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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 王暉(Huei Wang) | |
dc.contributor.author | Yi-Ching Wu | en |
dc.contributor.author | 吳依靜 | zh_TW |
dc.date.accessioned | 2021-06-17T03:33:03Z | - |
dc.date.available | 2018-03-02 | |
dc.date.copyright | 2018-03-02 | |
dc.date.issued | 2018 | |
dc.date.submitted | 2018-02-13 | |
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Wang, “A W-band high LO-to-RF isolation triple cascode mixer with wide IF bandwidth,” IEEE Trans. Microw. Theory Techn., vol. 62, no. 7, pp.1506-1514, July 2014. [7] H. Ashoka and R. S. Tuckers, “Mode of operation in dual-gate MESFET mixers,” Electron Lett., vol. 19, no. 11, pp.428-429, May 1983. [8] W.-T. Li, H.-Y. Yang, Y.-C. Chiang, J.-H. Tsai, M.-H. Wu, and T.-W. Huang, “A 453µW 53-70 GHz ultra-low-power double-balanced source-driven mixer using 90nm CMOS technology,” IEEE Trans. Microw. Theory Techn., vol. 61, no. 5, pp. 1903-1912 May. 2013. [9] Mingquan Bao, Harald Jacobsson, Lars Aspemyr, Geert Carchon, and Xiao Sunt, “A 9-31 GHz subharmonic passive mixer in 90-nm CMOS technology,” IEEE J. Solid-State Circuits, vol. 41, no. 10, pp. 2257-2264, Oct. 2006. [10] H.-Y. Yang, J.-H. Tsai, C.-H. Wang, C.-S. Lin, W.-H. Lin, K.-Y. Lin, T.-W. Huang, and H. Wang, “Design and analysis of a 0.8-77.5 GHz ultra-broadband distributed drain mixer using 0.13µm CMOS technology,” IEEE Trans. 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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/69898 | - |
dc.description.abstract | 本論文呈現混頻器 (Mixer) 於單晶微波積體電路 (MMICs) 在互補金屬氧化物半導體 (CMOS) 的研究與實現以及應用。本論文內容可分為三部分:分別為混頻電晶體在不同偏壓區域及不同本地振盪源 (Local Oscillator) 饋入方式的探討與分析、一個應用於天文觀測的寬頻降頻混 頻器,和一個在 E 頻段高轉換增益低功號的降頻混頻器。
首先是介紹利用不同偏壓造成混頻電晶體呈現不一樣的非線性特性,來進行混頻。同時,探討,如果饋入的本地振盪源訊號及輸入訊號的饋入方式不同時,對於混頻的特性表現在: 轉化增益、需要的本地振盪源訊號大小、線性度等指標的量化與研究。接著,第一個討論的電路是,一個以 90 奈米 CMOS 技術實現超寬頻本地振盪源同時擁有超寬頻中頻訊號 (Intermediate Frequency) 特性的降頻混頻器。本文所提出的創新結構,有別於以往論文發表的架構,可以讓混頻器在不止一種電晶體尺寸的組合下,有非常寬頻的特性,並且有低功耗、高輸入之輸入 1-dB 增益壓縮點 (IP1dB)。此電路之晶片面積為0.389mm^2,在 1.2 V 供應電壓下,靜態直流功耗為 0.6 毫瓦,動態直流功耗為 2.2 毫瓦。本地振盪源訊號的功率為 2.3−4.2 dBm。本地振盪源頻率的頻寬為 30-90 GHz,比例頻寬為 100%。本電路在本地振盪源的頻率為 30 GHz 時,使用的本地振盪源功率為 2.3 dBm,達到的轉化損耗為 7.7±1.5dB,中頻訊號的 3-dB 頻寬為 26 GHz; 在本地振盪源的頻率為 40 GHz 時,使用的本地振盪源功率為 2.3 dBm,達到的轉化損耗為 9±1.5dB,中頻訊號的 3-dB 頻寬為 22 GHz; 在本地振盪源的頻率為 50 GHz 時,使用的本地振盪源功率為 2.6 dBm,達到的轉化損耗為 7.6±1.5dB,中頻訊號的 3-dB 頻寬為 21 GHz; 在本地振盪源的頻率為 60 GHz 時,使用的本地振盪源功率為 2.6 dBm,達到的轉化損耗為 10.1±1.5dB,中頻訊號的 3-dB 頻寬為 23 GHz; 在本地振盪源的頻率為 90 GHz 時,使用的本地振盪源功率為 4.2 dBm,達到的轉化損耗為8.7±1.5dB,中頻訊號的 3-dB 頻寬為 16 GHz。本電路的輸入 1-dB 增益壓縮點,在本地振盪源的頻率為 30 GHz 時為 3 dBm; 在本地振盪源的頻率為 60 GHz 時為 2 dBm; 在本地振盪源的頻率為 90 GHz 時至少為 2 dBm。由這些特性可得知,此混頻器為超寬頻本地振盪源同時擁有超寬頻中頻訊號,且在直流功耗和輸入 1-dB 增益壓縮點都有好的表現。 本論文第二個討論的電路是以 90 奈米 CMOS 技術實現一E 頻段高轉換增益低功號的次諧波降頻混頻器。次諧波混頻器的轉換增益表現往往不如基頻混頻機制的轉換增益好,本電路利用交叉注入本地振盪源與訊號源進入混頻電晶體且弱反轉層的電流特性搭配 IF 正反器,達到高轉換增益、低功耗及低本地振盪源功耗的表現。此次諧波混頻器注入本地振盪源功耗為 −4 dBm,在射頻 (Radio Frequency) 頻率 70-88 GHz,轉換增益為 5-9 dB。此電路之晶片面積為 0.32 mm^2 。在 1.2 V 供應電壓下,其整體動態直流功耗只有5 毫瓦。此混頻器,在 E 頻段下成功實現高轉換增益且低功耗的特性。 此論文對於混頻器做一系列詳細的探討與論述。藉由不同的本地振盪源饋入方式,結合起來的電晶體混頻架構,可以達到寬頻的特性或是高轉換增益低消耗功耗的效能。由於此論文設計的混頻器內有使用到的不平衡轉平衡器 (Balun) 及變壓器 (Transformer),本論文也有介紹此兩種常用的被動電路的設計與匹配說明。 | zh_TW |
dc.description.abstract | This dissertation presents the research and implementations of mixers on CMOS monotonic microwave integrated circuits (MMICs). The dissertation is categories into three parts: discussion of a mixing device operated in the different biased region and applied in the different injecting LO and RF, a LO 30-90 GHz wideband IF mixer, and a high conversion gain with low LO power and low dc power consumption sub-harmonic E-band mixer.
