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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 林浩雄 | |
dc.contributor.author | Yan-Ting Lin | en |
dc.contributor.author | 林衍廷 | zh_TW |
dc.date.accessioned | 2021-06-17T00:51:38Z | - |
dc.date.available | 2012-01-17 | |
dc.date.copyright | 2012-01-17 | |
dc.date.issued | 2011 | |
dc.date.submitted | 2011-11-11 | |
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Zhang, 'Study of interdiffusion in GaAsSbNGaAs quantum well structure by ten-band kp method,' J. Appl. Phys. 98, 026102 (2005). S. Tiwari and D. J. Frank, 'Empirical fit to band discontinuities and barrier heights in III-V alloy systems,' Appl. Phys. Lett. 60, pp. 630 (1992). G. Liu, S. L. Chuang, and S. H. Park, 'Optical gain of strained GaAsSb/GaAs quantum- well lasers: A self-consistent approach,'J. Appl. Phys. 88, pp. 5554 (2000). J. B. Wang, S. R. Johnson, S. A. Chaparro, D. Ding, Y. Cao, Yu. G. Sadofyev, Y. H. Zhang, J. A. Gupta and C. Z. Guo, 'Band edge alignment of pseudomorphic GaAs1−ySby on GaAs,' Phys. Rev. B, 70, pp. 195339 (2004). E. H. Reihlen, M. J. Jou, Z. M. Fang, and G. B. Stringfellow, 'Optical absorption and emission of InP1-xSbx alloys,' J. Appl. Phys. 68, pp. 4604 (1990). L. Bellaiche, A. Zunger, 'Effects of atomic short-range order on the electronic and optical properties of GaAsN, GaInN, and GaInAs alloys,' Phys. Rev. B 57, 4425 (1998). M. 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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/66692 | - |
dc.description.abstract | 本論文我們研究利用氣態源分子束磊晶成長的氮銻砷化鎵樣品在熱退火前後的能隙和原子結構的改變。經由光激發螢光和光學吸收譜的量測,此材料的能隙在經過750C熱退火之後有著明顯的能隙藍移現象。這些氮銻砷化鎵樣品在經過熱退火後的能隙值與文獻利用能帶彎曲模型所計算的能隙很接近。此外,氮和銻可以獨立控制縮減此材料的能隙。在這樣的基礎下,我們提出雙能帶彎曲模型並用來說明氮和銻的加入可分別獨立控制砷化鎵的導電帶和價電帶能量。我們也研究了氮銻砷化鎵在經過熱退火後能隙藍移的原因。我們相信“氮原子對”存在於熱退火前的氮銻砷化鎵樣品,其能隙比雙能帶彎曲模型理論計算值還低。在經過熱退火處理之後,“氮原子對”逐漸分離成“獨立氮”的形式並導致能隙藍移。將調置光譜量測的訊號經由Karmers-Kronig 模組轉換後的分析,我們可以解析出各種“氮原子對”和“獨立氮”所造成訊號。當熱退火溫度上升時,這些訊號逐漸混合到“獨立氮”的訊號。為了更進一步找尋可以支持“氮原子對”分離理論的證據,我們利用國家同步輻射中心20A光束線量測了氮的K-edge X 光吸收近邊緣頻譜並研究氮銻砷化鎵短範圍結構的變化。我們使用價力場模型建立多個216原子的超晶格,分別包含了許多不同的結構,包括“獨立氮”、“氮原子對”、氮氫複合物等等。我們以氮為中心,建構一個381原子的球型原子堆並利用模擬軟體FEFF9來模擬氮的光吸收近邊緣頻譜。藉由比較實驗值和模擬值,我們認為“氮原子對”存在於熱退火前的氮銻砷化鎵樣品。當熱退火850C、5分鐘後“氮原子對”轉換成獨立氮氫複合物。 | zh_TW |
dc.description.abstract | In this dissertation, the effects of thermal annealing on the energy gap and atomic structure of GaAsSbN, grown by gas source molecular beam epitaxy, have been investigated. From the measurement of photoluminescence and optical absorption, significant blue-shifts in energy gap, resulting from annealing with a temperature higher than 750C, were observed. The energy gap of the annealed GaAsSbN follows the band anticrossing model (BAC) reported in literature. Furthermore, the energy gap reduction can be independently controlled by Sb and N compositions. On the ground of this finding, we proposed a double BAC model, in which we suggest that N and Sb compositions control the energy of conduction and valence band respectively. Besides, the origin of the blue shift induced by thermal annealing is investigated. We believe N pairs NN1 responsible for the low energy gap of the as-grown GaAsSbN. Thermal annealing dissociates the pair into isolated N atoms, resulting in the blue-shift in energy gap. From the Kramers-Kronig modulus of photoreflectance measurement, we resolve multi-peaks relevant to different N pairs and isolated N. When the annealing temperature increases, the peaks gradually merge to that of isolated N. To further support the proposed N pairs dissociation theory, we performed N K-edge X-ray absorption near-edge spectroscopy (XANES) using the beam line 20A of National Synchrotron Radiation Research Center to study the short range structure of GaAsSbN. We use valence force field model to generate supercells with 216 atoms containing different atomic structures, including isolated N, NN1 pair, N-HBC complex, and so on. FEFF9 code, purchased from University of Washington, was then used to simulate the XANES spectra of N-centered cluster of 381 atoms, developed from supercells with different atomic structures. By comparing the experimental results with the simulated XANES, we conclude that NN1 pair existed in the as grown GaAsSbN sample. After thermal annealing at 850 C for 5 min, NN pairs transform into isolated N-HBC complex. | en |
