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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 林浩雄 | |
dc.contributor.author | Jiansheng Wu | en |
dc.contributor.author | 吳健生 | zh_TW |
dc.date.accessioned | 2021-06-16T17:13:36Z | - |
dc.date.available | 2013-08-27 | |
dc.date.copyright | 2012-08-27 | |
dc.date.issued | 2012 | |
dc.date.submitted | 2012-08-20 | |
dc.identifier.citation | [1] Junqiao Wu “When group-Ⅲnitrides go infrared: New properties and perspectives” J. Appl. Phys., vol.106 ,011101, 2009
[2] Kondow M, Uomi K, Hosomi K and Mozume “Gas-Source Molecular Beam Epitaxy of GaNxAs1-x Using a N Radical as the N Source” Japan. J. Appl. Phys., vol. 33 ,pp1056, 1994 [3] J S Harris Jr, “GaInNAs long-wavelength lasers:progress and challenges” Semicond. Sci. Technol. , vol. 17, pp880-891, 2002 [4] Henning Riechert, Arun Ramakrishnan and Gunther Steinle, “Development of InGaAsN-based 1.3 μm VCSELs ”, Semicond. Sci. Technol., Vol.17, pp892, 2002 [5] D.J. Friedman, J.F. Geisz, S.R. Kurtz, J.M. Olson,”1-eV solar cells with GaInNAs active layer”, J. Crystal. Growth, vol.195,pp409-415, 1998 [6] J FGeisz , D J Friedman,” III–N–V semiconductors for solar photovoltaic applications”, Semicond. Sci. Technol.,vol.17, pp769-777,2002 [7] S. Wicaksono, S. F. Yoon, K. H. Tan, and W. K. Cheah, “Concomitant incorporation of antimony and nitrogen in GaAsSbN lattice-matched to GaAs”, J. Cryst. Growth, vol.274,pp355-361,2005 [8] L. Grenouillet, C. Bru-Chevallier, G. Guillot, P. Gilet, P. Ballet, P. Duvaut, G. Rolland, and A. Million, “Rapid thermal annealing in GaNxAs1−x/GaAs structures: Effect of nitrogen reorganization on optical properties ” J. Appl. Phys. ,vol 91, pp5902, 2002 [9] L. F. Bian, D. S. Jiang, P. H. Tan, S. L. Lu, B. Q. Sun, L. H. Li, and J. C. Harmand, “Photoluminescence characteristics of GaAsSbN/GaAs epilayers lattice-matched to GaAs substrates”, Solid State Commun., vol.132, pp 707,2004 [10] S. Kurtz, J. Webb, L. Gedvilas, D. Friedman, J. Geisz, J. Olson, R. King, D. Joslin, and N. Karam,,” Structural changes during annealing of GaInAsN” , Appl. Phys. Lett. ,vol.78, pp748, 2001 [11] G. Ciatto, J. C. Harmand, F. Glas, L. Largeau, M. Le Du, F. Boscherini, M. Malvestuto, L. Floreano, P. Glatze, and R. Alonso Mori, “Anions relative location in the group-V sublattice of GaAsSbN/GaAs epilayers: XAFS measurements and simulations”, Phys. Rev. B, vol.75, 245212, 2007 [12] A. Jenichen and C. Engler, “Stability and band gaps of As-rich and N-rich GaAsN alloys:Density-functional supercell calculations,” Phys. Stat. Sol. (b) vol.241, 1883 (2004). [13] J. A. Gupta, M. W. C. Dharma-wardana, A. Jurgensen, E. D. Crozier, J. J. Rehr, M. Prange, “Local environment of nitrogen in GaNyAs1-y epilayers on GaAs(0 0 1) studied using X-ray absorption near edge spectroscopy,” Solid State Comm. Vol.136, 351 (2005) [14] Y.T. Lin, T.C. Ma, T.Y. Chen, and H. H. Lin, “Origin of the annealing-induced blue-shift in GaAsSbN bulk layers,” Optics and Photonics Taiwan, AP-074 (2007). [15] K. K. Tiong, P. M. Amirtharaj, F. H. Pollak, and D. E. Aspnes, “Effects of As+ ion implantation on the Raman spectra of GaAs: ‘‘Spatial correlation’’ interpretation”, Appl. Phys. Lett. , vol. 44, pp 122 ,1984 [16]M. Yano, M. Ashida, A.Kawaguchi, Y.Iwai, M. Inoue, “Molecular-beam epitaxial growth and interface characteristics of GaAsSb on GaAs substrates”. J.Vac. Sci. Technol., vol.7, pp199-203, 1989 [17] R.C Newman, “ Anharmonic vibrations of hydrogen paired with shallow impurities in semiconductors”, Semicond Sci Technol., Vol.5 ,pp 911,1990 [18] P.M Morse, “Diatomic Molecules According to the Wave Mechanics. II. Vibrational Levels”, Phys. Rev Lett. ,Vol.34, pp57-64, 1929 [19] M. Balkanski, R.F. Wallis, E. Haro,” Anharmonic effects in light scattering due to optical phonons in silicon ” Phys. Rev. B, vol. 28, pp1928-1934, 1983 [20]G.P. Srivastava, “The anharmonic phonon decy rate in group- III nitrides”, J. Phys.: