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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 賴育英(Yu-Ying Lai) | |
| dc.contributor.author | Chun-Wei Pai | en |
| dc.contributor.author | 白峻維 | zh_TW |
| dc.date.accessioned | 2021-05-19T17:40:58Z | - |
| dc.date.available | 2021-08-05 | |
| dc.date.available | 2021-05-19T17:40:58Z | - |
| dc.date.copyright | 2019-08-05 | |
| dc.date.issued | 2019 | |
| dc.date.submitted | 2019-07-26 | |
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J., Importance of Electron Transport Ability in Naphthalene Diimide-Based Polymer Acceptors for High-Performance, Additive-Free, All-Polymer Solar Cells. Chemistry of Materials 2015, 27 (15), 5230-5237. 35. Kuila, T.; Acharya, H.; Srivastava, S. K.; Samantaray, B. K.; Kureti, S., Enhancing the ionic conductivity of PEO based plasticized composite polymer electrolyte by LaMnO3 nanofiller. Materials Science and Engineering: B 2007, 137 (1), 217-224. 36. Mark, J. E., Physical Properties of Polymers Handbook. Springer Science+Business Media, LLC: New York, NY, 2007. 37. Thin solid films (Online). Thin solid films (Online) 1967. 38. Lock, E.; Walton, S.; Fernsler, R., Preparation of Ultra Thin Polystyrene,Polypropylene and Polyethylene Films on Si Substrate Using Spin Coating Technology. Naval Research Laboratory 2008. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/7284 | - |
| dc.description.abstract | 本研究合成出共軛高分子P(NDI2OD-T2)並分別以不同比例與三種非共軛高分子進行混摻，分別為 poly(ethylene oxide) (PEO)、atactic polypropylene (aPP)和isotactic polypropylene (iPP)，並對共軛高分子的薄膜形貌及電子遷移率進行分析與討論。研究發現在 lamellar stacking（h00）、π-stacking（0k0）和 polymer backbone（00l）三個方向上的相干長度（coherence length）可以通過共軛高分子和非共軛高分子不同的混摻比例進行調節。在不同的混摻比例下，共軛高分子聚集的程度會有所不同，造成 P(NDI2OD-T2)結晶區的相干長度有所變化。原子力顯微鏡指出 PEO40 及 aPP5 展現出明顯的纖維狀結構，代表 P(NDI2OD-T2)聚集的發生，儘管在低比例下 P(NDI2OD-T2)仍然能夠維持著相互的連結。另一方面也因為薄膜形貌上的不同導致有機場效電晶體所量測出的電子遷移率上的差異，其中PEO40（0.133 cm2 V-1 s-1）及aPP5（0.127 cm2 V-1 s-1）展現出和單一P(NDI2OD-T2)（0.106 cm2 V-1 s-1）相當的電子遷移率，表明共軛高分子混摻非共軛高分子能夠有效的降低共軛高分子在元件中的使用比例並且維持和單一共軛高分子相同的載子遷移率，由此藉由迴歸相關性的分析建立了 P(NDI2OD-T2)聚集程度與電子遷移率之間的關係，發現在π-stacking 方向的聚集程度對於電子遷移率有較大的影響，為未來共軛高分子混摻非共軛高分子的系統提出了一個設計方向。 | zh_TW |
| dc.description.abstract | P(NDI2OD-T2) was synthesized and blended respectively with non-conjugated polymers including poly(ethylene oxide) (PEO), atactic polypropylene (aPP), and isotactic polypropylene (iPP). It was found that the coherence lengths of the lamellar stacking, π-stacking, and polymer backbone can be regulated by the blending proportion of PEO, aPP, or iPP, resulting in the disparity in the thin-film morphology and the electron mobility. Organic field-effect transistor revealed that PEO40 (0.133 cm2 V-1 s-1) and aPP5 (0.127 cm2 V-1 s-1) exhibited electron mobility analogous to P(NDI2OD-T2) (0.106 cm2 V-1 s-1), stressing that the electron mobility of P(NDI2OD-T2) could be preserved in the presence of specific amount of PEO or aPP. Relationship between the coherence lengths of P(NDI2OD-T2) and the electron mobility is established, elucidating the effect of π-stacking and polymer-backbone aggregates in the charge transportation. The P(NDI2OD-T2) aggregation in the π-stacking seems to have a greater influence on the electron mobility. | en |
