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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 黃定洧(Ding-Wei Huang) | |
| dc.contributor.author | Kuo-Fang Chung | en |
| dc.contributor.author | 鍾國方 | zh_TW |
| dc.date.accessioned | 2021-06-17T07:34:23Z | - |
| dc.date.available | 2029-04-26 | |
| dc.date.copyright | 2019-06-24 | |
| dc.date.issued | 2019 | |
| dc.date.submitted | 2019-05-16 | |
| dc.identifier.citation | 參考文獻
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/73429 | - |
| dc.description.abstract | 隨著近幾年來物聯網、大數據、及雲端計算的蓬勃發展，人們對數據傳輸的速度需求隨之驟增，數據中心 (Datacenter) 及其相關的傳輸能力 (Transmission Capacity) 顯得格外重要。幸運的是，擁有較大傳輸容量及較長傳輸距離的矽光子光互聯非常適合被使用在這些數據中心內與數據中心間的連結上，其利用相容於互補式金屬氧化物半導體 (Complementary Metal Oxide Semiconductor, CMOS) 之成熟的製程技術、低成本、及大量生產的優勢成為數據中心在中短程傳輸上的佼佼者。本篇論文旨在以相容於CMOS之製程技術為基礎、矽光子為背景領域，分析並最佳化光互聯數據發送端 (Transmitter) 中的矽基行波電光調制器 (Si-Based Traveling Wave Optical Modulator)。
本篇論文以IMEC的CMOS製程技術及規範為背景，在眾多不可變動參數的前題下分析多種可影響矽基側向型接面行波馬赫詹德電光調制器 (Si-Based Lateral Junction Traveling Wave Mach-Zehnder Modulator, Si-Based LATWMZM) 之參數、探討其對元件表現所帶來的對立影響、並提出考量射頻損耗之調制效率、插入損耗、及消光比與Lumerical MODE Solution, FDE Solver解出之模態電場數值解及P-N接面於逆偏情形下之一維近似閉合解進行重疊積分，搭配自定義之基因演算法優化當元件操作在光波段1310 nm之調制及射頻表現。在此以 的消光比為優化前題，探討並優化兩種不同射頻信號 命題下的3-dB調制頻寬。優化後之調制頻寬分別為56 GHz與67 GHz、調制效率分別為1.12 V-cm與1.26 V-cm，並以Lumerical Interconnect驗證得出眼圖之消光比大於9 dB。最後，本篇論文以均勻的製程誤差為假設前題並分析其造成的製程容忍度。在製程容忍度分析中，本篇論文參考IMEC提供的製程誤差 (一個標準差大約為7 nm)，分析結果顯示當製程誤差至多到達20 nm時，會分別造成電光3-dB調制頻寬約10 GHz及消光比最多約0.5 dB的誤差值。 | zh_TW |
| dc.description.abstract | With the bloom of big data, Internet of things, and cloud computing in recent years, the need for the speed of data transmission is increasing. Thus, datacenters and the related transmission capacity have become important. Fortunately, the silicon photonic optical interconnect featuring large transmission capacity and long transmission distance is very suitable for the inter- and intra- datacenter data transmission. Leveraging the advantages of mature fabrication technology, low cost, and mass production from the Complementary Metal Oxide Semiconductor (CMOS) manufacturing technology, the Silicon Photonics platform has become the leading option for the mid- and short- range transmission for the datacenters. Therefore, this thesis aims at the analysis and optimization of the Si-Based Traveling Wave Optical Modulator used in an optical interconnect transmitter based on the CMOS-compatible fabrication technology and the background realm of Silicon Photonics.
