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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 連雙喜(Shuang-Shii Lian) | |
dc.contributor.author | Hsin-Jung Lin | en |
dc.contributor.author | 林欣蓉 | zh_TW |
dc.date.accessioned | 2021-06-16T23:45:08Z | - |
dc.date.available | 2015-07-27 | |
dc.date.copyright | 2012-07-27 | |
dc.date.issued | 2012 | |
dc.date.submitted | 2012-07-24 | |
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Dupret, Time-dependent simulation of the growth of large silicon crystals by the Czochralski technique using a turbulent model for melt convection. Journal of Crystal Growth, 1997. 180(3-4): p. 450-460. 10. A. ller, , Silicon for photovoltaic applications. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 2006. 134(2): p. 257-262. 11. Li, Z.M., Thermal transportation simulation of a susceptor structure with ring groove for the vertical MOCVD reactor. Journal of Crystal Growth, 2009. 311(23): p. 4679-4684. 12. J. Wei, H.Z., L. Zheng, C. Wang. B. Zhao, Modeling and improvement of silicon ingot directional solodification for industrial production systems. systems, Solar Energy Materials and Solar Cells 93 (2009) 1531-1539.13. 13. Y. Teng, The carbon distribution in multicrystalline silicon ingots grown using the directional solidification process. Journal of Crystal Growth, 2010. 312(8): p. 1282-1290. 14. D. 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ED-27, NO. 4, APRIL 1980. 677. 21. H. Matsuo, , Analysis of oxygen incorporation in unidirectionally solidified multicrystalline silicon for solar cells. Journal of Crystal Growth, 2008. 310(7): p. 2204-2208. 22. Smirnov and V. Kalaev, Development of oxygen transport model in Czochralski growth of silicon crystals. Journal of Crystal Growth, 2008. 310(12): p. 2970-2976. 23. K. Hoshikawa, , Oxygen transportation during Czochralski silicon crystal growth. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 2000. 72(2): p. 73-79. 24. Y. Teng, J. C., C.W. Lu, C. Y. Chen, The carbon distribution in multicrystalline silicon ingots grown using the directional soloification process. Journal of Crystal Growth, 2010: p. 1282-1290. 25. 6.1.2 Silicon Crystal Growth and Wafer Production. 26. R. Kvande, , Growth rate and impurity distribution in multicrystalline silicon for solar cells. Materials Science and Engineering A, 2005. 413: p. 545-549. 27. T. Z hang, , et al., Turbulent transport of oxygen in the Czochralski growth of large silicon crystals. Journal of Crystal Growth, 1999. 198-199(Part 1): p. 141-146. 28. ller, H.J., Oxygen and lattice distortions in multicrystalline silicon. Solar Energy Materials and Solar Cells, 2002. 72(1): p. 403-416. 29. L. Liu, , Carbon concentration and particle precipitation during directional solidification of multicrystalline silicon for solar cells. Journal of Crystal Growth, 2008. 310(7): p. 2192-2197. 30. Hutton, D.V., ed. Fundamentals of Finite Element Analysis. ed. I. Ed. 2004, McGraw-Hill Co. 89 31. DARY L. Logan, A.F.C.i.t.F.E.M., ed., ed. T. Ed. 32. I.-H. Wang, , Research for the Relationship between Temperature Distribution and Process Settings of Unidirectional Solidification Poly-Silicon Ingots. 2008: Taiwan. 33. J. Wei, H.Z., L. Zheng, C. Wang, B. Zhao, Modeling and improvement of silicon ingot directional solidification for industrial production systems. 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Journal of Crystal Growth, 2008. 310(19): p. 4330-4335. 39. V.V. Kalaev, , Gas flow effect on global heat transport and melt convection in Czochralski silicon growth. Journal of Crystal Growth, 2003. 249(1): p. 87-99. 40. L.Y. Huang, , Hot-Zone Design and Analysis of Highly Efficient Czochralski Silicon Growth for Photovolatic Applications. 2004. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/65472 | - |
dc.description.abstract | 為減少製造多晶矽太陽能電池時之電力成本,在光伏產業對於大型多晶矽的鑄錠需求日益增加,日前生產多晶矽的長晶爐約為450公斤左右的爐體,如將爐體提高至600公斤將可降低生長多晶矽單批生產的成本,然而大尺寸的模擬與實驗在過去的文獻少有提到,但其長晶製程參數複雜,如長晶爐的幾何形狀,隔熱器往上提升的速度,頂部引入氬氣的流速等,均會影響矽融湯的溫度場(熱場)分佈與液面形狀及結晶大小與缺陷,及雜質碳氧的分佈,因此需要進一步的探討。又因為矽原料的價格成本高,在初生產時對設備的了解不完全導致浪費,有鑑於此,我們將透過模擬的計算,對長晶爐的溫度分佈及功率消耗進行討論研究。
本研究將針對600公斤討論多晶矽 (multi-crystalline, mc-Si) 的方向性凝固,與不同爐子的設計參數,如石墨坩堝,石墨加熱體、石墨接受板(susceptor)及隔熱罩底部支撐座等尺寸及形狀設計對加熱功率的影響。研究所得模擬結果期望提供未來多晶矽(mc-Si)方向性凝固之長晶爐的製程參數參考,並為改進其熱場區域設計的發展,不同石墨材料之坩堝的發展、隔熱罩/材厚度及熱傳導係數之討論、底部中心柱支撐材的直徑大小對於整體熱通量的影響、氣體導流設計的研究,其對於氬氣消耗的減少、雜質分佈的影響,以改良並使設備升級,期望能降低生產成本及提高晶錠的品質。 | zh_TW |
dc.description.abstract | The photovoltaic industry has demand of large poly-silicon ingot in order to reduce the cost of manufacturing solar panel and electric power. A directional solidification of 600 kg poly-silicon ingot will be successful only with optimal control of complex processing parameters to achieve the desired temperature and impurities distribution. In order to save the expanse of experiment and materials, simulation is an effective and time saving method to obtain the relationship between varied variables. The major works of this study reveal the correlation between power consumption, size and thermal physical properties of furnace critical parts, which include the thickness, thermal conductivities of graphite susceptors and the bottom plates. Calculated temperature distribution and meniscus interface of solidification will be presented with different conditions of geometries and materials properties. The result of simulation show reasonable correlation with the experimental values of power measurement at different solidified parts of silicon melt. It has also found that the thickness and thermal conductivity of graphite susceptor play most important role for the power consumption of crystal growth. | en |
