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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 顏家鈺(Jia-Yush Yen) | |
dc.contributor.author | Yi-Hung Kuo | en |
dc.contributor.author | 郭逸宏 | zh_TW |
dc.date.accessioned | 2021-06-17T00:26:59Z | - |
dc.date.available | 2015-01-01 | |
dc.date.copyright | 2012-04-24 | |
dc.date.issued | 2012 | |
dc.date.submitted | 2012-02-15 | |
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/66243 | - |
dc.description.abstract | 目前最有機會的兩個次世代微影技術為極紫外光微影與無光罩多電子束微影,對於後者而言,電子束漂移感測是首要發展的技術。本文以電子顯微鏡作為研究平台,以矽光電二極體作為電子束位置與漂移感測器,利用收集電子束打擊試片所反彈的背向散射電子來量測電子束位置;以及利用影像分析電子束漂移現象,並與電子顯微鏡內建的二次電子感測器做比較。
感測區分為四象限,可用於分析電子束所產生之背向散射電子分布,以及長時間操作下電子束光學系統所產生的電子束漂移現象。此外,配合電子束掃描線圈以及矽光電二極體電子感測器可產出背向散射電子影像。在未來可使發展中之大規模平行寫入多電子束直寫系統(MPML2)具有成像能力。 初步顯示在5 kV使用以及3 mm工作距離下有足夠的電流增益。因此陣列型式的感測器將提供了有效的方案可用於MPML2。 | zh_TW |
dc.description.abstract | Two potential opportunities for the next generation of the lithography are the extreme ultraviolet lithography (EUV), and the mask-less multi-electron-beam lithography. In the latter, the beam drift detection is the demanding technique. In this dissertation, we used scanning electron microscopy as a research platform to set up the silicon photodiode as the electron beam position and drift detectors. By collection of the back-scattered electrons from the specimen, the electron beam position could be computed. And the beam drift could be derived from electronic image analysis, and the results showed good consistence with those derived from the secondary electron image captured by the SEM built-in electron sensor.
In the silicon photodiode, the sensing areas are divided into four quadrants, which can be used to analyze the backscattered electron distribution generated by the primary electron beam, and the beam drift phenomenon accompanies long runtime operation in electron beam system. In addition, with the electron beam scanning coils and the silicon photodiode, the backscattered electron images could be produced. The under-development large-scale parallel multi-electron-beam direct writing system (MPML2) could be capable with imaging capabilities by using silicon photodiodes in the future. The preliminary results showed that there is sufficient current gain in the conditions of 5kV acceleration voltage and 3mm working distance. It seems that the array type of detectors will be good choice in MPML2. | en |
dc.description.provenance | Made available in DSpace on 2021-06-17T00:26:59Z (GMT). No. of bitstreams: 1 ntu-101-D93522016-1.pdf: 3907055 bytes, checksum: 5cad35f2f3e10b5187bf05b301495229 (MD5) Previous issue date: 2012 | en |
dc.description.tableofcontents | 目錄
誌謝 i 中文摘要 iv ABSTRACT v 研究貢獻 vi 目錄 vii 圖目錄 x 表目錄 xv 第1章 緒論 1 1.1 研究動機 1 1.2 研究目的 2 1.3 各章摘要 3 第2章 微影系統簡介 5 2.1 單一電子束微影系統 7 2.2 多電子束微影系統 7 2.3 電子束漂移特性 10 第3章 矽光電二極體感測器簡介 15 3.1 電子相互作用基本原理 15 3.2 電子感測器的選擇 18 3.3 矽光電二極體的工作原理 19 3.4 矽光電二極體的特性 20 3.4.1 線性性質 21 3.4.2 量子效率 22 3.4.3 響應性 23 第4章 系統架構 25 4.1 JEOL 7000F電子顯微鏡簡介 25 4.2 電子束直寫系統 27 4.3 矽光電二極體感測系統介紹 28 4.3.1 矽光電二極體 29 4.3.2 線性傳輸棒 32 4.3.3 微電流計 35 4.3.4 接線端子台 36 4.3.5 訊號擷取卡 36 4.3.6 棋盤狀標準試片 37 4.3.7 針尖試片 38 4.4 軟體介紹 39 4.4.1 電子顯微鏡控制軟體 39 4.4.2 電子束直寫軟體 41 4.5 電子束位置漂移感測實驗規畫 44 4.5.1 電子束位置 44 4.5.2 電子影像 44 4.5.3 演算法簡介 48 4.5.4 電子束漂移 49 第5章 實驗結果 51 5.1 矽光電二極體性能表現 51 5.1.1 總電流 v.s. 加速電壓 51 5.1.2 總電流 v.s. 遮蔽器試片電流 55 5.1.3 總電流 v.s. 工作距離 57 5.2 電子束位置與漂移實驗 59 5.2.1 電子束位置實驗 59 5.2.2 電子束漂移實驗 63 5.3 背向散射電子影像 77 第6章 結論與未來展望 79 6.1 結論 79 6.2 未來展望 81 6.3 成果發表情況 83 參考文獻 85 附錄 89 | |
dc.language.iso | zh-TW | |
dc.title | 利用矽光電二極體感測電子束微影系統電子束位置及漂移現象 | zh_TW |
dc.title | Electron Beam Position and Drift Detection through Silicon Photodiodes in Electron Beam Lithography System | en |
dc.type | Thesis | |
dc.date.schoolyear | 100-1 | |
dc.description.degree | 博士 | |
dc.contributor.coadvisor | 陳永耀(Yung-Yaw Chen) | |
dc.contributor.oralexamcommittee | 陳政宏,蔡坤諭(Kuen-Yu Tsai),李佳翰(Jia-Han Li) | |
dc.subject.keyword | 矽光電二極體,背向散射電子, | zh_TW |
dc.subject.keyword | Silicon photodiode,backscattered electron, | en |
dc.relation.page | 90 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2012-02-15 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 機械工程學研究所 | zh_TW |
顯示於系所單位: | 機械工程學系 |
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