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標題: | 極紫外至紅外光波段低耗能鉭/矽基光偵測器之研究 Study of Tantalum /Silicon -based Photodetectors Working from Extreme Ultraviolet to Infrared Regime with Low Power Consumption |
作者: | Chih-Kai Wang 王致凱 |
指導教授: | 陳學禮 |
關鍵字: | 極寬波段,光偵測器,鉭,氮化鉭,光導體,蕭特基二極體,極紫外光,可見光,近紅外光,低耗能,自由載子吸收,熱載子, ultrabroadband,photodetector,tantalum,tantalum nitride,photoconductor,Schottky photodiode,extreme ultraviolet light,visible light,near-infrared light,low-power consumption,free carrier absorption,hot carriers, |
出版年 : | 2017 |
學位: | 碩士 |
摘要: | 本論文主要討論鉭/矽基之光偵測器操作於紅外光波段、可見光波段至極紫外光波段之光學性質以及光電響應率。由於矽基光偵測器由於可適用以矽半導體製程技術 (Silicon-Complementary Metal-Oxide-Semiconductor, Si-CMOS)製作,因此在低成本大量製造上占有相當大的優勢。在矽基板能夠本質吸收的波段,也就是極紫外光至可見光波段,矽基光偵測器被廣泛地使用。若超過矽基板本質吸收之偵測波段,也就是近紅外光波段,可用金半接面矽基光偵測器,利用內部激發熱載子機制來偵測。本論文對上述極寬波段利用設計特定光學吸收結構來達到更好之偵測效益。
論文第一部分主要研究極紫外光偵測之元件,極紫外光的使用與偵測為未來半導體製造工業相當熱門之研究領域,我們所使用之材料氮化鉭為能夠於半導體製程整合之材料,若搭配深溝槽倒錐結構在可見光波段具有寬波段抗反射結構,而在極紫外光波段則能夠增加有效蕭特基接面以增益於極紫外光波段之偵測效率。我們進一步地將所製作之元件於近紅外光波段甚至是中紅外光波段進行操作。最後由於氮化鉭材料之光學特性以及搭配我們所設計之光學奈米結構。使我們成功地製做出一個操作波長於13.5 nm-10.6 m極寬波段工作之元件。以電流模式在不外加任何偏壓下操作得到在波長為13.5 nm之光電響應率為0.1255 A/W。此外,本論文為第一個提出於13.5nm之波長以電壓模式操作之元件,量測到了約481.91 V/W之高光電響應率。同時對於不同入射強度之極紫外光,所製作出來之元件能夠偵測到先進極紫外光微影製程所使用之曝光能量密度倍強度的光,此展現了優異的弱光偵測能力。因此若能整合於矽半導體元件製程中,應能以大量製造的方式得到低成本、低耗能、高靈敏度之極紫外光偵測器。 論文第二部分我們以氮化鉭薄膜深溝槽結構元件針對近紅外光通訊波段利用背面照射式之操作,以達到更高之載子收集效率。在第一部分中我們發現通氮氣較多的製程所製作出之氮化鉭薄膜具有較多之氮(N)空缺,而較多N空缺則會增加其載子濃度,在近紅外光波段操作時,利用自由載子吸收之機制提升此材料在近紅外光波段之吸收,則能達到高光電響應率。我們利用其材料之光學特性搭配深溝槽結構製作出一個在光通訊波段波長為1310 nm、1550nm之電壓光電響應率分別為R=17.89 V/W、17.11 V/W之高效率近紅外光偵測元件。此外我們元件若考慮暗電流密度,因為該氮化鉭元件之暗電流較低,則我們得到元件之光檢測率約為1010 Jones。 論文第三部分為近紅外光通訊波段之鉭金屬薄膜光導體元件之開發,我們利用鉭金屬之低導熱的材料特性以及紅外光波段吸收之光學特性來展現負光導現象。再搭配深溝槽結構之設計使得特定波段之負光導現象更加顯著。其元件能夠對於通訊波段有不同於一般光二極體形式偵測器之偵測模式,因此藉由負光導之特性能夠使元件之偵測波段不限制於一般傳統蕭特基元件之能障限制,所開發出新的用於通訊波段之元件,對於不同能量密度之偵測亦能有相當良好之敏感度,其光強度偵測線性度於1200nm、 1310 nm、1550nm 分別為0.9267、0.977、0.9561。最後我們成功製作出,能夠於通訊波段偵測之元件。 In this thesis, we discuss the optical properties and photo-to-electrical responsivity of tantalum(Ta)/silicon (Si)-based photodetectors working from extreme ultraviolet (EUV) to infrared (IR) regime. Since Si-based phototdetectors are compatible with the processes of silicon-complementary metal-oxide-semiconductor (Si-CMOS), they take advantages of mass production with low cost. Si-based photodetectors have been widely used within the regime of Si possessing intrinsic absorption, this is, the spectral regime from EUV to visible light. If the detection regimes are beyond the silicon substrate intrinsic absorption regime, that is, the IR regime, the researches nowadays pay much attention on the topics of metal/ silicon-based semiconductors whose operating mechanism are induced hot carriers by incident light. We designed specific optical absorpstion structures to achieve high detection efficiency. In the first part of the thesis, we focus on the the device which can detect EUV light. Tantalum nitride (TaN) is fully compatible in mature CMOS manufacture processes. Here TaN films equipped with inverse-cone deep-trench structures performing