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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 林恭如(Gong-Ru Lin) | |
dc.contributor.author | Kaung-Jay Peng | en |
dc.contributor.author | 彭冠傑 | zh_TW |
dc.date.accessioned | 2021-06-16T16:40:02Z | - |
dc.date.available | 2018-07-31 | |
dc.date.copyright | 2013-07-31 | |
dc.date.issued | 2011 | |
dc.date.submitted | 2013-07-27 | |
dc.identifier.citation | [1.1] K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, A. A. Firsov, “Electric field effect in atomically thin carbon films,” Science, 306, 666-669, (2004).
[1.2]C. G.Lee, X. D. Wei, J. W. Kysar, J. Hone, “Measurement of the Elastic Properties and Intrinsic Strength Monolayer Graphene,” Science, 321, 385-388, (2008). [1.3]K. I. Bolotin, K. J. Sikes, Z. Jiang, M. Klima, G. Fudenberg, J. Hone, P. Kim, H. L. Stormer, “Ultrahigh electron mobility in suspended grapheme,” Solid State Commun., 146, 351-355, (2008). [1.4]A. A. Balandin, S. Ghosh, W. H. Bao, I. Calizo, D. Teweldebrhan, F. Miao, C. N. Lau, “Superior Thermal Conductivity of Single-Layer Graphene,” Nano Lett., 8, 902-907, (2008). [1.5]K. S. Kim, Y. Zhao, H. Jang, S. Y. Lee, J. M. Kim, K. S. Kim, J. H. Ahn, P. Kim, J. Y. Choi, B. H. Hong, “Large-scale pattern growth of graphene films for stretchable transparent electrodes,” Nature, 457, 706-710, (2009). [1.6]J. Wu, M. Agrawal, H. A. Becerril, Z. Bao, Z. Liu, Y. Chen, P. Peumans, “Organic Light-Emitting Diodes on Solution-Processed Graphene Transparent Electrodes,” ACS Nano, 4, 43-48, (2010). [1.7]X. Wang, L. Zhi, K. Mullen, “Transparent Conductive Graphene Electrodes for Dye-Sensitized Solar Cells,” Nano Lett., 8, 323-327, (2008). [1.8]S. K. Banerjee, E. Tutuc, D. Basu, S. Kim, D. Reddy, A. H. MacDonald, “Graphene for CMOS and Beyond CMOS Applications,” Proceedings of the IEEE., 98, 2033-2045, (2010). [1.9] Z. Sun, T. Hasan, F. Torrisi, D. Popa, G. Privitera, F. Wang, F. Bonaccorso, D. M. Basko, A. C. Ferrari, “Graphene Mode-Locked Ultrafast Laser,” ACS Nano, 4, 803-810, (2010). [1.10]Y. H. Lin, G.-R. Lin, “Free-standing nano-scale graphite saturable absorber for passively mode-locked erbium doped fiber ring laser,” Laser Phys. Lett., 9, 398-404, (2012). [1.11]G.-R. Lin, Y.-C. Lin, “Directly exfoliated and imprinted graphite nano-particle saturable absorber for passive mode-locking erbium-doped fiber laser,” Laser Phys. Lett., 8, 880-886, (2011). [1.12]Y. Hernandez, V. Nicolosi, M. Lotya, F. M. Blighe, Z. Sun, S. De, I. T. Mcgovern, B. Holland, M. Byrne, Y. K. Gunko, J. J. Boland, N. Peter, G. Duesberg, S. Krishnamurthy, R. Goodhue, J. Hutchison, V. Scardaci, A. C. Ferrari, J. N. Coleman, “High-yield production of graphene by liquid-phase exfoliation of graphite,” Nat. Nanotechnol., 3, 563-568, (2008). [1.13]C.-Y. Su, A.-Y. Lu, Y. Xu, F.-R. Chen, A. N. Khlobystov, L.