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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 吳肇欣(Chao-Hsin Wu) | |
dc.contributor.author | Hsuan-Yun Kao | en |
dc.contributor.author | 高選昀 | zh_TW |
dc.date.accessioned | 2021-06-17T02:12:56Z | - |
dc.date.available | 2019-03-02 | |
dc.date.copyright | 2018-03-02 | |
dc.date.issued | 2017 | |
dc.date.submitted | 2017-12-13 | |
dc.identifier.citation | 1. P. Westbergh, E. P. Haglund, E. Haglund, R. Safaisini, J. S. Gustavsson and A. Larsson, “High-speed 850 nm VCSELs operating error free up to 57 Gbit/s,” Electron. Lett., vol. 49, no. 16, pp. 1021-1023, Aug. 2013.
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Lin,, “RIN Suppressed Multimode 850-nm VCSEL for 56-Gbps 16-QAM OFDM and 22-Gbps PAM-4 Transmission,” presented at the Optical Fiber Communication Conf., Anaheim, CA, USA, 2016, Paper Th4D.2. 7. H. E. Li and K. Iga, 'Vertical-Cavity Surface-Emitting Laser Devices, vol. 6. Berlin, Germany: Springer, 2003. 8. D. M. Kuchta, A. V. Rylyakov, C. L. Schow, J. Proesel, C. Baks, P. Westbergh, J. S. Gustavsson, and A. Larsson, “64Gb/s transmission over 57m MMF using an NRZ modulated 850nm VCSEL,” presented at the Optical Fiber Communication Conf., San Francisco, CA, USA, Mar. 2014, Paper Th3C. 2. 9. P. Westbergh, R. Safaisini, E. Haglund, B. Kögel, J.S. Gustavsson, A. Larsson, M. Geen, R. Lawrence and A. Joel, “High-Speed 850 nm VCSELs with 28 GHz modulation bandwidth operating error-free up to 44 Gbit/s,” Electron. Lett., vol. 48, no. 18, pp. 1145–1147, Aug. 2012. 10. E. Haglund, Quasi-Single Mode VCSELs for Longer-Reach Optical Interconnects (Chalmers, 2013). 11. G. O. III, Y. Sun, D. S. 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Bimberg, “Energy-efficient oxide-confined high-speed VCSELs for optical interconnects,” Proc. SPIE Vertical-Cavity Surface-Emitting Lasers XVIII, vol. 9001, pp. 9001103–1–9001103-8, Feb. 2014. 16. P. Moser, J. Lott, P. Wolf, G. Larisch, H. Li, N. Ledentsov, and D. Bimberg, “Impact of the aperture diameter on the energy efficiency of oxide-confined 850 nm high speed VCSELs,” Proc. SPIE, vol. 8639, pp. 86390V-1–86390V-8, Mar. 2013. 17. J. A. Lott, A. S. Payusov, S. A. Blokhin, P. Moser, N. N. Ledentsov, and D. Bimberg, “Arrrays of 850 nm photodiodes and vertical cavity surface emitting lasers for 25 to 40 Gbit/s optical interconnects,” Phys. Status Solidi C, vol. 9, no. 2, pp. 290–293, Nov. 2011. 18. M. P. Tan, S. T. M. Fryslie, J. A. Lott, N. N. Ledentsov, D. Bimberg, and K.D.Choquette, “Error-Free transmission over 1-km OM4 multimode fiber at 25 Gb/s using a single mode photonic crystal vertical-cavity surface-emitting laser,” IEEE Photon. Technol. 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Hughes, “Zn diffusion-induced disorder in AlAs/GaAs superlatttices,” Semiconduct. Sci. Technol., vol. 4, pp. 841–846, 1989. 24. J.-W. Shi, C.-C. Chen, Y.-S. Wu, S.-H. Guol, and Y.-J. Yang, “High power and high-speed Zn-diffusion single fundamental-mode vertical cavity surface-emitting lasers at 850 nm wavelength,” IEEE Photon. Technol. Lett., vol. 20, no. 13, pp. 1121–1123, Jul. 2008. 25. N. Suzuki, H. Hatakeyama, K. Fukatsu, T. Anan, K. Yashiki, and M. Tsuji, “25-Gbps operation of 1.1-µm-range InGaAs VCSELs for high-speed optical interconnections,” presented at the Optical Fiber Communication Conf., Anaheim, CA, USA, 2006, Paper OFA4. 