請用此 Handle URI 來引用此文件:
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/71296
標題: | 高產率多電子束直寫系統之鄰近效應修正 High Throughput Proximity Effect Correction for Multiple Electron Beam Direct Write Systems |
作者: | Jing-Syuan Huang 黃靖軒 |
指導教授: | 陳中平 |
關鍵字: | 電子束曝光,電子束鄰近效應修正,鄰近效應,電子束直寫系統,電子束,資料壓縮, Lithography,Electron Beam,EPC,E-beam Proximity Correction,MEBDW,Data Compression Algorithm, |
出版年 : | 2018 |
學位: | 碩士 |
摘要: | 超大型積體電路之最小關鍵尺寸隨著製程的演進不斷地縮小,傳統光學曝光受限於其使用光源的波長,或許不再是最實際的選擇,許多下一代製程相應而生。
在這些下一代製程中,電子束微影系統以其高解析度為人所知,此特色卻也帶來了資料量龐大之問題。為了達到與傳統製程一樣的產率,需要將電路資料壓縮後,在資料傳輸至曝光機台的同時,在機台上進行解壓縮及曝光 。此外,為了提升曝光速率,可以採用大量平行的電子束。 在曝光過程中,電子束散射所產生之鄰近效應會造成曝光後的電路與設計有所差異,可能使得電路表現不如預期。此問題需要針對電路佈局做修改來解決。然而,用來壓縮電路之演算法,仰賴電路的規律性及簡單性,鄰近效應修正卻會使得原本的電路複雜化,導致資料壓縮率下降,可能無法達到需要的產率。 本論文欲探討的問題是,如何在產率能夠跟傳統光學曝光製程一樣的情況下,利用改變電路佈局之方式來縮小曝光後,實際電路跟原設計電路間的差距。本篇論文提出可以提升壓縮率之鄰近效應修正方法,使得電路具有特殊的排列,並且藉由觀察電路佈局資料之特性,進一步強化壓縮演算法,同時解決兩個問題,證明電子束微影系統在現實中具有其可行性。 The feature size of Integrated Circuits keeps shrinking along with the progress of manufactural process. Due to wave length limitation of light source, the manufacturing cost of traditional optical lithography may be too much Among the candidates of next-generation lithography, electron beam lithography is known for its high resolution. However, the high resolution brings up the problems of huge data size and low speed. In order to reach the throughput of the traditional lithography, we can use multiple electron beam lithography systems with compression algorithm. The layout data can be compressed before the transmission and then decompressed on the E-beam system while exposing the circuit patterns. However, the exposed layout can be very different from the original design because of the proximity effect. The method for fix the dimension problem can make the layout more complex and lead to low compression ratio. In this thesis, we propose an electron beam proximity effect correction method which can maintain the compression ratio to achieve high throughput. We narrow down the difference between the original design and the exposed one as small as possible by changing the pixel value of the original layout. The method does not need any modification of the e-beam lithography system. Besides, we observe the properties of the pattern alignment in the corrected layout and modify the compression algorithm accordingly to enhance the performance of compression. We prove that electron beam lithography can work well in practice by solving these two problems in the meantime. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/71296 |
DOI: | 10.6342/NTU201801779 |
全文授權: | 有償授權 |
顯示於系所單位: | 電子工程學研究所 |
文件中的檔案:
檔案 | 大小 | 格式 | |
---|---|---|---|
ntu-107-1.pdf 目前未授權公開取用 | 10.32 MB | Adobe PDF |
系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。