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DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 陳建彰 | |
dc.contributor.author | Han-Tsun Chung | en |
dc.contributor.author | 鍾涵存 | zh_TW |
dc.date.accessioned | 2021-06-16T23:20:40Z | - |
dc.date.available | 2015-08-09 | |
dc.date.copyright | 2012-08-09 | |
dc.date.issued | 2012 | |
dc.date.submitted | 2012-08-01 | |
dc.identifier.citation | 第一章參考文獻
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/65069 | - |
dc.description.abstract | 本論文利用射頻磁控濺鍍(Radio frequency magnetron sputtering)法在室溫下成長HfxMg0.05Zn0.95-xO (x = 0、0.025、0.05、0.075、0.1)薄膜於康寧玻璃基板及矽晶圓基板上,再經由爐管空氣下200、300、400、500、600 oC的後熱退火處理及不同能量40、60、80、100、120 mJ/cm2雷射表面處理後,對材料性質進行研究與探討。
從電子微探儀分析比較HfxMg0.05Zn0.95-xO薄膜與原靶材成分發現,相較於靶材,薄膜中鉿原子比例較靶材高出約一倍,經過爐管空氣下後熱退火處理,薄膜中各原子比例則沒有明顯改變。透過X光繞射光譜觀察到2θ= 34o 左右時有(002)氧化鋅繞射峰訊號,隨鉿原子比例摻雜增加其繞射峰半高寬增加且往小角度偏移,顯示鉿摻雜取代具非晶化效果。穿透光譜可知道在可見光波長下薄膜平均穿透率超過80%,且吸收邊界介於紫外光波長間,且吸收邊界隨鉿原子摻雜比例增加往短波長偏移。由Tauc bandgap fitting將薄膜光學能隙計算得知,薄膜光學能隙隨鉿原子摻雜比例增加10 at%,會由3.35 eV增加至3.95 eV。而熱退火也會影響光學能隙。薄膜電阻率由電流-電壓量測計算可知,在鉿原子摻雜至2.5 at% 其電阻率約為2x107 ohm cm,經爐管後熱退火處理有顯著的改善。 雷射表面處理在濺鍍氣氛為純氬氣之HfxMg0.05Zn0.95-xO薄膜,在發數為1發下,能量提升至80 mJ/cm2,表面出現裂痕且薄膜顏色發生變化,而能量超過100 mJ/cm2,薄膜有剝落現象。發數為1000發下,能量提升至60 mJ/cm2,則薄膜即出現剝落現象。 | zh_TW |
dc.description.abstract | The films were deposited onto glass substrates (Eagle 2000, Corning Inc.) and/or silicon(100) wafer substrates by rf sputtering from HfxMg0.05Zn0.95-xO (x = 0、0.025、0.05、0.075、0.1) targets at room temperature. We analyze the film properties before and after annealing at 200、300、400、500、600 oC. Other set of samples were treated by KrF excimer laser with various laser power density of 40、60、80、100、120 mJ/cm2.The material properties of thin films were characterized by EPMA、XRD、transmission spectra、SEM and current-voltage measurement, etc.
From the results of EPMA, Hf concentrations of sputtered films were twice those of original targets. The sputtered Mg0.05Zn0.95O thin films exhibited strong (002) preferred orientation with XRD peak located at 2θ= 34o. With the increase of Hf doping concentration, the XRD peak shifted slightly to lower angle due to the replacement of Mg or Zn atoms with Hf atoms in the crystals. The full-width-at-half-maximum (FWHM) of XRD peak were also greatly increased, indicating that the material amorphorization proceeds with the addition of Hf. All HfxMg0.05Zn0.95-xO thin films were highly transparent (> 80 %) in the visible region and had sharp absorption edges in the UV region. The absorption edge shifts to the shorter wavelength as the Hf content increases, inferring the increase of tauc bandgap. Optical bandgap calculated by Tauc plot increased from 3.35eV to 3.95eV as the concentration of Hf increased from 0 to 10 at.%. Thermal annealing also influenced the optical bandgaps of sputtered HfMgZnO thin films. Electrical resistivity of Hf0.025Mg0.05Zn0.925O thin films were 2×107 ohm-cm and remarkably improved after post thermal annealing. For HfxMg0.05Zn0.95-xO thin films treated by KrF excimer laser. With one irradiation pulse, the surface of the films were cracked and colored as the irradiation laser power density was below 80 mJ/cm2 . Beyond this power density, the films started to peel off. With 1000 pulses of laser irradiation, the films immediately peeled over 60 mJ/cm2. | en |
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dc.description.tableofcontents | 目錄
口試委員會審定書..................................................Ι 誌謝..............................................................II中文摘要..........................................................III 英文摘要..........................................................IV目錄...............................................................VI圖目錄............................................................X 表目錄..........................................................XVII 第一章 緒論......................................................1 1.1寬能隙半導體.................................................1 1.2研究目的.....................................................1 1.3章節介紹.....................................................2 參考文獻........................................................2 第二章 基本原理與文獻回顧........................................3 2.1金屬氧化物半導體.............................................3 2.1.1 氧化鋅(ZnO)之基本特性....................................3 2.1.2 