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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 林浩雄 | |
dc.contributor.author | Xinyou Liu | en |
dc.contributor.author | 劉心佑 | zh_TW |
dc.date.accessioned | 2021-06-17T07:17:04Z | - |
dc.date.available | 2022-07-15 | |
dc.date.copyright | 2019-07-15 | |
dc.date.issued | 2019 | |
dc.date.submitted | 2019-07-12 | |
dc.identifier.citation | [1] S. Lee, J. Ham, K. Jeon, J. S. Noh, and W. Lee, “Direct observation of the semimetal-to-semiconductor transition of individual single-crystal bismuth nanowires grown by on-film formation of nanowires,” Nanotechnology, Vol. 21, pp. 405701, 2010.
[2] Zhu, Kai, et al. 'Quantum transport in the surface states of epitaxial Bi (111) thin films.' Physical Review B 94.12 (2016): 121401. [3] Hirahara, T., & Hasegawa, S. (2018). Comment on “Quantum transport in the surface states of epitaxial Bi (111) thin films”. Physical Review B, 97(20), 207401. [4] Hofmann, P. (2006).The surfaces of bismuth: Structural and electronic properties. Progress in surface science, 81(5), 191-245. [5] Jona, F. 'Low-energy electron diffraction study of surfaces of antimony and bismuth.' Surface Science8.1-2 (1967): 57-76 [6] Yaginuma, S., et al. 'Origin of flat morphology and high crystallinity of ultrathin bismuth films.' Surface Science601.17 (2007): 3593-3600. [7] Liang, N. T., Shan, Y., & Wang, S. Y. (1976). Electronic conductivity and percolation theory in aggregated films. Physical Review Letters, 37(9), 526. [8] Kirkpatrick, S. (1973). Percolation and conduction. Reviews of modern physics, 45(4), 574. [9] Song, Y., Dhar, S., Feldman, L. C., Chung, G., & Williams, J. R. (2004). Modified Deal Grove model for the thermal oxidation of silicon carbide. Journal of Applied Physics, 95(9), 4953-4957. [10] Toudert, Johann, et al. 'Optical Properties of Bismuth Nanostructures Towards the Ultrathin Film Regime.' arXiv preprint arXiv:1904.07951 (2019). [11] Heremans, J., Thrush, C. M., Lin, Y. M., Cronin, S., Zhang, Z., Dresselhaus, M. S., & Mansfield, J. F. (2000). Bismuth nanowire arrays: Synthesis and galvanomagnetic properties. Physical Review B, 61(4), 2921. [12] Kröger, P., Abdelbarey, D., Siemens, M., Lükermann, D., Sologub, S., Pfnür, H., & Tegenkamp, C. (2018). Controlling conductivity by quantum well states in ultrathin Bi (111) films. Physical Review B, 97(4), 045403. [13] Shim, Wooyoung, et al. 'On-film formation of Bi nanowires with extraordinary electron mobility.' Nano letters 9.1 (2008): 18-22. [14] Ahmad Ayesh, PhD thesis, Device fabrication using Bi nanoclusters (Physics and Astronomy Department, University of Canterbury, Christchurch, 2007) [15] M. Sze, “Physics of semiconductor devices ,” pp.248. [16] V. Sandomirsky, Sov. Phys. JETP 25, 101 (1967) [17] Levin, A. J., Black, M. R., & Dresselhaus, M. S. (2009). Indirect L to T point optical transition in bismuth nanowires. Physical Review B, 79(16), 165117. [18] Wilson, Alan Herries. Semi-conductors & Metals: An Introduction to the Electron Theory of Metals. CUP Archive, 1939. [19] Late, Dattatray J., et al. 'Rapid characterization of ultrathin layers of chalcogenides on SiO2/Si substrates.' Advanced Functional Materials 22.9 (2012): 1894-1905. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/73090 | - |
dc.description.abstract | 本論文利用分子束磊晶技術(MBE System)將鉍(Bi)薄膜成長於重摻雜、輕摻雜矽基板、二氧化矽/矽(SiO2/Si)基板以及使用原子層沉積的氧化鋁四種基板上,利用四種不同方法減薄鉍薄膜的厚度,並用高解析X射線繞射儀(HRXRD)、X射反射儀(XRR)、穿透式電子顯微鏡(TEM)、掃描式電子顯微鏡(SEM)、原子力顯微鏡(AFM)進行量測與分析。
我們發現以125倍水稀釋過後的稀硫酸可以較慢蝕刻鉍薄膜,初步研究了該溶液蝕刻鉍薄膜的機理,即會在晶界處較快蝕刻,因此較長蝕刻時間會帶來島狀形貌,使得遵循滲透理論(percolation theory)。 另外,我們首次應用紫外光臭氧氧化于減薄鉍薄膜厚度,我們找到了較適合的氧化溫度。氧化時間為一小時,高於120°c時,鉍就完全被氧化。我們發現在該條件下的氧化產物是氧化鉍以及氧化亞鉍。氧化過程中的鉍薄膜片電阻值呈現三個階段最終在固定溫度下達到飽和。同時,鉍的縱向側向氧化各向異性也與其結構特性相符。 接著我們研究了長在氧化層上鉍的性質,並利用等離子蝕刻(RIE)減薄其厚度,發現隨之出現的電場調控效應(Electric field effect)。該電晶體展現出電子導電的性質,初步計算出其遷移率最高可達486cm^2/(Vs)。 最後我們利用機械剝離法成功在300nm二氧化矽基板上撕出小於100nm的鉍薄膜通過TEM以及電子背向散射(EBSD)技術我們分析出垂直於基板的方向為(003)或(012),我們還做出了在該基板上不同厚度鉍薄膜對應顏色的理論值。 | zh_TW |
dc.description.abstract | In this thesis, the bismuth (Bi) film is grown on heavily doped, lightly doped Silicon dioxide substrate, Silicon dioxide/ Silicon (SiO2/Si) substrate and ALD-grown aluminum oxide substrate by molecular beam epitaxy (MBE System). The thickness of the bismuth film is reduced by four different methods, and high-resolution X-ray diffraction (HRXRD), X-ray reflectometer (XRR), transmission electron microscope (TEM), scanning electron microscope (SEM), atomic force microscopy (AFM) is applied for measurement and material analysis during those reduction. Also, the electrical properties were checked.