dc.description.provenance | Made available in DSpace on 2021-06-17T00:51:38Z (GMT). No. of bitstreams: 1 ntu-100-D96943023-1.pdf: 2204780 bytes, checksum: 255d550e6d63d247d835f187df9f3782 (MD5) Previous issue date: 2011 | en |
dc.description.tableofcontents | 中文摘要 I
Abstract II Index IV Figure index VI Table Index IX Chapter 1 Introduction 1 1.1 Motivation and application of dilute nitride GaAsSbN 1 1.2 Double band anticrossing model of GaAsSbN 1 1.3 Nitrogen rearrangement in GaAsSbN during annealing 3 1.4 XAFS of GaAsSbN 4 1.5 Thesis framework 5 Chapter 2 Experimental Procedures 7 2.1 Molecular beam epitaxy 7 2.2 Sample processes: 8 (a) Sample polish 9 (b) Sample cleaning 9 (c) Rapid thermal annealing 10 2.3 Absorption spectroscopy 10 2.4 Photoluminescence spectroscopy (PL) 12 2.5 Fourier transform infrared spectroscopy (FTIR) 12 2.6 X-Ray diffraction (XRD) 13 2.7 Electron probe X-Ray microanalyzer (EPMA) 13 2.8 Photo-reflectance (PR) measurement 14 2.9 X-Ray absorption near edge spectroscopy (XANES) measurement 14 Chapter 3 Band anticrossing model and electronic structure of GaAsSbN 19 3.1 Double band anticrossing model 20 3.2 Experiments result of GaAsSbN 23 Chapter 4 Origin of annealing-induced blue shift in the energy gap of GaAsSbN 31 4.1 Blue shift in energy gap of GaAsSbN after annealing 31 4.2 Optical and electronic properties of GaAsSbN during thermal annealing 36 Chapter 5 Short range structure of GaAsSbN 44 5.1 Simulation: Valence force field (VFF) model and FEFF9 code 45 5.2 Simulated Nitrogen K-edge XANES spectra by FEFF9 48 5.3 N K-edge XANES and PR of GaAsSbN with different short range N structure: NN1 pairs, isolated N, and N-HBC complex 50 Chapter 6 Conclusion 65 Reference 67 Figure index Figure 2.1 The sketch diagram of annealing temperature V.S. annealing time. Slope of temperature raising is 250 oC/min. 16 Figure 2.2 The diagram shows the internal sample holder of MILA 3000 rapid thermal annealer. Al/Si is used for temperature calibration. 16 Figure 2.3 Illustration of transmission system 17 Figure 2.4 The solid line is a measured spectrum of GaAsSbN sample. The dash line at 0.8 eV is the simulated absorption coefficient. The dash line at high energy is the simulation spectrum of spin orbital energy. 17 Figure 2.5 Components of a photo-luminescence system 18 Figure 3.1 Band structure of GaAsSbN, the upper band is a BAC model of GaAsN, the lower band is a BAC model of GaAsSb. The band gap of GaAsSbN is from the valence band maximum to the conduction maximum of the solid line. 27 Figure 3.2 The band gaps and spin orbital energys of GaAsSb, GaAsSbN with different Sb and N compositions. 28 Figure 3.3 The experimental and fitting absorption curves of GaAsSbN. The dash line is divide into two sections. The energy gap and spin orbital energy gap can be derived in these fitting curves. 28 Figure 3.4 The dots are the band gap of GaAsSbN with different N and Sb compositions. The solid lines are the simulated energy gaps by double band anticorssing model. 29 Figure 3.5 Ga-N local vibration mode of GaAsSbN after different annealing temperature. The peaks are at 469 cm-1 and The intensities are increasing after thermal annealing. 30 Figure 3.6 Spots are the spin orbital splitting energys of GaAsSbN with different Sb and N compositions. The solid line is the calculated spin orbital splitting energy by DBAC model with Sb composition. 30 Figure 4.1 The energy gaps and PL emission peaks of GaAsSbN with different Sb and N compositions during thermal annealing. The blue shift of energy gaps are 40~60 meV with N 2%~3%. 39 Figure 4.2 RT absorption and PL spectra of GaAsSbN samples with different annealing treatments. Fitting curves for direct energy gap absorption and band-to-band PL are also depicted in the figure. 40 Figure 4.3 (a) Room temperature (RT) Ga-N local vibration mode (LVM) absorbance spectra of GaAsSbN samples with different annealing treatments. (b) RT absorption band gap and the NAs LVM absorbance of GaAsSbN as functions of the annealing temperature. 