Skip navigation

DSpace

機構典藏 DSpace 系統致力於保存各式數位資料(如:文字、圖片、PDF)並使其易於取用。

點此認識 DSpace
DSpace logo
English
中文
  • 瀏覽論文
    • 校院系所
    • 出版年
    • 作者
    • 標題
    • 關鍵字
    • 指導教授
  • 搜尋 TDR
  • 授權 Q&A
    • 我的頁面
    • 接受 E-mail 通知
    • 編輯個人資料
  1. NTU Theses and Dissertations Repository
  2. 電機資訊學院
  3. 電信工程學研究所
請用此 Handle URI 來引用此文件: http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/7620
完整後設資料紀錄
DC 欄位值語言
dc.contributor.advisor王暉
dc.contributor.authorYu-Hsuan Linen
dc.contributor.author林毓軒zh_TW
dc.date.accessioned2021-05-19T17:48:06Z-
dc.date.available2023-03-02
dc.date.available2021-05-19T17:48:06Z-
dc.date.copyright2018-03-02
dc.date.issued2018
dc.date.submitted2018-02-12
dc.identifier.citation[1] Federal Communications Commission, Technical Report Section 15.253, 15.255,15.257, Oct. 2007. [Online]. Available: http://www.fcc.gov/oet/info/rule s/part15.
[2] Standard for Information Technology—Telecommunications and Information Ex-change Between Systems—Local and Metropolitan Area Networks—Specific Re-quirements. Part 15.3: Wireless Medium Access Control (MAC) and Physical Layer (PHY) Specifications for High Rate Wireless Personal Area Networks (WPANs). Amendment 2: Millimeter-Wave-Based Alternative Physical Layer Extension, IEEE Standard 802.15.3c-2009, 2009.
[3] “Allocations and Service Rules for the 71-76 GHz, 81-86 GHz and 92-95 GHz Bands,” pdf , Federal Communications Commission, Tech. Rep. FCC 03-248, Nov. 2003.[Online]. Available: http://hraunfoss.fcc.gov/edocs public/attachmatch/FCC- 03- 248A 1.pdf.
[4] J. Lee, Y. A. Li, M. H. Hung and S. J. Huang, “A Fully-Integrated 77-GHz FMCW Radar Transceiver in 65-nm CMOS Technology,” IEEE J. Solid-State Circuits, vol. 45, no. 12, pp. 2746-2756, Dec. 2010.
[5] P. J. Peng, P. N. Chen, C. Kao, Y. L. Chen and J. Lee, “A 94 GHz 3D Image Radar Engine With 4TX/4RX Beamforming Scan Technique in 65 nm CMOS Technology,” IEEE J. Solid-State Circuits, vol. 50, no. 3, pp. 656-668, Mar. 2015.
[6] J.-O. Plouchart, J. Kim, V. Karam, R. Trzcinski, and J. Gross, “Performance varia-tions of a 66 GHz static CML divider in 90 nm CMOS,” in IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, Feb. 2006, pp.2142–2151.
[7] D. Kim, J. Kim, and C. Cho, “A 94 GHz locking hysteresis-assisted and tunable CML static divider in 65 nm SOI CMOS,” in IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, 2008, pp. 460–461.
[8] W.-S. Chang, K.-W. Tan, and S.-H. Hsu, “A 56.5–72.2 GHz transformer-injection Miller frequency divider in 0.13 m CMOS,” IEEE Microw. Wireless Compon. Lett., vol. 20, no. 7, pp. 393–395, Jul. 2010.
[9] S. Rong and H. C. Luong, “A 0.8V 57GHz-to-72GHz differential-input frequency divider with locking range optimization in 0.13 m CMOS,” in Proc. IEEE Asian Solid-State Circuits Conf., Nov. 2010.
[10] P. Mayr, C. Weyers, and U. Lang, “A 90 GHz 65 nm CMOS injection-locked fre-quency divider,” in IEEE Int. Solid-State Circuits Conf. Dig.Tech. Papers, Feb. 2007, pp. 189–199.
