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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 林浩雄 | |
dc.contributor.author | Han-Sheng Tsai | en |
dc.contributor.author | 蔡漢聲 | zh_TW |
dc.date.accessioned | 2021-06-16T23:04:22Z | - |
dc.date.available | 2012-08-10 | |
dc.date.copyright | 2012-08-10 | |
dc.date.issued | 2012 | |
dc.date.submitted | 2012-08-06 | |
dc.identifier.citation | [1] E.H.C. Parker, “The Technology and Physics of Molecular Beam Epitaxy, ” Plenum Press, 1985.
[2] V. Swaminathan and A. T. Macrander, “Material aspect of GaAs and InP based structures, ” Prentice Hall, 1991. [3] E.F. Schubert, “Dopoing in III-V Seconductors, ”AT&T Bell Lab, 1993. [4] C.Kittle, “Introduction to Solid State Physics, ”John Wiley&Sons, Inc, 1976. [5] Claude Weisbuch, Borge Vinter, “Quantum Semiconductor Structures, Fundamentals and Applications, ”Academic Press, Inc, 1991. [6] Yu-Chung Chin, Hao-Hsiung Lin, Chao-Hsing Huang, “ InGaP/GaAsPSb/GaAs Double HBT With Weakly Type-II Base/Collector Junction, ” IEEE. Electron Device Letters, vol. 33, pp. 489-491, 2012. [7] Delong Cui, Seth M Hubbard, Dimitris Pavlidis, Andreas Eisenbach and Cycil Chelli, “Impact of doping and MOCVD conditions on minority carrier lifetime of zin-and carbon-doped InP/InGaAs heterostructure bipolar transistors, ” Semicond. Sci. Technol, vol. 17,pp. 503-509, 2002. [8] Ming Qi, Makoto Konagai, and Kiyoshi Takahashi, “Raman scattering from longitudinal-optical phonon-plasmon-coupled mode in carbon- doped p-type InGaAs, ”J. Appl. Phys., vol. 78, pp. 7265-7268, 1995. [9] M. Yano, M. Ashida, A. Kawaguchi, Y. Iwai, and M. Inoue, “Molecular- Beam epitaxial growth and interface characteristics of GaAsSb on GaAs substrates, ”J. Vac. Sci. Technol. B7(2), 1989. [10] Y. T. Cheng, M. J. Jou, H. R. Jen, and G. B. String, “Raman scattering in GaP1-xSbx, ”J. Appl. Phys., vol. 63, 1988. [11] Y. T. Cheng, D. H. Jaw , M. J. Jou, and G. B. String, “Lattice vibration Spectra of GaP1-xSbx and InP1-xSbx, ” J. Appl. Phys., vol. 65, 1989. [12] Diego Olego, Manual Cardona, “Photoluminescence in heavily doped GaAs. I. Temperature and hole-concentration dependent, ” Physical Review B, vol. 22, 1980. [13] Seong-II Kim, Moo-Sung Kim, Suk-Ki Min, and Choochon Lee, “ Experimental and theoretical photoluminescence study of heavily carbon doped GaAs grown by low-pressure metalorganic chemical vapor deposition. ” J. Appl. Phys., vol. 74, 1993. [14] S. C. Jain, D. J. Roulston, “A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and GexSi1-x strain layers, ”Solid-State Electronics, vol. 34, 1991. [15] I. Vurgaftman, J. R. Meyer, “Band parameter for III-V compound Semiconductors and their alloys, ”Appl. Phys. Lett., vol. 89, 2001. [16] Jose Luis Martins, Alex Zunger, “Bond lengths around isovalent impurities and in semiconductor solid solutions, ” Physical Review B, vol. 30, 1984. [17] M. C. Hanna, Z. H. Lu, and A. Majerfeld, “Very high carbon Incorporation in metalorganic vapor phase epitaxy of heavily doped p-type GaAs, ” Appl. Phys. Lett., vol. 58, 1991. [18] Jia-Min Shieh, Yi-Fan Lai, Yong-Chang Lin, and Jr-Yau Fang, “ Photoluminescence : Principles, Structure, and Applications, ” Nano-communication, vol 12-2. [19] Michael Wahl, PicoQuant GmbH, “Time-correlated Single Phonon Counting, ” Technical Note