請用此 Handle URI 來引用此文件:
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/70479
完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 陳敏璋 | |
dc.contributor.author | Yu-Syuan Cai | en |
dc.contributor.author | 蔡宇軒 | zh_TW |
dc.date.accessioned | 2021-06-17T04:29:06Z | - |
dc.date.available | 2023-08-14 | |
dc.date.copyright | 2018-08-14 | |
dc.date.issued | 2018 | |
dc.date.submitted | 2018-08-13 | |
dc.identifier.citation | [1] G. E. Moore, 'Cramming more components onto integrated circuits,' Proceedings of the IEEE, vol. 86, pp. 82-85, 1998.
[2] J. Robertson, 'High dielectric constant gate oxides for metal oxide Si transistors,' Reports on Progress in Physics, vol. 69, p. 327, 2005. [3] K. Farmer, M. Andersson, and O. Engström, 'Time‐dependent positive charge generation in very thin silicon oxide dielectrics,' Applied physics letters, vol. 60, pp. 730-732, 1992. [4] S. I. Association, 'The national technology roadmap for semiconductors,' http://www. sematech. org/public/roadmap/1994rdmp. htm, 1994. [5] M. Baklanov, K. Maex, and M. Green, Dielectric films for advanced microelectronics vol. 12: John Wiley & Sons, 2007. [6] S. P. Murarka, I. V. Verner, and R. J. Gutmann, Copper-fundamental mechanisms for microelectronic applications: Wiley-Interscience, 2000. [7] R. He, C. Yana, C. Yong, S. Guggilla, S. Kesapragada, Y. Weifeng, et al., 'Physical vapor deposited AlN as scalable and reliable interconnect etch-stop ≤ 10nm node,' in 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC), 2016, pp. 24-26. [8] A. Ogawa, K. Iwamoto, H. Ota, Y. Morita, M. Ikeda, T. Nabatame, et al., '0.6 nm-EOT high-k gate stacks with HfSiOx interfacial layer grown by solid-phase reaction between HfO2 and Si substrate,' Microelectronic engineering, vol. 84, pp. 1861-1864, 2007. [9] V. Afanas’ ev, M. Houssa, A. Stesmans, and M. Heyns, 'Electron energy barriers between (100) Si and ultrathin stacks of SiO 2, Al 2 O 3, and ZrO 2 insulators,' Applied Physics Letters, vol. 78, pp. 3073-3075, 2001. [10] H. J. Quah and K. Y. Cheong, 'Effects of post-deposition annealing ambient on Y2O3 gate deposited on silicon by RF magnetron sputtering,' Journal of Alloys and Compounds, vol. 529, pp. 73-83, 2012. [11] W. Yang, J. Marino, A. Monson, and C. A. Wolden, 'An investigation of annealing on the dielectric performance of TiO2 thin films,' Semiconductor science and technology, vol. 21, p. 1573, 2006. [12] Y. Senzaki, 'Nitridation of high-k dielectric films,' ed: Google Patents, 2005. [13] R. Nieh, R. Choi, S. Gopalan, K. Onishi, C. S. Kang, H.-J. Cho, et al., 'Evaluation of silicon surface nitridation effects on ultra-thin ZrO 2 gate dielectrics,' Applied physics letters, vol. 81, pp. 1663-1665, 2002. [14] T. Suntola and J. Antson, 'Method for producing compound thin films,' ed: Google Patents, 1977. [15] S. M. George, 'Atomic layer deposition: an overview,' Chemical reviews, vol. 110, pp. 111-131, 2009. [16] R. L. Puurunen, 'Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process,' Journal of applied physics, vol. 97, p. 9, 2005. [17] H. Kim and W.