-J. Li, “High-Quality Thin Graphene Films from Fast Electrochemical Exfoliation,” ACS Nano, 5, 2332-2339, (2011). [1.14]C. Knieke, A. Berger, M. Voigt, R. N. K. Taylor, J. Rohrl, W. Peukert, “Scalable production of graphene sheets by mechanical delamination,” Carbon, 48, 3196-3204, (2010). [1.15]M.V. Antisari, A. Montone, N. Jovic, E. Piscopiello, C. Alvani, L. Pilloni, “Low energy pure shear milling: a method for the preparation of graphite nano-sheets,” Scripta Mater., 55, 1047-1450, (2006). [1.16]H. A. Becerril, J. Mao, Z. Liu, R. M. Stoltenberg, Z. Bao, Y. Chen, “Evaluation of Solution-Processed Reduced Graphene Oxide Films as Transparent Conductors,” ACS Nano, 2, 463-470, (2008). [1.17] I. Vlassiouk, M. Regmi, P. Fulvio, S. Dai, P. Datskos, G. Eres, S. Smirnov, “Role of Hydrogen in Chemical Vapor Deposition Growth of Large Single-Crystal Graphene,” ACS Nano, 5, 6069-6076, (2011). [1.18]Y. Qi, S. H Rhim, G. F. Sun, M. Weinert, L. Li, “Epitaxial Graphene on SiC(0001): More than Just Honeycombs,” Phys. Rev. Lett., 105, 085502, (2010). [1.19] S. J. Chae, F. Gunes, K. K. Kim, E. S. Kim, G. H. Han, S. M. Kim, H. J. Shin, S. M. Yoon, J. Y. Choi, M. H. Park, C. W. Yang, D. Pribat, Y. H. Lee, “Synthesis of Large-Area Graphene Layers on Poly-Nickel Substrate by Chemical Vapor Deposition: Wrinkle Formation,” Adv. Mater., 21, 2328-2333, (2009). [1.20] S. Bhaviripudi, X. Jia, M. S. Dresselhaus, J. Kong, “Role of Kinetic Factors in Chemical Vapor Deposition Synthesis of Uniform Large Area Graphene Using Copper Catalyst,” Nano Lett., 10, 4128-4133, (2010). [1.21]A. Reina, X. Jia, J. Ho, D. Nezich, H. Son, V. Bulovic, M. S. Dresselhaus, and J. Kong, “Large Area, Few-Layer Graphene Films on Arbitrary Substrates by Chemical Vapor Deposition,” Nano Lett., 9, 30-35, (2009). [1.22]S. Thiele, A. Reina, P. Healey, J. Kedzierski, P. Wyatt, P. L. Hsu, C. Keast, J. Schaefer, J. Kong, “Engineering polycrystalline Ni films to improve thickness uniformity of the chemical-vapor deposition-grown graphene films,” Nanotechnol., 21, 015601, (2010). [1.23] A. Reina, S. Thiele, X. Jia, S. Bhaviripudi, M. S. Dresselhaus, J. A. Schaefer, J. Kong, “Growth of Large-Area Single- and Bi-Layer Graphene by Controlled Carbon Precipitation on Polycrystalline Ni Surfaces,” Nano Res., 2, 509-516, (2009). [1.24]W. Liu, T. Dang, Z. Xiao, X. Li, C. C. Zhu, X. L. Wang, “Carbon nanosheets with catalyst-induced wrinkles formed by plasma-enhanced chemical-vapor deposition,” Carbon, 49, 884-889, (2011). [1.25] A. Malesevic, R. Vitchev, K. Schouteden, A. Volodin, L. Zhang, G. V. Tendeloo, A. Vanhulsel, C. V. Haesendonck, “Synthesis of few-layer graphene via microwave plasma-enhanced chemical vapour deposition,” Nanotechnol., 19, 305604, (2008). [1.26] J. L. Qi, W. T. Zheng, X. H. Zheng, X. Wang, H. W. Tian, “Relatively low temperature synthesis of graphene by radio frequency plasma enhanced chemical vapor deposition,” Appl. Surf. Sci., 257, 6531-6534, (2011). [1.27] G.-R. Lin, T.-C. Lo, L.-H. Tsai, Y.-H. Pai, C.-H. Cheng, C.-I. Wu and P.-S. Wang, “Finite silicon atom diffusion induced size limitation on self-assembled silicon quantum dots in silicon-rich silicon carbide” J. Electrochem. Soc., 159, K35-K41, (2011). [1.28] C.