26. W. Hofmann, N. H. Zhu, M. Ortsiefer, G. Bohm, J. Rosskopf, L. Chao, S. Zhang, M. Maute, and M. C. Amann, “10-Gb/s data transmission using BCB passivated 1.55 µm InGaAlAs-InP VCSELs,” IEEE Photon. Technol. Lett., vol. 18, no. 2, pp. 424–426, Jan. 2006. 27. P. Moser, J. A. Lott, and D. Bimberg,” Energy Efficiency of Directly Modulated Oxide-Confined High Bit Rate 850-nm VCSELs for Optical Interconnects,” IEEE J. Sel. Top. Quantum Electron. 19, 1702212 (2013). 28. K. SZczerba, P. Westbergh, M. Karlsson, P. A. Andrekson, A. Larsson,” 60 Gbits error-free 4-PAM operation with 850 nm VCSEL,” Electron. Lett. 49, 953 (2013). 29. J. M. Castro, R. Pimpinella, B. Kose, Y. Huang, Brett lane, A. A. Correa, M. Bigot, D. Molin, and P. Sillard, “200m 2x50Gbps PAM-4 SWDM transmission over WideBand Multimode Fiber using VCSELs and pre-distortion signal,” in 2016 Optical Fiber Communications Conference and Exhibition, Anaheim, CA, USA, March 20-22, 2016, paper Tu2G.2 30. Y.-C. Chi, Y.-C. Li, H.-Y. Wang, P.-C. Peng, H.-H. Lu, and G.-R. Lin,“Optical 16-QAM-52-OFDM transmission at 4 Gbit/s by directly modulating a coherently injection-locked colorless laser diode,” Opt. Exp.,vol. 20, no. 18, pp. 20071–20077, Aug. 2012. 31. F. Karinou, L. Deng, R. R. Lopez, K. Prince, J. B. 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SPIE Vertical-Cavity Surface-Emitting Lasers XVIII, vol. 9001, pp. 9001103–1–9001103-8, Feb. 2014. 39. P. V. Mena, J. J. Morikuni, S. M. Kang, A. V. Harton, and K. W.Wyatt, “A simple rate-equation-based thermal vcsel model,” J. Lightwave Technol., vol. 17, no. 5, pp. 865–872, May 1999 40. M.-C. Cheng, Y.-C. Chi, Y.-C. Li, C.-T. Tsai, and G.-R Lin, “Suppressing the relaxation oscillation noise of injection-locked WRC-FPLD for directly modulated OFDM transmission,” Opt. Exp., vol. 22, no. 13, pp. 15724–15736, Jun. 2014. 41. S. E. Hashemi. Relative Intensity Noise (RIN) in High-Speed VCSELs for Short Reach Communication, Chalmers, Göteborg, 2012, pp.31-32 42. E. K. Lau, X. Zhao, H.-K. Sung, D. Parekh, C. Chang-Hasnain, and M. C. Wu, “Strong optical injection-locked semiconductor lasers demonstrating >100-GHz resonance frequencies and 80-GHz intrinsic bandwidths,” Opt. Exp., vol. 16, no. 9, pp. 6609-6618, Apr. 2008. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/68118 | - |
dc.description.abstract | 隨著行動裝置的普及,人們對於資料傳輸的需求日益增大。近年來,特別在雲端傳輸或4-K數位影音有爆炸性需求的成長。為了及時處理高流量的資料訊息交換,高速資料中心或超級電腦因而被建立。根據IEEE P802.3bs的規範,原先100 Gbit/s的規格已升級成400 Gbit/s,去滿足日益的傳輸容量需求。在本論文中,我們以垂直共振腔面射型雷射(VCSEL)作為光源,調變四階脈衝強度調變(PAM-4)及正交幅度調制 (QAM) 正交分頻多工(OFDM)格式,做為實際資料中心傳輸系統的展示。
在PAM-4傳輸系統中,我們以三種不同線寬的VCSEL為傳輸光源來進行實驗。在三種VCSEL之中,線寬最大的VCSEL(又稱多模VCSEL)擁有11微米寬的氧化孔徑、最大的光強度及最小的3-dB條變頻寬,只能達成22 GBaud及14 GBaud之PAM-4傳輸於背對背(BtB)與100-m POFC OM4多模光纖。線寬大小次之的VCSEL(又稱少模VCSEL)擁有5微米寬的氧化孔徑及較大的光訊號強度,能夠提供最高的傳輸容量為52 Gbit/s於背對被傳輸中。然而,經過100-m POFC OM4多模光纖傳輸後,受到模間色散(modal dispersion)的影響,迫使傳輸容量降至32 Gbit/。對照之下,線寬最小的VCSEL(又稱單模VCSEL)擁有3微米寬的氧化孔徑,在100-m POFC OM4多模光纖傳輸時,由於不受到模間色散(modal dispersion)的影響,因能提供最大的傳輸容量為34 Gbit/s與最小的功率代償為1.4 dB. 為了近一步提升傳輸容量,我們挑選色散效應最小的單模VCSEL,去進行預失真(pre-emphasis) PAM-4的實驗。在背對背與100-m 的OM4多模光纖的傳輸中,過預失真PAM-4的技術,單模VCSEL可以達成高達64 Gbit/s的傳輸容量。當我們繼續提升傳輸距離至200公尺及300公尺時,低頻至高頻的補償機制會使PAM-4的調變振幅減小,進而使傳輸容量縮小為52與48 Gbit/s。 