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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/65173完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 管傑雄(Chieh-Hsiung Kuan) | |
| dc.contributor.author | Yi-Chi Chen | en |
| dc.contributor.author | 陳怡吉 | zh_TW |
| dc.date.accessioned | 2021-06-16T23:28:24Z | - |
| dc.date.available | 2017-08-07 | |
| dc.date.copyright | 2012-08-07 | |
| dc.date.issued | 2012 | |
| dc.date.submitted | 2012-07-30 | |
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Lu, Kei May Lau,” GaN-based blue light-emitting diodes grown and fabricated on patterned sapphire substrates by metalorganic vapor-phase epitaxy”, Journal of Crystal Growth 272 (2004) ,pp.327–332 [16] B. Gil, “Group III Nitride Semiconductor Compounds”, Oxford, New York (1998) [17] O. Ambacher,a) J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, and L. F. Eastman, “Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures”, Journal of Applied Physics, Vol. 85,NO. 6, 15 march (1999) [18] O. Ambacher,a) B. Foutz, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy,A. J. Sierakowski, W. J. Schaff, and L. F. Eastman, R. Dimitrov, A. Mitchell, and M. Stutzmann,“Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures”, Journal of Applied Physics, Vol. 87, NO.11,JANUARY(2000) [19] F. Dwikusuma, D. Saulys, and T. F. Kuech,”Study on sapphire surface preparation for III-nitride heteroepitaxial growth by chemical treatments”,Electrochemical Society,149, G603 (2002) [20] J. J. Chen, Y. K. Su, Fellow, IEEE, C. L. Lin, S. M. Chen, W. L. Li, and C. C. Kao,“Enhanced Output Power of GaN-Based LEDs With Nano-Patterned Sapphire Substrates“, IEEE Photonics Technology Letters, Vol.20, NO. 13, JULY 1 (2008) [21] C. C.Wang, H.Ku, C. C. Liu, K. K. Chong, C. I. Hung, Y. H.Wang, andM. P. Houng, “Enhancement of the light output performance for GaN based light-emitting diodes by bottom pillar structure,” Appl. Phys.Lett., vol. 91(2007), pp.121109-1–121109-3 [22] H. Gao, F. Yan, Y. Zhang, J. Li, Y. Zeng, and G.Wang, “Enhancement of the light output power of InGaN/GaN light-emitting diodes grown on pyramidal patterned sapphire substrates in the micro- and nanoscale,”J. Appl. Phys., vol. 103(2008) ,pp.014314-1–014314-5 [23] C. L. Cheung, R. J. Nikolic, C. E. Reinhardt, and T. F. 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Fang, R. Xuan, and C.L. Chao,” Improvement of the droop efficiency in InGaN-based light-emitting diodes by growing on GaN substrate”, Phys. Status Solidi C 9, No. 3–4 (2012),pp.786–789 [29] Q. Dai, M. F. Schubert,M. H. Kim, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer,G. Thaler, and M. A. Banas,” Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities”, Appl. Phys. Lett. 94, 111109 (2009) [30] Y.L. Li,Y.R. Huang, and Y.H. Lai,” Efficiency droop behaviors of InGaN/GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness”, Appl. Phys. Lett. 91, 181113 (2007) | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/65173 | - |
| dc.description.abstract | 近幾年來許多相關研究致力於氮化鎵發光二極體之發光效率的提升，由於氮化鎵主要成長於藍寶石基板上，兩者之間晶格常數和熱膨脹係數差異造成晶格不匹配，導致氮化鎵的磊晶品質降低，且材料本身擁有的極化現象會造成元件主動層發生量子侷限史塔克效應，進而使發光二極體的內部量子效率下降。為解決此問題，我們以實驗室搭載的電子束微影系統搭配濕式蝕刻技術製作出奈米大小之孔洞結構和柱狀結構圖案化藍寶石基板，並設計圖案直徑或間距大小以及改變蝕刻時間，且利用聚焦式離子束電子束顯微系統確認製作完成的藍寶石基板圖案是否正確。本論文主要欲探討氮化鎵成長在藍寶石基板上時，兩材料間之接面過渡層中氮化鎵與藍寶石基板所佔比例關係是否影響元件特性。 | zh_TW |