氧化鋅鎂(MgZnO).........................................7 2.1.3氧化鋅鉿(HfZnO)..........................................10 2.2非晶氧化物半導體 (Amorphous Oxide Semiconductors,AOSs).......12 2.2.1非晶氧化物簡介...........................................12 2.2.2非晶氧化物之傳導機制.....................................13 2.2.3 非晶氧化鋅銦鎵(a-IGZO)...................................15 2.2.4 非晶氧化鋅銦鉿(a-HIZO)...................................15 2.3 低溫準分子雷射表面加工....................................17 2.3.1氣體雷射介紹.............................................17 2.3.2準分子雷射表面加工.......................................18 第二章參考文獻..................................................21 第三章 實驗方法與流程............................................27 3.1 氧化鋅鎂鉿陶瓷靶材製備......................................27 3.2 基板清洗....................................................28 3.2.1康寧Eagle 2000玻璃基板清洗................................28 3.2.2 n型單晶矽晶圓清理方式....................................28 3.3 射頻磁控濺鍍流程(RF magnetron sputtering).......................28 3.4電子束蒸鍍流程(electric beam evaporation).........................30 3.5 管爐熱退火處理..............................................31 3.6 雷射處理....................................................32 3.7 量測儀器及原理..............................................33 3.7.1 表面輪廓儀 (Surface profile)................................33 3.6.2光譜儀...................................................33 3.7.3 X射線繞射儀 (X-Ray Diffraction,XRD).......................34 3.7.4 掃描式電子顯微鏡 (Scanning electron microscope,SEM)..........35 3.7.5 電子微探儀 (Electron Probe Micro Analyzer,EPMA).............35 3.7.6 電性量測架構.............................................36 第三章參考文獻..................................................37 第四章 實驗結果與討論............................................38 4.1 濺鍍氣氛Ar : O2 = 0 : 20之HfxMg0.05Zn0.95-xO薄膜特性..............38 4.1.1 X光繞射分析.............................................38 4.1.2 光學性質量測.............................................41 4.2 濺鍍氣氛Ar : O2 = 15 : 5之HfxMg0.05Zn0.95-xO薄膜特性..............47 4.2.1 X光繞射分析儀...........................................47 4.2.2 光學性質量測.............................................50 4.3 濺鍍氣氛Ar : O2 = 12 : 2之HfxMg0.05Zn0.95-xO薄膜特性..............56 4.3.1 X光繞射分析儀...........................................56 4.3.2光學性質量測.............................................59 4.4 濺鍍氣氛Ar : O2 = 18 : 2之HfxMg0.05Zn0.95-xO薄膜特性.............. 65 4.4.1 X光繞射分析儀...........................................65 4.4.2 光學性質量測.............................................68 4.5 濺鍍氣氛Ar : O2 = 14 : 0之HfxMg0.05Zn0.95-xO薄膜特性..............74 4.5.1 薄膜成分分析.............................................74 4.5.2 X光繞射分析儀...........................................76 4.5.3 光學性質量測.............................................79 4.5.4 SEM圖...................................................84 4.5.5 電阻率量測...............................................87 4.6 探討濺鍍氣氛對HfxMg0.05Zn0.95-xO薄膜特性影響...................89 4.6.1 X光繞射分析..............................................89 4.6.2 光學性質量測.............................................91 4.7 濺鍍氣氛Ar : O2 = 14 : 0之HfxMg0.05Zn0.95-xO薄膜特性..............93 4.7.1 X光繞射分析儀............................................93 4.7.2 光學性質量測.............................................95 4.8 濺鍍氣氛Ar : O2 = 14 : 0之HfxMg0.05Zn0.95-xO薄膜雷射表面處理.....100 4.8.1 SEM圖..................................................100 4.8.2 X光繞射分析.............................................107 4.8.3 光學性質量測............................................110 第四章參考文獻.................................................113 第五章 結論與未來工作............................................114 5.1結論.........................................................114 5.2 未來工作....................................................115 | |
dc.language.iso | zh-TW | |
dc.title | 氧化鋅鎂鉿熱退火及雷射表面處理之薄膜特性 | zh_TW |
dc.title | Characterization of HfMgZnO thin films with thermal annealing or excimer laser treatment | en |
dc.type | Thesis | |
dc.date.schoolyear | 100-2 | |
dc.description.degree | 碩士 | |
dc.contributor.coadvisor | 陳奕君 | |
dc.contributor.oralexamcommittee | 徐振哲,張世航 | |
dc.subject.keyword | 氧化鋅鎂鉿,熱退火,雷射表面處理, | zh_TW |
dc.subject.keyword | HfMgZnO,thermal annealing,laser treatment, | en |
dc.relation.page | 115 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2012-08-01 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 應用力學研究所 | zh_TW |
顯示於系所單位: | 應用力學研究所 |
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