接下來,我們成功展示了以16-QAM OFDM為調變格式,多模、少模、單模於100-m POFC OM4多模光纖傳輸比較。與PAM-4有相近的結果,多模VCSEL僅能達成最小傳輸容量為88及64 Gbit/s於背對背及100-m POFC OM4多模光纖的傳輸。對照之下,少模/單模的VCSEL能夠達成96/92與80/80 Gbit/s的傳輸容量。值得注意的是,經過100-m POFC OM4多模光纖傳輸後,單模VCSEL具有較低的功率代償為1.77dB。為了更提升傳輸容量,我們將原本POFC OM4多模光纖替換為Corning 的OM4多模光纖,並優化VCSEL的操作條件後,少模VCSEL能夠提升傳輸容量至100及92 Gbit/s在背對背及100-m Corning OM4多模光纖傳輸後。此外,我們使用預補償(pre-leveling)16-QAM OFDM的格式,以單模VCSEL作為光源,進行了變溫和長期穩定的傳輸測試。由於熱效應的緣故,單模VCSEL雖具需要較嚴格的操作溫度條件,但在1.5小時之內能夠保有其傳輸性能於QAM-OFDM的系統中。經過操作條件的優化後,單模VCSEL最終能提供傳輸容量皆為96 Gbit/s,於背對背及100-m100-m Corning OM4多模光纖的條件。 | zh_TW |
dc.description.abstract | To relieve explosively increased demand on data capacity from real-time media access between mobile devices and interconnection in supercomputers or data-centers, ultrahigh-speed optical interconnects is established. According to the IEEE P802.3bs standard, the currently available Ethernet frames have to upgrade its data rate from 100 to 400 Gbit/s to satisfy this drastically increased requirement. In this thesis, a transmission link based on vertical-cavity surface-emitting lasers (VCSELs) with the encoding 4-level pulse amplitude modulation (PAM-4) and quadrature amplitude modulation orthogonal frequency division multiplexing (QAM-OFDM) data is demonstrated for data center optical interconnect.
For the PAM-4 transmission, the three VCSEL chips with different spectral linewidth and transverse mode number are used as the transmitter. The VCSEL chip with the largest spectral linewidth and oxide-confined aperture of 11 m (also called multi-mode, MM VCSEL) exhibits the smallest modulation bandwidth and highest optical power which only achieved 22 GBaud and 14 GBaud over back-to-back (BtB) and 100-m POFC OM4 MMF transmission. The VCSEL chip with the smaller spectral linewidth and oxide-confined aperture of 5 m (also called few-mode, FM VCSEL) is able to support the highest transmission capacity of 52 Gbit/s due to the strongest throughput. Nevertheless, the transmission capacity still reduces to 32 Gbit/s after 100-m POFC OM4 MMF transmission owing to the induced modal dispersion. In contrast, the VCSEL chip with the smallest spectral linewidth and oxide-confined aperture of 3 m (also called single-mode, SM VCSEL) possesses an ignorable modal dispersion property and achieves a highest data rate of 34 Gbit/s with the lowest power penalty of 1.4 dB after propagating 100-m POFC OM4 MMF. As a result, the SM VCSEL chip which suffers from the lowest dispersion is selected to carry out the pre-emphasis PAM-4 experiment for achieving the higher transmission capacity. With the assist the pre-emphasis technology, the SM VCSEL chip can support the data rate as high as 64 Gbit/s for both BtB and 100-m POFC OM4 MMF transmission. By continuously lengthen the transmission distance to 200 and 300 m, the low-to-high frequency energy transformation significantly reduce the signal amplitude to limit the transmission capacities to 52 and 48 Gbit/s, respectively. Next, a comparison of MM/FM/SM VCSEL chips for QAM-OFDM transmission over 100-m POFC OM4 MMF is demonstrated. Similar to result of PAM-4 transmission, MM VCSEL chip supports the lowest data capacity of 88 and 64 Gbit/s for BtB and 100-m POFC OM4 MMF propagation, respectively. The FM/SM VCSEL chip is able to carry 96/92 and 80/80 Gbit/s in