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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/71229完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 陳永芳(Yang-Fang Chen) | |
| dc.contributor.author | Shu-Yi Cai | en |
| dc.contributor.author | 蔡書逸 | zh_TW |
| dc.date.accessioned | 2021-06-17T04:59:48Z | - |
| dc.date.available | 2021-08-01 | |
| dc.date.copyright | 2018-08-01 | |
| dc.date.issued | 2018 | |
| dc.date.submitted | 2018-07-25 | |
| dc.identifier.citation | Reference
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/71229 | - |
| dc.description.abstract | 在未來的智慧型生活的藍圖裡，充滿行動的跟穿戴式裝置和物聯網結合在一起,使實現有即時的輕鬆的效率的生活。而行動的跟穿戴式裝置的研究是現今主流的發展。使其成為自動化的、輕量的、無感的、多功能的、高速傳輸的、可信賴的。邁向光通訊跟物聯網應用基於優越的穿戴式電子元件，因此這論文我設計、製造及演示了磁性皮膚與光電類神經記憶體。
1. 邁進人工智慧感知能力：超高靈敏可撓式磁電元件基於混合磁性材料 近年來可撓磁電元件備受極大關注，因其吸引人的功能性跟俱潛力應用，例如醫療用途、記憶體、軟性機器人、導航及非觸控式的人機互動介面。在此，我們展示全新的磁－壓電元件，其對磁場俱超高靈敏度在磁場100毫特斯拉區間電阻變化數次方。這元件是由鐵－鎳合金粉末鑲入表面有微金字塔結構的矽膠裡，再用銀奈米線塗布矽膠表面。這元件對於磁場強度具有超高靈敏度不僅可作為開關元件也可以做為感測器，這樣的特性非常適用於類比訊號通訊。更值得注意的是這元件具備多項優勢大面積製成、製程簡單、反應速度快、低操作電壓、低能量損耗、高度可撓性可以服貼再任意曲面，以上的特點十分利於發展未來的人機互動系統。在此我們演示了非觸控式鋼琴鍵盤、即時的磁場視覺化跟自我供電系統之整合。藉由這新穎的元件讓原本陌生無法感知的磁場也可以運用在日常生活中。對於穿戴式元件跟智能系統的發展我們的研究成果提供了絕佳的平台。 2. 應用於光通訊與邏輯編譯之光電共譯類神經網路記憶體 以光作為資訊傳輸的方式，可以提傳輸速度、安全性，縮小元件體積，如此一來有機會解決目前電子元件太過複雜的問題。在此，我們呈現一種整合型奈米電子元件，這元件整合了處理跟儲存光電資訊功能。這元件為可撓垂直多層結構並具有記憶體的效果。在內文顯示以獨特多元的操作方式。首先此元件藉由照光情況下產生的光電流可用來閱讀元件的組態，以達自我供電之操作。更值得注意的，可以用不同的光強度去調適開關切換所需的電壓，這樣的行為類似為類神經網路記憶元可以利用光或電訊號學習跟檢視當下的組態。多層組態、學習能力、可光控制邏輯操作如此的優越特性提了供未來物聯網普及便宜的光通訊偵測器。 | zh_TW |
| dc.description.abstract | The blueprint for the future smart life, mobile devices and wearable electronics are combined with Internet of Things, which enable instant, easy and efficient life. The research of the wearable electronics is the current mainstream development, with autonomous, lightweight, imperceptive multi-functional, high-speed transmission, and reliable characteristics. Superior wearable electronic components permit convenient applications in optical communication and Internet of Things. Therefore, in this thesis we designed, manufactured and demonstrated a magnetoelectronic skin and an optoelectronic neuron memory.
