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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 郭茂坤(Mao-Kuen Kuo) | |
dc.contributor.author | Han-Yun Jhang | en |
dc.contributor.author | 張瀚允 | zh_TW |
dc.date.accessioned | 2021-06-16T23:21:59Z | - |
dc.date.available | 2012-08-09 | |
dc.date.copyright | 2012-08-09 | |
dc.date.issued | 2012 | |
dc.date.submitted | 2012-07-31 | |
dc.identifier.citation | [1] P. Harrison, Quantum Wells, Wires and Dots: theoretical and computational physics. New York: John Wiley&Sons, 2000.
[2] J. Singh, Electronic and Optoelectric Properties of Semiconductor Structures. The Pitt Building, Trumpington Street, Cambridge, United Kingdom, 2003. [3] J. Piprek, P. Abraham, and J. E. Bowers, 'Carrier nonuniformity effects on the internal efficiency of multiquantum-well lasers', Applied physics letters 74, 489, 1999. [4] M. Henini and M. Razeghi, Optoelectronic devices: III-Nitrides: Elsevier Science, 2005. [5] H. Liu, I. Sellers, T. Badcock, D. Mowbray, M. Skolnick, K. Groom, M. Gutierrez, M. Hopkinson, J. Ng, and J. David, 'Improved performance of 1.3 μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer', Applied physics letters 85, 704, 2004. [6] J. Ulloa, I. Drouzas, P. Koenraad, D. Mowbray, M. Steer, H. Liu, and M. Hopkinson, 'Suppression of InAs/GaAs quantum dot decomposition by the incorporation of a GaAsSb capping layer', Applied Physics Letters 90, 213105, 2007. [7] H. Liu, M. Steer, T. Badcock, D. Mowbray, M. Skolnick, F. Suarez, J. Ng, M. Hopkinson, and J. David, 'Room-temperature 1.6 μm light emission from InAs/ GaAs quantum dots with a thin GaAsSb cap layer', Journal of Applied Physics 99, 046104, 2006. [8] J. Y. Marzin, J. M. Gérard, A. Izraël, D. Barrier, and G. Bastard, 'Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAs', Physical Review Letters 73, 716-719, 1994. [9] M. Miller, S. Jeppesen, K. Georgsson, B. Kowalski, J. O. Malm, M. E. Pistol, and L. Samuelson, 'Vertically-Stacked InAs Islands Between GaAs Barriers Grown by Chemical Beam Epitaxy', 1995. [10] Z. Wasilewski, S. Fafard, and J. McCaffrey, 'Size and shape engineering of vertically stacked self-assembled quantum dots', Journal of crystal growth 201, 1131-1135, 1999. [11] X. Q. Meng, B. Xu, P. Jin, X. Ye, Z. Zhang, C. Li, and Z. Wang, 'Dependence of optical properties on the structure of multi-layer self-organized InAs quantum dots emitting near 1.3 μm', Journal of crystal growth 243, 432-438, 2002. [12] K. Akahane, N. Yamamoto, S. Gozu, and N. Ohtani, 'Strong photoluminescence and laser operation of InAs quantum dots covered by a GaAsSb strain-reducing layer', Physica E: Low-dimensional Systems and Nanostructures 26, 395-399, 2005. [13] H. Liu, M. Steer, T. Badcock, D. Mowbray, M. Skolnick, P. Navaretti, K. Groom, M. Hopkinson, and R. Hogg, 'Long-wavelength light emission and lasing from InAs/ GaAs quantum dots covered by a GaAsSb strain-reducing layer', Applied Physics Letters 86, 143108, 2005. [14] H. Shimizu and S. Saravanan, 'Comparison of buffer material for InAs quantum dots on GaAs substrate', 197-200, 2006. [15] J. M. Ripalda, D. Alonso-Álvarez, B. Alén, A. Taboada, J. M. García, Y. González, and L. González, 'Enhancement of the room temperature luminescence of InAs quantum dots by GaSb capping', Applied