[11] C.-Y. Wu and C.-Y. Yu, “Design and analysis of a millimeter-wave direct injec-tion-locked frequency divider with large frequency divider with large frequency locking range,” IEEE Trans. Microw. Theory Techn., vol. 55, no. 8, pp. 1649–1658, Aug. 2007.
[12] K.-H. Tsai, L.-C. Cho, J.-H. Wu, and S.-I. Liu, “3.5 mW W-band frequency divid-er with wide locking range in 90 nm CMOS technology,” in IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, Feb. 2008, pp. 466–467.
[13] C.-C. Chen, H.-W. Tsao, and H. Wang, “Design and analysis of CMOS frequency dividers with wide input locking ranges,” IEEE Trans. Microw. Theory Techn., vol. 57, no. 12, pp. 3060–3069, Dec. 2009.
[14] B.-Y. Lin and S.-I. Liu, “Analysis and design of D-band injection-locked fre-quency dividers,” IEEE J. Solid-State Circuits, vol. 46, no.6, pp. 1250–1264, Jun. 2011.
[15] Y. Chao and H. C. Luong, “Analysis and design of a 2.9-mW 53.4–79.4-GHz fre-quency-tracking injection-locked frequency dividerin 65-nm CMOS,” IEEE J. Solid-State Circuits, vol. 48, no. 10,pp. 2403–2418, Oct. 2013.
[16] F. Ellinger, H. Jackel and W. Bachtold, “Varactor-loaded transmission-line phase shifter at C-band using lumped elements,” IEEE Trans. Microw. Theory Tech., vol. 51, no 4, pp. 1135-1140, Apr. 2003.
[17] F. Ellinger, R. Vogt and W. Bachtold, 'Compact reflective-type phase-shifter MMIC for C-band using a lumped-element coupler,' IEEE Trans. on Microw. Theory Techn., vol. 49, no. 5, pp. 913-917, May 2001.
[18] M.-D. Tsai and A. Natarajan, “60 GHz passive and active RF-path phase shifters in silicon,” in IEEE Radio Frequency Integrated Circuits Symp. (RFIC) Dig., 2009, pp. 223–226.
[19] M. Tabesh, A. Arbabian, A. Niknejad, “60GHz low-loss compact phase shifters using a transformer-based hybrid in 65nm CMOS,” IEEE Custom Integrated Cir-cuits Conference (CICC), 19-21 Sept. 2011, pp. 1-4.
[20] R.-B. Yishay and D. Elad, 'A 57–66 GHz reflection-type phase shifter with near-constant insertion loss,' in IEEE MTT-S Int. Microw. Symp. Dig. (IMS), San Francisco, CA, 2016, pp. 1-4.
[21] K.-J. Koh and G. M. Rebeiz, “0.13-μm CMOS phase shifters for X-, Ku-, and K-band phased arrays,” IEEE J. Solid-State Circuits, vol. 42, no. 11, pp. 2535-2546, Nov. 2007.
[22] W. Shin and G. M. Rebeiz, “60 GHz active phase shifter using an optimized quadrature all-pass network in 45nm CMOS,” in in IEEE MTT-S Int. Microw. Symp. Dig., Jun. 2012.
[23] J.-C. Wu, et al., “A 60-GHz single-ended-to-differential vector sum phase shifter in CMOS for phased-array receiver,” in IEEE MTT-S Int. Microw. Symp. Dig., Jun. 2011.
[24] P.-J. Peng, J.-C. Kao, and H. Wang, “A 57–66 GHz vector sum phase shifter with low phase/amplitude error using a wilkinson power divider with LHTL/RHTL elements,” in Proc. IEEE Compound Semicond. Integr. Circuits Symp., Oct. 2011, pp. 1–4
[25] D.-W. Kang, H. Lee, C.-H. Kim, and S. Hong, “Ku-band MMIC phase shifter us-ing a parallel resonator with 0.18-m CMOS technology,” IEEE Trans. Microw. Theory Techn., vol. 54, no. 1, pp. 294–300, Jan. 2006.