-T. Lee, L.-H. Tsai, Y.-H. Lin and G.-R. Lin, “A chemical vapor deposited silicon-rich silicon carbide P-N junction based thin-film photovoltaic solar cell” ECS J. Solid State Sci. and Technol., 1, Q144-Q148, (2012). [1.29] T.-C. Lo, L.-H. Tsai, C.-H. Cheng, P.-S. Wang, Y.-H. Pai, C.-I. Wu and G.-R. Lin, J. “Self-aggregated Si nanocrystals in amorphous Si-rich SiC,” Non-Crystalline Solids, 358, 2126-2129, (2012). [1.30] C.-H. Cheng, P.-S. Wang, C.-I. Wu and G.-R. Lin, “Nano-Crystalline Silicon-Based Bottom Gate Thin-Film Transistor Grown by LTPECVD With Hydrogen-Free He Diluted,” IEEE J. Display Technol., 9, 1-9, (2013). [1.31] G.-R. Lin, Y.-H. Pai, C.-T. Lin and C.-C. Chen, “Comparison on the electroluminescence of Si-rich SiNx and SiOx based light-emitting diodes,” Appl. Phys. Lett., 96, 263514, (2010). [1.32] H. Choi, F. Borondics, D. A. Siegel, S. Y. Zhou, M. C. Martin, “Broadband electromagnetic response and ultrafast dynamics of few-layer epitaxial grapheme,” Appl. Phys. Lett., 94, 172102, (2009). [1.33] T. Stauber, N. M. R. Peres, A. K. Geim, “Optical conductivity of graphene in the visible region of the spectrum,” Phys. Rev. B, 78, 085432, (2008). [1.34] M. Liu, X. Yin, E. U. Avila, B. Geng, T. Zentgraf, L. Ju, F. Wang, X. Zhang, “ A graphene-based broadband optical modulator,” Nature, 474, 64-67, (2011). [1.35] M. Liu, X. Yin, X. Zhang, “Double-Layer Graphene Optical Modulator,” Nano Lett., 12, 1482-1485, (2012). [1.36] C.-C. Lee, S. Suzuki, W. Xie, T. R. Schibli, “Broadband graphene electro-optic modulators with sub-wavelength thickness,” Opt. Express, 20, 5264-5269, (2012). [1.37] B. S. Rodriguez, R. Yan, M. M. Kelly, T. Fang, K. Tahy, W. S. Hwang, D. Jena, L. Liu, H. G. Xing, “Broadband graphene terahertz modulators enabled by intraband transitions,” Nat. Commun., 3,780-785, (2012). [1.38] Y.-H. Lin, Y.-C. Chi and G.-R. Lin, “Nanoscale charcoal powder induced saturable absorption and mode-locking of a low-gain erbium-doped fiber-ring laser” Laser Phys. Lett., 10, 055105, (2013). [1.39] Z. Sun, T. Hasan, F. Torrisi, D. Popa, G. Privitera, F. Wang, F. Bonaccorso, D.-M. Basko, and A.-C. Ferrari, “Graphene mode locked ultrafast laser,” ACS Nano, 4, 803-810, (2010). [1.40] S.-Y. Set, H. Yaguchi, Y. Tanaka, and M. Jablonski, “Ultrafast fiber pulsed lasers incorporating carbon nanotubes,” IEEE J. Sel. Top. Quantum Electron, 10, 137-146, (2004). [1.41] Y.-W. Song, S.-Y. Jang, W.-S. Han, and M.-K. Bae, “Graphene mode-lockers for fiber lasers functioned with evanescent field interaction” Appl. Phys. Lett., 96, 051122, (2010). [1.42] Y.-H. Lin, G.-R. Lin “Kelly sideband variation and self four-wave-mixing in femtosecond fiber soliton laser mode-locked by multiple exfoliated graphite nano-particles,” Laser Phys. Lett., 10, 045109, (2013). [1.43] M.-W. Marshall, S. Popa-Nita, J.