Physics Letters 91, 012111-012111-3, 2007. [16] Y. Jang, T. Badcock, D. Mowbray, M. Skolnick, J. Park, D. Lee, H. Liu, M. Steer, and M. Hopkinson, 'Carrier lifetimes in type-II InAs quantum dots capped with a GaAsSb strain reducing layer', Applied Physics Letters 92, 251905-251905-3, 2008. [17] Y. Wu, L. Chang, P. Lin, C. Chiang, J. Chen, and T. Chi, 'Structural and optical properties of buried InAs/GaAs quantum dots on GaAsSb buffer layer', Journal of Physics D: Applied Physics 42, 185106, 2009. [18] J. Ulloa, R. Gargallo-Caballero, M. Bozkurt, M. Del Moral, A. Guzmán, P. Koenraad, and A. Hierro, 'GaAsSb-capped InAs quantum dots: From enlarged quantum dot height to alloy fluctuations', Physical Review B 81, 165305, 2010. [19] K. Y. Ban, S. P. Bremner, G. Liu, S. N. Dahal, P. C. Dippo, A. G. Norman, and C. B. Honsberg, 'Use of a GaAsSb buffer layer for the formation of small, uniform, and dense InAs quantum dots', Applied Physics Letters 96, 183101, 2010. [20] P. Klenovský, V. Křápek, D. Munzar, and J. Humlíček, 'Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties', Applied Physics Letters 97, 203107, 2010. [21] A. Hospodková, E. Hulicius, J. Pangrác, J. Oswald, J. Vyskocil, K. Kuldová, T. Simecek, P. Hazdra, and O. Caha, 'InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots', Journal of Crystal Growth 312, 1383-1387, 2010. [22] W. T. Hsu, Y. A. Liao, S. K. Lu, S. J. Cheng, P. C. Chiu, J. I. Chyi, and W. H. Chang, 'Tailoring of the Wave Function Overlaps and the Carrier Lifetimes in InAs/GaAs1-xSbx Type-II Quantum Dots', Physica E: Low-dimensional Systems and Nanostructures 42, 2524-2528, 2010. [23] W. T. Hsu, Y. A. Liao, F. C. Hsu, P. C. Chiu, J. I. Chyi, and W. H. Chang, 'Effects of GaAsSb capping layer thickness on the optical properties of InAs quantum dots', Applied Physics Letters 99, 073108, 2011. [24] M. Montes, J. Ulloa, M. del Moral, A. Guzman, and A. Hierro, 'Near infrared InAs/GaAsSb quantum dot LEDs', Quantum Electronics, IEEE Journal of, 1-1, 2011. [25] C. Pryor, J. Kim, L. Wang, A. Williamson, and A. Zunger, 'Comparison of two methods for describing the strain profiles in quantum dots', Journal of applied physics 83, p. 2548, 1998. [26] O. Stier, M. Grundmann, and D. Bimberg, 'Electronic and optical properties of strained quantum dots modeled by 8-band kp theory', Physical Review B 59, 5688-5701, 1999. [27] A. Fantini, F. Phillipp, C. Kohler, J. Porsche, and F. Scholz, 'Investigation of self-assembled InP–GaInP quantum dot stacks by transmission electron microscopy', Journal of crystal growth 244, 129-135, 2002. [28] R. Marchetti, F. Montalenti, L. Miglio, G. Capellini, M. De Seta, and F. Evangelisti, 'Strain-induced ordering of small Ge islands in clusters at the surface of multilayered Si–Ge nanostructures', Applied Physics Letters 87, 261919, 2005. [29] A. Yakimov, A. Dvurechenskii, A. Nikiforov, A. Bloshkin, A. Nenashev, and V. Volodin, 'Electronic states in Ge/ Si quantum dots with type-II band alignment initiated by space-charge spectroscopy', Physical Review B 73, 115333, 2006. [30] A. Schliwa, M. Winkelnkemper, and D. Bimberg, 'Impact of size, shape, and composition on piezoelectric effects and electronic properties of In (Ga) As/ GaAs quantum dots', Physical Review B 76, 205324, 