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標題: | 適用於氮化鎵同步整流降壓型轉換器之具有動態空白時間控制之閘極驅動積體電路 A Gate Driver IC with Adaptive Dead-Time Control for GaN-Based Synchronous Buck Converter |
作者: | Ping-Kun Chiu 邱炳堃 |
指導教授: | 陳景然(Ching-Jan Chen) |
關鍵字: | 同步整流降壓型電源轉換器,可調變空白時間控制,位準轉換器,氮化鎵,驅動電路, synchronous buck converter,adaptive dead-time,level shifter,GaN,Gate driver,switching loss, |
出版年 : | 2020 |
學位: | 碩士 |
摘要: | 近年來,高切換頻率之降壓型轉換器快速的在電力電子領域中崛起。高切換頻率轉換器可以減少被動元件的體積來達到更高的功率密度。相比於傳統的矽元件,氮化鎵元件擁有高崩潰電壓、低總閘級電荷與低導通電阻等特性使得氮化鎵元件更適合高切換頻率的應用,然而氮化鎵元件應用在傳統降壓型轉換器存在一些挑戰。本論文提出一適合增強型氮化鎵電晶體的閘極驅動積體電路,並且實現一1MHz,輸入電壓12V,輸出電壓1V且輸出電流2A功率2W的降壓型轉換器。論文提出一高度數位化可調變空白時間控制去減少在空白時間所產生的逆向導通損失,延遲重置電路是在重載轉換到輕載時,將延遲單位重置到最長的延遲單位用來避免擊穿電流的發生,上述的電路使用台積電0.18μm BCD製程實現包含自舉式電容,晶片面積為1.5毫米平方。經量測結果,在輕載時最短空白時間可以減少到800 ps,在重載時最短空白時間可以減少到700 ps,相比於固定空白時間使用此方法可以增進2.1%的效率。 In recent years, high switching frequency buck converters has risen rapidly in the field of power electronics. The converter operates in high switching frequency can reduce the size of passive components to get the high-power density. Comparing to traditional silicon devices, due to GaN devices have some advantages like high breakdown voltage, low Qg and low rds_on, GaN devices are more appropriate for high switching frequency. However, there are some challenges in GaN device application in traditional buck converter. This thesis proposed a gate driver IC for enhancement-mode GaN devices and implemented a 12V-to-1V buck converter with 1MHz switching frequency. This thesis proposed a highly digitally adaptive dead-time control to reduce the reverse conduction loss in dead-time region. A delay cell reset circuit is proposed to reset the delay cell to the longest delay cell that prevent the shoot-through from heavy load to light load. The gate driver IC was fabricated in a 0.18 μm TSMC Bipolar-CMOS-DMOS process. The chip area is 1.5 mm2 with integrated bootstrap capacitor. Measurement results verified the proposed control. From the measurement result, the minimum dead-time is 800ps in light load and the minimum dead-time is700ps in heavy load. The efficiency can improve 2.1% at heavy load load compared to 10ns fixed dead-time counterpart. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/73127 |
DOI: | 10.6342/NTU202004454 |
全文授權: | 有償授權 |
顯示於系所單位: | 電子工程學研究所 |
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U0001-2412202013062900.pdf 目前未授權公開取用 | 7.43 MB | Adobe PDF |
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