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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 張顏暉(Yuan-Huei Chang) | |
dc.contributor.author | Chan-Cheng Chen | en |
dc.contributor.author | 陳展承 | zh_TW |
dc.date.accessioned | 2021-06-17T00:18:21Z | - |
dc.date.available | 2012-06-29 | |
dc.date.copyright | 2012-06-29 | |
dc.date.issued | 2012 | |
dc.date.submitted | 2012-06-28 | |
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/65997 | - |
dc.description.abstract | 本論文,我們利用熱蒸鍍法在P-type 矽基板上,度上一層鎳薄膜。將其放入高溫爐氧化,形成氧化鎳薄膜,並利用鋁,做為此結構的上電極,使用AFM以及XRD分析其表面結構以及晶格結構。
本研究分別針對,氧化溫度與氧氣流量此兩種變因,對此結構的雙極電阻式記憶體性質做分析討論。 實驗結果顯示,在提高氧化溫度下,高阻態與低組態的電阻值會隨者溫度上升而上升;在提高流量之下,高阻態與低組態的電阻值會隨者流量上升而下降。而另外粗糙度的提升,會使元件的電阻轉換性質變得更穩定。 電阻式記憶體是目前尚在發展中的一種新的固態電子元件。其主要的目的在於取代 DRAM與FLASH此兩種記憶體,而目前研究上的挑戰是在於穩定性與持久性這兩個問題上。 | zh_TW |
dc.description.abstract | In this thesis, a resistive random-access memory was fabricated by using the nickel oxide, grown by thermal evaporation followed by an annealing process at different temperatures, as the dielectric layer sandwiched between the p-type silicon substrate and the aluminum contact. Atomic force microscopy and X-ray diffraction analysis were carried out for the investigation on the surface morphology and the crystalline structure of the grown nickel oxide, respectively.
It was revealed that the annealing temperature and the oxygen flow were crucial to the electrical property of the nickel oxide layer. From the experimental results, it was found that the values of high-resistive and low-resistive states will increase with the incremental annealing temperature but decrease with the increasing oxygen flow rate at the optimized annealing temperature. It was also observed that the surface morphology is the key factor for stabilizing the operation of the resistive random-access memory. The results indicated that a nickel oxide film with a rougher surface morphology will greatly improve the lifetime and the reliability of the device. Resistive random-access memory is presently a developing subject for solid state devices and aimed to replace dynamic random-access memory and flash memory. The results in this thesis indicate that the stability and persistence of the resistive random-access memory devices will be the fundamental challenges for its future development. | en |
dc.description.provenance | Made available in DSpace on 2021-06-17T00:18:21Z (GMT). No. of bitstreams: 1 ntu-101-R99222044-1.pdf: 3312954 bytes, checksum: 78d3e268340363b67485074f5bae8767 (MD5) Previous issue date: 2012 | en |
dc.description.tableofcontents | 口試委員審定書 Ⅰ
致謝 Ⅱ 英文摘要 Ⅲ 中文摘要 Ⅳ 目錄 V 圖目錄 VI 表目錄 VII 第一章 緒論 1.1 研究目的與動機---------------------------------------------------1 第二章 理論基礎 2.1 氧化鎳基本特性--------------------------------------------------2 2.2.1 氧化鎳基本特性---------------------------------------------2 2.2 記憶體原理------------------------------------------------------5 2.2.1 記憶體簡介-------------------------------------------------5 2.2.2 FeRAM------------------------------------------------------7 2.2.3 PCRAM------------------------------------------------------8 2.2.4 MRAM------------------------------------------------------10 2.2.5 RRAM------------------------------------------------------11 2.2.6 DRAM------------------------------------------------------13 2.2.7 FLASH-----------------------------------------------------15 2.2.8 各種記憶體之比較------------------------------------------17 2.3 電阻式記憶體原理-----------------------------------------------18 2.3.1 電阻轉換行為分類------------------------------------------18 2.3.2 單極原理--------------------------------------------------20 2.3.3 雙極原理--------------------------------------------------23 2.3.3.1 氧離子遷移------------------------------------------23 2.3.3.2 金屬離子遷移----------------------------------------25 2.3.3.3 electrin trap and detrap model----------------------27 2.3.3.4 氧化鎳雙極電阻式記憶體原理--------------------------28 第三章 實驗流程----------------------------------------------------30 3.1 實驗流程-------------------------------------------------------30 3.1.1 實驗流程圖------------------------------------------------30 3.2 實驗步驟詳細說明-----------------------------------------------31 3.2.1 基板準備--------------------------------------------------31 3.2.2 Al/NiO/p+-silicon元件製作---------------------------------31 3.2.3 高溫爐氧化熱退火處理--------------------------------------32 3.2.4 薄膜結晶結構分析------------------------------------------32 3.2.5 薄膜表面結構分析------------------------------------------32 3.2.6 電性分析--------------------------------------------------33 第四章 結果與討論--------------------------------------------------34 4.1 氧化鎳薄膜材料分析---------------------------------------------34 4.1.1 氧化鎳薄膜膜厚分析----------------------------------------34 4.1.2 氧化鎳薄膜晶格結構分析------------------------------------36 4.1.3 氧化鎳薄膜表面結構分析------------------------------------37 4.2 Al/NiO/P+-Silicon雙極電阻轉換性質分析--------------------------45 4.2.1 元件I-V圖------------------------------------------------45 4.2.2 不同氧化溫度雙極電阻轉換性質分析--------------------------52 4.2.3 不同氧氣流量雙極電阻轉換性質分析--------------------------54 4.2.4 穩定性分析------------------------------------------------55 4.2.4.1 HRS/LRS --------------------------------------------57 4.2.4.2 持久性分析------------------------------------------59 4.2.4.3 Vset/Vreset---------------------------------------------61 第五章 結論--------------------------------------------------------64 參考文獻-----------------------------------------------------------65 | |
dc.language.iso | zh-TW | |
dc.title | 氧化鎳雙極性電阻式記憶體之電性分析 | zh_TW |
dc.title | Electrical properties of NiO bipolar Resistive Random Access Memory (RRAM) | en |
dc.type | Thesis | |
dc.date.schoolyear | 100-2 | |
dc.description.degree | 碩士 | |
dc.contributor.coadvisor | 梁啟德(Chi-Te Liang) | |
dc.contributor.oralexamcommittee | 陳永芳(Yang-Fang Chen),石明豐(Ming-Feng Shih) | |
dc.subject.keyword | 電阻式記憶體,氧化鎳, | zh_TW |
dc.subject.keyword | RRAM,NiO, | en |
dc.relation.page | 67 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2012-06-28 | |
dc.contributor.author-college | 理學院 | zh_TW |
dc.contributor.author-dept | 物理研究所 | zh_TW |
顯示於系所單位: | 物理學系 |
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