With the considerations of the CMOS fabrication technology and the mask rule from IMEC and with the assumption of multiple unchangeable parameters, the thesis analyzed various parameters affecting Si-Based Lateral Junction Traveling Wave Mach-Zehnder Modulator (Si-Based LATWMZM) and discussed various device performances with the use of the modified attenuation-considered figures of merit including modulation efficiency, insertion loss IL, and extinction ratio ER, as well as the overlap integration between the electric field extracted from FDE solver in Lumerical MODE Solution and the analytical carrier density approximation of the reversed-biased P-N junction. In addition, by using the user-defined genetic algorithm, the performance of the device operating at the optical wavelength 1310 nm was optimized. Also, the discussion and the E-O bandwidth optimization of the two different cases with radio-frequency peak-to-peak voltages 2.5 Vpp and 3.5 Vpp were made under the constraints of ER >= 5.5 dB and SEE11 <= -9 dB. The optimization results show that the E-O bandwidth and the modulation efficiency for 2.5 Vpp and 3.5 Vpp are (56 GHz, 1.12 V-cm) and (67 GHz, 1.26 V-cm) respectively. After the optimization, the validations of eye diagrams both with ER > 9 dB were simulated by Lumerical Interconnect. In the last part, the thesis analyzed the tolerance of the device to the fabrication error. The results showed that the possible reductions of BW and ER are about 10 GHz and 0.5 dB respectively for a uniform fabrication error of 20 nm. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-17T07:34:23Z (GMT). No. of bitstreams: 1 ntu-108-R04941128-1.pdf: 8173645 bytes, checksum: 3785aa534ce24c84a9625221922d45f2 (MD5) Previous issue date: 2019 | en |
| dc.description.tableofcontents | 目錄
口試委員會審定書 i 中文摘要 ii 英文摘要 iii 致謝 iv 目錄 v 圖目錄 ix 表目錄 xv 第1章 導論 1 1.1 研究背景 1 1.2 矽光子 (Silicon Photonics) 3 1.3 光調制器 (Optical Modulators) 4 1.4 研究動機 4 1.5 論文架構 7 第2章 背景理論及數值方法 8 2.1 基礎理論 8 2.1.1 馬克斯威爾方程式 (Maxwell’s Equations) 8 2.1.2 波動方程式 (Wave Equations) 9 2.1.3 模態場 (Mode Field)、等效折射率 (Effective Refractive Index)、與群指數 (Group Index) 10 2.1.4 漂移擴散模型 (Drift-Diffusion Model, DD Model) 12 2.1.5 載子於矽中的反應時間 (Response Time) 13 2.1.6 P-N接面的逆偏一維近似解析公式 15 2.1.7 德魯德-勞倫茲公式 (Drude-Lorentz Equations) 及自由載子電漿色散效應 (Free-Carrier Plasma Dispersion, FCPD, Effect) 16 2.1.8 矽中的載子誘發效應 (Carrier-Induced Effect) 17 2.1.9 傳輸線 (Transmission Line) 的等效模型 (RLGC model) 18 2.1.10 共面波導 (Coplanar Waveguide) 的保角轉換 (Conformal Mapping) 及部分電容法 (Partial Capacitance Approach) 21 2.1.11 P-N接面電容之邊緣效應 (Fringing Effect) 27 2.1.12 相移二極體 (Phase Shifter Diode, PSD) 之等效並聯電阻 29 2.1.13 基於共面波導之行波調制器 (Traveling Wave Modulator, TWM) 的傳輸線等效模型 30 2.1.14 馬赫詹德干涉儀 (Mach-Zehnder Interferometer, MZI) 31 2.1.15 行波電光調制器的電光調制頻率響應 (E-O Modulation Frequency Response) 33 2.1.16 調制器的效能指數 (Figure of Merit, FoM) 35 A. 