-G. “Shapter measurement of functionalised carbon nanotube carboxylic acid groups using a simple chemical process,” Carbon, 44, 1137-1141, (2006). [1.44] Q. Bao, H. Zhang, Y. Wang, Z. Ni, Y. Yan, Z. X. Shen, K. P. Loh, and D. Y. Tang, “Atomic-layer graphene as a saturable absorber for ultrafast pulsed lasers,” Adv. Funct. Mater., 19, 3077–3083, (2009). [1.45] A. Martinez, K. Fuse, and S. Yamashita, “Mechanical exfoliation of graphene for the passive mode-locking of fiber lasers,” Appl. Phys. Lett., 99, 121107, (2011). [1.46] G. Sobon, J. Sotor, and K. M. Abramski, “All-polarization maintaining femtosecond Er-doped fiber laser mode-locked by graphene saturable absorber,” Laser Phys. Lett., 9, 581–586, (2012). [2.1] M. Singleton, P. Nash, “The C-Ni (carbon – Nickel) System,” Bulletin of Alloy Phase Diagrams, 10, 121-126, (1989). [2.2] Y. Gamo, A. Nagashima, M. Wakabayashi, M. Terai, C. Oshima, “Atomic structure of monolayer graphite formed on Ni (111),” Surface Science, 374, 61-64, (1997). [2.3] J. Wintterlin, M.-L. Bocquet, “Graphene on metal surface,” Surface Science, 603, 1841-1852, (2009). [2.4] J. Ma, D. Alfe, A. Michaelides, E. Wang, “Stone wales defects in graphene and other planar sp2- bonded materials,” Phys. Rev. B., 80, 033407, (2009). [2.5] J. Lahiri, Y. Lin, P. Bozkurt, I. I. Oleynik, M. Batzill, “An Extended Defect in Graphene as a Metallic Wire,” Nat. Nanotechnol., 5, 326-329, (2010). [2.6] R. H. Telling, C. P. Ewels, A. A. Barbary, M. I. Heggie, “Wigner Defects Bridge the Graphite Gap,” Nat. Mater., 2, 333-337, (2003). [2.7] A. V. Krasheninnikov, P. O. Lehtinen, A. S. Foster, P. Pyykko‥ , R. M. Nieminen, “Embedding Transition-Metal Atoms in Graphene: Structure, Bonding, and Magnetism,” Phys. Rev. Lett., 102, 126807, (2009). [2.8] P. O. Lehtinen, A. S. Foster, A. Ayuela, A. V. Krasheninnikov, K. Nordlund, R. M. Nieminen, “Magnetic,; Properties and Diffusion of Adatoms on a Graphene Sheet,” Phys. Rev. Lett., 91, 017202, (2003). [2.9] F. Banhart, J. Kotakoski, A. V. Krasheninnikov, “Structural Defects in Graphene,” ACS Nano, 5, 26-41, (2011). [2.10] A. C. Ferrari, J. C. Meyer, V. Scardaci, C. Casiraghi, M. Lazzeri, F. Mauri, S. Piscanec, D. Jiang, K. S. Novoselov, S. Roth, A. K. Geim, “Raman Spectrum of Graphene and Graphene Layers,” Phys. Rev. Lett., 97, 187401, (2006). [2.11]J. Lahiri, Y. Lin, P. Bozkurt, I. I. Oleynik, M. Batzill, “An Extended Defect in Graphene as a Metallic Wire,” Nat. Nanotechnol., 5, 326-329, (2010). [2.12]S. Vizireanu, L. Nistor, M. Haupt, V. Katzenmaier, C. Oehr, G. Dinescu, “Carbon Nanowalls Growth by Radio Frequency Plasma-Beam-Enhanced Chemical Vapor Deposition,” Plasma Process. Polym., 5, 263-268, (2008). [2.13] S. Thiele, A. Reina, P. Healey, J. Kedzierski, P. Wyatt, P. L. Hsu, C. Keast, J. Schaefer, J. Kong, “Engineering polycrystalline Ni films to improve thickness uniformity of the chemical-vapor deposition-grown graphene films,” Nanotechnol., 21, 015601, (2010). [2.14] Y.T. Kim, D.S. Kim, D.H. Yoon, “PECVD SiO2 and SiON films dependant on the rf bias power for low-loss silica waveguide,” Thin solid films, 475, 271-274, (2005). [2.15] C. S. Tan, A. Fan, K. N. Chen, and