[26] B.-W. Min and G. M. Rebeiz, “Single-ended and differential Ka-band BiCMOS phased array front ends,” IEEE J. Solid-State Circuits, vol.43, no. 10, pp. 2239–2250, Oct. 2008.
[27] W.-T. Li, Y.-C. Chiang, J.-H. Tsai, H.-Y. Yang, J.-H. Cheng, and T.-W. Huang, “60-GHz 5-bit phase shifter with integrated VGA phase-error compensation,” IEEE Trans. Microw. Theory Techn., vol. 61, no. 3,pp. 1224–1235, Mar. 2013.
[28] S. Y. Kim and Gabriel M. Rebeiz, “A 4-bit passive phase shifter for automotive radar applications in 0.l3 m CMOS,” in IEEE CSIC Symp. Dig., pp. 1-4, Oct. 2009.
[29] H.-S. Lee and B.-W. Min, “W-band CMOS 4-bit phase shifter for high power and phase compression points,” IEEE Trans. Circuits Syst. II, Exp. Briefs, vol. 62, no. 1, pp. 1–5, Jan. 2015.
[30] J. F. Buckwalter, A. Babakhani, A. Komijani, and A. Hajimiri, “An integrated subharmonic coupled-oscillator scheme for a 60-GHz phased-array transmitter,” IEEE Trans. Microw. Theory Techn., vol. 54, no. 12, pp. 4271–4280, Dec. 2006.
[31] L. Wu, A. Li and H. C. Luong, “A 4-Path 42.8-to-49.5 GHz LO Generation With Automatic Phase Tuning for 60 GHz Phased-Array Receivers,” IEEE J. Sol-id-State Circuits, vol. 48, no. 10, pp. 2309-2322, Oct. 2013.
[32] T. Kijsanayotin, J. Li and J. F. Buckwalter, “A 70-GHz LO Phase-Shifting Bidi-rectional Frontend Using Linear Coupled Oscillators,” IEEE Trans. on Microw. Theory Techn., vol. 65, no. 3, pp. 892-904, March 2017.
[33] N. Ebrahimi, P.-Y. Wu, M. Bagheri and J. F. Buckwalter, “A 71–86-GHz Phased Array Transceiver Using Wideband Injection-Locked Oscillator Phase Shifters,” in IEEE Trans. on Microw. Theory Techn., vol. 65, no. 2, pp. 346-361, Feb. 2017.
[34] R. L. Miller, “Fractional-frequency generators utilizing regenerative modulation,” Proc. Inst. Radio Eng, vol. 27, pp. 446-456, Jul. 1939.
[35] J. Lee and B. Razavi, “A 40-GHz frequency divider in 0.18- μm CMOS technol-ogy,” IEEE J. Solid-State Circuits, vol. 39, no. 4, pp. 594–601,Apr. 2004.
[36] H. R. Rategh and T. H. Lee, “Superharmonic injection-locked frequency dividers,” IEEE J. Solid-State Circuits, vol. 34, no. 6, pp.813–821, Jun. 1999.
[37] B. Razavi, “A study of injection locking and pulling in oscillators,” IEEE J. Sol-id-State Circuits, vol. 39, no. 9, pp. 1415–1424, Sep. 2004.
[38] R. Adler, “A study of locking phenomena in oscillators,” Proc. IEEE, vol. 61, no. 10, pp. 1380-1385, Oct. 1973
[39] H. Wu and A. Hajimiri, “A 19 GHz 0.5 mW 0.35 μm CMOS frequency divider with shunt-peaking locking-range enhancement,” in IEEE Int. Solid-State Circuits Conf. Dig., Feb. 2001, pp. 412–413.
[40] M. Tiebout, “A CMOS direct injection-locked oscillator topology as high-frequency low-power frequency divider,” IEEE J. Solid-State Circuits, vol. 39, no. 7, pp. 1170–1174, Jul. 2004.
[41] Y.-H. Kuo and J.-H. Tsai T.-W. Huang and H. Wang, “Design and analysis of dig-ital-assisted bandwidth-enhanced Miller divider in 0.18 m CMOS process,” IEEE Trans. Microw. Theory Techn., vol.60, no.12, pp.3769-3777, Dec. 2012.