Condens. Matter ,vol. 21, 2009 [21]P. Verma, S.C Abbi, K,P Jain, “Raman-scattering probe of anharmonic effects in GaAs”, Phys. Rev. B, vol.51, no. 23, 1995 [22] B. Di Bartolo,”Optical Interactions in Solids” Wiley, New York, 1968. [23]R.M. Cohen, M.J Cherng, R.E. Benner, and G.B Stringfellow, ”Raman and photoluminescence spectra of GaAs1-xSbx”, J. Appl. Phys., vol. 57,1985 [24]T.C. McGlinn, T.N. Krabach, M.V. Klein, “Raman scattering and optical-absorption studies of the metastable alloy system GaAsxSb1-x”, Phys. Rev. B vol.33, no. 12, 1986 | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/63527 | - |
dc.description.abstract | 本篇論文係研究以氣態源分子束磊晶法成長的稀氮化物材料氮銻砷化鎵之光學特性。主要使用之儀器有拉曼光譜以及X光倒置空間譜。實驗中我們將成長好的氮銻砷化鎵分成經過650℃ 、800℃、850℃快速熱退火以及不做熱退火四種條件。實驗結果顯示經650℃和800℃熱處理的試片在拉曼頻譜上250 cm-1附近具有一個振動模態。我們也將此四種試片做了變溫拉曼的量測,其結果發現800℃的試片在溫度降低時具有最大的頻率紅移量,其後我們將此試片蝕刻300奈米深並重新測量變溫拉曼譜,紅移的量在蝕刻後明顯的減少。我們認為此一現象是源自於一個光學聲子會衰減成多個聲學聲子的非簡諧性效應。因為材料中的雜質或缺陷會形成散射中心,使得頻率產生大幅紅移,故在蝕刻之後頻率紅移量的下降顯示了雜質或缺陷的減少。
從X光倒置空間譜我們可以得到試片的水平與垂直晶格常數位在5.61 A 附近而且晶格已近乎完全鬆弛。 我們原先認為650℃和800℃熱處理的試片在拉曼光譜中發現的位於250 cm-1附近的振動模態是因有另一個銻化鎵較多的相所致,但經過X光粉末繞射儀檢驗之後並沒有發現此相的存在。我們認為此模態產生可能的原因是在經過650℃和800℃熱退火後原子結構發生了改變從而使Ga和As原子的鍵長改變。 | zh_TW |
dc.description.provenance | Made available in DSpace on 2021-06-16T17:13:36Z (GMT). No. of bitstreams: 1 ntu-101-R99941050-1.pdf: 3521067 bytes, checksum: 98cd0dd1a813a7f20ace405552b4fb73 (MD5) Previous issue date: 2012 | en |
dc.description.tableofcontents | Contents
中文摘要 I Abstract II Contents IV Figure Captions VI Table Captions IX Chapter 1 Introduction 1 1.1 Background and Motivation 1 1.2 Thesis framework 2 Chapter 2 Experimental Apparatus 4 2.1 Gas Source Molecular Beam Epitaxy 4 2.2 Rapid Thermal Annealing 4 2.3 Electron probe X-Ray microanalyzer (EPMA) 5 2.4 Raman Spectroscopy 5 2.4.1 Principles and the selection rule………………………………………..….5 2.4.2 Selection rule and the effect of quarter wave plate 7 2.5 Reciprocal space mapping (RSM)..…………………………………………….8 Chapter 3 Raman Spectroscopy of GaAs0.946Sb0.032N0.022 13 3.1 The Raman spectrum at room temperature 13 3.2 Temperature dependence of Raman spectrum 14 3.3 Anharmonicity………………………………………………………………18 3.4 Etching of sample surface…………………………………………………...26 Chapter 4 RSM analysis 48 Chapter5 Conclusions 58 References 60 Figure Captions Figure 2.1 Elastic Rayleigh scattering and inelastic Raman scattering. 10 Figure 2.2 HORIBA Jobin-Yvon T64000Micro-Raman system 10 Figure 2.3 Raman spectroscopy of Si with and without polarizer 11 Figure 2.4 Zoom in figure of Raman spectroscopy of Si with and without polarizer , showing the declining intensity of the two phonon mode. 11 Figure 2.5 Raman spectroscopy of GaAs with and without polarizer, showing the declining intensity of two phonon mode…………………………………...12 Figure 3.1 Raman spectrum of high quality GaAs bulk 28 Figure 3.2 Raman spectroscopy of C3261 samples under different rapid thermal annealing treatment. 29 Figure 3.3 Raman spectroscopy of C3261 samples under different rapid thermal annealing treatment. The spectra is zoomed in in order to clearly observe the weak Ga-N LVM and the two phonon mode of GaAs. 30 Figure 3.4 The temperature dependent Raman spectroscopy of the as grown C3261 sample. The amount of peak shifts of GaAs-like LO and TO mode are labeled. 31 Figure 3.5 The temperature dependent Raman spectroscopy of the C3261 RTA 650℃sample before etching. The amount of peak shifts of GaAs-like LO and TO mode are labeled. 32 Figure 3.6 The temperature dependent Raman spectroscopy of the C3261 RTA 650℃sample after etching. The amount of peak shifts of GaAs-like LO and TO mode are labeled. 