We found that sulfuric acid diluted with 125 times water can etch the bismuth film slowly. The mechanism of etching the bismuth film is preliminarily studied, that is, it will be etched faster at the grain boundary, so the longer etching time will bring island shape. And the conductivity followed the percolation theory. In addition, for the first time we applied UV-Ozone oxidation to reduce the thickness of the bismuth film and we found a suitable oxidation temperature. When the oxidation time is one hour, above 120°C, the bismuth is completely oxidized. We have found that the oxidation products under this condition are bismuth oxide and bismuth suboxide. The sheet resistance of the bismuth film during the oxidation process appears in three stages and eventually reaches saturation at a fixed temperature. At the same time, the longitudinal lateral oxidation anisotropy of bismuth is also consistent with its structural characteristics. Next, we studied the properties of bismuth thin film grown on the oxide layer and thinned its thickness by plasma etching (RIE) to investigate the electric field effect of it. The transistor exhibits the property of electronic conduction (N-channel FET), and a highest mobility of 486 cm^2/(Vs). Finally, we successfully used the mechanical exfoliation method to obtain a bismuth film of less than 100 nm on a 300 nm SiO2 substrate by Nitto tape. Using TEM and electron backscatter (EBSD) technics, we analyzed the direction perpendicular to the substrate follows (003) or (012). We also made theoretical values for the corresponding colors of the different thickness of the film on the substrate. | en |
dc.description.provenance | Made available in DSpace on 2021-06-17T07:17:04Z (GMT). No. of bitstreams: 1 ntu-108-R06943163-1.pdf: 4062978 bytes, checksum: 68f684be658b849d87a55e36f07d5936 (MD5) Previous issue date: 2019 | en |
dc.description.tableofcontents | 目錄
中文摘要 I Abstract II 目錄 IV 圖目錄 VII 表目錄 XI 第一章 導論 1 1-1研究動機 1 1-2 論文架構 2 第二章 鉍的結構 4 第三章 實驗 6 3-1實驗方法 6 3-1-1 鉍薄膜之成長流程 6 3-1-2 鉍薄膜的XRD量測 7 3-1-3電性量測制程 9 3-2 實驗儀器 11 3-2-1 原子力顯微鏡 11 3-2-2 穿透式電子顯微鏡 11 3-2-3 電子背向散射繞射技術 12 第四章 鉍薄膜之濕蝕刻 13 4-1 鉍薄膜濕蝕刻的原理 13 4-2 實驗設置 13 4-3 蝕刻後的電子背向散射 15 4-4 蝕刻坑 17 4-5 蝕刻過後的電性分析 19 4-6 滲透理論 26 第五章 鉍薄膜的臭氧氧化分析 29 5-1 臭氧氧化原理 29 5-2 實驗部分 30 5-3臭氧過後的圓形傳輸線分析 35 5-4臭氧氧化的各向异性 43 5-5氧化前後的變溫電性 44 第六章 氧化層上的鉍薄膜性質 47 6-1 半金屬的電場效應 47 6-2 氧化物絕緣層的性質 48 6-3 長在氧化物上鉍的材料分析 50 6-4 電學特性 53 第七章 鉍的機械剝離法 66 7-1 鉍的機械剝離以及顏色 66 7-2 材料分析 68 第八章 結論 70 參考文獻 72 | |
dc.language.iso | zh-TW | |
dc.title | 鉍薄膜在多種減薄方法下的性質改變——形貌,晶格以及電學特性 | zh_TW |
dc.title | Modulation of the characteristics of Bismuth thin films by a variety of thin down methods——morphology, crystalline and electrical properties | en |
dc.type | Thesis | |
dc.date.schoolyear | 107-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 毛明華,陳建宏,王智祥,張書維 | |
dc.subject.keyword | 鉍,反應式離子蝕,化學蝕刻,半金屬,臭氧氧化,機械剝離, | zh_TW |
dc.subject.keyword | Bismuth,reactive ion etching (RIE),wet etching,semimetal,UV-Ozone oxidation,mechanical exfoliation, | en |
dc.relation.page | 73 | |
dc.identifier.doi | 10.6342/NTU201901393 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2019-07-12 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
顯示於系所單位: | 電子工程學研究所 |
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