[42] J.-H. Tsai, “Design of 40–108-GHz low-power and high-speedCMOS up-/down-conversion ring mixers for multistandard MMW radio applications,” IEEE Trans. Microw. Theory Techn., vol. 60, no. 3,pp. 670–678, Mar. 2012.
[43] J.-C. Chien and L.-H. Lu, “40 GHz wide-locking-range regenerative frequency divider and low-phase-noise balanced VCO in 0.18 μ m CMOS,” in IEEE Int. Solid-State Circuits Conf. Dig, Feb. 2007, pp. 544–545.
[44] J. Yin and H. C. Luong, “A 0.8 V 1.9 mW 53.7-to-72.0 GHz self-frequency-tracking injection-locked frequency divider,” in Proc. IEEE Ra-dio-Freq. Integr. Circuits Symp., Jun. 2012, pp. 305–308.
[45] B.-Y. Lin, K.-H. Tsai, and S.-I. Liu, “A 128.24-to-137.00 GHz injection-locked frequency divider in 65 nm CMOS,” in IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, Feb. 2009, pp.282–283.
[46] Q. Gu, Z. Xu, D. Huang, T. LaRocca, N. Wang, W. Hant, and M. F. Chang, “A low power V-band CMOS frequency divider with wide locking range and accurate quadrature output phases,” IEEE J. Solid-State Circuits, vol. 43, no. 4, pp. 991–998, Apr. 2008.
[47] B.-Y. Lin and S.-I. Liu, “A 113.92 ~ 118.08 GHz Injection-Locked Frequency Di-vider With Triple-Split-Inductor Technique,” IEEE Microw. Wireless Compon. Lett., vol. 21, no. 8, pp. 436-438, Aug. 2011.
[48] S. Rong and H. C. Luong, “Analysis and Design of Transformer-Based Dual-Band VCO for Software-Defined Radios,” IEEE Trans. Circuits Syst. I: Reg. Papers, vol. 59, no. 3, pp. 449-462, March 2012.
[49] J. Yin and H. C. Luong, “A 57.5–90.1-GHz Magnetically Tuned Multimode CMOS VCO,” IEEE J. Solid-State Circuits, vol. 48, no. 8, pp. 1851-1861, Aug. 2013.
[50] Sonnet User’s Guide, 12th ed. North Syracuse, NY: Sonnet Software, Inc., 2009.
[51] T.-N. Luo and Y.-J. E. Chen, “A 0.8-mW 55-GHz dual-injection-locked CMOS frequency divider,” IEEE Trans. Microw. Theory Techn., vol. 56, no. 3, pp. 620–625, Mar. 2008.
[52] A. Hajimiri, H. Hashemi, A. Natarajan, X. Guan, and A. Komijani,“Integrated phased array system in silicon,” Proc. IEEE, vol. 93, no. 9,pp. 1637–1655, Sep. 2005.
[53] A. Hajimiri, A. Komijani, A. Natarajan, R. Chunara, X. Guan and H. Hashemi, 'Phased array systems in silicon,' IEEE Communications Magazine, vol. 42, no. 8, pp. 122-130, Aug. 2004.
[54] Y.-A. Atesal, B. Cetinoneri, K.-M. Ho, and G. M. Rebeiz, “A two-channel 8–20-GHz SiGe BiCMOS receiver with selectable IFs for multibeam phased-array digital beamforming applications,” IEEE Trans. Microw. Theory Techn., vol. 59, no. 3, pp. 716–726, Mar. 2011.
[55] M. Tabesh et al., “A 65 nm CMOS 4-Element Sub-34 mW/Element 60 GHz Phased-Array Transceiver,” IEEE J. Solid-State Circuits, vol. 46, no. 12, pp. 3018-3032, Dec. 2011.
[56] I.-S. Song, G. Yoon and C.-S. Park, “A Highly Integrated 1-Bit Phase Shifter Based on High-Pass/Low-Pass Structure,” IEEE Microw. Wireless Compon. Lett, vol. 25, no. 8, pp. 523-525, Aug. 2015.
