈 | zh_TW |
| dc.subject | 正規結構鈣鈦礦太陽能電池 | zh_TW |
| dc.subject | silver nanowires | en |
| dc.subject | n-i-p perovskite solar cells | en |
| dc.subject | low temperature atmospheric-pressure dielectric-barrier-discharge-jet | en |
| dc.subject | polyvinylpyrrolidone | en |
| dc.subject | jet-sprayed coating | en |
| dc.title | 常壓介電質放電噴射電漿表面改質奈米銀線電極n-i-p鈣鈦礦太陽能電池製程開發 | zh_TW |
| dc.title | Atmospheric-pressure dielectric-barrier-discharge jet surface treatment of Ag nanowire electrodes for n-i-p perovskite solar cells | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 108-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 陳奕君 (I-Chun Cheng) | |
| dc.subject.keyword | 正規結構鈣鈦礦太陽能電池,奈米銀線,噴閥式塗佈,聚乙烯吡咯烷酮,低溫常壓介電質放電噴射電漿, | zh_TW |
| dc.subject.keyword | n-i-p perovskite solar cells,silver nanowires,jet-sprayed coating,polyvinylpyrrolidone,low temperature atmospheric-pressure dielectric-barrier-discharge-jet, | en |
| dc.relation.page | 88 | |
| dc.identifier.doi | 10.6342/NTU202001508 | |
| dc.rights.note | 未授權 | |
| dc.date.accepted | 2020-07-17 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 應用力學研究所 | zh_TW |
| 顯示於系所單位： | 應用力學研究所 | |
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