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標題: | 表面效應對電阻式記憶體之影響 Surface Effects on Resistive Random Access Memory |
作者: | Jr-Jian Ke 柯志堅 |
指導教授: | 吳志毅(Chih-I Wu) |
關鍵字: | 電阻式記憶體,氧化鋅,表面效應,化學吸附,吸附氧分子,表面粗糙度,電極, resistive random access memory,ZnO,surface effect,chemisorption,oxygen adatom,roughness,electrode, |
出版年 : | 2016 |
學位: | 博士 |
摘要: | 在本論文中,我們展示了表面效應對氧化鋅電阻式記憶體的電阻轉換現象有很大的影響。
分析了超過400個電阻式記憶體元件在不同氣氛下的電性,我們發現到表面效應的影響。在吸附氧氣分子濃度較高的環境下,氧化鋅電阻式記憶體有較佳的電阻轉換機率。分析結果表明氧化鋅表面的吸附氧氣分子與氧缺陷構建的奈米燈絲兩者的交互作用對電阻式記憶的電阻轉換扮演很重要的腳色。此外我們也發現到電阻轉換機率可以藉由表面粗糙度來調控。表面較粗糙的氧化鋅電阻式記憶體有較佳的電阻轉換機率以及在不同氣氛環境下電性較為穩定。我們也做了電極相依性的研究。結果顯示金屬鉑的氣體吸附活化能較低。於是使用鉑作為氧化鋅電阻記憶體的電極有較佳的表現。 In this thesis, we demonstrated that the surface effect significantly affects the resistive switching functionality of ZnO resistive random access memory (ReRAM). The statistical analysis for over 400 cells provides essential evidence for evaluating the surface effect on resistive switching. The pronounced chemisorption of oxygen adatoms leads to the better resistive switching probability, suggesting that the interaction between oxygen adatoms and oxygen vacancies associated with the conductive nanofilaments near the electrode/ZnO interface plays a crucial role in resistive switching behaviors. In addition, the switching functionality of ZnO ReRAM can be controlled by the surface roughness. The rougher surface possesses pronounced chemisorption of oxygen adatoms, making the ZnO ReRAM with rougher surface has better switching probability and more stable electrical properties. Moreover, the electrode dependence of switching behaviors shows that the ZnO ReRAM with Pt as electrodes has better electrical properties. The Pt electrodes have a lower activation energy for the chemisorption process, resulting in better resistive switching performance. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/76751 |
DOI: | 10.6342/NTU201601050 |
全文授權: | 未授權 |
顯示於系所單位: | 光電工程學研究所 |
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