[57] H. Hashemi, X. Guan, A. Komijani, and A. Hajimiri, “A 24-GHz SiGe phased-array receiver-LO phase shifting approach,” IEEE Trans. Microw. Theory Tech., vol. 53, no. 2, pp. 614–626, Feb. 2005.
[58] A. Natarajan, A. Komijani, X. Guan, A. Babakhani, and A. Hajimiri, “A 77-GHz phased-array transceiver with on-chip antennas in silicon: Transmitter and local LO-path phase shifting,” IEEE J. Solid-State Circuits, vol. 41, no. 12, pp. 2807–2819, Dec. 2006.
[59] A. Valdes-Garcia et al., “A fully integrated 16-element phased-array transmitter in SiGe BiCMOS for 60-GHz communications,” IEEE J. Solid-State Circuits, vol. 45, no. 12, pp. 2757–2773, Dec. 2010.
[60] A. Natarajan et al., “A fully-integrated 16-element phased-array receiver in SiGe BiCMOS for 60-GHz communications,” IEEE J. Solid-State Circuits, vol. 46, no. 5, pp. 1059–1075, May 2011.
[61] S. Emami et al., “A 60 GHz CMOS phased-array transceiver pair for multi-Gb/s wireless communications,” in IEEE Int. Solid-State Circuits Conf. (ISSCC) Dig. Tech. Papers, Feb. 2011, pp. 164–166.
[62] J.-L. Kuo, et al., “60-GHz four-element phased-array transmit/receive sys-tem-in-package using phase compensation techniques in 65-nm flip-chip CMOS process,” IEEE Trans. Microw. Theory Techn., vol. 60, no. 3, pp. 743–756, Mar. 2012.
[63] S. Y. Kim and G. M. Rebeiz, “A Low-Power BiCMOS 4-Element Phased Array Receiver for 76–84 GHz Radars and Communication Systems,” IEEE J. Sol-id-State Circuits, vol. 47, no. 2, pp. 359-367, Feb. 2012
[64] L.-H. Lu and Y.-T. Liao, “A 4-GHz phase shifter MMIC in 0.18-μm CMOS,” IEEE Microw. Wireless Compon. Lett, vol. 15, no. 10, pp. 694-696, Oct. 2005.
[65] B. Sadhu et al., 'A 28-GHz 32-Element TRX Phased-Array IC With Concurrent Dual-Polarized Operation and Orthogonal Phase and Gain Control for 5G Com-munications,' IEEE J. Solid-State Circuits, vol. 52, no. 12, pp. 3373-3391, Dec. 2017.
[66] H.-Y. Chang, P.-S. Wu, T.-W. Huang, H. Wang, C.-L. Chang, and J. G. J. Chern, “Design and analysis of CMOS broadband compact high-linearity modulators for gigabit microwave/millimeter-wave applications,” IEEE Trans. Microw. Theory Tech., vol. 54, no. 1, pp. 20–30,Jan. 2006.
[67] S. Patnaik and R. Harjani, “A 24-GHz phased-array receiver in 0.13- μm CMOS using an 8-GHz LO,” in Proc. IEEE Radio Freq. Integr. Circuits Symp. (RFIC), May 2010, pp. 465–468.
