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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/67855完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 吳育任 | |
| dc.contributor.author | Chao-Wei Wu | en |
| dc.contributor.author | 吳昭緯 | zh_TW |
| dc.date.accessioned | 2021-06-17T01:54:00Z | - |
| dc.date.available | 2018-08-04 | |
| dc.date.copyright | 2017-08-04 | |
| dc.date.issued | 2017 | |
| dc.date.submitted | 2017-07-23 | |
| dc.identifier.citation | Bibliography
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/67855 | - |
| dc.description.abstract | 本論文中，第一章我們會先介紹研究InN/GaN 和 GaAs/AlAs 材料
為基礎之熱電元件效率的動機。在第二章，我們介紹了使用彈性連 續模型和有限差分法建立了模擬計算聲子散射關係的模型。 此外， 我們提出的熱電元件中，波茲曼方程式和馳豫時間估計也被我們應 用於解出不同的電子和聲子散射的機制。本論文的目的是結合了電 子和聲子相關的物理特性來設計一個高效率的熱電元件。 第三章和 第四章的內容為探討在不同低維度下的奈米線結構和超晶格結構， 提供完整的熱電效率分析給元件設計者。 第三章的內容為探討低維度下的奈米線結構之熱電效率分析。本 章中，我們提出了具有粗糙表面且由InN/GaN所組成的核心和外殼 的奈米線作為有潛力的熱電元件。 核心和外殼材料在此奈米線中分 別是InN和GaN。當和InN和GaN塊狀半導體比較的時候，奈米線的 聲子侷限效應可以讓晶格熱傳導率降低。再者，在奈米線上，故意 製作粗糙的表面使得晶格熱傳導率降得更低，但因為表面費米釘效 應，此粗糙的表面並不會影響電子的導電特性。 電導率，斯貝克係 數，電熱傳導率和晶格熱傳導率都在本論文中用來計算評估此粗糙 表面之InN和GaN奈米線的熱電效率。 第四章的內容為探討低維度下的超晶格結構之熱電效率分析。在本章中，我們採用了兩個晶格常數接近的GaAs和AlAs作為超晶格奈 米結構材料。 和個別的材料比較之下，傳統的超晶格顯示了晶格熱 傳導率可以被降低。 然而，我們覺得設計一個優良的熱電元件這樣 還不夠。因此，不同於傳統的超晶格結構，我們提出了使用粗糙表 面之GaAs和AlAs奈米脊超晶格架構來進一步降低晶格熱傳導率。 有 了此奈米脊的特性，超晶格架構之表面可以故意製作粗糙，用以探 討粗糙程度對於超晶格之晶格熱傳導率的影響。 藉由在此奈米脊 中，在不影響電子的移動率，且能讓聲子遭受到此粗糙表面的影響 下，適當的選擇表面粗糙的程度，我們可以得到更低的晶格熱傳導 率。 熱電轉換效率也在此粗糙的奈米脊超晶格結構中被評估。 最後，我們對於我們的模擬設計結果做一總結，並對未來提出相 關的研發工作。 | zh_TW |
| dc.description.abstract | In thisdissertation,wepresentthemotivationofinvestigatingthether-
moelectric(TE) propertiesofthedevicesbasedonInN/GaNandGaAs/AlAs materials inChapter1.InChapter2,weintroducethesimulationalgorithm established usingtheelasticcontinuummodelandfinitedifferencemeth- ods forstudyingthephonondispersionrelation.Inaddition,theBoltz- mann transportequationsandrelaxationtimeapproximationareapplied for solvingthedifferentelectronandphononscatteringmechanismsin our proposedTEdevice.Thepurposeofthisdissertationistocombine the electronandphononrelatedphysicalcharacteristicsfordesigninga high performanceTEdevice.InChapter3and4,weexplorethelowdi- mensional nanowire(NW)andsupperlattice(SL)structuresforprovidinga complete analysisofTEconversionefficiencytothedevicedesigner. In Chapter3,weproposetheroughInN/GaNcore-shellNWsasapo- tential candidateofTEdevices.Thecoreandshellmaterialsconsideredin the NWsareInNandGaN,respectively.Wefoundthatthephononcon- finement effectsoftheNWswouldlowerthelatticethermalconductivity when comparedtothebulkInNandGaNmaterials.Moreover,thesurface of theNWswasintentionallyroughenedforreducingthethermalconductivity considerably;however,theelectricalconductivitywasmaintained owningtothesurfacefermilevelpinningeffects.Theelectricalconductiv- ity,Seebeckcoefficient,andelectronicthermalconductivityarecalculated and discussedaswellforevaluatingtheperformanceoftheroughsurface of theInN/GaNNWs. In Chapter4,westudythelowdimensionalSLstructuresasaTEde- vice. WeconsiderthenearlylatticematchedGaAsandAlAsmaterialsas SL structures.ThetraditionalSLsshowedthatlatticethermalconductiv- ity couldbereducedwhencomparedtoindividualconstituentmaterials. Nonetheless, weperceivethatitwasnotsufficientfordesigningapromi- nent TEdevice.Therefore,differentfromthetraditionalGaAs/AlAsSL structures, weproposedtheroughsurfaceofthenano-ridgeGaAs/AlAs SLs forfurtherreducingthelatticethermalconductivity.Withtheaidof the nano-ridgefeature,thesurfaceoftheSLstructurescouldbeinten- tionally roughenedforexploringthesurfaceroughnesseffectsoftheSL structures. Byselectingasuitabledegreeofroughnessforthenano-ridge SL structuresurface,wecanobtainconsiderablylowerlatticethermalcon- ductivitywithoutreducingtheelectronmobility.Theperformanceofthe rough nano-ridgeSLstructureisevaluated. Finally,weconcludewithoursimulationresultsandproposesomefu-ture studies. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-17T01:54:00Z (GMT). No. of bitstreams: 1 ntu-106-D98941009-1.pdf: 2733873 bytes, checksum: c833278d093a0d040c9ba3acbe796b62 (MD5) Previous issue date: 2017 | en |