the case of BtB and 100-m POFC OM4 MMF transmission, respectively. Noted that the SM VCSEL chip with the less dispersion exhibits the lowest power penalty of 1.77 dB after POFC OM4 MMF transmission. In order to enhance the data capacity, by replacing the Corning OM4 MMF for POFC OM4 MMF and optimizing the FM VCSEL chip operating condition, the FM can further achieve the 100 and 92 Gbit/s for BtB and 100-m Corning OM4 MMF propagation. Furthermore, the thermal-dependent and long-term stability transmission performance of SM VCSEL chip with encoding pre-leveled 16-QAM OFDM modulation is demonstrated. Owing to the heat accumulation, the SM VCSEL chip exhibits a strict dependence on the operating temperature but still achieved a stable operation for at least 1.5 hours for QAM-OFDM transmission link. By optimizing the operation condition, the transmission capacities as high as 96 Gbit/s are demonstrated for pre-leveled 16-QAM OFDM link after BtB and 100-m Corning OM4 MMF transmission. | en |
dc.description.provenance | Made available in DSpace on 2021-06-17T02:12:56Z (GMT). No. of bitstreams: 1 ntu-106-R03941130-1.pdf: 5117995 bytes, checksum: c5a56bf91c1c3387c4e4a2e30ecc2be5 (MD5) Previous issue date: 2017 | en |
dc.description.tableofcontents | 口試委員會審定書 #
中文摘要.... ii ABSTRACT iv CONTENTS vi LIST OF FIGURES viii Chapter 1 Introduction 1 1.1 Overview of data-center interconnect and related standard 1 1.2 Motivation 2 1.2.1 850-nm VCSEL for Optical PAM-4 Transmission link 2 1.2.2 850-nm VCSEL for Optical QAM-OFDM Transmission link 3 1.3 Thesis architecture 4 Chapter 2 Modal linewidth Dependent Transmission Performance of 850-nm VCSELs for PAM-4 transmission 6 2.1 Basic characteristics of MM/FM/SM VCSEL chips 6 2.2 850-nm single-/few-/multi-mode VCSELs for PAM-4 Transmission over 100-m MMF 11 2.3 Beyond 50 Gbit/s Transmission of SM VCSEL chip Chip over 100-300 m OM4 MMF 18 2.4 Summary 26 Chapter 3 850-nm VCSEL chips for Optical OFDM Transmission link 29 3.1 Comparison of Multi-, Few-, and SM VCSEL chip chips for Optical OFDM Transmission 29 3.1.1 BtB-16-QAM OFDM transmission 31 3.1.2 100-m OM4 MMF-16-QAM OFDM transmission 35 3.2 Sub-Tbit/s Transmission of Few-Mode Zinc-Diffused VCSEL Chip for 100-m Multi-Mode Fiber Link 40 3.3 Thermal stability of SM VCSEL for 96-Gbit/s OFDM transmission 46 3.3.1 Output dynamics of the SM VCSEL 46 3.3.2 Thermal-dependent output dynamics and stability of the SM VCSEL chip 49 3.3.3 16-QAM OFDM data modulation based on the SM VCSEL chip 52 3.4 Summary 55 Chapter 4 Conclusion 59 REFERENCE 62 | |
dc.language.iso | en | |
dc.title | 直調850-nm垂直共振腔面射型雷射於高速資料中心之應用 | zh_TW |
dc.title | Directly modulated 850-nm VCSEL for High-speed Data center Application | en |
dc.type | Thesis | |
dc.date.schoolyear | 106-1 | |
dc.description.degree | 碩士 | |
dc.contributor.coadvisor | 林恭如(Gong-Ru Lin) | |
dc.contributor.oralexamcommittee | 鄭木海(Wood - Hi Cheng),施天從(Tien-Tsorng Shih),林俊廷(Jin-Ting Lin) | |
dc.subject.keyword | 垂直共振腔面射型雷射,資料中心, | zh_TW |
dc.subject.keyword | VCSEL,Data center, | en |
dc.relation.page | 71 | |
dc.identifier.doi | 10.6342/NTU201704156 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2017-12-14 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
顯示於系所單位: | 光電工程學研究所 |
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