請用此 Handle URI 來引用此文件：
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/65114完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 翁宗賢(Tzong-Shyan Wung) | |
| dc.contributor.author | Chun-An Chen | en |
| dc.contributor.author | 陳俊安 | zh_TW |
| dc.date.accessioned | 2021-06-16T23:25:44Z | - |
| dc.date.available | 2017-08-15 | |
| dc.date.copyright | 2012-08-15 | |
| dc.date.issued | 2012 | |
| dc.date.submitted | 2012-07-31 | |
| dc.identifier.citation | [1] W. D. Frobenius, et al., 'Microminiature ganged threshold accelerometers compatible with integrated circuit technology,' Electron Devices, IEEE Transactions on, vol. 19, pp. 37-40, 1972.
[2] J. S. Go, et al., 'Snapping microswitches with adjustable acceleration threshold,' Sensors and Actuators A: Physical, vol. 54, pp. 579-583, 1996. [3] B. J. Hansen , et al., 'Plastic latching accelerometer based on bistable compliant mechanisms,' Smart Materials and Structures, vol. 16, p. 1967, 2007. [4] Z. Jian, et al., 'A Novel Threshold Accelerometer With Postbuckling Structures for Airbag Restraint Systems,' Sensors Journal, IEEE, vol. 7, pp. 1102-1109, 2007. [5] Z. Jian, et al., 'A Novel MEMS Parallel-beam Acceleration Switch,' in Mechatronic and Embedded Systems and Applications, Proceedings of the 2nd IEEE/ASME International Conference on, 2006, pp. 1-5. [6] S. Arjun , et al., 'A wide-range micromachined threshold accelerometer array and interface circuit,' Journal of Micromechanics and Microengineering, vol. 11, p. 118, 2001. [7] F.L. Liu and Y.P. Hao, “Characteristic analysis and simulation for polysilicon comb micro accelerometer”, Proc. of SPIE Vol. 7127 71270K-1. [8] D. R. Ciarlo, 'A latching accelerometer fabricated by the anisotropic etching of (110) oriented silicon wafers,' Journal of Micromechanics and Microengineering, vol. 2, p. 10, 1992. [9]Daniel Jean, “Integrated MEMS mechanical shock sensor”, NDIA Fuse, April 26-28, 2004, Charlotte, NC, USA. [10]Y.P. Wang, R.Q. Hsu, C.W. Wu, “Design and Simulation of a MEMS High G Inertial Impact Sensor”, SAS 2008 – IEEE Sensors Applications Symposium, Atlanta, GA, February 12-14, 2008. [11] L. F. G.L.Smith, R. Balestrieri, and D.Jean, Micromechanical Shock Sensor, U.S. Patent 6737979, 2004. [12] D. Jean, 'MEMS multi-directional shock sensor,' U.S. Patent 7159442, 2007. [13] X. Y. Zhang, et al., 'An acceleration latching switch with flexible contacts and barb latching mechanism,' in Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on, 2010, pp. 1495-1497. [14] Z. Y. Guo, et al., 'An acceleration switch with a robust latching mechanism and cylindrical contacts,' Journal of Micromechanics and Microengineering, vol. 20, p. 055006, 2010. [15] Z. Y. Guo, et al., 'Design, fabrication and characterization of a latching acceleration switch with multi-contacts independent to the proof-mass,' Sensors and Actuators A: Physical, vol. 166, pp. 187-192, 2011. [16] W. Benecke, and W. Riethmuller, “Applications of silicon-microactuators based on bimorph structures”, Proceedings of the IEEE MEMS’89 Workshop, 116- 120, Salt Lake City, UT, February 1989. [17] Chi Shiang Pany and Wensyang Hsu, “An electro-thermally and