調制效率 (Modulation Efficiency) 35 B. 插入損耗 (Insertion Loss) IL 35 C. 消光比 (Extinction Ratio) ER 35 D. 調制頻寬 (Modulation Bandwidth) 或 BW 36 2.2 數值方法 36 2.2.1 載子傳輸求解器 (Charge Transport Solver) 36 A. 漂移-擴散方程式 (Drift-Diffusion Equation) 36 B. 泊松方程式 (Poisson’s Equation) 37 C. 電荷守恆 (Charge Conservation) 37 2.2.2 適用於非線性命題之牛頓法 (Newton’s Method) 37 2.2.3 有限元素特徵模態法 (Finite Element Eigenmode Method, FEEM) 38 2.2.4 有限差分特徵模態 (Finite Difference Eigenmode, FDE)求解器 38 2.2.5 基因演算法 (Genetic Algorithm, GA) 39 2.3 本研究所用之模擬軟體及其用途 40 第3章 文獻回顧 41 3.1 逆偏P-N接面摻雜位置或形狀之文獻探討 41 3.1.1 側向型接面 (Lateral Junction) 41 3.1.2 指叉型接面 (Interleaved/Interdigitated Junction) 42 3.1.3 其他形狀接面 42 3.2 不同的光訊號調制機制之文獻探討 43 3.2.1 共振腔 (Resonator) 43 3.2.2 光干涉 (Interferometer) 43 3.3 不同的射頻波導結構之文獻探討 44 3.3.1 共面微帶線 (Coplanar Stripline, CPS) 44 3.3.2 共面波導 (Coplanar Waveguide, CPW) 45 3.3.3 無基板 (Substrate-Free) 之共面結構 46 3.3.4 慢波 (Slow Wave) 式電極結構 47 第4章 矽基馬赫詹德共面波導側向接面型行波電光調制器的分析與優化 49 4.1 矽基馬赫詹德共面波導側向接面型行波電光調制器 49 4.1.1 穩態表現 (Steady-State Performance) 50 4.1.2 射頻表現 (RF Performance) 58 4.2 LA (Lateral-Junction based) TWMZM的影響因素 61 4.2.1 摻雜之濃度與位置 61 A. 接面電容值 (Junction Capacitance) 61 B. 接面位移 (Junction Offset) 61 C. FCPD效應引起之材料折射率變化分佈 62 D. FCPD效應引起之額外損耗分佈 63 4.2.2 脊型波導 (Rib Waveguide) 64 A. 可傳播之光波導模態數 64 B. 光波導模態之場形 64 C. PSD之調制效率 65 D. PSD之光損耗 65 E. TWMZM之射頻表現 66 4.2.3 共面波導 67 A. RLGC Model 67 B. 特徵阻抗 68 C. 複數之傳播常數 68 D. S參數之頻率響應圖 69 4.2.4 外加偏壓 70 A. 直流逆偏壓 70 B. 小信號峰對峰電壓 (Peak to Peak Voltage, ) 70 4.2.5 主動區長度 70 A. 射頻損耗 70 B. 消光比與插入損耗 70 4.3 本篇論文之最佳化流程 74 4.3.1 光波導之數值解萃取 74 4.3.2 適應函數 (Fitness Function) 75 A. 射頻表現 75 B. 考量射頻損耗下的調制效率、插入損耗、及消光比 75 4.3.3 利用基因演算法優化元件適應函數 76 A. TWMZMOTE1 ( ) 78 B. TWMZMOTE2 ( ) 81 4.3.4 商用軟體Lumerical Interconnect驗證 85 A. MZMOTE_TWLABT_380_1500 85 B. TWMZMOTE1 87 C. TWMZMOTE2 89 4.3.5 製程容忍度分析 91 A. TWMZMOTE1 91 B. TWMZMOTE2 93 第5章 結語及未來展望 95 5.1 結語 95 5.2 未來展望 95 參考文獻 97 | |
| dc.language.iso | zh-TW | |
| dc.title | 利用基因演算法優化矽基側向型接面馬赫詹德行波電光調制器之頻寬 | zh_TW |
| dc.title | Optimization of bandwidth of Si-Based Lateral Junction Traveling Wave Mach-Zehnder Modulator by using Genetic Algorithm | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 107-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 張書維(Shu-Wei Chang),林銘偉(Ming-Wei Lin),傅柏翰(Po-Han Fu) | |
| dc.subject.keyword | 數據中心,光互聯,光互聯模組,發送端,矽光子,調制,調制器,光調制器,矽基光調制器,行波電光調制器,調制頻寬,基因演算法, | zh_TW |
| dc.subject.keyword | datacenter,optical interconnect,optical interconnect module,transmitter,silicon photonics,modulation,modulator,optical modulator,Si-based modulator,traveling wave modulator,modulation bandwidth,genetic algorithm, | en |
| dc.relation.page | 104 | |
| dc.identifier.doi | 10.6342/NTU201900765 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2019-05-16 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
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