-J. Maeng, 'Applications of atomic layer deposition to nanofabrication and emerging nanodevices,' Thin Solid Films, vol. 517, pp. 2563-2580, 2009. [18] T. Suntola, 'Atomic layer epitaxy,' Thin Solid Films, vol. 216, pp. 84-89, 1992. [19] G. Dingemans, C. Van Helvoirt, M. Van de Sanden, and W. Kessels, 'Plasma-assisted atomic layer deposition of low temperature SiO2,' ECS Transactions, vol. 35, pp. 191-204, 2011. [20] H. Kim, 'Characteristics and applications of plasma enhanced-atomic layer deposition,' Thin Solid Films, vol. 519, pp. 6639-6644, 2011. [21] J. Van Hemmen, S. Heil, J. Klootwijk, F. Roozeboom, C. Hodson, M. Van de Sanden, et al., 'Plasma and Thermal ALD of Al2O3 in a Commercial 200 mm ALD Reactor,' Journal of The Electrochemical Society, vol. 154, pp. G165-G169, 2007. [22] M. Leskelä and M. Ritala, 'Atomic layer deposition chemistry: recent developments and future challenges,' Angewandte Chemie International Edition, vol. 42, pp. 5548-5554, 2003. [23] H. B. Profijt, 'Plasma-surface interaction in plasma-assisted atomic layer deposition,' PhD thesis, Eindhoven University of Technology, 2012. [24] H. B. Profijt, S. E. Potts, M. C. M. v. d. Sanden, and W. M. M. Kessels, 'Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges,' Journal of Vacuum Science & Technology A, vol. 29, p. 050801, 2011. [25] M. Houssa, L. Pantisano, L.-Å. Ragnarsson, R. Degraeve, T. Schram, G. Pourtois, et al., 'Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions,' Materials Science and Engineering: R: Reports, vol. 51, pp. 37-85, 2006. [26] J. Robertson, 'High dielectric constant oxides,' The European Physical Journal-Applied Physics, vol. 28, pp. 265-291, 2004. [27] N. Lu, 'High-permittivity dielectrics and high mobility semiconductors for future scaled technology: Hf-based High-K gate dielectrics and interface engineering for HfO₂/Ge CMOS device,' 2006. [28] J. Robertson, 'Band offsets of wide-band-gap oxides and implications for future electronic devices,' Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 18, pp. 1785-1791, 2000. [29] A. Rosenberg, D. Hu, H. Chouaib, Z. Tan, and N. Malkova, Tracking the defects and the band gap of ultra-thin HfO2 using a multi-oscillator Cody Lorentz model, 2018. [30] H. Fujiwara, Spectroscopic ellipsometry: principles and applications: John Wiley & Sons, 2007. [31] 鄭信民 and 林麗娟, 'X 光繞射應用簡介,' 工業材料雜誌 (181), 頁, pp. 100-108, 2002. [32] S. W. King, 'Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects,' ECS Journal of Solid State Science and Technology, vol. 4, pp. N3029-N3047, January 1, 2015 2015. [33] A. Grill, S. M. Gates, T. E. Ryan, S. V. Nguyen, and D. Priyadarshini, 'Progress in the development and understanding of advanced low k and ultralow k dielectrics for very large-scale integrated interconnects—State of the art,' Applied Physics Reviews, vol. 1, p. 011306, 2014. [34] S. W. King, J. P. Barnak, M. D. Bremser, K. M. Tracy, C. Ronning, R. F. Davis, et al., 'Cleaning of AlN and GaN surfaces,' Journal of Applied Physics, vol. 84, pp. 5248-5260, 1998. [35] C. Da, X. Dong, W. Jingjing, and Z. Yafei, 'Investigation of chemical etching of AlN film with different textures by x-ray photoelectron spectroscopy,' Journal of Physics D: Applied Physics, vol. 41, p. 235303, 2008. [36] H. B. Profijt, S. E. Potts, M. C. M. v. d. Sanden, and W. M. M. Kessels, 'Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges,' Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 29, p. 050801, 2011. [37] S. M. George, 'Atomic Layer Deposition: An Overview,' Chemical Reviews, vol. 110, pp. 111-131, 2010/01/13 2010. [38] J. Dendooven, D. Deduytsche, J. Musschoot, R. L. Vanmeirhaeghe, and C. Detavernier, 'Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition,' Journal of The Electrochemical Society, vol. 157, pp. G111-G116, April 1, 2010 2010. [39] M. Bosund, T. Sajavaara, M. Laitinen, T. Huhtio, M. Putkonen, V.