dc.identifier.urihttp://tdr.lib.ntu.edu.tw/jspui/handle/123456789/7620-
dc.description.abstract本論文主要分為兩部分,分別是毫米波寬頻除頻器和毫米波低相位移和振幅誤差之相移器。
第一部分是有關毫米波寬頻除頻器的研究。除頻器是鎖相迴路中的關鍵電路之一,在毫米波頻段的米勒除頻器(Miller frequency divider)和注入鎖定式除頻器(Injection-locked frequency divider)廣泛的被使用,然而和低頻率的除頻器相比頻寬受到相當大的限制,因此本論文提出兩個方法,用來改善兩種毫米波除頻器的頻寬。第一個除頻器是操作在60GHz且使用65奈米CMOS製程製作的米勒除頻器。此除頻器使用了弱反轉區(weak inversion region)偏壓的混頻器使其能達到57%的鎖定比例頻寬(35.7至64.2 GHz),而且功耗僅1.6毫瓦。第二個除頻器是使用分裂式變壓器耦合振盪器(split transformer-coupled oscillator)的注入鎖定式除頻器。使用了此架構的注入鎖定式除頻器可以增加操作頻率和鎖定頻寬且不會增加額外晶片面積及功率消耗。此注入鎖定式除頻器在不需要額外調控機制下達到25.4%的鎖定比例頻寬(75.1至97 GHz),且在0.7V供給電壓下有2.45毫瓦的功率消耗。
第二部分是有關應用在60GHz相位陣列的毫米波低相位移和振幅誤差之相移器設計。相移器為相位陣列(phased array)系統中的關鍵元件,本論文中,設計了一種低相位移和振幅誤差的四相位旋轉器由四相位產生器和相位選擇器所組成,用以搭配射頻(RF)端和本地振盪源(LO)端相移器,使這兩個相移器皆能達到360度的相移而且具有低相位移和振幅誤差的特性。射頻端相移器是基於開關式相移器所設計,是全被動的架構且達到四位元的數位式控制。此相移器最大均方根振幅誤差為0.5dB,最大的均方根相位誤差為5度。另一個本地震盪源端相移器使採用注入鎖定式架構,此相移器達最大震幅誤差為±0.3 dB,最大相為誤差為5度。具有-10 B dBm的輸出功率和18 毫瓦的功率消耗。
zh_TW
dc.description.abstractThis dissertation consists of two main parts, the first part is design of wide band-width millimeter-wave (MMW) frequency divider, and the second part is about 60 GHz phase shifter with low phase and amplitude error.
In the first part, two MMW frequency dividers for MMW PLL are presented. The first frequency divider is 60 GHz Miller divider demonstrated in 65 nm CMOS. The Miller divider achieves 57% input locking range from 35.7 to 64.2 GHz with power consumption of 1.6 mW owing to using weak inversion bias mixer. The second fre-quency divider is a W-band injection-locked frequency divider (ILFD) fabricated in 90 nm CMOS, The STCO (split transformer-coupled oscillator) technique is proposed and utilized in ILFD and the operation frequency and locking range of the proposed ILFD can be increased without extra chip area and power consumption. The input locking range is 25.4% from 75.1 to 97 GHz at 0-dBm input power without any frequency tun-ing mechanism. The dc power consumption is 2.45 mW with a 0.7-V supply voltage.
The second part is about phase shifter design for 60 GHz phased array system. A RF phase shifter and a LO phase shifter are presented and fabricated in 90 nm CMOS. The quadrature phase rotator (QPR) included vector generator and vector selector is proposed and applied in both phase shifter to achieve 360° phase shift with low phase and amplitude error. The proposed RF phase shifter based on STPS (switch type phase shifter) is all passive and fully digital control with 4 bit resolution. It demonstrates the maximum RMS amplitude error of 0.5 dB and phase error of 5°. Another proposed LO phase shifter based on ILPS (injection-locked phase shifter) exhibits the maximum am-plitude error of ±0.3 dB and phase error of 5°. The output power of the proposed LO phase shifter is -10 dBm with 18 mW dc consumption.