2007. [31] M. Grundmann, O. Stier, and D. Bimberg, 'InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structure', Physical Review B 52, 11969, 1995. [32] T. Benabbas, P. Francois, Y. Androussi, and A. Lefebvre, 'Stress relaxation in highly strained InAs/GaAs structures as studied by finite element analysis and transmission electron microscopy', Journal of applied physics 80, 2763-2767, 1996. [33] T. Benabbas, Y. Androussi, and A. Lefebvre, 'A finite-element study of strain fields in vertically aligned InAs islands in GaAs', Journal of applied physics 86 1945, 1999. [34] G. Muralidharan, 'Strains in InAs quantum dots embedded in GaAs: A finite element study', Japanese Journal of Applied Physics 39, 658, 2000. [35] G. Liu and S. Jerry, 'A finite element study of the stress and strain fields of InAs quantum dots embedded in GaAs', Semiconductor science and technology 17, 630, 2002. [36] M. Kuo, T. Lin, K. Hong, B. Liao, H. Lee, and C. Yu, 'Two-step strain analysis of self-assembled InAs/GaAs quantum dots', Semiconductor science and technology 21, 626, 2006. [37] J. D. Eshelby, 'The determination of the elastic field of an ellipsoidal inclusion, and related problems', Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences 241, 376-396, 1957. [38] J. Eshelby, 'The elastic field outside an ellipsoidal inclusion', Proceedings of the Royal Society of London. Series A, Mathematical and Physical Sciences, 561-569, 1959. [39] D. A. Faux, J. R. Downes, and E. P. OReilly, 'A simple method for calculating strain distributions in quantum‐wire structures', Journal of applied physics 80, 2515-2517, 1996. [40] J. Downes, D. Faux, and E. O’Reilly, 'A simple method for calculating strain distributions in quantum dot structures', Journal of applied physics 81, 6700, 1997. [41] G. Pearson and D. Faux, 'Analytical solutions for strain in pyramidal quantum dots', Journal of Applied Physics 88, 730, 2000. [42] M. Kuo, T. Lin, B. Liao, and C. Yu, 'Strain effects on optical properties of pyramidal InAs/GaAs quantum dots', Physica E: Low-dimensional Systems and Nanostructures 26, 199-202, 2005. [43] R. F. C. Farrow, Molecular Beam Epitaxy: Applications to Key Materials. New Jersey: Noyes Publications, 1995. [44] D. Bimberg, M. Grundmann, and N. N. Ledentsov, Quantum dot heterostructures. West Sussex: John Wiley, 1999. [45] J. MARKS, J. SCHINDLER, and C. R. KANNEWURF, 'Metalorganic chemical vapor deposition', 1982. [46] H. O. Pierson, Handbook of Chemical Vapor Deposition: Principles, Technology and Applications, 2nd Ed. New York: Noyes Publications, 1999. [47] http://cnx.org/content/m16927/latest/#id6799244. [48] N. W. Ashcroft and N. D. Mermin, Solid State Physics. London: Cole, 1976. [49] C. Kittel, Introduction to Solid State Physics. New York: John Wiley, 1995. [50] N. Baer, S. Schulz, S. Schumacher, P. Gartner, G. Czycholl, and F. Jahnke, 'Optical properties of self-organized wurtzite InN/ GaN quantum dots: A combined atomistic tight-binding and full configuration interaction calculation', Applied Physics Letters 87, 231114, 2005. [51] S. Schulz, S. Schumacher, and G. Czycholl, 'Spin-orbit coupling and crystal-field splitting in the electronic and optical properties of nitride quantum dots with a wurtzite crystal structure', The European