| dc.description.provenance | Made available in DSpace on 2021-05-19T17:40:58Z (GMT). No. of bitstreams: 1 ntu-108-R06549009-1.pdf: 10138426 bytes, checksum: d6936ba2cbb705897206d27843ae761b (MD5) Previous issue date: 2019 | en |
| dc.description.tableofcontents | 摘要 I
Abstract II 目錄 III 圖目錄 VI 表目錄 XI 第一章、緒論 1 1.1 前言 1 1.2 有機場效電晶體簡介 2 1.2.1 有機場效電晶體元件結構及運作原理 2 1.2.2 有機場效電晶體各項參數 3 1.3 p型、n型及雙極性半導體高分子材料介紹 6 1.3.1 p型半導體高分子材料 7 1.3.2 n型半導體高分子材料 8 1.3.3 雙極性半導體高分子材料 9 1.4 電荷轉移理論 10 1.5 有機共軛高分子的薄膜製備 12 1.5.1 滴落塗佈法（drop casting） 12 1.5.2 刮刀塗佈法（Blade coating） 12 1.5.3 旋轉塗佈法（Spin coating） 13 1.6 薄膜形貌 13 1.7 高分子混摻文獻回顧 16 1.8 實驗動機與設計 21 合成路徑圖 23 第二章、結果與討論 24 2.1 單體結構鑑定 24 2.1.1 5,5'-bis(trimethylstannyl)-2,2'-bithiophene（6）結構鑑定 24 2.1.2 2,6-Dibromonaphthalene-1,4,5,8-tetracarboxylic-N,N'-bis (2octyldodecyl) diimide（8）的結構鑑定 25 2.2 高分子合成及結構鑑定 27 2.3 共軛高分子之分子量分析 29 2.4 高分子薄膜態吸收光譜分析 30 2.5 高分子熱性質分析 31 2.6 X光繞射圖譜分析 32 2.6.1 二維X光繞射圖譜 32 2.6.2 共軛高分子及非共軛高分子藉由二維X光繞射進行分析 34 2.6.3 共軛高分子混摻非共軛高分子藉由二維X光繞射進行分析 36 2.7 薄膜形貌分析 39 2.7.1 利用原子力顯微鏡技術分析薄膜表面形貌 39 2.7.2 利用X-射線光電子光譜技術分析薄膜在垂直方向上的形貌 43 2.8 理論計算 45 2.9 有機場效電晶體載子遷移率量測 47 2.10 迴歸分析 48 2.11 與先前工作的比較 50 第三章、結論 51 第四章、實驗 52 4.1 實驗所需化學試劑列表 52 4.2 實驗儀器 53 4.2.1 手套箱（Glove box） 53 4.2.2 核磁共振光譜儀（Nuclear Magnetic Resonance spectrometer；NMR） 53 4.2.3 凝膠滲透層析（Gel Permeation Chromatography；GPC） 53 4.2.4 旋轉塗佈機（Spin Coater） 54 4.2.5 蒸鍍機（Evaporator） 54 4.2.6 紫外光可見光吸收光譜儀（Ultraviolet–Visible Spectrometer；UV/vis） 54 4.2.7 X-射線光電子能譜儀（X-Ray Photoelectron Sprectroscpoe ; XPS） 55 4.2.8 原子力顯微鏡（Atomic Force Microscopy ; AFM） 55 4.3 單體合成 56 4.3.1 1-bromo-2-octyldodecane（2）的合成 56 4.3.2 N-(2-octyldodecyl)phthalimide（3）的合成 57 4.3.3 2-octyldodecylamine（4）的合成 58 4.3.4 5,5’-Bis(trimethylstannyl)-2,2’-bithiophene（6）的合成 59 4.3.5 2,6-Dibromonaphthalene-1,4,5,8-tetracarboxylic-N,N'-bis (2octyldodecyl) diimide（8）的合成 60 4.4 高分子聚合 61 4.5 有機半導體元件製備 62 4.5.1 矽晶圓處理 62 4.5.2 高分子薄膜製備 63 4.5.3 半導體元件電極蒸鍍 65 4.6 有機半導體元件量測 65 參考資料 67 附錄 70 | |
| dc.language.iso | zh-TW | |
| dc.title | 透過非共軛聚合物調節 P(NDI2OD-T2)形貌及電荷傳遞性質 | zh_TW |
| dc.title | Regulation of morphology and charge-transport properties for P(NDI2OD-T2) by non-conjugated polymers | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 107-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 楊小青(Hsiao-Ching Yang),童世煌(Shih-Huang Tung),邱昱誠(Yu-Cheng Chiu) | |
| dc.subject.keyword | 有機場效電晶體,n型半導體,薄膜形貌,電子遷移率, | zh_TW |
| dc.subject.keyword | OFET,n-type semiconductor,film morphology,electron mobility, | en |
| dc.relation.page | 112 | |
| dc.identifier.doi | 10.6342/NTU201901986 | |
| dc.rights.note | 同意授權(全球公開) | |
| dc.date.accepted | 2019-07-26 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 高分子科學與工程學研究所 | zh_TW |
| 顯示於系所單位： | 高分子科學與工程學研究所 | |
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