-M. Airaksinen, et al., 'Properties of AlN grown by plasma enhanced atomic layer deposition,' Applied Surface Science, vol. 257, pp. 7827-7830, 2011/06/15/ 2011. [40] M. Alevli, C. Ozgit, I. Donmez, and N. Biyikli, 'Structural properties of AlN films deposited by plasma‐enhanced atomic layer deposition at different growth temperatures,' physica status solidi (a), vol. 209, pp. 266-271, 2012. [41] V. Brien and P. Pigeat, 'Correlation between the oxygen content and the morphology of AlN films grown by r.f. magnetron sputtering,' Journal of Crystal Growth, vol. 310, pp. 3890-3895, 2008/08/01/ 2008. [42] M. Kazan, B. Rufflé, C. Zgheib, and P. Masri, 'Oxygen behavior in aluminum nitride,' Journal of Applied Physics, vol. 98, p. 103529, 2005. [43] R. A. Youngman and J. H. Harris, 'Luminescence Studies of Oxygen‐Related Defects In Aluminum Nitride,' Journal of the American Ceramic Society, vol. 73, pp. 3238-3246, 1990. [44] J. H. Harris, R. A. Youngman, and R. G. Teller, 'On the nature of the oxygen-related defect in aluminum nitride,' Journal of Materials Research, vol. 5, pp. 1763-1773, 2011. [45] S. E. Potts, G. Dingemans, C. Lachaud, and W. M. M. Kessels, 'Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor,' Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 30, p. 021505, 2012. [46] H.-Y. Shih, W.-H. Lee, W.-C. Kao, Y.-C. Chuang, R.-M. Lin, H.-C. Lin, et al., 'Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing,' Scientific Reports, vol. 7, p. 39717, 01/03/online 2017. [47] S. Y. Kim, K. Hong, K. Kim, H. K. Yu, W.-K. Kim, and J.-L. Lee, 'Effect of N 2, Ar, and O 2 plasma treatments on surface properties of metals,' ed: AIP, 2008. [48] Y.-L. Cheng, J.-F. Huang, Y.-M. Chang, and J. Leu, 'Impact of plasma treatment on structure and electrical properties of porous low dielectric constant SiCOH material,' Thin Solid Films, vol. 544, pp. 537-540, 2013. [49] D. Chen, J. Wang, D. Xu, and Y. Zhang, 'The influence of the AlN film texture on the wet chemical etching,' Microelectronics Journal, vol. 40, pp. 15-19, 2009. [50] I. Cimalla, C. Foerster, V. Cimalla, V. Lebedev, D. Cengher, and O. Ambacher, 'Wet chemical etching of AlN in KOH solution,' physica status solidi (c), vol. 3, pp. 1767-1770, 2006. [51] P. Motamedi and K. Cadien, 'XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition,' Applied Surface Science, vol. 315, pp. 104-109, 2014. [52] P. Bowen, J. G. Highfield, A. Mocellin, and T. A. Ring, 'Degradation of aluminum nitride powder in an aqueous environmet,' Journal of the American Ceramic Society, vol. 73, pp. 724-728, 1990. [53] D. Vanderbilt, X. Zhao, and D. Ceresoli, 'Structural and dielectric properties of crystalline and amorphous ZrO2,' Thin Solid Films, vol. 486, pp. 125-128, 2005. [54] Y. Wenli, M. Joseph, M. Alexander, and A. W. Colin, 'An investigation of annealing on the dielectric performance of TiO 2 thin films,' Semiconductor Science and Technology, vol. 21, p. 1573, 2006. [55] C.-S. Chang, T.-P. Liu, and T.-B. Wu, 'Effects of postannealing on the electrical properties of Ta2O5 thin films deposited on TiN/T,' Journal of Applied Physics, vol. 88, pp. 7242-7248, 2000/12/15 2000. [56] W. H. S. B.W. Busch, E. Garfunkel, T. Gustafsson, W. Qi, R. Nieh, J. Lee,, 'Oxygen exchange and transport in thin zirconia films on Si(100),' 2000 [57] C. K. Goldberg and V. S. Wang, 'Chapter 4 - Compatibilities of dielectric films A2 - Murarka, S.P,' in Interlayer Dielectrics for Semiconductor Technologies, M. Eizenberg and A. K. Sinha, Eds., ed San Diego: Academic Press, 2003, pp. 77-119. [58] S. Jeon, C.