1. Ultrahigh Sensitive and Flexible Magnetoelectronics with Magnetic Nanocomposites: Toward an Additional Perception of Artificial Intelligence In recent years, flexible magnetoelectronics has attracted a great attention for its intriguing functionalities and potential applications, such as healthcare, memory, soft robots, navigation, and touchless human−machine interaction systems. Here, we provide the first attempt to demonstrate a new type of magneto-piezoresistance device, which possesses an ultrahigh sensitivity with several orders of resistance change under an external magnetic field (100 mT). In our device, Fe−Ni alloy powders are embedded in the silver nanowire-coated micropyramid polydimethylsiloxane films. Our devices can not only serve as an on/off switch but also act as a sensor that can detect different magnetic fields because of its ultrahigh sensitivity, which is very useful for the application in analog signal communication. Moreover, our devices contain several key features, including large-area and easy fabrication processes, fast response time, low working voltage, low power consumption, excellent flexibility, and admirable compatibility onto a freeform surface, which are the critical criteria for the future development of touchless human−machine interaction systems. On the basis of all of these unique characteristics, we have demonstrated a nontouch piano keyboard, instantaneous magnetic field visualization, and autonomous power system, making our new devices be integrable with magnetic field and enable to be implemented into our daily life applications with unfamiliar human senses. Our approach therefore paves a useful route for the development of wearable electronics and intelligent systems. 2. A hybrid optical/electric neuron for light-based logic and communication Light-based information processing has the potential to increase speed, security and scalability of electronics if issues in the device complexity could be resolved. We here demonstrate an integrated nano-electronic device that can combine, store, and manipulate optical and electronic information. Employing a mechanically flexible and multilayered structure, a device is realized that shows memristive behavior. Illumination is shown to control the device operation in several unique ways. First, the device produces photocurrent that allows us to read out the device state in a self-powered manner. More importantly, a varying light intensity is shown to modulate the switching transition in a proportional manner that is akin to a neuron with variable plasticity that can be taught and queries using either light or electrical inputs. This behavior enables a multi-level light-controlled logic and teaching schemes that can be applied to light-based communication devices and provides a route towards ubiquitous and low-cost sensors for future internet of things applications. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-17T04:59:48Z (GMT). No. of bitstreams: 1 ntu-107-D02222012-1.pdf: 2592181 bytes, checksum: 7c415c1aaa62972af85a15df56ecac6f (MD5) Previous issue date: 2018 | en |
| dc.description.tableofcontents | CONTENTS
口試委員會審定書 # 誌謝 i 中文摘要 ii ABSTRACT iv LIST OF PUBLICATION viii CONTENTS x LIST OF FIGURES xiii Chapter 1 Introduction 1 1.1 Flexible electronics 1 1.2 Flexible magnetic sensors 2 1.3 Optoelectronic memory 3 1.4 Overview of the dissertation 4 Reference 6 Chapter 2 Theoretical Background and Experiment at Details 8 2.1 Polydimethylsiloxane (PDMS) 8 2.2 Silver nanowires (AgNWs) 8 2.3 Silicon etching process 9 2.4 The measurement of magnetic sensor 13 2.5 Resistance random access memory (RRAM) 14 2.5.1 Resistive switching behaviors 14 2.5.2 Resistive switching mechanisms 16 2.6 Photovoltaic cell 18 2.7 The measurement of the hybrid neuron 22 Reference 23 Chapter 3 Ultrahigh Sensitive and Flexible Magnetoelectronics with Magnetic Nanocomposites: Toward an Additional Perception of Artificial Intelligence 26 3.1 Introduction 26 3.2 Results 29 3.3 Summary 39 3.4 Experimental section 41 Reference 52 Chapter 4 A hybrid optical/electric neuron for light-based logic and communication 57 4.1 Introduction 57 4.2 Results 59 4.3 Summary 63 4.4 Experimental section 63 Reference 70 Chapter 5 Conclusion 73 LIST OF FIGURES Fig. 2 1 SEM images of (a) 700 nm inverted nanopyramids (b) cross sectional view of inverted nanopyramids. the 700 nm base size inverted nanopyramids with 100 nm separation.10 10 Fig. 2 2 the manufacturing process of the pyramid-structured silicon mold. 12 Fig. 2 3 The measurement schematic of the magnetic sensor. 