v2.1, 2009. [20] M. Seon, M. Holtz, W. M. Duncan, and T. S. Kim, “Raman studies of heavily carbon doped GaAs, ” J. Appl. Phys., vol. 85, 1999. [21] V. N. Denisov, B. N. Marvin, V. B. Podobedov, “Effect of photoexcitedCarriers on raman spectra of a hydrogenated GaAs crystal implantedwith silicon, ”Plenum Publishing Corporation, pp. 772-776, 1991. [22] X. B. Zhang, H. L. Tsoi, K. L. Ha, and S. K. Hark, “Raman scattering studies of the ZnSe/GaAs interface, ”J. Raman Spectroscopy, vol. 32, pp. 852-856, 2001. [23] A. Krost, W. Richter, and D. R. T. Zahn, “Photoexcited Plasmon-LO-Phonon modes at the ZnSe/GaAs interface, ”Appl. Surface Scoence, pp. 691-696, 1992. [24] J. Wagnar, M. Maier, Th. Lauterbach, and K. H. Bachem, “Raman Spectroscopy of localized vibrational modes from carbon and carbon-hydrogen pairs in heavily carbon-doped GaAs epitaxial layers,” Phys. Rev. B, pp. 9120-9125, 1992. [25] Sandip Tiwari, Steven L. Wright, “Material properties of p-type GaAs At large doping, ” Appl. Phys. Lett., vol. 56, 1990. [26] E. S. Harmon, M. R. Melloch, and M. S. Lundstrom, “Effective band-Gap shrinkage in GaAs, ” Appl. Phys. Lett., vol. 64, 1994. [27] X. K. Chen, R. Wiersma, C. X. Wang, O. X. Wang, O. J. Pitts, C.Dale, C. R. Bolognesi, and S. P. Watkins, “Local vibration modes of carbon of carbon in GaSb and GaAsSb, ” Appl. Phys. Lett., vol. 80, 2002. [28] Takeshi Akatsuka, Ryuji Miyake, Shinji Nozaki, “Heavily Carbon-Doped P-type InGaAs grown by Metalorganic Molecular beam epitaxy, ” J. J. Appl. Phys., vol. 29, pp. 537-539, 1990. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/64866 | - |
dc.description.abstract | 本論文以二次離子質譜儀分析法得到樣品的成分組成;使用高解析度X光繞射儀進行倒置晶格圖譜,得到晶格結構參數;使用X光精細結構吸收光譜分析晶體內部資訊,並與價力場模型的理論記算結果比對分析;為了正確取得X光精細結構吸收光譜的實驗數據,建立了一套資料選取方法;利用變溫光激發螢光頻譜、低溫變光激發強度頻譜以及拉曼散射頻譜研究銻磷砷化鎵材料的光學特性,並使用時間解析光激發螢光頻譜得到實驗樣品的次要載子生命週期。
從X光晶細結構吸收光譜實驗資料中可發現,由於實驗樣品成分較低、厚度較薄等因素,使得在萃取實驗數據上的準確性降低。因此我們嘗試各種不同的資料選取方式,結果顯示我們必須在擬合過程中一次只改變單一變因,並先將最後所要擬合的資料曲線選取到各波峰皆明顯區別出來,再進行遞迴式資料選取以獲得最佳結果,在此我們建立一套可信且合理的X光晶細結構吸收光譜資料處理方法。 光激發螢光頻譜的實驗之中,我們量測砷化鎵基極 HBT變溫光激發螢光頻譜,並參考文獻利用線性外差低能量斜邊方式,得到在各溫度下實際放光能量值。使用Varshni equation擬合資料點,得到常溫300K時的放光能量,計算能隙縮減(BGN)量以證明此方式的合理性,最後將此方法套用到以銻磷砷化鎵基極HBT的變溫光激發螢光頻譜分析上,得到在常溫300K的放光能量為1.247eV。 時間解析光激發螢光頻譜實驗,利用變溫光激發螢光頻譜實驗得到的常溫放光能量值,量測HBT結構基極層在特定放光波長下的次要載子生命週期,四元材料銻磷砷化鎵基極次要載子生命週期為16.6ps。 拉曼散射光譜實驗,比較無摻雜、重摻雜的單層塊材結構與層狀結構,在激發光強度改變之下的線形變化。單層結構隨著激發光強度變強各峰值強度等速度增加,層狀結構由於存在接面內建電場,我們認為激發光強度增強時光激發載子也隨之增加,但由於內建電場游離光激發載子,導致部分內建電場被游離的電子或電洞屏蔽,促使LO模態強度相對較弱,此外我們以合金位能擾動以及非簡諧性震盪解釋半寬不對稱與峰值偏移。 | zh_TW |
dc.description.abstract | In this thesis, we use secondary ion mass spectroscopy to acquire mole fractions of our samples; Using high resolution X-ray diffraction to do the reciprocal space mapping, and obtain the information about lattice structure; Using Extended X-ray absorption fine structure experiment to investigate the information about bond length. Besides, we calculate valence force field model to the result of Extended X-ray absorption fine structure experiment; In order to acquire a reasonable set of data from EXAFS experiment, we construct a data selection process; Using low temperature power dependent PL, temperature dependent PL, and Raman scattering experiment to acquire optical properties of material; And using Time resolved PL to acquire the minority carrier lifetime of HBT base structure.