| dc.description.tableofcontents | CONTENTS
口試委員會審查表 . . ........................i 誌謝 . .................................ii 摘要 . .................................iii ABSTRACT..............................v CONTENTS ..............................viii LIST OF FIGURES..........................xi LIST OF TABLES..........................xix 1 Introduction............................1 1.1 Some History........................1 1.1.1 Seebeck effect...................2 1.1.2 Peltier effect....................3 1.1.3 Thomson effect...................4 1.1.4 TE applications...................5 1.2 Thermoelectric Efficiency..................8 1.3 Reviews of Thermoelectric Technologies..........9 1.3.1 Strategy to enhance figure of merit ZT.......9 1.3.2 The TE materials selection.............12 1.4 Fundamental Physics of Thermoelectric Device......16 1.5 Thesis Overview......................18 2 Formulas..............................21 2.1 Methods for Modeling Lattice Thermal Conductivity...21 2.1.1 Elastic continuum model for core-shell nanowires.24 2.1.2 One dimensional elastic continuum model for SLs 27 2.1.3 Two dimensional elastic continuum model for SLs 30 2.1.4 Phonon scattering mechanisms...........33 2.2 Methods for modeling electrical conductivity, Seebeck coefficient, and electronic thermal conductivity........35 2.2.1 Calculation for electron dispersion relation....37 2.2.2 Electronic scattering mechanisms.........38 2.3 Flow Chart for Calculating Thermoelectric Related Parameters .............................42 3 Thermoelectric characteristics of rough InN/GaN core-shell nanowires 47 3.1 Introduction.........................47 3.2 Results and Discussions...................48 3.3 Summary..........................58 4 Optimization of thermoelectric properties for rough nano-ridge GaAs/AlAs superlattices.....................60 4.1 Introduction.........................60 4.2 Results and Discussions...................62 4.2.1 Design of electron miniband structures for super- lattice structures..................63 4.2.2 Calculation of thermal conductivity in bulk super- lattice structures without nano-ridge structure and comparison to experimental results........66 4.2.3 Finding the optimal configuration of the nano-ridges superlattice structure................67 4.2.4 Reducing kph by surface roughness scattering in nano-ridge superlattice structures.........73 4.2.5 Calculation of electrical conductivity σ, Seebeck coefficient S, electronic thermal conductivity ke, and ZT.......................77 4.3 Summary..........................83 5 Conclusion.............................85 Bibliography.............................87 Appendices ..............................102 .1 Finite difference equations for core-shell NWs.......103 .2 Finite difference equations for one dimensional SLs....105 .3 Finite difference equations for two dimensional SLs....107 | |
| dc.language.iso | en | |
| dc.subject | 奈米線 | zh_TW |
| dc.subject | 熱電 | zh_TW |
| dc.subject | 超晶格 | zh_TW |
| dc.subject | 最佳化 | zh_TW |
| dc.subject | Thermoelectric | en |
| dc.subject | Nanowire | en |
| dc.subject | Superlattice | en |
| dc.subject | Optimization | en |
| dc.title | 低維度熱電元件最佳化設計與分析 | zh_TW |
| dc.title | Optimization of Low Dimensional Thermoelectric Device Design and Analysis | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 105-2 | |
| dc.description.degree | 博士 | |
| dc.contributor.oralexamcommittee | 吳肇欣,陳奕君,溫政彥,黃美嬌,余沛慈 | |
| dc.subject.keyword | 熱電,奈米線,超晶格,最佳化, | zh_TW |
| dc.subject.keyword | Thermoelectric,Nanowire,Superlattice,Optimization, | en |
| dc.relation.page | 109 | |
| dc.identifier.doi | 10.6342/NTU201701807 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2017-07-24 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
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