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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 彭隆瀚(Lung-Han Peng) | |
dc.contributor.author | Bo-Yong Huang | en |
dc.contributor.author | 黃柏詠 | zh_TW |
dc.date.accessioned | 2021-06-17T07:17:40Z | - |
dc.date.available | 2021-04-07 | |
dc.date.copyright | 2021-04-07 | |
dc.date.issued | 2021 | |
dc.date.submitted | 2021-03-08 | |
dc.identifier.citation | http://www.lightemittingdiodes.org/ http://www.nichia.co.jp/en/about_nichia/index.html Audrius Alkauskas, Matthew D. McCluskey, and Chris G. Van de Walle,“Tutorial: Defects in semiconductors—Combining experiment and theory,”J. Appl. Phys. 119, 181101 (2016). http://finance.people.com.cn/BIG5/n/2012/1022/c349966-19346794.html P. C. Wang et al., “Bias tuning charge-releasing leading to negative differential resistance in amor-phous gallium oxide/Nb:SrTiO3 heterostructure,”Appl. Phys. Lett. 107, 262110 (2015). 謝永龍, “氮化鎵面射型發光元件的製造與光學特性”, 國立交通大學光電工程學研究所碩士論文(2004). R. L. Puurunen, “Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process,”J. Appl. Phys. 97, 121301 (2005). John T.S. Irvine,Hiroyasu Iwahara , “Solid State Ionics,” Volume 178, Issues 7–10, April 2007, Page 459. 李柏廷, “電漿輔助型原子層沉積之發光二極體特性研究”, 國立台灣大學光電工程學研究所碩士論文(2014). S. B. S. Heil, “ Plasma-assisted atomic layer deposition of metal oxides and nitrides,” Technische Universiteit Eindhoven(2008). http://mems.mt.ntnu.edu.tw/document/%E6%BF%BA%E9%8D%8D%E6%8A%80%E8%A1%93.pdf http://rportal.lib.ntnu.edu.tw/bitstream/20.500.12235/98461/2/003902.pdf https://highscope.ch.ntu.edu.tw/wordpress/?p=41141 Q. Feng et al., “The properties of gallium oxide thin film grown by pulsed laser deposition,”Applied Surface Science 359 (2015) 847–852 . X. Hou et al., “Review of polymorphous Ga2O3 materials and their solar-blind photodetector applications,” J. Phys. D: Appl. Phys. 54 (2021) 043001. S. Geller, “Crystal Structure of β‐Ga2O3,” J. Chem. Phys. 33, 676 (1960). https://kknews.cc/zh-tw/news/bak8j36.html Jolm F. Moulder et al., “Handbook of X-ray Photoelectron Spectroscopy,” (Physical Electronics Division, Perkin-Elmer Corporation, 1992, Page 90-91). A. Herrera-Gomez et al., “Practical methods for background subtraction in photoemission spectra,“ Surf. Interface Anal. 2014, 46, 897–905. Alexander G. Shard, “Practical guides for x-ray photoelectron spectroscopy: Quantitative XPS,” J. Vac. Sci. Technol. A 38, 041201 (2020). https://zh.wikipedia.org/wiki/%E9%80%8F%E5%B0%84%E7%94%B5%E5%AD%90%E6%98%BE%E5%BE%AE%E9%95%9C#/media/File:Scheme_TEM_en.svg https://www.gatan.com/products/tem-analysis/gatan-microscopy-suite-software https://www.gatan.com/sites/default/files/images/scripts/Live-View_Radial_FFT_Profile.py https://www.gatan.com/sites/default/files/images/scripts/IS_Dataset_Radial_FFT_Profile.py M. Thirumoorthi, J. Thomas Joseph Prakash, “Structure, optical and electrical properties of indium tin oxide ultra thin films prepared by jet nebulizer spray pyrolysis technique,” Journal of Asian Ceramic Societies, Volume 4, Issue 1, 2016, Pages 124-132 https://web.phys.ntu.edu.tw/asc/FunPhysExp/ModernPhys/exp/Microsoft%20Word%20-%20temperature-dependent%20resistance%20of%20metal%20and%20semiconductor.pdf | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/73104 | - |
dc.description.abstract | 本論文主要探討射頻濺鍍系統製作氧化鎵/多晶矽發光二極體元件與特性量測。內容分為兩部分,第一部分為介紹射頻濺鍍系統原理,第二部分為氧化鎵/多晶矽發光二極體元件材料分析,第三部分為氧化鎵/多晶矽發光二極體元件製作與電性和光學量測。 首先,本文敘述利用射頻濺鍍系統成長氧化鎵,並且使用α-step、XPS、XRD等量測技術,分析氧化鎵之成分。從XRD結果得知在29.5°有(400)晶格方向,而在61.5°有(-603)晶格方向,與β-Ga2O3的晶格方向相似,而由XPS材料分析得知氧化鎵/多晶矽介面結構之能帶位置。 吾人以射頻濺鍍系統進行發光二極體之製作,並量測其電壓-電流特性、電致發光頻譜。利用射頻濺鍍系統製作三種不同堆疊結構之發光二極體,並分析及比較其特性,結果顯示,在吾人增添電子穿隧層的元件中,其發光強度由原先200 counts上升至1000 counts,且同電壓下電流也由原本5V/50mA下降至5V/5mA。且輻射光譜擁有紅綠藍三色光可應用,能使得自發光二極體未來發展更有可看性。 | zh_TW |
