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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 楊志忠 | |
dc.contributor.author | Chi-Wu Liu | en |
dc.contributor.author | 劉季武 | zh_TW |
dc.date.accessioned | 2021-06-17T07:01:16Z | - |
dc.date.available | 2020-08-07 | |
dc.date.copyright | 2019-08-07 | |
dc.date.issued | 2019 | |
dc.date.submitted | 2019-08-01 | |
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/72579 | - |
dc.description.abstract | 在本研究中,我們於不同厚度的高鎵摻雜氧化鋅薄膜上製作不同凹槽深度的光柵結構,光柵週期固定在1100奈米。經由此種結構的穿透以及反射頻譜量測來探討表面電漿極化子及侷域表面電漿子的共振行為。當摻鎵氧化鋅薄膜的厚度為300奈米時,只有從空氣端入射量測的反射頻譜可觀察到表面電漿極化子及侷域表面電漿子的共振行為。當摻鎵氧化鋅薄膜的厚度變薄後,從空氣端及基板端入射所量測的穿透以及反射頻譜皆可以觀察到表面電漿極化子及侷域表面電漿子共振的特徵。然而,因為分別受空氣以及藍寶石基板的影響,從空氣端及基板端入射產生的表面電漿極化子及侷域表面電漿子特徵略有不同。而當光柵結構為分隔的週期性摻鎵氧化鋅區塊,且凹槽較淺時,則不會產生表面電漿極化子及侷域表面電漿子的共振。此研究中,我們也利用數值模擬來佐證我們的實驗結果。 | zh_TW |
dc.description.abstract | Based on highly Ga-doped ZnO (GaZnO) thin films of different thicknesses on sapphire substrate, grating structures of different grating ridge depths but with a fixed grating period at 1100 nm are fabricated for studying their surface plasmon polariton (SPP) and localized surface plasmon (LSP) resonance behaviors through the reflection and transmission measurements with light incident from top (air side) and bottom (sapphire side). When GaZnO thin film is thick (300 nm), the SPP and LSP features can be observed only from top through reflection measurement. When GaZnO thin film becomes thinner, the SPP and LSP features can be observed from top and bottom through either reflection or transmission measurement. However, the observed SPP and LSP features from top and bottom are slightly different due to the different effects of air and sapphire. When the grating structure consists of periodic isolated GaZnO islands, no SPP or LSP can be observed unless the ridge height is large enough for supporting LSP. Simulation studies are performed to well support the experimental data. | en |
dc.description.provenance | Made available in DSpace on 2021-06-17T07:01:16Z (GMT). No. of bitstreams: 1 ntu-108-R05941085-1.pdf: 12271729 bytes, checksum: 1a9fec0616a0c0da831029d7dd7d2ffe (MD5) Previous issue date: 2019 | en |
dc.description.tableofcontents | 致謝 i
中文摘要 ii Abstract iii Contents iv Chapter 1 Introduction 1 1.1 Transparent conducting oxides 1 1.2 Surface plasmon resonance in the infrared range 2 1.3 Research Motivations 3 1.4 Thesis structure 3 Chapter 2 Device Structures and Fabrication Procedures, and Simulation Method 5 2.1 GaZnO growth 5 2.2 Ellipsometry measurement and fitting results 5 2.3 SPP dispersion curve 7 2.4 GaZnO grating fabrication 8 2.5 Simulation method 9 Chapter 3 LSP and SPP on GaZnO Gratings Based on a Thick GaZnO Thin Film 17 3.1 Experimental demonstrations of SP resonance 17 3.2 Simulation results for identifying SPP and LSP 19 Chapter 4 LSP and SPP on GaZnO Gratings with Varied GaZnO Thin-film Thickness 29 4.1 GaZnO grating of 300 nm in total GaZnO thickness 29 4.2 GaZnO grating of 200 nm in total GaZnO thickness 31 4.3 GaZnO grating of 150 nm in total GaZnO thickness 33 4.4 Comparison between GaZnO gratings of different total GaZnO thicknesses 34 Chapter 5 LSP and SPP on GaZnO Gratings with Varied Grating Height 68 5.1 GaZnO grating of 150 nm in total GaZnO thickness with a smaller ridge height 68 5.2 GaZnO grating of 150 nm in both total GaZnO thickness and grating ridge height 68 5.3 GaZnO grating of 100 nm in both total GaZnO thickness and grating ridge height 69 Chapter 6 Comparisons among Different Grating Samples with Simulations 98 6.1 Simulation results corresponding to grating samples B-G and C-G 98 6.2 Simulation results corresponding to grating samples E-G and F-G 99 Chapter 7 Conclusions 118 References 119 | |
dc.language.iso | en | |
dc.title | 高鎵摻雜氧化鋅光柵結構的表面電漿子共振行為 | zh_TW |
dc.title | Surface Plasmon Resonance Behaviors of Highly Ga-doped ZnO Grating Structures | en |
dc.type | Thesis | |
dc.date.schoolyear | 107-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 江衍偉,吳育任,黃建璋,郭仰 | |
dc.subject.keyword | 表面電漿子,摻鎵氧化鋅,透明導電體,光柵結構, | zh_TW |
dc.subject.keyword | surface plasmon,GaZnO,transparent conducting oxides semiconductor,grating structures, | en |
dc.relation.page | 121 | |
dc.identifier.doi | 10.6342/NTU201902305 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2019-08-01 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
顯示於系所單位: | 光電工程學研究所 |
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