dc.description.provenance | Made available in DSpace on 2021-06-16T23:45:08Z (GMT). No. of bitstreams: 1 ntu-101-R99527035-1.pdf: 6356477 bytes, checksum: d9b0c7fde97562e2f8b1744d227bfc64 (MD5) Previous issue date: 2012 | en |
dc.description.tableofcontents | 誌謝.............................................................................................................................. IV
中文摘要....................................................................................................................... V 英文摘要...................................................................................................................... VI 表目錄........................................................................................................................... X 第一章 序論.................................................................................................................. 1 1.1前言.................................................................................................................. 1 1.2研究動機.......................................................................................................... 4 1.3研究流程.......................................................................................................... 5 第二章 文獻回顧與原理.............................................................................................. 6 2.1多晶鑄造長晶技術.......................................................................................... 6 2.2多晶矽晶錠的雜質探討-氧與碳雜質........................................................ 15 2.3有限元素法(Finite Element method) ............................................................ 21 2.4有限體積法(Finite volume method).............................................................. 23 第三章 系統描述與數值方法.................................................................................... 25 3.1 模擬軟體....................................................................................................... 25 3.1.1 CGSIM有限元素分析軟體 ............................................................... 25 3.1.2 CFD有限體積分析軟體 .................................................................... 28 3.2模型建立與簡化............................................................................................ 29 3.2.1建立多重物理模組(如熱傳導、熱對流、熱輻射及電磁場等). 29 3.2.2模擬模型的簡化................................................................................. 33 3.2.3長晶爐物理現象描述......................................................................... 34 3.3統御方程式.................................................................................................... 35 3.3.1電磁場之統御方程式......................................................................... 35 3.3.2熱傳場之統御方程式......................................................................... 37 3.3.3電磁場與熱傳場的耦合..................................................................... 37 3.3.4流力之統御方程式............................................................................. 38 3.3.5邊界方程式......................................................................................... 39 3.3.6質量傳輸方程式................................................................................. 40 3.4有限元素網格設定........................................................................................ 42 3.5數值模式與網格收斂測試............................................................................ 44 第四章 模擬結果與討論............................................................................................ 45 4.1多晶矽長晶爐熱場模擬之長晶爐功率........................................................ 45 4.2多晶矽長晶爐內部溫度場及流場................................................................ 50 4.3多晶矽長晶爐之固液介面影響.................................................................... 53 4.4多晶矽長晶爐之晶錠品質分析.................................................................... 58 4.4.1熱應力分析......................................................................................... 58 III 4.4.2影響固液介面的因素......................................................................... 64 4.4.3內部流場之渦流速度......................................................................... 64 4.4.4氣體流速的影響................................................................................. 65 4.4.5雜質分佈............................................................................................. 66 4.5多晶矽生長爐體熱場元件設計.................................................................... 70 4.5.1石墨加熱器對功率及固液介面的影響............................................. 70 4.5.2保溫裝置的改良之影響..................................................................... 72 4.5.3氣體導流的設計影響......................................................................... 81 第五章 結論................................................................................................................ 86 第六章 參考文獻........................................................................................................ 87 | |
dc.language.iso | zh-TW | |
dc.title | 600公斤多晶矽長晶功率與製程參數之關係 | zh_TW |
dc.title | Relationships between Power Consumption and Process Settings of 600kg Poly-Silicon | en |
dc.type | Thesis | |
dc.date.schoolyear | 100-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 黃文星(Weng-Sing Hwang),林惠娟(Huey-Jiuan Lin) | |
dc.subject.keyword | 多晶矽,方向性凝固,溫度分佈,耗電功率,熱傳導係數,氣體導流設計,模擬, | zh_TW |
dc.subject.keyword | poly-silicon,directional solidification,temperature and impurities distribution,simulation,power consumption, | en |
dc.relation.page | 89 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2012-07-24 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
顯示於系所單位: | 材料科學與工程學系 |
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