Physical Journal B-Condensed Matter and Complex Systems 64, 51-60, 2008. [52] M. Lorke, J. Seebeck, P. Gartner, F. Jahnke, and S. Schulz, 'Excitation-induced energy shifts in the optical gain spectra of InN quantum dots', Applied Physics Letters 95, 081108, 2009. [53] J. Singh and I. Ebrary, Quantum Mechanics: Fundamentals and applications to technology: Wiley Online Library, 1997. [54] L. W. Wang, J. Kim, and A. Zunger, 'Electronic structures of [110]-faceted self-assembled pyramidal InAs/GaAs quantum dots', Physical Review B 59, 5678, 1999. [55] M. Winkelnkemper, R. Seguin, S. Rodt, A. Hoffmann, and D. Bimberg, 'GaN/AlN quantum dots for single qubit emitters', Journal of Physics: Condensed Matter 20, 454211, 2008. [56] J. Even, 'Symmetry analysis and exact model for the elastic, piezoelectric, and electronic properties of inhomogeneous and strained wurtzite quantum nanostructures', Applied Physics Letters 94, 102105, 2009. [57] S. Tomić and N. Vukmirović, 'Excitonic and biexcitonic properties of single GaN quantum dots modeled by 8-band k⋅ p theory and configuration-interaction method', Physical Review B 79, 245330, 2009. [58] K. Barnham and D. Vvedensky, Low-dimensional semiconductor structures: fundamentals and device applications: Cambridge Univ Pr, 2008. [59] A. Hospodková, V. Křápek, K. Kuldová, J. Humlíček, E. Hulicius, J. Oswald, J. Pangrác, and J. Zeman, 'Photoluminescence and magnetophotoluminescence of vertically stacked InAs/GaAs quantum dot structures', Physica E: Low-dimensional Systems and Nanostructures 36, 106-113, 2007. [60] J. Andrzejewski, G. Sek, E. OReilly, A. Fiore, and J. Misiewicz, 'Eight-band k∙ p calculations of the composition contrast effect on the linear polarization properties of columnar quantum dots', Journal of Applied Physics 107, 073509-073509-12, 2010. [61] R. Pässler, 'Parameter sets due to fittings of the temperature dependencies of fundamental bandgaps in semiconductors', physica status solidi(b) 216 975-1007, 1999. [62] L. Viña, S. Logothetidis, and M. Cardona, 'Temperature dependence of the dielectric function of germanium', Physical Review B 30, 1979-1991, 1984. [63] http://ecee.colorado.edu/~bart/book/eband5.htm. [64] D. Gershoni, C. Henry, and G. Baraff, 'Calculating the optical properties of multidimensional heterostructures: Application to the modeling of quaternary quantum well lasers', Quantum Electronics, IEEE Journal of 29, 2433-2450, 1993. [65] I. Vurgaftman, J. Meyer, and L. Ram-Mohan, 'Band parameters for III–V compound semiconductors and their alloys', Journal of applied physics 89, 5815, 2001. [66] S. de Gironcoli, S. Baroni, and R. Resta, 'Piezoelectric properties of III-V semiconductors from first-principles linear-response theory', Physical review letters 62, 2853-2856, 1989. [67] H. Landolt, R. Börnstein, K. H. Hellwege, J. Goodenough, M. Schulz, and H. Weiss, Landolt-Börnstein numerical data and functional relationships in science and technology: Crystal and solid state physics. Semiconductors 17, Springer, 1984. [68] S. H. Wei and A. Zunger, 'Calculated natural band offsets of all II–VI and III–V semiconductors: Chemical trends and the role of cation d orbitals', Applied physics letters 72, 2011, 1998. [69] S. Adachi, P. Capper, and S. Kasap, Properties of semiconductor