dc.description.abstract | This thesis mainly discusses the fabrication and characterization of gallium oxide/polysilicon light-emitting diode prepared by using a Radio Frequency sputtering system. The content is divided into two parts. The first part is to introduce the principle of the Radio Frequency sputtering system. The second part is the analysis of the gallium oxide/polysilicon light-emitting diode material properties and structures. The third part is the fabrication and characterization of the gallium oxide/polysilicon light-emitting diodes. This thesis describes the use of a Radio Frequency sputtering system to deposit gallium oxide, and the use of α-step, X-ray photoelectron spectroscopy, X-ray diffraction and other measurement techniques to analyze the material composition of gallium oxide. From the XRD results, it is known that there is a peak aligned to corresponding to (400) lattice plane at 2θ=29.5° and another XRD peak due to (-603) lattice plane at 2θ=61.5°, which is similar to the lattice direction of β-Ga2O3. The XPS material analysis shows that gallium oxide/polysilicon energy band position of the interface structure. We use a Radio Frequency sputtering system to fabricate light-emitting diodes, and measure their voltage-current characteristics and electroluminescence spectra. The Radio Frequency sputtering system was used to fabricate three different stacked structures of light-emitting diodes, and their characteristics were analyzed and compared. The results showed that the luminous intensity of the device with an electron tunneling layer increased from 200 counts to 1000 counts. Under the same bias voltage, at 5 volts device driving the current also drops from 50mA to 5mA. In addition, the emission was found to have red, green and blue spectral peaks, which make themselves a self-luminous white light diodes more expectability. | en |
dc.description.provenance | Made available in DSpace on 2021-06-17T07:17:40Z (GMT). No. of bitstreams: 1 U0001-2502202116374200.pdf: 7102788 bytes, checksum: d45466247cb1ae0bc4e494ba8f174e79 (MD5) Previous issue date: 2021 | en |
dc.description.tableofcontents | 目錄 摘要 I Abstract II Chapter 1 緒論 1 1.1 簡介 1 1.2 研究動機與目的 3 1.3 論文內容概述 5 Chapter 2 白光二極體及二極記憶體元件之原理 7 2.1 白光二極體的發光原理 7 2.2 二極記憶體的操作原理 9 2.3 Fabry-Perot Cavity 理論 12 Chapter 3 原子層沉積系統 15 3.1 ALD技術發展沿革 16 3.2 ALD成長機制簡介 18 3.3 ALD成長模式概述 21 3.3.1 Thermal ALD 22 3.3.2 Radical enhanced ALD 23 3.3.3 Direct plasma ALD 24 3.3.4 Remote plasma ALD 25 3.4 原子層沉積系統之材料測試及分析 26 3.5 PE-ALD之機台測試及材料參數設定 27 3.6 PE-ALD之材料測試及分析 32 3.6.1 氧化物材料測試與分析 33 Chapter 4 射頻濺鍍技術 38 Chapter 5 射頻濺鍍沉積系統之發光二極體 45 5.1 射頻濺鍍沉積系統之發光二極體設計概念 45 5.2 射頻濺鍍沉積Ga2O3之材料分析 47 5.2.1 X-射線繞射分析(X-ray Diffraction, XRD) 47 5.2.2 X射線光電子能譜分析(X-ray photoelectron spectroscopy, XPS) 50 5.2.3 穿透式電子顯微鏡(Transmission electron microscope, TEM) 能量散射X射線譜(Energy-dispersive X-ray spectroscopy,EDS) 60 5.3 射頻濺鍍沉積系統之發光二極體元件製作 84 5.4 原子層沉積系統之發光二極體量測架構 90 5.4.1 奈秒級脈衝光譜量測系統 91 5.4.2 電流電壓量測系統 93 5.5 射頻濺鍍之Ga2O3發光二極體特性分析 94 5.5.1 射頻濺鍍之多重結構發光二極體電性分析 97 5.5.2 射頻濺鍍之多重結構發光二極體光性分析 101 5.5.3 射頻濺鍍之多重結構發光二極體特性討論 105 Chapter 6 結論與展望 107 附錄 109 1. Shirley method Matlab code 109 參考文獻 111 | |
dc.language.iso | zh-TW | |
dc.title | 射頻濺鍍氧化鎵在多晶矽基板上之發光二極體特性研究 | zh_TW |
dc.title | Characterization of GaOx Light Emitting Diodes Fabricated on Poly-Si substrates by RF-Sputtering | en |
dc.type | Thesis | |
dc.date.schoolyear | 109-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 毛明華(Ming-Hua Mao),李峻霣(Jiun-Yun Li),黃玉林(Yue-Lin Huang) | |
dc.subject.keyword | 氧化鎵,發光二極體, | zh_TW |
dc.subject.keyword | Gallium Oxide,Light Emitting Diode, | en |
dc.relation.page | 112 | |
dc.identifier.doi | 10.6342/NTU202100756 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2021-03-08 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
顯示於系所單位: | 光電工程學研究所 |
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