The mixing device operated in the different biased region and applied in different injecting LO and RF is introduced in the beginning. In order to comprehend the characteristics of mixing function, the complete analysis and simulated results are presented in this part. Then, a LO 30-90 GHz wideband IF mixer fabricated in a standard 90-nm CMOS technology is presented. By using a novel topology, the proposed mixer demonstrates 3-dB IF bandwidth 26 GHz at LO 30 GHz, 3-dB IF band- width 22 GHz at LO 40 GHz, 3-dB IF bandwidth 21 GHz at LO 50 GHz, 3-dB IF bandwidth 23 GHz at LO 60 GHz, and 3-dB IF bandwidth 16 GHz at LO 90 GHz. The LO fractional bandwidth is 100%. LO power is 2.3 ∼ 4.2 dBm. IP1dB is at least 2 dBm. The conversion loss is from 7.6 to 10.1 dB. The chip size occupies 0.389 mm^2. The dc power consumption is 2.2 mW at a supply voltage of 1 V. Next, a high conversion gain with low LO power and low dc power con-sumption sub-harmonic E-band mixer in a standard 90-nm CMOS technol-ogy is designed and studied. The proposed sub-harmonic mixer demonstrates conversion gain 5.3 ∼ 9 dB with LO power −4 dBm at RF 70-88 GHz. The dc power consumption with LO pumping is 5 mW. The chip size occupies 0.3195 mm^2. By using weak-inversion bias technique and the combination of LO gate-pumped and source-pumped operation, this mixer features high con-version gain with low LO power and low dc power consumption in E-band. In this dissertation, the mixers are investigated and the realizations of balun and transformer are also studied and discussed. | en |
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dc.description.tableofcontents | 致謝 i
中文摘要 iii Abstract v Contents vii List of Figures xi List of Tables xxvii Chapter 1 Introduction 1 1.1 Motivation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.2 Literature Survey . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1.2.1 The Characteristics of Mixing Device in Different Bias Regions Under LO Gate-, Source-, and Drain-pumped Operations . . . . . 2 1.2.2 Broadband LO and IF Mixers . . . . . . . . . . . . . . . . . . . 3 1.2.3 High Conversion Gain with Low Power of Double-balanced Sub-harmonic Mixers . . . . . . . . . . . . . . . . . . . . . . . . . . 7 1.3 Contributions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 1.3.1 The Analysis of Mixing Device Characteristics in Different Bias Regions Under LO Gate-, Source-, and Drain-pumped Operations 11 1.3.2 Broadband LO and IF Mixer . . . . . . . . . . . . . . . . . . . . 12 1.3.3 High Conversion Gain with Low Power of Double-balanced Sub-harmonic Mixer . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 1.4 Dissertation Organization . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Chapter 2 The Characteristics of Single Mixing Transistor in Different Bias Regions with LO Gate-, Source-, and Drain-pumped Operations 15 2.1 Characteristics of single mixing transistor . . . . . . . . . . . . . . . . . 16 2.2 Comparisons of the Darlington Cell Mixing Core and Single Mixing Tran-sistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 2.3 Innovation of Mixer Circuit Topologies . . . . . . . . . . . . . . . . . . 24 2.3.1 Broadband LO and IF Mixer . . . . . . . . . . . . . . . . . . . . 24 2.3.2 High Conversion Gain and Low Power Mixer . . . . . . . . . . . 27 2.4 Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Chapter 3 A Novel 30-90 GHz Singly Balanced Mixer with Broadband LO and IF for the Astronomical Application in 90 nm CMOS Process 31 3.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 3.2 Broadband LO and IF Mixer Design . . . . . . . . . . . . . . . . . . . . 37 3.2.1 Design of Mixing Core . . . . . . . . . . . . . . . . . . . . . . . 39 3.2.2 Design of Marchand Balun . . . . . . . . . . . . . . . . . . . . . 83 3.2.3 Simulation of Singly Balanced Mixer . . . . . . . . . . . . . . . 92 3.3 Experimental Results . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102 3.3.1 Measurement Setups . . . . . . . . . . . . . . . . . . . . . . . . 104 3.3.2 Measured Results . . . . . . . . . . . . . . . . . . . . . . . . . . 104 3.4 Discussion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113 3.4.1 Bias Issue . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118 3.4.2 Thermal Issue . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118 3.4.3 Process Variation Issue . . . . . . . . . . . . . . . . . . . . . . . 