33 Figure 3.7 The temperature dependent Raman spectroscopy of the C3261 RTA 800℃sample before etching. The amount of peak shifts of GaAs-like LO and TO mode are labeled……………………………………………………………34 Figure 3.8 The temperature dependent Raman spectroscopy of the C3261 RTA 800℃sample after etching. The amount of peak shifts of GaAs-like LO and TO mode are labeled……………………………………………………………35 Figure 3.9 The temperature dependent Raman spectroscopy of the C3261 RTA 850℃sample. The amount of peak shifts of GaAs-like LO and TO mode are labeled………………………………………………………………………36 Figure 3.10 The temperature dependent relation figure of peak positions of the GaAs-like LO mode. The solid dots are the experimental results and the lines are the best fitting curve with respective to temperature……………37 Figure 3.11 The temperature dependent relation figure of peak positions of the GaAs-like TO mode. The solid dots are the experimental results and the lines are the best fitting curve with respective to temperature………........38 Figure 3.12 The temperature dependent relation figure of peak positions of the GaAs-like LO2 mode. The solid dots are the experimental results and the lines are the best fitting curve with respective to temperature……………39 Figure 3.13 The temperature dependent relation figure of the line width of the GaAs-like LO mode. The solid dots are the experimental results and the lines are the best fitting cve with respective to temperature…..………..40 Figure 3.14 The temperature dependent relation figure of the line width of the GaAs-like LO2 mode. The solid dots are the experimental results and the lines are the best fitting curv with respective to temperature………..…..40 Figure 3.15 The temperature dependent relation figure of the phonon lifetime of the GaAs-like LO mode. The solid dots are the experimental results and the lines are the best fitting curve with respective to temperature……...…….41 Figure 3.16 The temperature dependent relation figure of the phonon lifetime of the GaAs-like LO2 mode. The solid dots are the experimental results and the lines are the best fitting curve with respective to temperature…………..41 Figure 3.17 The Raman spectroscopy of C3261 RTA650℃ sample with different depths of etching………………………………………………………………...42 Figure 3.18 The Raman spectroscopy of C3261 RTA800℃ sample with different depths of etching……………………………………………………...….43 Figure 4.1 Reciprocal space mapping of the incident plane (115) of the sample C3261 AG 51 Figure 4.2 Reciprocal space mapping of the incident plane (004) of the sample C3261 RTA 800℃………………………………………………………………...52 Figure 4.3 Reciprocal space mapping of the incident plane (115) of the sample C3261 RTA 800℃ 53 Figure 4.4 Reciprocal space mapping of the incident plane (004) of the sample C3261 RTA 850℃. 54 Figure. 4.5 Reciprocal space mapping of the incident plane (115) of the sample C3261 RTA 850℃ 55 Figure. 4.6 Reciprocal space mapping of the incident plane (004) of the sample C3261 AG. 56 Table Captions Table 3.1 parameters of the fitting curve showing the shift of the peak position of GaAs LO mode 44 Table 3.2 parameters of the fitting curve showing the shift of the peak position of GaAs TO mode .44 Table 3.3 parameters of the fitting curve showing the shift of the peak position of GaAs LO2 mode .45 Table 3.4 parameters of the fitting curve showing the broadening of the line width of GaAs LO mode……………………………………………………………46 Table 3.5 parameters of the fitting curve showing the broadening of the line width of GaAs LO2 mode………………………………………………..…………46 Table 4.1 The horizontal ,vertical lattice constants and their ratio of the three samples……………………………………………………………………50 | |
dc.language.iso | en | |
dc.title | 以拉曼光譜研究氮銻砷化鎵之材料特性 | zh_TW |
dc.title | Raman scattering study of material properties of GaAsSbN | en |
dc.type | Thesis | |
dc.date.schoolyear | 100-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 黃朝興,蔡世貞,林光儀 | |
dc.subject.keyword | 氮銻砷化鎵,變溫拉曼光譜,非簡諧性效應, | zh_TW |
dc.subject.keyword | GaAsSbN,temperature dependent Raman,anharmonic effect, | en |
dc.relation.page | 63 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2012-08-20 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
顯示於系所單位: | 光電工程學研究所 |
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