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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 蔡豐羽(Feng-Yu Tsai) | |
| dc.contributor.author | Yi-Neng Chang | en |
| dc.contributor.author | 張貽能 | zh_TW |
| dc.date.accessioned | 2021-06-17T00:45:21Z | - |
| dc.date.available | 2013-02-08 | |
| dc.date.copyright | 2012-02-08 | |
| dc.date.issued | 2011 | |
| dc.date.submitted | 2012-01-06 | |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/66596 | - |
| dc.description.abstract | This study addresses in stability issue of flexible polymer light-emitting diode (PLED) devices with a two-pronged approach based on atomic layer deposition (ALD): developing an inverted PLED device structure—which offers far superior inherent stability to that of the conventional structure—with a dual-functioning electron-injection layer/gas barrier by ALD at plastic-substrate-compatible temperatures, and developing a thin-film encapsulation technique by ALD that is compatible with the inverted PLED device. ALD ZnO was used as the electron-injection layer (EIL)/gas barrier, and a range of plastic-compatible deposition temperatures (70-90℃) were examined. Lower deposition temperatures were found to yield superior device performance, because they yielded lower carrier concentrations which allowed more effective hole-blocking at the cathode of the PLED devices, and they provided better gas-barrier function as a result of their low crystallinity. When applying an ALD HfO2/Al2O3 nanolaminated film to the PLED devices as an encapsulation layer, we observed severe encapsulation-induced degradation due to aggregation of our MoO3 hole-injection layer at the ALD temperature of 90ºC. We eliminated this degradation by developing a low-temperature (70 ºC) ALD process of Al2O3/ZnO nanolaminates, which combined with the ZnO EIL/gas barrier enabled plastic-based PLED devices to retain ~90% of their initial luminance upon storing in air for 1610 hours. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-17T00:45:21Z (GMT). No. of bitstreams: 1 ntu-100-R98527014-1.pdf: 5705668 bytes, checksum: 06535ec0a9cd32a3d08cc7e108c8c456 (MD5) Previous issue date: 2011 | en |
| dc.description.tableofcontents | Acknowledgement i
Abstract (Chinese) ii Abstract (English) iii Contents iv List of Figures vi List of Tables viii Chapter 1 Introduction 1 1.1 Introduction to OLEDs 1 1.2 Working Principle of OLED Device 3 1.3 Development of OLED 6 1.3.1 Conventional Structure 6 1.3.2 Inverted Structure 7 1.3.3 Hybrid Organic-Inorganic Light-Emitting Diode (HyLED) 8 1.4 Literature Reviews of Hybrid Organic-Inorganic LEDs 9 1.4.1 Metal Oxide as Electron-Injection Layer (EIL) 9 1.4.2 Modification on Metal Oxide EIL 11 1.5 Review of Encapsulation Methods 14 1.5.1 Glass or Metal Lid Encapsulation 15 1.5.2 The Difficulty of Encapsulation for Flexible Electronic Devices 16 1.5.3 Thin-Film Encapsulation 18 1.6 Introduction to Atomic Layer Deposition (ALD) 19 1.7 Objective Statement 22 Chapter 2 Experimental details 23 2.1 Materials 23 2.2 Atomic Layer Deposition (ALD) Process 24 2.3 Fabrication of PLED Device 27 2.4 Characterization 29 2.4.1 Devices Performance 29 2.4.2 Electrical Properties of Thin Films 29 2.4.3 Luminescence Spectrum 29 2.4.4 Element Quantitative Analysis 30 2.4.5 Film Morphology 30 2.4.6 Gas Permeation Property 30 Chapter 3 Results and Discussion 32 3.1 ZnO electron-injection layer and gas permeation property 32 3.1.1 Characteristics of Low-Temperature ZnO films 32 3.1.2 IVL performance of the devices 35 3.1.3 ZnO Gas Permeation Property 40 3.2 Encapsulation methods for PLED Devices 42 3.2.1 Glass Lid/UV-cured Epoxy Encapsulation 42 3.2.2 ALD gas barrier thin-film encapsulation 44 3.2.3 Storage Lifetime of ALD Encapsulated PLED Devices 56 Chapter 4 Conclusions and Future works 58 4.1 Conclusions 58 4.2 Future Works 59 Reference 60 | |
| dc.language.iso | en | |
| dc.subject | 高分子發光二極體 | zh_TW |
| dc.subject | 原子層沉積技術 | zh_TW |
| dc.subject | 氧化鋅 | zh_TW |
| dc.subject | 阻氣膜 | zh_TW |
| dc.subject | 封裝 | zh_TW |
| dc.subject | zinc oxide | en |
| dc.subject | atomic layer deposition | en |
| dc.subject | polymer light-emitting diode | en |
| dc.subject | encapsulation | en |
| dc.subject | gas barrier | en |
| dc.title | 利用原子層沉積技術製備高分子發光二極體之電子注入及阻氣層 | zh_TW |
| dc.title | Electron Injection and Gas Barrier Layers by Atomic Layer Deposition for Polymer LED | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 100-1 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 廖文彬(Wen-Bin Liau),林唯芳(Wei-Fang Su) | |
| dc.subject.keyword | 高分子發光二極體,原子層沉積技術,氧化鋅,阻氣膜,封裝, | zh_TW |
| dc.subject.keyword | polymer light-emitting diode,atomic layer deposition,zinc oxide,gas barrier,encapsulation, | en |
| dc.relation.page | 67 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2012-01-06 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
| 顯示於系所單位： | 材料科學與工程學系 | |
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| ntu-100-1.pdf 未授權公開取用 | 5.57 MB | Adobe PDF |
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