alloys: group-IV, III-V and II-VI semiconductors 29: John Wiley & Sons Inc, 2009. [70] S. Tomić, 'Intermediate-band solar cells: Influence of band formation on dynamical processes in InAs/GaAs quantum dot arrays', Physical Review B 82, 195321, 2010. [71] S. L. Chuang, 'Physics of optoelectronic devices', 1995. [72] X. D. Wang, N. Liu, C. Shih, S. Govindaraju, and A. Holmes Jr, 'Spatial correlation-anticorrelation in strain-driven self-assembled InGaAs quantum dots', Applied physics letters 85, 1356, 2004. [73] P. Klenovský, V. Křápek, D. Munzar, and J. Humlíček, 'Modelling of electronic states in InAs/GaAs quantum dots with GaAsSb strain reducing overlayer', 012086, 2010. [74] D. Bruls, J. Vugs, P. Koenraad, H. Salemink, J. Wolter, M. Hopkinson, M. Skolnick, F. Long, and S. Gill, 'Determination of the shape and indium distribution of low-growth-rate InAs quantum dots by cross-sectional scanning tunneling microscopy', Applied physics letters 81, 1708, 2002. [75] E. Alsema, 'Energy pay‐back time and CO2 emissions of PV systems', Progress in Photovoltaics: Research and Applications 8, 17-25, 2000. [76] W. Shockley and H. J. Queisser, 'Detailed balance limit of efficiency of p‐n junction solar cells', Journal of Applied Physics 32, 510-519, 1961. [77] R. R. King, 'Multijunction cells: Record breakers', Nature Photonics 2, 284-286, 2008. [78] A. Nozik, 'Quantum dot solar cells', Physica E: Low-dimensional Systems and Nanostructures 14, 115-120, 2002. [79] M. A. Green, 'Third generation photovoltaics: Ultra‐high conversion efficiency at low cost', Progress in Photovoltaics: Research and Applications 9, 123-135, 2001. [80] A. Luque and A. Martí, 'The intermediate band solar cell: Progress toward the realization of an attractive concept', Advanced Materials 22, 160-174, 2010. [81] A. Luque and A. Martí, 'Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels', Physical Review Letters 78, 5014-5017, 1997. [82] A. Marti, E. Antolin, C. Stanley, C. Farmer, N. Lopez, P. Diaz, E. Canovas, P. Linares, and A. Luque, 'Production of photocurrent due to intermediate-to-conduction-band transitions: a demonstration of a key operating principle of the intermediate-band solar cell', Physical Review Letters 97, 247701, 2006. [83] S. N. Dahal, S. P. Bremner, and C. B. Honsberg, 'Band structure calculation for quantum dot solar cells using kp method', 1-4, 2008 | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/65082 | - |
dc.description.abstract | 本文旨在研究銻砷化鎵應力緩衝層對砷化銦鎵量子點結構光電性質之影響。文中以線性彈性力學與k•p理論,配合有限元素法估算量子點形狀、材料濃度,以及緩衝層對於量子點結構與光電性質之效應。
研究發現銻砷化鎵應力緩衝層將可降低量子點結構之應變量。而當緩衝層厚度高於量子點高度,量子點結構之應變減少量較大,並以緩衝層完全包覆量子點之應變減少量最大。緩衝層厚度與磊晶順序也將影響量子點結構之光電性質。當緩衝層厚度不及量子點高度,量子點幾何結構與其材料濃度對於量子點光電性質影響甚鉅。數值結果顯示,銻濃度高於16%,量子點由第一型結構轉變至第二型結構,而能量紅移現象也將隨著銻濃度之增加而變大。 本文亦發現,使用砷化鋁鎵材料包覆量子點結構,將可增加結構之量子侷限效應。隨著量子點尺寸增加,侷限在量子點電子能態之數量有增加趨勢,並以量子點高度變化對量子點結構光電性質影響最為敏感。當量子點高度過高時,電子及電洞波函數重疊率將減少,而量子點銦濃度高者維持高光學增益之量子點高度容許範圍較小。 | zh_TW |
dc.description.abstract | The optical properties of InGaAs quantum dots are investigated. A model based on linear elasticity and k•p theory is developed to analyze the effect of shapes and composition concentrations of quantum dot, as well as GaAsSb strain reducing layers on optical properties of the InGaAs quantum dots by means of finite-element method.