laterally driven poly-silicon micro-actuator”, IOP Publishing Ltd, 1997. [18] O. Andojo and E. H. T. Francis, 'Optimized design of a micromachined G-switch based on contactless configuration for health care applications,' Journal of Physics: Conference Series, vol. 34, p. 1044, 2006. [19] O. T. Yogesh B. Gianchandani, Hans Zappe, Comprehensive Microsystems, p. 170, Elsevier, 2007. [20] Y. Kwanghyun and K. Joonwon, 'A Novel Configurable MEMS Inertial Switch using Microscale Liquid-Metal Droplet,' in Micro Electro Mechanical Systems, 2009. MEMS 2009. IEEE 22nd International Conference on, 2009, pp. 793-796. [21] S. McNamara and Y. B. Gianchandani, 'LIGA fabricated 19-element threshold accelerometer array,' Sensors and Actuators A: Physical, vol. 112, pp. 175-183, 2004. [22] 劉孟杰，離心加速度開關之設計與模擬，國立台灣大學應用力學研究所碩士論文，2011年。 [23] 柯竑廷，高G值加速度開關之設計與衝擊模擬分析，國立台灣大學應用力學研究所碩士論文，2011年。 [24] M. R. Whitley, et al., 'Latching shock sensors for health monitoring and quality control,' MEMS/MOEMS Components and Their Applications II, pp. 185-194, 2005. [25] J. O.Hallquist, LS-DYNA Theoretical Manual, 1998. [26] C. W. Hirt, et al., 'An arbitrary Lagrangian-Eulerian computing method for all flow speeds,' Journal of Computational Physics, vol. 14, pp. 227-253, 1974. [27] T. B. Belytschko and J. M. Kennedy, 'Computer models for subassembly simulation,' Nuclear Engineering and Design, vol. 49, pp. 17-38, 1978. [28] 趙海鷗，LS-DYNA動力分析指南，兵器工業出版社，北京市，2003。 [29] Matthew A. Hopcroft, William D. Nix and Thomas W. Kenny, 'What is the Young's Modulus of Silicon?,' jornal of microelectromechanical system,vol.19, no. 2, april 2010. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/65114 | - |
| dc.description.abstract | 加速度開關是具有特定用途的感測元件，是加速度計的一種型式，當加速度到達定限值(threshold)，開關即開啟，進入鎖定狀態，接觸元件輸出訊號，以觸發後續致動程序。近年來隨著科技的進步，微奈米機電製程技術日益成熟，除了降低微感測器與微致動器的成本與體積，也大幅提高可靠度及加速度的量測範圍。微奈米機電系統的產品應用越來越多元，除了以往的汽車產業、航太與國防工業之外，現今還大量應用於家庭照護、智慧型手機與遊樂器材等，帶來廣大商機。
本文所設計的加速度開關應用於高G值的衝擊環境，為降低研究成本，節省試製及量產前的經費與研發時間，利用CAD輔助設計軟體建立模型，匯入CAE輔助分析軟體進行動態模擬，施加美軍MIL-STD 883E規範之衝擊負載，計算並分析加速度開關在此衝擊歷程下，是否可以達到預期的開關作動，並檢視應力分佈，確保組件不產生應力集中或破壞現象。 經過CAE模擬，本文所設計之加速度開關可在450G及1100G的加速度環境下正常運作，當加速度到達定限值，卡榫機構成功鎖定，接觸元件作動情形符合預先設計。作動過程中的最大應力分別為128MPa與152MPa，僅為材料破壞應力的42%與50.7%，可確保結構不被破壞。模擬完成後，根據各項設計與模擬結果，在SOI晶圓上，以微奈米機電製程技術進行試製，成功製作出所設計的微型加速度開關，最後經切割與封裝，組裝在離心機台上做加速度測試，實驗結果證實製造出的晶片符合預期目標，當加速度達到定限值後，卡榫機構即能鎖定，輸出穩定的訊號。鎖定後的加速度開關能以1V的直流電快速解除鎖定狀態，使加速度開關可重複使用。 | zh_TW |
| dc.description.abstract | Nowadays the acceleration switch, a special type of accelerometer, has become one of peculiar sensing devices. As the acceleration reaches a threshold, the switch turns into locked state, and the contact components export a signal which can trigger the subsequent action. In recent years, rapid progressive technologies enable micro-nano electro-mechanical systems (MEMS) to develop more sophisticated functionality. Modern MEMS not only reduce the cost and scale, but also improve the reliability and the measuring range of accelerations. The products penetrate into many major businesses, such as home care systems, smart phones, amusement equipment, in addition to the traditional automotive industry, aerospace and defense industries.
