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標題: | 堆疊高介電常數材料在金氧半元件之應用技術 Application Technique of Stacking High-k Dielectric Materials on MOS Device |
作者: | Che-Yu Yang 楊哲育 |
指導教授: | 胡振國 |
關鍵字: | 深空乏,強化型邊緣電場效應, deep depletion,enhanced fringing field effect, |
出版年 : | 2012 |
學位: | 博士 |
摘要: | 本論文之研究成果主要分為兩部分,包含第一部分利用陽極氧化、交直流補償技術及堆疊結構來改善矽基板上高介電常數以及第二部分探討氧化鉿/二氧化矽所造成的電容-電壓的深空乏現象及元件應用。在第一部分我們提出一方法,首先在室溫下以陽極氧化技術在P型的半導體基板上成長超薄二氧化矽,再以熱蒸鍍的方式將金屬鋁鍍於二氧化矽上,接著在硝酸溶液下使得薄膜鋁氧化成為高介電係數的金屬氧化鋁,並採用交直流的方式補償技術,使改善其二氧化矽及其氧化鋁的介面特性及補償缺陷,有效降低漏電流特性,並提出其前後串聯堆疊(tandem)結構,目的是使其金屬鋁氧化更完全並使介面特性得以改善更完善,最後進一步進行電特性分析,並以穿透式電子顯微鏡 (TEM)及能量散佈分析儀 (EDX)作元素分析,來取得實際物理厚度及分析材料相關特性。在第二部分,
討論氧化鉿/二氧化矽金氧半結構之電容-電壓的深空乏現象,發現在此較深的空乏區,有更大機率且更大量的穿隧電流會通過此區域。並觀察到其邊緣電場效應下,電荷收集特性會提升,特別是照光下,光激發的載子在邊緣的深空乏區會被重點吸收。此外,我們亦評估光電應用重要指標之響應率R 和光敏性Ps。發現光電流與照光強度的作圖曲線斜率可達到1.59,這使該元件應用於感測器可能是行的。這些實驗結果歸因於強化的邊緣深空乏區所造成之有效光的吸收。本文進一步分析光電特性,並提出能帶圖來解釋物理機制。 The result of this dissertation was divided into two parts. In the first part, it includes anodic oxidation (anodization) process,alternating-current anodization compensation technique and tandem structure to improve high-k dielectrics materials on Si substrate. In the second part, the capacitance- voltage deep depletion phenomenon of HfO2/SiO2 stacks was studied. Firstly, we propose a method that ultra-thin SiO2 was grown on p-type Si substrate by anodization in ambient temperature, then thin Al was deposited on top of SiO2 by thermal evaporation. Thin Al was oxidized to Al2O3 as high-k dielectrics by HNO3 oxidation. In addition, anodization compensation technique was adopted to improve the interface property between Al2O3 and SiO2 and also to compensate the trap. On the other hand, we propose a tandem structure in order to make Al oxidize completely and improve interfacial property thoroughly. Finally, the characteristics of dielectric were analyzed further by using transmission electron microscope (TEM) and energy dispersive X-ray (EDX) spectrometer to know the composition of material. It also provides the information of the physical thickness and related properties of material. Secondly, we study the capacitance-voltage deep-depletion phenomenon of MOS structure with HfO2/SiO2. It was found that much possibility and larger amount of tunneling current would pass through the deep depletion region. Besides, we observed that the characteristics of charge collection were enhanced under the edge fringing field effect. Carriers of the photoluminescence were largely absorbed at the edge of device especially under illumination. In addition, responsivity R and photosensitivity Ps which were evaluative figure for photo-electrical applications were examined and discussed. The slope κ of photocurrent versus irradiance curves reaches to 1.59 which is feasible for image sensor. These results are attributed to the enhanced edge deep depletion absorption of light due to edge fringing field effect. Further analysis of photoelectrical characteristics was carried out and the energy band diagrams were also given to explain the mechanism of device physics. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/65800 |
全文授權: | 有償授權 |
顯示於系所單位: | 電子工程學研究所 |
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