13 Fig. 2 4 (a) Schematic of MIM structure for metal–oxide RRAM, and schematic of metal–oxide memory’s I–V curves, showing two modes of operation: (b) unipolar and (c) bipolar.16 15 Fig. 2 5 Typical current-voltage characteristic of a Ag/Ag-Ge-Se/Pt electrochemical metallization cell using a triangular voltage sweep.21 The ON conductance is limited by a compliance current of 25mA. The insets A to D show the different stages of the switching procedure.15 17 Fig. 2 6 Chemical structure of poly(3-hexyl thiophene), P3HT, and [6,6]-phenylC61-butyric acid methyl ester, PCBM. 19 Fig. 2 7 Structure of the polymer photovoltaic devices. 19 Fig. 2 8 The measurement schematic of the optical/electric hybrid neuron. 22 Fig. 3 1 Schematic illustration of the device fabrication process. 43 Fig. 3 2 (a) SEM images of the AgNWs/PDMS film with pyramid microstructures. (b) Structure of device and working process. 44 Fig. 3 3 (a) I-V characteristics of the device under different magnetic field. (b) Real time current responses under different magnetic field at 0.1 V. (c) (d) The current responses under different magnetic fields at 0.1 V. 45 Fig. 3 4 The current-magnetic field responses under increasing and decreasing magentic field at 0.1 V. 46 Fig. 3 5 (a) The current-magnetic field responses with different heights of the air gap operating at 0.1 V. (b) The current-magnetic field responses under different width of the air gap operating at 0.1 V. 47 Fig. 3 6 Real-time response to the load/unload magnetic field at 150 mT (a) and 0.1 V (b). 48 Fig. 3 7 (a) The bending test of the magnetic sensor under different degree of bending at 150 mT and 0.1 V. (b) The bending cycles measurement of magnetic sensor over 5000 times with bending radius 5 mm. 49 Fig. 3 8 (a) I-V characteristics of the integrated magnetic sensor and solar cell under 1.083 and 0.144 mW cm-2 illumination at the magnetic field of 150 mT. (b) I-t characteristics of the integrated magnetic sensor and solar cell at the magnetic field of 150 mT. The inserted photo shows the combination of our device and a silicon based solar cell. 50 Fig. 3 9 (a)-(c) and (d) The magnetic sensor was directly integrated with RGB LEDs. The spectra and CIE coordinate were individually measured under different magnetic field of 100, 150, and 300 mT. (e) The circuit diagram of the magnetic sensor integrated with RGB LEDs. 51 Fig. 4 1 (a) Schematic illustration of the vertically stacked architecture and the energy-level diagram (Au/PMMA/Ag/MoO3/P3HT:PCBM/ZnO/ITO). (b) Optical images of the device. (c) The cross-sectional SEM images of the vertically stacked cell. 65 Fig. 4 2 (a) I-V characteristic of Ag/PMMA/Au memory. (b) ON/OFF switch for 100 cycles, read by 0.2 V. (c) The ON and OFF currents were read by 0.2 V under different degree of bending. (d) The ON and OFF currents were read by 0.2 V over 1000 times bending with bending radius 5 mm. 66 Fig. 4 3 Bipolar resistive switching property, I-V characteristic of Ag/PMMA/Au memory. 67 Fig. 4 4 (a) I-T characteristic of a hybrid cell under constant voltage 1 V. (b) I-V characteristics of a hybrid cell under different light intensities with white light LED. (c) SET voltage-light intensity of a hybrid cell with the fitted curve. (d) Electric pulse programming of Ag/PMMA/Au memory. (e) Light pulse programming of a hybrid cell. (f) Light and electric pulse programming of a hybrid cell. The inset figure is the concept of logic. 68 Fig. 4 5 (a) I-T characteristics of the hybrid cell, when the light pulses (0.172 mW/mm2) coincides with electrical pulses (1 V). (b) I-T characteristics of the hybrid cell, when the light pulses (0.172 mW/mm2) do not coincide with the electrical pulses (1 V). (c) The switching behavior of the hybrid cell under the electric and light pulse input cycles. (d) The concept of light-based communication. 69 | |
| dc.language.iso | en | |
| dc.title | 可撓可穿戴磁電、光電元件 | zh_TW |
| dc.title | A Flexible, Wearable and Multifnctional Magnetoelectronic Device and an Optoelectronic Neuron Memory | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 106-2 | |
| dc.description.degree | 博士 | |
| dc.contributor.oralexamcommittee | 謝馬利歐(Mario Hofmann),謝雅萍,林泰源(Tai-Yuan Lin),許芳琪 | |
| dc.subject.keyword | 磁電元件,非觸式元件,超靈敏度,電子皮膚,全自主性,人工類神經網路,光通訊,光電混和元件,光照上網技術 (Li-Fi),記憶體, | zh_TW |
| dc.subject.keyword | magnetoelectronic,touchless,ultra-sensitive,e-skin,full autonomy,artificial neuron network,light-based communication,hybrid optoelectronics,light fidelity,memory, | en |
| dc.relation.page | 75 | |
| dc.identifier.doi | 10.6342/NTU201801961 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2018-07-26 | |
| dc.contributor.author-college | 理學院 | zh_TW |
| dc.contributor.author-dept | 物理學研究所 | zh_TW |
| 顯示於系所單位： | 物理學系 | |
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