40 Figure 4.4 (a) Photo-reflectance (PR) spectra of three GaAsSbN samples, as-grown, after 800 ºC annealing, and 850 ºC annealing. (b) Kramers-Kronig modulus of the PR signals shown in (a). Different nitrogen neighbor structures are assigned in the figure. 41 Fig. 4.5 Room temperature absorption band gap of GaAsN0.017, GaAs0.916Sb0.084, GaAs0.906Sb0.075N0.019 as functions of the annealing temperature. The PL peak energy of the GaAsN and GaAsSbN sample is also depicted. Solid dots are absorption band gap and the hollow dots are PL peak energy. 42 Fig. 4.6 Temperature-dependent photoluminescence spectra of GaAs0983N0.017, GaAs0.916Sb0.084 and GaAs0.906Sb0.075N0.019 samples which are annealed at 800 oC. Solid lines are the Varshni fitting of the annealed samples. 42 Fig. 4.7 Carrier concentration and carrier types of the GaAs, GaAsN, GaAsSb and GaAsSbN samples which annealed at different temperatures. 43 Figure 5.1 The N K-edge XANES spectrum of GaAsN with different values of FMS. The spectrum changes until FMS = 13 A. 55 Figure 5.2(a) 5.1 The N K-edge XANES spectrum of GaAsN and (b) the peak energies of white line with different bond lengths of Ga-N at the first shell of N. The lattice constant is calculated by Vegard’s law. The slope is -4.6e V/A. 56 Figure 5.3(a) The N K-edge XANES spectrum and (b) the peak energies of white line of GaAsN with different distances of As-N at the second shell of N. The lattice constant is calculated by Vegard’s law. The slop is 1.67 V/A . 57 Figure 5.4 The N XANES spectrum of GaAs0.98N0.02, random Sb and cluster Sb GaAs0.91Sb0.07N0.02. N atoms are random distribute in GaAsSbN. 58 Figure 5.5 (a) PR spectrum of as grown, RTA650 oC, RTA800 oC, RTA850 oC GaAs0.946Sb0.032N0.022. (b) Kramers- Kronig modulus of the PR signals shown in (a). Different nitrogen neighbor structures are assigned in the figure. 59 Figure 5.6 The N XANES spectrum of isolated and NN1 pair GaAs0.95Sb0.03N0.02. Sb atoms are random distribute in GaAsSbN. 60 Figure 5.7 The atomic structures and the bond length of GaAs0.95Sb0.03N0.02 (a) isolated N before the calculation of VFF model (b) isolated N after the calculation VFF model (c) NN1 pair after the calculation of VFF model. 61 Figure 5.8 The experimental and simulated N XANES spectrum. NN1 pair of GaAs0.95Sb0.03N0.02 is well fitting to the as grown GaAs0.946Sb0.032N0.022. Sb atoms are random distribute in GaAsSbN for the simulated spectrum. 62 Figure 5.9 The experimental and simulated N XANES spectrum. Red and blue lines are the simulated spectra of NN1 pair and isolated N of GaAs0.95Sb0.03N0.02 . Sb atoms are random distribute in GaAsSbN for the simulated spectrum. The black line is the 850 oC annealed GaAs0.946Sb0.032N0.022 spectrum. 62 Figure 5.10 The experimental of 850 oC annealed GaAs0.946Sb0.032N0.022 and simulated GaAs0.98N0.02 isolated N-HBC XANES. 63 Figure 5.11 Atomic structures of (a) Isolated N and (b) N-HBC complex of GaAs0.98N0.02. 63 Table Index Table.1 Lattice constants a, average Ga-N bond lengths bGa-N, average distance of As-N dAs-N, and nearest nitrogen distance dN-N by the calculation of Vegard’s law and VFF model. 64 Table.2 Lattice constants a, Ga-N bond lengths bGa-N, Ga-H bond length bGa-H, N-HBC bond length bN-H, average distance of As-N dAs-N, and nearest nitrogen distance dN-N by the calculation of VFF model. 64 | |
dc.language.iso | zh-TW | |
dc.title | 熱退火對氮銻砷化鎵能隙及原子結構的影響 | zh_TW |
dc.title | Effects of thermal annealing on the energy gap and atomic structure of GaAsSbN | en |
dc.type | Thesis | |
dc.date.schoolyear | 100-1 | |
dc.description.degree | 博士 | |
dc.contributor.oralexamcommittee | 柯誌欣,黃鶯聲,辛華煜,毛明華,鄭舜仁 | |
dc.subject.keyword | 氮砷銻化鎵,熱退火,能隙藍移,分子束磊晶,氮原子對,能帶彎曲模型,同步輻射,氮氫複合物, | zh_TW |
dc.subject.keyword | GaAsSbN,annealing,blue shift,MBE,nitrogen pair,band anticrossing,synchrotron radiation,N-HBC complex, | en |
dc.relation.page | 70 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2011-11-11 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
顯示於系所單位: | 電子工程學研究所 |
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