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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 李嗣涔 | |
| dc.contributor.author | Po-Yen Chang | en |
| dc.contributor.author | 張博彥 | zh_TW |
| dc.date.accessioned | 2021-06-17T01:26:28Z | - |
| dc.date.available | 2017-08-20 | |
| dc.date.copyright | 2017-08-20 | |
| dc.date.issued | 2017 | |
| dc.date.submitted | 2017-08-07 | |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/67284 | - |
| dc.description.abstract | 本論文先對黑磷的基本性質做了材料分析。透過光光學顯微鏡及原子力顯微鏡的搭配可以粗略的判斷黑磷薄片的厚度，拉曼光譜儀則能夠用來辨認黑磷薄片的晶體方向。原子力顯微鏡和X射線光電子能譜儀可用來觀察當黑磷暴露在大氣下時，其表面的變化。
透過製程的改良，成功的製造出擁有良好元件特性的背電極黑磷薄膜電晶體。透過選擇適當的黑磷薄片厚度和使用適當的退火條件，元件可以表現出超過400cm2/V*s的場效電子遷移率和高達3個數量級的電流開關比。然而，傳統上使用300奈米二氧化矽做為介電層的背電極黑磷薄膜電晶體，其過大的次臨界擺服和較差的穩定性大大的限制了元件的應用。本論文使用上電極結構和較高介電系數的氧化鋁做為介電層，不但成功的將電晶體的次臨界擺幅從11V/dec降低至0.86V/dec，並改善了元件的穩定性使得元件在暴露在大氣下七天後仍表現出良好的特性。 | zh_TW |
| dc.description.abstract | In this thesis, material analysis are first investigated to study the fundamental properties of the exfoliated black phosphorus (BP). The thickness of BP flakes can be roughly determined by optical microscopy and atomic force microscopy (AFM). The orientation of BP flakes can be recognized by Raman spectroscopy. AFM and X-ray photoelectron spectroscopy are used to observe the changing process on the BP surface when BP nanosheets are exposed in the air.
With the improvement of fabrication processes, the back-gated BP thin film transistors (TFTs) are successfully fabricated and show the good device performance. The high mobility over 400cm2/V*s and the on/off ratio up to 3 order of magnitude can be achieved by choosing the appropriate thickness of flakes and annealing conditions. However, the conventional back-gated BP TFTs with 300nm SiO2 have the higher subthreshold swing (SS) and the poor stability, which seriously limit the device applications. The top-gated structure with high-k dielectric capping not only successfully reduced the SS from 11V/dec to 0.86V/dec, but also improved the stability that the device showed the great device performance even for the 7days exposure. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-17T01:26:28Z (GMT). No. of bitstreams: 1 ntu-106-R04943104-1.pdf: 3909601 bytes, checksum: 3fb3098a8247a9eeb13db51770a3584c (MD5) Previous issue date: 2017 | en |
| dc.description.tableofcontents | 中文口試委員審定書……………………………………………………………….…i
誌謝……………………………………………………………………………………ii 摘要…………………………………………………………………………………...iii ABSTRACT………………………………………………………………………….iv CONTENTS…………………………………………………………………………..v LIST OF FIGURES………………………………………………………………...viii LIST OF TABLES……………………………………………………………….…..xi Chapter 1 Introduction……………...……………………………………………….1 1.1 Overview of Black Phosphorus…..………………………………….……...1 1.2 Advantages of BP FETs………………………………………………….….7 1.3 Motivation………………………………………………………….…..…..11 Chapter 2 Experiments……………...……………………………………………...12 2.1 Fabrication System………………………………………………...…...….12 2.1.1 Photolithography……...……...………...……...……………….12 2.1.2 E-beam lithography…………………………………....………..13 2.1.3 Evaporation systems……………………………………………15 2.1.4 Rapid thermal annealing (RTA)...................................................15 2.1.5 Reactive ion etching (RIE)……………………………………..15 2.1.6 Atomic layer deposition (ALD)………………………………...16 2.2 Measurement Techniques…………………………………………………20 2.2.1 Atomic Force Microscopy(AFM)……………………………… 20 2.2.2 Raman Spectroscopy……………………………………………20 2.2.3 X-ray Diffraction(XRD)...……………………………………...21 2.2.4 X-ray Photoelectron Spectroscopy (XPS)……...........................21 2.2.5 Ultraviolet Photoelectron Spectroscopy (UPS)...........................22 2.2.6 Current – Voltage Characteristics……………………..………...24 Chapter 3 Material Analysis for BP………………...……...………………………25 3.1 Sample Preparation………………………………………………………..25 3.1.1 Substrate Preparation…………………………………………... 25 3.1.2 Preparation of Exfoliated BP……………………………………26 3.2 Crystal Structure of BP…………………………….……………………...28 3.3 Characterization of BP Film Thickness…………………………..……….30 3.3.1 Optical Microscopy………..…………..………………………..30 3.3.2 Atomic Force Microscopy…….……………...………………...31 3.4 Orientation Recognition of BP…………………………………...………..34 3.5 Surface Analysis of BP…...…………………………...……………………39 3.5.1 Atomic Force Microscopy……………………………...………39 3.5.2 Xray Photoelectron Spectroscopy (XPS)………………………42 3.5.3 Ultraviolet Photoelectron Spectroscopy (UPS)………………...46 Chapter 4 BP Thin Film Transistors……………………………………………….50 4.1 Back-gated TFTs of black phosphorus…………...……………………….51 4.1.1 Device Process Flow……………….….……..……..…………..51 4.1.2 Annealing Effects on Device Performance…………………………….54 4.2 Thickness Dependence of Electronic Properties………….…..…..………59 4.3 Stability of BP TFTs in Air………………………...……………….……...61 4.4 BP Top-gated TFTs with High-k Gate Insulator…...…………...…...…...64 4.4.1 Capacitance of ALD Aluminum Oxide………………………....67 4.4.2 Growth of Al2O3 on BP………………………………………...68 4.4.3 Process Flow……………………………………………………70 4.4.4 Device Performance…………………………………………….72 Chapter 5 Conclusions………………………………………………………………77 References...................................................................................................................79 | |
| dc.language.iso | en | |
| dc.subject | 鈍化層 | zh_TW |
| dc.subject | 薄膜電晶體 | zh_TW |
| dc.subject | 黑磷 | zh_TW |
| dc.subject | 原子層沉積 | zh_TW |
| dc.subject | 氧化鋁 | zh_TW |
| dc.subject | 上閘極結構 | zh_TW |
| dc.subject | black phosphorus (BP) | en |
| dc.subject | atomic layer deposition (ALD) | en |
| dc.subject | aluminum oxide (Al2O3) | en |
| dc.subject | top-gated structure | en |
| dc.subject | passivation layer | en |
| dc.subject | thin film transistor (TFT) | en |
| dc.title | 高介電係數介電層應用於上閘極結構黑磷薄膜電晶體 | zh_TW |
| dc.title | Top-gated Black Phosphorus Thin Film Transistor with High-K Dielectric Layer | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 105-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 劉致為,陳敏璋,林浩雄 | |
| dc.subject.keyword | 黑磷,薄膜電晶體,鈍化層,上閘極結構,氧化鋁,原子層沉積, | zh_TW |
| dc.subject.keyword | black phosphorus (BP),thin film transistor (TFT),passivation layer,top-gated structure,aluminum oxide (Al2O3),atomic layer deposition (ALD), | en |
| dc.relation.page | 91 | |
| dc.identifier.doi | 10.6342/NTU201702697 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2017-08-08 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
| 顯示於系所單位： | 電子工程學研究所 | |
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