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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 彭隆瀚(Lung-Han Peng) | |
dc.contributor.author | "Yi-Lin, Ho" | en |
dc.contributor.author | 何宜霖 | zh_TW |
dc.date.accessioned | 2021-06-17T06:09:52Z | - |
dc.date.available | 2020-11-29 | |
dc.date.copyright | 2018-11-29 | |
dc.date.issued | 2018 | |
dc.date.submitted | 2018-11-27 | |
dc.identifier.citation | http://www.lightemittingdiodes.org/
李明道, 新式非揮發性記憶體之發展與挑戰, 奈米通訊, 21卷, No. 3, 國家奈米元件實驗室. http://www.nichia.co.jp/en/about_nichia/index.html Audrius Alkauskas, Matthew D. McCluskey, and Chris G. Van de Walle Tutorial: Defects in semiconductors—Combining experiment and theory J. Appl. Phys. 119, 181101 (2016) P. C. Wang, P. G. Li, , Y. S. Zhi, D. Y. Guo, Q. Pan, J. M. Zhan, H. Liu, J. Q. Shen, and W. H. Tang A. Bias tuning charge-releasing leading to negative differential resistance in amorphous gallium oxide/Nb:SrTiO3 heterostructure Appl. Phys. Lett. 107, 262110 (2015) 謝永龍, “氮化鎵面射型發光元件的製造與光學特性”, 國立交通大學光電工程學研究所碩士論文(2004) R. L. Puurunen, J. Appl. Phys. 97, 121301 (2005). Solid State Technology, March 1, 2007 H. Kim, A. J. Kellock, and S. M. Rossnagel, Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition “J. Appl. Phys.” 92, 7080 (2002). Stephan Bastiaan Simon Heil, Plasma-assisted atomic layer deposition of metal oxides and nitrides – Eindhoven : Technische Universiteit Eindhoven, 2007. 李柏廷, “電漿輔助型原子層沉積之發光二極體特性研究”, 國立台灣大學光電工程學研究所碩士論文(2014). 蘇水祥, “矽晶圓清洗製程”,電子工程學系/所,義守大學. 王崧豊, “銦鎵系氧化物相變化記憶體與薄膜電晶體元件之研製”, 國立台灣大學光電工程學研究所博士論文(2010). 彭峻威, “三族氮氧化物白光二極體及二極記憶體之研製”, 國立台灣大學光電工程學研究所碩士論文(2017). https://zh.wikipedia.org/wiki/CIE1931 A.R. Roberson, Computation of correlated color temperature and distribution temperature 莊東霖, “具氧化銦錫布拉格反射鏡之共振腔有機發光二極體”, 國立中山大學光電工程學研究所碩士論文(2012). D. Delbeke, R. Bockstaele, P. Bienstman, R. Baets and H. Benisty, 'High-efficiency semiconductor resonant-cavity light-emitting diodes: a review,' in IEEE Journal of Selected Topics in Quantum Electronics, vol. 8, no. 2, pp. 189-206, March-April 2002. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/71789 | - |
dc.description.abstract | 本論文利用原子層沉積系統製作結合發出寬頻白光以及電阻型記憶特性的元件,內容分三部分,第一部分闡述寬頻白光及電阻型記憶操作的原理,第二部分為元件之製作及材料分析,包含了電漿輔助型原子層沉積系統的原理與操作、X射線光電子能譜特性分析及元件完整的製程,第三部分為元件之量測及模擬計算,包含電激發光光譜、色座標及相關色溫計算、電壓-電流特性、直流電壓掃描分析、單點脈衝電阻切換、poly-Si元件之模擬分析。
吾人利用電漿輔助型原子層沉積系統沉積AlON/GaON/AlON/GaON/AlON (2/18/2/9/2nm)、AlON/GaON/AlON (1.5/4.5/1.5nm)、HfO2/GaON/HfO2(2/9/2nm)、HfO2/HfN/HfO2 (1.5/4.5/1.5nm),並製作在<100>p-Si基板、<111>n-Si基板及poly-Si基板,其中p-Si 啟動電壓皆較n-Si基板元件來的小1V左右,此驅動電壓之位移,顯示n /p型Si之費米能級差異,也說明白光機制乃來自 ITO 之電子與主動層本質缺陷之輻射結合。 吾人亦建立poly-Si元件之模擬計算模型,可利用結構之厚度推算發光結果,並透過模擬與實際量測相互驗證。而元件記憶體電阻切換抹寫次數可達數百次。 | zh_TW |
dc.description.abstract | In this thesis, a new kind of devices which combines broadband white light emission and resistive random access memory characteristics is demonstrated. The devices were prepared by plasma-enhanced atomic layer deposition (PE-ALD).
