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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 陳耀銘(Yaow-Ming Chen) | |
dc.contributor.author | Zu-Bin Wong | en |
dc.contributor.author | 翁祖彬 | zh_TW |
dc.date.accessioned | 2021-06-17T08:15:07Z | - |
dc.date.available | 2020-08-20 | |
dc.date.copyright | 2019-08-20 | |
dc.date.issued | 2019 | |
dc.date.submitted | 2019-08-14 | |
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/73964 | - |
dc.description.abstract | 本論文提出並聯功率開關之不平衡導通暫態電流抑制。受氮化鎵功率開關之高切換速度與高功率密度等優勢所驅,本論文採用增強型氮化鎵高速電子遷移率場效電晶體(Enhancement-mode GaN HEMT)。不平衡導通暫態電流是由於並聯開關之間,其閘極驅動路徑、開關元件參數、電流路徑之不匹配所產生。較先導通的開關將承載電路整體電流,直到另一開關導通為止。由於整體電流極可能超出單一開關之額定值,導致電路故障或元件損毀。因此,本論文針對導通速度較慢的開關之閘-源極電壓,加入補償電壓以減少不平衡導通暫態電流。補償電壓由快速電流感測電路產生,此電路由異向磁阻感測器與高頻寬之運算放大器所組成。快速電流感測電路之輸出電壓與感測電流在奈秒的時間內,有著同步響應。本論文說明不平衡導通暫態電流抑制方法,並以電腦模擬驗證。最後實作一組兩個E-mode GaN HEMT並聯電路,以驗證本論文提出方法之正確性。 | zh_TW |
dc.description.abstract | In this thesis, a method to suppress the unbalanced turn-on transient currents of parallel-connected power switches is proposed. Motivated by the advantages of Gallium Nitride High Electron Mobility Transistor (GaN HEMT) in high-switching speed and high-power-density, enhancement mode GaN HEMT (E-mode GaN HEMT) is adopted. Unbalanced turn-on transient current is caused by the mismatching of gate drive loop, parameter variation of switching device, and asymmetrical of current path in parallel connected GaN HEMTs. The faster turn-on switch will draw the total current, until the other switch is on. Since the total current is likely to exceed the rating of a single switch, it can easily damage the power devices and cause the system failure. One method to solve the unbalanced turn-on switching current problem is by generating a compensated voltage to increase the gate-source voltage of the slower switch. The proposed compensated voltage is generated via a fast current sensing circuit, which is composed of an anisotropic magnetoresistive (AMR) sensor and a high bandwidth operational amplifier (op-amp). The output voltage of the current sensing circuit has a nanosecond-scale responses time to the sensed current. The operation principle of the proposed method will be explained and the computer simulations and hardware experimental results will be presented to verify the performance of the proposed method. | en |
dc.description.provenance | Made available in DSpace on 2021-06-17T08:15:07Z (GMT). No. of bitstreams: 1 ntu-108-R05921021-1.pdf: 3613312 bytes, checksum: 454de3960240e37ec56935148f39005b (MD5) Previous issue date: 2019 | en |
dc.description.tableofcontents | 口試委員會審定書 #
誌謝 i 中文摘要 ii ABSTRACT iii 目錄 iv 圖目錄 vi 表目錄 viii 第一章 緒論 1 1.1 研究背景與動機 1 1.2 文獻回顧 2 1.3 論文大綱 3 第二章 GaN HEMT優勢、分類、驅動電路與並聯電路介紹 5 2.1 GaN HEMT優勢 5 2.2 GaN HEMT分類 8 2.2.1 常導通型 8 2.2.2 常關閉型 9 2.3 E-mode GaN HEMT閘極驅動 13 2.3.1 閘極驅動器 13 2.3.2 閘極驅動電路設計 15 2.4 E-mode GaN HEMT並聯電路特性 17 第三章 不平衡導通暫態電流抑制方法與模擬驗證 20 3.1 不平衡導通暫態電流抑制方法 20 3.1.1 不平衡導通暫態電流 20 3.1.2 不平衡導通暫態電流抑制方法 22 3.2 電腦模擬驗證 26 3.2.1 模擬條件I 27 3.2.2 模擬條件II 30 第四章 硬體電路實作驗證 33 4.1 快速電流感測電路 33 4.1.1 異向磁阻感應器 33 4.1.2 脈衝電流測試 35 4.2 實作驗證 38 4.2.1 測試條件I 39 4.2.2 測試條件II 43 第五章 結論與未來發展 47 5.1 結論 47 5.2 未來發展 48 參考文獻 49 | |
dc.language.iso | zh-TW | |
dc.title | 並聯功率開關之不平衡導通暫態電流抑制 | zh_TW |
dc.title | Unbalanced Turn-on Transient Current Suppression for Parallel-Connected Power Switches | en |
dc.type | Thesis | |
dc.date.schoolyear | 107-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 陳景然(Ching-Jan Chen),唐丞譽(Cheng-Yu Tang) | |
dc.subject.keyword | 氮化鎵高速電子遷移率場效電晶體,閘極驅動,功率開關並聯,電流不平衡,磁阻效應,異向磁阻感測器, | zh_TW |
dc.subject.keyword | Gallium Nitride High Electron Mobility Transistor,gate drive,parallel-connected power switches,unbalanced current,magnetoresistance,anisotropic magnetoresistive sensor, | en |
dc.relation.page | 56 | |
dc.identifier.doi | 10.6342/NTU201903253 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2019-08-15 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電機工程學研究所 | zh_TW |
顯示於系所單位: | 電機工程學系 |
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