In this thesis, we aimed to design acceleration switches which are applicable to the impact of high-G environment. In order to reduce research cost and time, we utilized computer assisted design (CAD) software to create models, then imported to computer assisted engineering (CAE) software for dynamic simulation. From the analysis results, we validated that the G-switches can function well to fulfill the impact specifications of MIL-STD 883E conditions. As the accelerations reach their respective thresholds, the latch mechanism was successfully locked up, the contact elements delivered the touched signal, and materials of the switches did not damaged. Based on the simulation results, we employed MEMS processing technology to fabricate our designs of acceleration switches on SOI wafers. Upon cutting and simple packaging, the switches were examined on a centrifugal machine which was adjusted to specific acceleration levels. The tests proved that all acceleration switches were satisfactorily manufactured and functioned properly to meet the severe impact conditions. The latched mechanism could be quickly released by applying 1V DC power to the releasing device. This thermally releasing device allows the acceleration switch to reuse again. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-16T23:25:44Z (GMT). No. of bitstreams: 1 ntu-101-R99543078-1.pdf: 5159667 bytes, checksum: 0f6ceaa225aa3649d8787fcae6c1b327 (MD5) Previous issue date: 2012 | en |
| dc.description.tableofcontents | 中文摘要 I
Abstract II 目錄 III 圖目錄 VI 表目錄 XI 符號表 XII 第一章 緒論 1 1-1 前言 1 1-2 文獻回顧 2 1-3 研究動機與目的 4 1-4 本文架構 5 第二章 模擬原理與流程 12 2-1 模擬原理 12 2-1-1 空間網格描述法 12 2-1-2 統御方程式 14 2-1-3 時間積分法 17 2-1-4 時間步階 19 2-1-5 接觸演算法 20 2-2 模擬流程 21 2-2-1 單位決定 22 2-2-2 元素類型 22 2-2-3 材料參數 23 2-2-4 網格劃分 23 2-2-5 邊界條件 25 2-2-6 設定碰撞 25 2-2-7 負載設定 26 2-2-8 計算時間長度與時間步階 26 2-2-9 計算求解 27 2-2-10 後處理 27 2-2-11 失效判定 28 第三章 加速度開關之設計與模擬結果 38 3-1 加速度開關之原理與設計 38 3-1-1 運作原理 38 3-1-2 加速度計種類 39 3-1-3 質量彈簧阻尼系統 41 3-1-4 本文加速度開關設計 42 3-1-5 初步模型建立 44 3-2 模擬結果 46 3-2-1 整體運作情形 46 3-2-2 卡榫機構與接觸器 47 3-2-3 應力分析 48 3-3 各元件共振頻率與振盪頻率之關係 48 第四章 加速度開關之研製與測試 75 4-1 前置作業 75 4-1-1 SOI晶圓 75 4-1-2 光罩設計 76 4-1-3 製程規劃 76 4-2 微影製程 76 4-2-1 光阻塗佈 77 4-2-2 曝光 77 4-2-3 顯影 78 4-3 蝕刻 79 4-3-1 組件層之矽蝕刻 79 4-3-2 犧牲層之蝕刻 80 4-4 後續製程 81 4-4-1 鍍膜 81 4-4-2 封裝 82 4-5 測試結果 82 第五章 結論與未來展望 111 5-1 結論 111 5-2 未來展望 112 參考文獻 113 | |
| dc.language.iso | zh-TW | |
| dc.subject | 衝擊模擬 | zh_TW |
| dc.subject | 加速度開關 | zh_TW |
| dc.subject | 高G值衝擊 | zh_TW |
| dc.subject | 微機電系統 | zh_TW |
| dc.subject | acceleration switch | en |
| dc.subject | high G impact | en |
| dc.subject | impact simulation | en |
| dc.title | 微型化高G值加速度開關之設計與研製 | zh_TW |
| dc.title | Design and Fabrication of Micro High-G Acceleration Switch | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 100-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 邱銘漢(Ming-Han Chiu),沈弘俊(Horn-Jiunn Sheen) | |
| dc.subject.keyword | 加速度開關,高G值衝擊,衝擊模擬,微機電系統, | zh_TW |
| dc.subject.keyword | acceleration switch,high G impact,impact simulation, | en |
| dc.relation.page | 115 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2012-07-31 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 應用力學研究所 | zh_TW |
| 顯示於系所單位： | 應用力學研究所 | |
文件中的檔案：
| 檔案 | 大小 | 格式 | |
|---|---|---|---|
| ntu-101-1.pdf 未授權公開取用 | 5.04 MB | Adobe PDF |
系統中的文件，除了特別指名其著作權條款之外，均受到著作權保護，並且保留所有的權利。