| dc.description.abstract | Recently, many studies have dedicated to the improvement of the efficiency of GaN-based light-emitting diode (LEDs). GaN-based LEDs are typically grown along the c-plane sapphire substrates. However, the difference between lattice constant and thermal expansion coefficient result in the lattice mismatch, which causes the reduction of the quality of GaN epilayer.In addition, the internal quantum efficiency will be degraded because of the lattice mismatch, induced related polarization filed, called quantum confined stark effect (QCSE). In order to overcome the problem, electron-beam lithography and wet-etching technology are used to achieve NPSSs with exact dimensions in the experiment. The air hexagonal arrays are fabricated on the c-plane sapphire substrate under different wet-etching conditions. The surface morphology, periodicity, depth, space, and diameter of accomplished NPSSs are re-examined with the instrument of FEI Dual-Beam NOVA 600i Focused Ion Beam. Next, the InGaN-based LED samples are grown on the NPSSs with an atmospheric-pressure metal organic chemical vapor deposition (AP-MOCVD) . To accomplish the accuracy of the measured data, the micro-photoluminescence (μ-PL) spectroscope is equipped with the C-Focus system, which corrects microscopefocus drift. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-16T23:28:24Z (GMT). No. of bitstreams: 1 ntu-101-R99943112-1.pdf: 6652562 bytes, checksum: 344821bd3d4fa6ca4d29a696c500f708 (MD5) Previous issue date: 2012 | en |
| dc.description.tableofcontents | 口試委員會審定書………………………………………………………………… Ⅰ
誌謝………………………………………………………………………………… Ⅲ 中文摘要…………………………………………………………………………… Ⅳ 英文摘要…………………………………………………………………………… Ⅴ 目錄………………………………………………………………………………… Ⅵ 圖目錄……………………………………………………………………………… Ⅷ 表目錄 …………………………………………………………………………… XI 第一章 概論………………………………………………………………………… 1 1.1 前言……………………………………………………………………… 1 1.2 研究動機與目的………………………………………………………… 3 1.3 論文架構………………………………………………………………… 5 第二章 基礎理論與晶格材料分析………………………………………………… 6 2.1 藍寶石基板簡介………………………………………………………… 6 2.2 氮化鎵半導體晶體特性………………………………………………… 8 2.2.1 晶體結構 ………………………………………………………… 8 2.2.2 應變的產生……………………………………………………… 10 2.2.3 極化場…………………………………………………………… 11 第三章 實驗方法與製備 ………………………………………………………… 15 3.1 製程/量測儀器簡介…………………………………………………… 15 3.1.1 電子束微影(E-BeamLithography)…………………………… 15 3.1.2 掃描式電子顯微鏡(SEM)……………………………………… 16 3.1.3 聚焦離子束(FIB)……………………………………………… 18 3.1.4 電子槍蒸鍍系統(E-Gun)……………………………………… 18 3.2元件製作流程……………………………………………………………… 20 3.2.1 奈米孔洞結構圖案化藍寶石基板製作流程……………………… 20 3.2.2 磊晶結構-奈米孔洞結構圖案化藍寶石基板…………………… 26 3.2.3 奈米柱狀結構圖案化藍寶石基板製作流程…………………… 28 3.2.4 磊晶結構-奈米柱狀結構圖案化藍寶石基板…………………… 34 第四章 實驗設計與量測分析…………………………………………………… 35 4.1 孔洞結構與蝕刻時間之晶面探討……………………………………… 36 4.2 探討孔洞結構圖案化藍寶石基板對元件特性………………………… 40 4.2.1 實驗Ⅰ-間距固定，改變孔洞表面直徑………………………… 41 4.2.2 實驗Ⅰ-量測與分析……………………………………………… 43 4.2.3 實驗Ⅰ-討論……………………………………………………… 47 4.2.4 實驗Ⅱ-改變間距，固定孔洞表面直徑………………………… 49 4.2.5 實驗Ⅱ-量測與分析……………………………………………… 51 4.2.6 實驗Ⅱ-討論……………………………………………………… 55 4.3 柱狀結構與蝕刻時間之晶面探討……………………………………… 57 4.4 探討柱狀結構圖案化藍寶石基板對元件特性………………………… 61 4.4.1 實驗Ⅲ-改變間距，固定柱狀頂部直徑(高度約300nm)……… 62 4.4.2 實驗Ⅲ-量測與分析……………………………………………… 64 4.4.3 實驗Ⅲ-討論……………………………………………………… 68 4.4.4 實驗Ⅳ-改變間距，固定柱狀頂部直徑(高度約440nm)……… 69 4.4.5 實驗Ⅳ-量測與分析……………………………………………… 71 4.4.6 實驗Ⅳ-討論……………………………………………………… 75 4.5 量測結果統整與理論分析……………………………………………… 77 第五章 結論……………………………………………………………………… 78 參考文獻 ………………………………………………………………………… 79 | |
| dc.language.iso | zh-TW | |
| dc.subject | 圖案化藍寶石基板 | zh_TW |
| dc.subject | 量子侷限史塔克效應 | zh_TW |
| dc.subject | 奈米結構 | zh_TW |
| dc.subject | 氮化鎵發光二極體 | zh_TW |
| dc.subject | 電子束微影 | zh_TW |
| dc.subject | NPSSs | en |
| dc.subject | MOCVD | en |
| dc.subject | QCSE | en |
| dc.subject | Light-emitting diode | en |
| dc.subject | Wet-etching | en |
| dc.subject | Electron-beam lithography | en |
| dc.title | 利用奈米圖案化藍寶石基板以增強氮化鎵發光二極體之光輸出功率 | zh_TW |
| dc.title | Using Nano-Patterned Sapphire Substrates to Enhance Light Output Intensity of GaN-Based Light-Emitting Diodes | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 100-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 孫允武(Yuen-Wuu Suen),孫建文(Kien-Wen Sun) | |
| dc.subject.keyword | 氮化鎵發光二極體,圖案化藍寶石基板,電子束微影,量子侷限史塔克效應,奈米結構, | zh_TW |
| dc.subject.keyword | Light-emitting diode,QCSE,MOCVD,NPSSs,Electron-beam lithography,Wet-etching, | en |
| dc.relation.page | 83 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2012-07-31 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
| 顯示於系所單位： | 電子工程學研究所 | |
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