broadband antireflection have been successfully demonstrated the concept of increasing effective junction area in order to achieve higher efficiency in photodetection. We further put the TaN device in the photodetetection experiment from near infrared (NIR) to mid infrared (MIR) regime. We successfully combine the TaN material properties with the designed textured structures to make the device can operate in ultra-broadband regime from 13.5 nm (EUV) to 10.6 m (MIR). In the photocurrent mode of detection, the photoresponsivity is 0.1255 A/W at the wavelength of 13.5 nm. Furthermore, we first proposed the operation mode of photovoltage at the wavelength of 13.5 nm. The measured photoresponsivity of the device in voltage mode reach 481.9 V/W. In the mean time, we focus on the study of EUV detection with various light power intensities and the device present excellent low light detection capability. It is capable of detecting times of power density lower than that used in the modern extreme ultraviolet photo-lithography (EUVL). Hence, if the photodetector proposed in the reaerch can be integrated into the process of Si-CMOS, the EUV photodetector with low costs, low power consumption and high sensitivity will be capable of mass production. In the second part of the thesis, we focus on the detection at optical telecommunication wavelengths using deep trenched TaN film based device with backside illumination that can achieve high carrier collection efficiency. We also found that there are lots N vacncies in the N-riched TaN film with high free carrier concentrations. Being higher carrier concentrations of TaN films lead to higher absortion and higher photoresponsivity in the NIR regime. With the aids of material’s optical properties and nanostructures, we proposed a high photoresponsivities device TaN based device, the measured photovoltages are 17.89 and 17.11 V/W at the wavelength of 1310 nm and 1550 nm, respectively. Furthermore, if we take the dark current density into consideration, the device performs a high detectivity of ca.1010 Jones. In the third part of the thesis, we propsed a deep trenched Ta based photoconductor for the detection of IR light for optical telecommunication. We utilize the low thermal conductivity and the suitable optical properties of Ta in NIR regime to present the negative photoconductivity effect. By adding the deep trench structures, the negative photoconductivity effect of Ta based device is enhanced significantly. The operating mechanism of photoconductor is quite different from the commom photodiode. Hence, wihout the limt of barrier height, we expect the Ta based photoconductor can operate in IR regime. By illuminating the light with various power density, we observed the device is highly sensitive to light power intensity with high linearity at the wavelengths of in 1200 nm, 1310 nm and 1550 nm. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/68149 |
DOI: | 10.6342/NTU201704423 |
全文授權: | 有償授權 |
顯示於系所單位: | 材料科學與工程學系 |
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