-J. Choi, T.-Y. Seong, and H. Hwang, 'Electrical characteristics of ZrO x N y prepared by NH 3 annealing of ZrO 2,' Applied Physics Letters, vol. 79, pp. 245-247, 2001. [59] J.-J. Huang, L.-T. Huang, M.-C. Tsai, M.-H. Lee, and M.-J. Chen, 'Enhancement of electrical characteristics and reliability in crystallized ZrO2 gate dielectrics treated with in-situ atomic layer doping of nitrogen,' Applied Surface Science, vol. 305, pp. 214-220, 2014. [60] J.-J. Huang, Y.-J. Tsai, M.-C. Tsai, M.-H. Lee, and M.-J. Chen, 'Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability,' Applied Surface Science, vol. 330, pp. 221-227, 2015. [61] I.-W. Kim, S.-J. Kim, D.-H. Kim, H. Woo, M.-Y. Park, and S.-W. Rhee, 'Fourier transform infrared spectroscopy studies on thermal decomposition of tetrakis-dimethyl-amido zirconium for chemical vapor deposition of ZrN,' Korean Journal of Chemical Engineering, vol. 21, pp. 1256-1259, December 01 2004. [62] L. M. Terman, 'An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes,' Solid-State Electronics, vol. 5, pp. 285-299, 1962. [63] J. Schmidt, F. M. Schuurmans, W. C. Sinke, S. W. Glunz, and A. G. Aberle, 'Observation of multiple defect states at silicon–silicon nitride interfaces fabricated by low-frequency plasma-enhanced chemical vapor deposition,' Applied Physics Letters, vol. 71, pp. 252-254, 1997. [64] M. Guittet, J. Crocombette, and M. Gautier-Soyer, 'Bonding and XPS chemical shifts in ZrSiO 4 versus SiO 2 and ZrO 2: Charge transfer and electrostatic effects,' Physical Review B, vol. 63, p. 125117, 2001. [65] E. Ravizza, S. Spadoni, R. Piagge, P. Comite, and C. Wiemer, 'XPS composition study of stacked Si oxide/Si nitride/Si oxide nano‐layers,' Surface and Interface Analysis, vol. 44, pp. 1209-1213, 2012. [66] C. S. Kang, H.-J. Cho, K. Onishi, R. Nieh, R. Choi, S. Gopalan, et al., 'Bonding states and electrical properties of ultrathin HfO x N y gate dielectrics,' Applied physics letters, vol. 81, pp. 2593-2595, 2002. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/70479 | - |
dc.description.abstract | 本論文主要分為兩部分,首先第一部分透過原子層沉積技術成長氮化物薄膜作為蝕刻終止層,加入不同ALD處理提高氮化物薄膜折射率,從GIXRD繞射分析發現,在ALD製程中加入電漿處理,能夠提高氮化物薄膜的結晶性,進而增強薄膜抗蝕刻能力,並提高氮化物薄膜崩潰電場。此外在ALD製程中加入TMA-treatment能夠有效抑制氮化物薄膜的漏電流、提高氮化物薄膜崩潰電場。接著XPS成分分析薄膜內的鍵結情形,藉此解釋不同ALD製程的氮化物薄膜在電性及蝕刻率上的差異,發現氮化物薄膜經過TMA-treatment後,薄膜中氧含量變高,因此有較高的蝕刻速率,薄膜抗蝕刻能力下降。第二部分利用ALD技術沉積高介電係數介電層MOS元件,在氧化層與矽基板間插入氮化層做為緩衝層,抑制退火處理時氧原子向矽基板擴散形成low-k介面層,降低元件整體等效電容厚度,透過插入氮化層使得漏電流和參考組相比,下降約一個數量級,接著觀察不同厚度的緩衝層對於元件電性的影響,發現隨著氮化層厚度越厚,氧化層/氮化層之介面缺陷漸漸遠離矽基板,能有效減少平帶電壓位移、介面缺陷密度、電容遲滯等現象,可以透過調整沉積介電層的製程參數或是善用緩衝層能夠阻擋雜質原子的特性,以達到元件最佳化的目標。 | zh_TW |
dc.description.abstract | This thesis is divided into two parts. In the first part, the nitride etching-stop-layer was improved by different ALD treatments. From the GIXRD analysis, the crystallinity of the nitride layer can be improved by plasma treatment which significantly enhances the capability to resist the chemical and physical etching. The breakdown field of the nitride layer is also increased after the plasma treatment. In addition, the leakage current density can be suppressed by the TMA-treatment. In order to explain the differences in electrical properties and etching rates of the nitride layer with different ALD processes, the XPS analysis reveals that the chemical states are shifted by the TMA-treatment, resulting in a higher etching rate. In the second part, the ALD