In EXAFS experiment, we found that if our samples are thin or have low mole fraction of the element we want to detect, it would be difficult to obtain a reasonable set of data. So we test different regions of data selections, conclude that we can only change one parameter at a time, and do data selections repeated in both R-space and K-space. In the end, judge the quality of data by R-factor. In Photoluminescence experiment, we measure the temperature dependent PL of GaAs base HBT structure, by doing linear extrapolation of low energy shoulder of spectrum, we can obtain emission energy for each temperature we measured, then using Varshni equation to fit data point in order to get room temperature emission energy, compared it with BGN model to modify this process is adoptable. In the end, using this process to obtain the room temperature emission energy GaAsPSb base HBT structure, which is 1.247eV. In TRPL experiment, using the room temperature emission energy obtained from PL to measure minority carrier lifetime of pre-selected wavelength, the minority carrier lifetime of GaAsPSb base is 16.6ps. In Raman scattering experiment, we discuss the differences between one layer structure and multilayer structure of the influence from excitation power. The result shows there might exist electric field in multilayer structure, causing photo excited electron-hole pair dissociation, and screening a partial of electric field, leading to the different growth rate of each peak. Besides, we use alloy potential and anharmonicity effect to describe asymmetry and peak shift. | en |
dc.description.provenance | Made available in DSpace on 2021-06-16T23:04:22Z (GMT). No. of bitstreams: 1 ntu-101-R99943076-1.pdf: 3662051 bytes, checksum: 7177e7f69e0fffa3dc34713a9266172d (MD5) Previous issue date: 2012 | en |
dc.description.tableofcontents | 中文摘要...........................................i
Abstract.........................................iii 目錄...............................................v 附表索引...........................................vii 附圖索引............................................ix 第一章 序論..........................................1 第二章 實驗架構與量測方法...............................3 2.1 二次離子質譜儀(SIMS) .............................3 2.2 倒置晶格圖譜(RSM) ................................3 2.3 X-Ray晶細結構吸收光譜(EXAFS) ......................4 2.4 光激發螢光(PL)量測................................6 2.5 拉曼散射光譜(Raman) ..............................7 第三章 成份與結構.....................................15 3.1二次離子質譜儀(SIMS) ..............................15 3.2倒置晶格圖譜(RSM) ................................15 3.3 X-Ray晶細結構吸收光譜(EXAFS) .....................17 -數據處理...................................17 -磷的K邊緣EXAFS光譜之擬合.....................19 3.4 價力場模型(VFF model) ...........................20 第四章 EXAFS資料選取..................................39 4.1 擬合相關參數判定..................................39 4.2 第一次K-range選取,獲取第一次R-range 範圍...........40 4.3 固定R-range範圍,做第二次K-range選取...............41 4.4 固定上述五組K-range範圍,分別做第二次R-range選取…..….47 4.5 結果與討論......................................49 第五章 光激發螢光與時間解析光激發螢光頻譜.................51 5.1 光激發螢光(PL)頻譜...............................51 5.2 時間解析光激發螢光(TRPL)頻譜......................54 第六章 拉曼散射光譜..................................67 6.1 拉曼散射原理....................................67 6.2砷化鎵塊材以及高摻雜濃度砷化鎵拉曼頻譜................69 6.3變光激發強度拉曼散射頻譜............................71 第七章 結論.........................................89 參考文獻............................................91 | |
dc.language.iso | zh-TW | |
dc.title | 銻磷砷化鎵材料特性研究 | zh_TW |
dc.title | Material Properties of GaAsPSb | en |
dc.type | Thesis | |
dc.date.schoolyear | 100-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 黃朝興,蔡世貞,林光儀 | |
dc.subject.keyword | 光激發螢光,時間解析光激發螢光,拉曼散射, | zh_TW |
dc.subject.keyword | Photoluminescence,Time-Resolved Photoluminescence,Raman Scattering., | en |
dc.relation.page | 93 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2012-08-07 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
顯示於系所單位: | 電子工程學研究所 |
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