There are three main parts in this thesis. First, the mechanisms of broadband white light emission and resistive random access memory characteristics are reviewed. Second, the fabrication of devices, includ-ing the mechanism and operation of PE-ALD, and X-ray photoelectron spectroscopy analysis of Gallium oxy-nitride are introduced. The third part is the measurement, simulation, and analysis of devices, including electroluminescence spectra, color coordinates, color temperature, I-V characteristics, DC voltage sweep analysis, pulse memory switching operation, and simulation of the device on poly-Si. PE-ALD is used to deposit AlON/GaON/AlON/GaON/AlON (2/18/2/9/2nm), AlON/GaON/AlON(1.5/4.5/1.5nm), HfO2/GaON/HfO2 (2/9/2nm), HfO2/HfN/HfO2 (1.5/4.5/1.5nm), on p-Si<100>,n-Si<111> , and poly-Si substrates. The turn-on voltages of devices on p-Si are found 1V smaller than those of the devices on n-Si, which shows the Fermi level difference of p-Si and n-Si, and describes the broad band white light emission is owning to the radiation combination of the electrons from Indium Tin Oxide and the intrinsic defect of ALD layer. We build a simulation method for poly-Si device, which can be used to estimate the emission result by the thickness of the structure. We can verify the simulation result with that of the experimental measurement. The number of ReRAM switching operations can be up to hundreds of cycles. | en |
dc.description.provenance | Made available in DSpace on 2021-06-17T06:09:52Z (GMT). No. of bitstreams: 1 ntu-107-R05941109-1.pdf: 5696092 bytes, checksum: 9e895b81988ed74eaf2efa444cdaa6e0 (MD5) Previous issue date: 2018 | en |
dc.description.tableofcontents | Chapter 1 緒論 1
1.1 白光二極體簡介 1 1.2 新式非揮發性記憶體簡介 3 1.3 研究動機與論文概述 8 1.3.1 研究動機 8 1.3.2 論文概述 10 Chapter 2 白光二極體及二極記憶體元件之原理 11 2.1 白光二極體的發光原理 11 2.2 二極記憶體的操作原理 13 2.3 Fabry-Perot Cavity 理論 16 Chapter 3 白光二極體及二極記憶體的元件製作 19 3.1 原子層沉積系統 Atomic Layer Deposition 19 3.1.1 ALD技術發展沿革 20 3.1.2 ALD成長機制 21 3.2 PE-ALD機台架構及沉膜材料分析 24 3.2.1 機台架構 24 3.3 元件製作流程 30 3.4 元件材料分析 41 Chapter 4 元件量測與模擬 46 4.1 量測系統架構與方法 47 4.1.1 量測系統架構 47 4.1.2 量測計算方法 49 4.2 發光二極體量測及模擬 55 4.2.1 發光二極體光性量測 55 4.2.2 發光二極體於poly-Si玻璃基板上之光性量測模擬 59 4.2.3 發光二極體電性量測 90 4.3 二極記憶體量測分析 95 4.3.1 直流電壓掃描分析 95 Chapter 5 結論與未來展望 103 5.1 結論 103 5.2 優化及未來展望 104 附錄 107 參考文獻 115 | |
dc.language.iso | zh-TW | |
dc.title | 於poly-Si上之白光二極體及二極記憶體之研製 | zh_TW |
dc.title | A Development of White Light Emitting Diode
and Diode Memory on poly-Silicon substrate | en |
dc.type | Thesis | |
dc.date.schoolyear | 107-1 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 張亞中(Yia-Chung Chang),王維新(WANG WEI XIN),賴志明(Chih Ming, Lai) | |
dc.subject.keyword | 發光二極體,電阻型記憶體, | zh_TW |
dc.subject.keyword | LED,ReRAM, | en |
dc.relation.page | 116 | |
dc.identifier.doi | 10.6342/NTU201804281 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2018-11-28 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
顯示於系所單位: | 光電工程學研究所 |
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