118 3.5 Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123 Chapter 4 An E-band Double-balanced Sub-harmonic Mixer with High Conversion Gain and Low Power in 90-nm CMOS Process 125 4.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125 4.2 E-band Mixer Design . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 4.2.1 Design of Mixing Core . . . . . . . . . . . . . . . . . . . . . . . 130 4.2.2 Consideration of oscillating phenomenon . . . . . . . . . . . . . 154 4.3 Experimental Results . . . . . . . . . . . . . . . . . . . . . . . . . . . . 154 4.3.1 Measurement Setups . . . . . . . . . . . . . . . . . . . . . . . . 156 4.3.2 Measured Results . . . . . . . . . . . . . . . . . . . . . . . . . . 157 4.4 Discussion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165 4.4.1 Bias Issue . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167 4.4.2 Thermal Issue . . . . . . . . . . . . . . . . . . . . . . . . . . . . 169 4.4.3 Process Variation Issue . . . . . . . . . . . . . . . . . . . . . . . 169 4.5 Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172 Chapter 5 Conclusions 173 Chapter A The Characteristics of Single Mixing Transistor in Different Bias Regions with LO Gate-, Source-, and Drain-pumped Operations 175 A.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175 A.2 RF frequency of 5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . 177 A.2.1 LO gate-pumped operation for RF frequency of 5 GHz . . . . . . 177 A.2.2 LO source-pumped operation for RF frequency of 5 GHz . . . . . 182 A.2.3 LO drain-pumped operation for RF frequency of 5 GHz . . . . . 186 A.3 Discussion of RF frequency 5 GHz . . . . . . . . . . . . . . . . . . . . . 189 A.4 RF frequency of 24 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . 189 A.4.1 LO gate-pumped operation for RF frequency of 24 GHz . . . . . 189 A.4.2 LO source-pumped operation for RF frequency of 24 GHz . . . . 194 A.4.3 LO drain-pumped operation for RF frequency of 24 GHz . . . . . 198 A.5 Discussion of RF frequency 24 GHz . . . . . . . . . . . . . . . . . . . . 204 A.6 RF frequency of 60 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . 206 A.6.1 LO gate-pumped operation for RF frequency of 60 GHz . . . . . 206 A.6.2 LO source-pumped operation for RF frequency of 60 GHz . . . . 210 A.6.3 LO drain-pumped operation for RF frequency of 60 GHz . . . . . 214 A.7 Discussion of RF frequency 60 GHz . . . . . . . . . . . . . . . . . . . . 222 A.8 RF frequency of 90 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . 223 A.8.1 LO gate-pumped operation for RF frequency of 90 GHz . . . . . 223 A.8.2 LO source-pumped operation for RF frequency of 90 GHz . . . . 228 A.8.3 LO drain-pumped operation for RF frequency of 90 GHz . . . . . 232 A.9 Discussion of RF frequency 90 GHz . . . . . . . . . . . . . . . . . . . . 239 A.10 Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240 Bibliography 241 List of Publications 249 Refereed Journal Papers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 249 Refereed Conference Papers . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 | |
dc.language.iso | en | |
dc.title | 毫米波寬頻混頻器及高增益低功耗之次諧波混頻器研究 | zh_TW |
dc.title | Research of Millimeter-wave Broadband Mixer and High
Conversion Gain with Low LO Power and Low dc Power Consumption of Sub-harmonic Mixer | en |
dc.type | Thesis | |
dc.date.schoolyear | 106-1 | |
dc.description.degree | 博士 | |
dc.contributor.oralexamcommittee | 黃天偉(TIAN-WEI HUANG),蔡作敏(Zuo-Min Tsai),蔡政翰(Cheng-Han Tsai),章朝盛(Chau-Ching Chiong),林坤佑(Kun-You Lin) | |
dc.subject.keyword | 互補金屬氧化物半導體,混頻器,寬頻,高轉換增益,低功耗,高線性度, | zh_TW |
dc.subject.keyword | CMOS,mixer,wideband LO,wideband IF,high conversion gain,low dc and low LO power,high linearity, | en |
dc.relation.page | 250 | |
dc.identifier.doi | 10.6342/NTU201800551 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2018-02-13 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電信工程學研究所 | zh_TW |
顯示於系所單位: | 電信工程學研究所 |
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