en
dc.description.provenanceMade available in DSpace on 2021-05-19T17:48:06Z (GMT). No. of bitstreams: 1
ntu-107-F99942093-1.pdf: 5103114 bytes, checksum: e81eff74f216f61d6fa9e30209cec1df (MD5)
Previous issue date: 2018
en
dc.description.tableofcontents誌謝 i
中文摘要 ii
ABSTRACT iv
CONTENTS vi
LIST OF FIGURES ix
LIST OF TABLES xiv
Chapter 1 Introduction 1
1.1 Background and Motivation 1
1.2 Literature Survey 3
1.2.1 MMW frequency dividers 3
1.2.2 MMW phase shifters 6
1.3 Contributions 9
1.4 Dissertation Organization 11
Chapter 2 Millimeter-wave Frequency Divider Design 12
2.1 Overview of Frequency Divider 12
2.1.1 Static Frequency Divider [6], [7] 12
2.1.2 Miller Frequency Divider [34], [35] 14
2.1.3 Injection-Locked Frequency Divider [36], [37] 17
2.2 35.7–64.2 GHz low power Miller Divider with Weak Inversion Mixer in 65 nm CMOS 21
2.2.1 Introduction of MMW Miller Divider 21
2.2.2 Circuit Design 22
2.2.2.1 Weak Inversion Biasing mixer 24
2.2.2.2 Bandwidth of Miller Divider with BPF 26
2.2.2.3 Proposed Miller Divider 28
2.2.3 Measurement Results 29
2.2.4 Discussion 33
2.3 W-band Injection-Locked Frequency Divider Using Split Transformer-Coupled Oscillator Technique 35
2.3.1 Introduction of MMW ILFD 35
2.3.2 Split Transformer-Coupled Oscillator 37
2.3.2.1 Oscillation Frequency 37
2.3.2.2 Oscillation Condition 40
2.3.3 Analysis of ILFD 44
2.3.3.1 Locking Range Analysis 44
2.3.3.2 Injection Transistor 52
2.3.4 Circuit Design 54
2.3.5 Measurement Results 59
2.4 Summary 66
Chapter 3 Millimeter-wave Phase Shifter Design 67
3.1 Introduction of Phased Array [52], [53] 67
3.2 Phased Array Architectures 68
3.3 Overview of Phase Shifter 71
3.3.1 Transmission Line Phase Shifter [16] 71
3.3.2 Reflection Type Phase Shifter [17] 72
3.3.3 Vector Sum Phase Shifter [21] 73
3.3.4 Switch Type Phase Shifter [25] 74
3.3.5 Injection-Locked Phase Shifter [30] 75
3.4 Four Bit RF Phase Shifter for 60-GHz RF Phased Array 76
3.4.1 Introduction 76
3.4.2 Architecture 77
3.4.3 Switch Type Phase Shifter 78
3.4.4 Quadrature Phase Rotator (QPR) 85
3.4.4.1 Vector Generator 86
3.4.4.2 Vector Selector 89
3.4.5 Measurement Results 93
3.5 Injection-Locked Phase Shifter for 60-GHz LO Phased Array 98
3.5.1 Introduction 98
3.5.2 Phase shift of ILPS 98
3.5.3 Circuit Design 100
3.5.4 Measurement Results 105
3.6 Summary 112
Chapter 4 Conclusion 113
References 115
Publication List 124
dc.language.isoen
dc.title毫米波除頻器及相移器之研究zh_TW
dc.titleResearch on Millimeter-Wave Frequency Dividers and Phase Shiftersen
dc.typeThesis
dc.date.schoolyear106-1
dc.description.degree博士
dc.contributor.oralexamcommittee黃天偉,呂良鴻,陳怡然,邱煥凱,盧信嘉
dc.subject.keyword互補式金氧半場效電金體,除頻器,變壓器,振盪器,注入鎖定,相移器,zh_TW
dc.subject.keywordCMOS,frequency divider,oscillator,phased array,phase shifter,en
dc.relation.page127
dc.identifier.doi10.6342/NTU201800502
dc.rights.note同意授權(全球公開)
dc.date.accepted2018-02-12
dc.contributor.author-college電機資訊學院zh_TW
dc.contributor.author-dept電信工程學研究所zh_TW
顯示於系所單位:電信工程學研究所

文件中的檔案:
檔案 大小格式 
ntu-107-1.pdf4.98 MBAdobe PDF檢視/開啟
顯示文件簡單紀錄


系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。

社群連結
聯絡資訊
10617臺北市大安區羅斯福路四段1號
No.1 Sec.4, Roosevelt Rd., Taipei, Taiwan, R.O.C. 106
Tel: (02)33662353
Email: ntuetds@ntu.edu.tw
意見箱
相關連結
館藏目錄
國內圖書館整合查詢 MetaCat
臺大學術典藏 NTU Scholars
臺大圖書館數位典藏館
本站聲明
© NTU Library All Rights Reserved