technique was used to deposit high-k gate dielectrics in MOS capacitors. A lower the CET and leakage current was achieved by inserting the nitride layer at high-k/silicon interface, which effectively block the oxygen diffusion toward the interface to form the interfacial layer during the post-metal annealing process. Next, the effect of the buffer layer with different thickness on electrical properties was studied. Although the shift of the flat-band voltage, interfacial state density and hysteresis of the MOS capacitors with nitride buffer layers are slightly higher than those without the nitride buffer layer, the interface trap would keep away from the silicon substrate with increasing the thickness of the nitride layer. Therefore, the electrical properties such as the shift of flat-band voltage、interfacial state density and hysteresis can be further improved by the buffer layer to effectively block the oxygen diffusion, along with the optimization of ALD conditions. | en |
dc.description.provenance | Made available in DSpace on 2021-06-17T04:29:06Z (GMT). No. of bitstreams: 1 ntu-107-R05527069-1.pdf: 5540005 bytes, checksum: 931567cbccd4ebef2bb85ac700ff90c7 (MD5) Previous issue date: 2018 | en |
dc.description.tableofcontents | 致謝............................................................................................................I
摘要...........................................................................................................II Abstract...................................................................................................III 目錄..........................................................................................................IV 圖目錄......................................................................................................VI 表目錄…………………………………………………………………..IX 第一章 簡介 1 1.1 研究動機 1 1.2 原子層沉積技術(ALD) 3 1.2.1 原子層沉積技術 3 1.2.2 電漿輔助原子層沉積技術 6 1.3 高介電係數(High-k)材料 9 1.4 量測儀器簡介 11 1.4.1 X光光電子能譜儀(X-ray Photoemission Spectroscopy) 11 1.4.2 橢圓偏光儀(Spectroscopic Ellipsometer, SE) 12 1.4.3 低掠角X光繞射(Grazing Incident X-Ray Diffraction) 13 1.5 論文導覽 14 第二章 調整原子層沉積製程參數改善氮化物薄膜做為蝕刻終止層之性質………………………………………………………………….. 16 2.1 簡介 16 2.2 實驗步驟 17 2.2.1 前驅物介紹 18 2.3 實驗結果與討論 19 2.3.1 建立Plasma mode標準組製程參數 19 2.3.2 觀察不同ALD處理是否能夠提高氮化物薄膜折射率 22 2.3.3 透過電漿處理提高氮化物薄膜折射率 25 2.3.4 挑選出較高折射率的參數做電性的比較 30 2.3.5 挑選出較高折射率的參數做蝕刻率的比較 32 2.4 從折射率變化觀察到氮化物水解衰退的狀況 37 2.5 結論 42 第三章 成長氮化物作為高介電係數材料金氧半電容元件緩衝層之研究…………………………………………………………………….. 43 3.1 簡介 43 3.2 實驗步驟 45 3.2.1 前驅物介紹 48 3.3 實驗結果與討論 49 3.3.1 氮化鋯做為二氧化鋯介電層緩衝層之電容元件電性分析 49 3.3.2 氮化鉿做為二氧化鉿介電層緩衝層之電容元件電性分析 54 3.3.3 XPS化學鍵結分析 58 3.4 結論 60 第四章 總結 61 | |
dc.language.iso | zh-TW | |
dc.title | 利用原子層沉積技術成長氮化物蝕刻終止層與閘極介面層之研究 | zh_TW |
dc.title | Atomic Layer Deposition of Nitride for Interlayer on High-k Gate Stack and Etch-stop Layers | en |
dc.type | Thesis | |
dc.date.schoolyear | 106-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 李峻霣,吳肇欣,廖洺漢 | |
dc.subject.keyword | 原子層沉積技術,蝕刻終止層,電漿處理,高介電係數閘極介電層,緩衝層, | zh_TW |
dc.subject.keyword | atomic layer deposition(ALD),etching-stop-layer,plasma treatment,high-k gate dielectric,buffer layer, | en |
dc.relation.page | 70 | |
dc.identifier.doi | 10.6342/NTU201802662 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2018-08-13 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
顯示於系所單位: | 材料科學與工程學系 |
文件中的檔案:
檔案 | 大小 | 格式 | |
---|---|---|---|
ntu-107-1.pdf 目前未授權公開取用 | 5.41 MB | Adobe PDF |
系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。