The numerical results show that GaAsSb layers can release the strain field inside and in the neighborhood of InGaAs quantum dots. When the thickness of GaAsSb layer is greater than the height of quantum dot, the strain relaxation is higher. Moreover, by using GaAsSb as buffer and capping layer simultaneously, strain will be released most. Both GaAsSb layer thickness and the order of epitaxy will influence the optical properties, and the effect are more obvious when the thickness of GaAsSb strain reducing layer is less than the quantum-dot height. For Sb content > 0.16, the transition way of the quantum dot transfers from type I to type II, and the red-shift of transition energy increases as Sb content increases. The calculated results also indicate that the AlGaAs layer can increase quantum confinement. The number of electron-energy-state confined in the quantum dot increases as the quantum dot size increases, and optical properties are more sensitive to the quantum-dot height. Excessively high quantum dot causes the wave-function overlaps to decrease. For high indium concentration quantum dots, the range of quantum-dot size with high optical gain is narrow. | en |
dc.description.provenance | Made available in DSpace on 2021-06-16T23:21:59Z (GMT). No. of bitstreams: 1 ntu-101-R99543038-1.pdf: 4870137 bytes, checksum: 01b8a9fc119e8028e338ef65a4b99b7f (MD5) Previous issue date: 2012 | en |
dc.description.tableofcontents | 口試委員會審定書 #
誌謝 i 中文摘要 ii ABSTRACT iii 目錄 iv 圖目錄 vi 表目錄 xi 第一章 緒論 1 1-1 前言 1 1-2 研究動機 2 1-3 文獻回顧 4 1-4 研究內容 9 第二章 數學模型 11 2-1 應變理論 11 2-1-1 初始應變 12 2-1-2 材料組成律 14 2-1-3 平衡方程式、邊界條件與連續條件 17 2-2 量子點之光電性質理論分析 18 2-2-1 k•p理論 18 2-2-2 含自旋軌道交互作用之漢彌爾頓 21 2-2-3 單載子等效質量理論與6*6漢彌爾頓 22 2-2-4 波函數重疊量與吸收係數 29 2-2-5 光激發螢光量測原理 30 第三章 數學模型驗證與假設探討 32 3-1 數學模型驗證 32 3-2 量子點幾何形狀假設探討 35 3-3 量子點濃度分佈假設探討 39 第四章 模擬結果與分析 43 4-1 具銻砷化鎵應力緩衝層之量子點結構 43 4-1-1 體應變分佈 45 4-1-2 能帶結構 47 4-1-3 躍遷能量 50 4-1-4 電子電洞之機率密度分佈與波函數重疊率 51 4-2 中間帶太陽能電池結構 58 4-2-1 能帶結構 61 4-2-2 特徵能量 63 4-2-3 電子電洞之機率密度、波函數重疊率與吸收係數 67 第五章 結論 74 參考文獻 76 | |
dc.language.iso | zh-TW | |
dc.title | 銻砷化鎵應力緩衝層對砷化銦鎵量子點結構光學特性之研究 | zh_TW |
dc.title | Optical Properties of InGaAs Quantum Dots with GaAsSb Strain Reducing Layers | en |
dc.type | Thesis | |
dc.date.schoolyear | 100-2 | |
dc.description.degree | 碩士 | |
dc.contributor.coadvisor | 林資榕(Tzy-Rong Li) | |
dc.contributor.oralexamcommittee | 馮瑞陽(Jui-Yang Feng) | |
dc.subject.keyword | 量子點,應力緩衝層,有限元素法, | zh_TW |
dc.subject.keyword | quantum dot,GaAsSb,strain reducing layer,finite element method, | en |
dc.relation.page | 80 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2012-08-01 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 應用力學研究所 | zh_TW |
顯示於系所單位: | 應用力學研究所 |
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