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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 黃定洧(Ding-Wei Huang) | |
dc.contributor.author | Chun-Yang Lin | en |
dc.contributor.author | 林羣洋 | zh_TW |
dc.date.accessioned | 2021-05-19T17:43:57Z | - |
dc.date.available | 2025-02-04 | |
dc.date.available | 2021-05-19T17:43:57Z | - |
dc.date.copyright | 2020-02-04 | |
dc.date.issued | 2020 | |
dc.date.submitted | 2020-02-03 | |
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/7451 | - |
dc.description.abstract | 本論文所追求的目標是一個模態切換器的尺寸小型化,為了達成這一目標,本研究將調制區塊與元件主要結構整合,在多模干涉結構的兩側進行折射率變化使得模態場型在多模干涉結構中產生偏移,在輸出端達成模態切換的效果,利用這樣的方法可以大幅減少元件的尺寸,在長度方面本論文的元件能夠將以往大於數百微米的模態切換器縮小到只需 38.4 微米,寬度方面則可以降到 3 微米的大小。
在數值模擬方面,本論文設計的是一個雙模態的切換器,針對輸入的 TE0 與 TE1 模態進行切換,為了能夠使元件能夠與半導體製程相符,絕緣上矽 (Silicon On Insulator, SOI) 被選為基板,然後使用商用光學模擬軟體 Lumerical 進行光場在元件中傳播特性的模擬,再配合數學軟體 MATLAB®對模擬所求得的結果進一步分析與匯出數據圖。 在結果的部分,本研究所設計的元件在 1550 奈米光源下,在串擾部分針對 TE0 達到 –15.3803 dB、對 TE1 達到 –17.8115 dB,插入損耗的部分針對 TE0 為 –2.9618 dB、對 TE1 是 –4.2519 dB,頻寬的部分在插入損耗不超過 -4 dB串擾低於 -15 dB的條件下為10 奈米 (1545 奈米 ~ 1555 奈米),若是與其他的模態切換器做比較,本文的整合型元件能夠將 2700 μm2的尺寸大小縮小到只有 115.2 μm2,也因此成功達成了本研究的元件小型化目標。 | zh_TW |
dc.description.abstract | The goal of this thesis is to minimize the size of a mode switch. To make this happen, the index modulated regions were applied within both side of the multimode interference region in this design. With this design, the length of the mode switch can be shrunk from hundreds of micrometers down to only 38.4 micrometers and the width can be reduced to 3 micrometers.
In this thesis, an SOI (Silicon On Insulator) wafer was used for this two-mode switch which can take advantage of CMOS technology. As for the simulations, the commercial software Lumerical was chosen to simulate the optical propagation in the device and the mathematic software MATLAB® was used to calculate the result of the simulations and generate the result figure for further analysis. The results of this work indicate that the crosstalk for the light signal at 1550 nm is –15.3803 dB and –17.8115 dB for TE0 and TE1, respectively. Meanwhile, the insertion loss is –2.9618 dB and –4.2519 dB for TE0 and TE1, respectively. The bandwidth for the insertion loss not exceeding –4 dB and the crosstalk under –15 dB is 10 nm (1545 nm – 1555 nm). Compared with other active mode switches, the design concept proposed in this thesis can reduce the device size from 2700 μm2 to 115.2 μm2. Thus, the goal for size minimization of the mode switch is successfully achieved in this thesis. | en |
dc.description.provenance | Made available in DSpace on 2021-05-19T17:43:57Z (GMT). No. of bitstreams: 1 ntu-109-R06941120-1.pdf: 5071126 bytes, checksum: 067da6bcf1c1f7851522de0466e79a2d (MD5) Previous issue date: 2020 | en |
dc.description.tableofcontents | 口試委員審定書 i
致謝 ii 摘要 iii Abstract iv 目錄 v 圖目錄 vii 表目錄 xi 第1章 序章 1 1-1 背景 1 1-2 研究動機 2 1-3 論文架構 3 第2章 基礎理論 4 2-1 馬克斯威爾方程式 (Maxwell’s Equations) 4 2-2 有限差分特徵模態法 (Finite Difference Eigenmode, FDE) 4 2-3 特徵模態展開法 (EigenMode Expansion, EME) 5 2-4 有限時域差分法 (Finite-Difference Time-Domain, FDTD) 6 2-5 粒子群最佳化 (Particle Swarm Optimization, PSO) 8 2-6 多模干涉 (Multimode Interference, MMI) 9 2-7 主動相位調制器 (Active Phase shifter) 12 第3章 文獻回顧 14 3-1 熱調控 MMI 單模切換器 14 3-2 三級 MMI 結構的雙模態切換器 17 3-3 模態多工器 21 第4章 雙模態切換器 23 4-1 元件設計方法 23 4-2 基本MMI 32 4-2-1 結構與結果 32 4-2-2 與三級 MMI 雙模切換器比較 34 4-2-3 頻譜響應 35 4-3 加入蝕刻的 MMI 36 4-3-1 結構與結果 37 4-3-2 與三級 MMI 雙模切換器比較 39 4-3-3 頻譜響應 39 第5章 製程容忍度分析 42 5-1 蝕刻區長度誤差分析 42 5-2 蝕刻區寬度誤差分析 44 5-3 輸入端位置誤差分析 45 5-4 輸出端位置誤差分析 47 5-5 調制區寬度誤差分析 49 5-6 調制區位置誤差分析 50 5-7 MMI 長度誤差分析 53 5-8 MMI寬度誤差分析 55 第6章 結論與未來展望 57 6-1 結論 57 6-2 未來展望 57 參考文獻 58 | |
dc.language.iso | zh-TW | |
dc.title | 基於簡單多模干涉結構的小型雙模態切換器 | zh_TW |
dc.title | A Small Two-Mode Switch Based On A Simple Multimode Interference Structure | en |
dc.type | Thesis | |
dc.date.schoolyear | 108-1 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 江衍偉(Yean-Woei Kiang),蕭惠心(Hui-Hsin Hsiao) | |
dc.subject.keyword | 多模干涉,模態切換器,絕緣上矽,折射率調制, | zh_TW |
dc.subject.keyword | multimode interference(MMI),mode switch,silicon on insulator(SOI),index modulate, | en |
dc.relation.page | 61 | |
dc.identifier.doi | 10.6342/NTU202000284 | |
dc.rights.note | 同意授權(全球公開) | |
dc.date.accepted | 2020-02-03 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
dc.date.embargo-lift | 2025-02-04 | - |
顯示於系所單位: | 光電工程學研究所 |
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