R. Reif, “Low-temperature thermal oxide to plasma-enhanced chemical vapor deposition oxide wafer bonding for thin-film transfer application,” Appl. Phys. Let., 82, 2649-2651, (2003). [3.1] M. Cecilia, H. Kim, M. Chhowalla, “A review of chemical vapour deposition of graphene on copper,” J. Mater. Chem., 21, 3324-3334, (2011). [3.2] M. Losurdo, M. M. Giangregorio, P. Capezzuto, G. Bruno, “Graphene CVD growth on copper and nickel: role of hydrogen in kinetics and structure,” Phys. Chem. Chem. Phys., 13, 20836-20843, (2011). [3.3] X. Li, W. Cai, J. An, S. Kim, J. Nah, D. Yang, R. Piner, A. Velamakanni, I. Jung, E. Tutuc, S. K. Banerjee, L. Colombo, R. S. Ruoff, “Large-area synthesis of high-quality and uniform graphene films on copper foils,” Science, 324, 1312-1314, (2009). [3.4] K. S. Kim, Y. Zhao, H. Jang, S. Y. Lee, J. M. Kim, K. S. Kim, J.-H. Ahn, P. Kim, J.-Y. Choi, B. H. Hong, “Large-scale pattern growth of graphene films for stretchable transparent electrodes,” Nature, 457, 706-710, (2009). [3.5] S. Bhaviripudi, X. Jia, M. S. Dresselhaus, J. Kong, “Role of Kinetic Factors in Chemical Vapor Deposition Synthesis of Uniform Large Area Graphene Using Copper Catalyst,” Nano Lett., 10 , 4128-4133, (2010). [3.6] C. S. Lee, L. Baraton, Z. He, J.-L. Maurice, M. Chaigneau, D. Pribat, C. S. Cojocaru, “Dual graphene films growth process based on plasma-assisted chemical vapor deposition,” Proc. SPIE, 7761,77610P, (2010). [3.7] I. Vlassiouk, M. Regmi, P. Fulvio, S. Dai, P. Datskos, G. Eres, S. Smirnov, “Role of Hydrogen in Chemical Vapor Deposition Growth of Large Single-Crystal Graphene,” ACS Nano, 5, 6069-6076, (2011). [3.8] Q. Yu, J. Lian, S. Siriponglert, H. Li and Y. P. Chen, “Graphene segregated on Ni surfaces and transferred to insulators,” Appl. Phys. Lett., 93, 113103, (2008). [3.9] R. H. Telling, C. P. Ewels, A. A. Barbary and M. I. Heggie, “Wigner defects bridge the graphite gap,” Nat. Mater., 2, 333-337, (2003). [3.10] Y. Gamo, A. Nagashima, M. Wakabayashi, M. Terai and C. Oshima, “Atomic structure of monolayer graphite formed on Ni (111)” Surf. Sci., 374, 61-64, (1997). [3.11] A. Gupta, G. Chen, P. Joshi, S. Tadigadapa and P. C. Eklund, “Raman scattering from high-frequency phonons in supported n-graphene layer films,” Nano Lett., 6, 2667-2673, (2006). [3.12] A. Reina, X. Jia, J. Ho, D. Nezich, H. Son, V. Bulovic, M. S. Dresselhaus and J. Kong, “Large area, few-layer graphene films on arbitrary substrates by chemical vapor deposition,” Nano Lett., 9, 30-35, (2009). [3.13] C.-Y. Su, A.-Y. Lu, Y. Xu, F.-R. Chen, A. N. Khlobystov and L.-J. Li, “High-quality thin graphene films from fast electrochemical exfoliation,” ACS Nano, 5, 2332-2339, (2011). [3.14] L. J. Cote, F. Kim and J. Huang, “Langmuir-Blodgett assembly of graphite oxide single layers,” J. Am. Chem. Soc., 131, 1043-1049, (2009). [3.15] F. Banhart, J. Kotakoski and A. V. Krasheninnikov, “Structural defects in grapheme,” ACS Nano, 5, 26-41, (2011). [3.16] Y.-H. Lin and G.-R. Lin, “Kelly sideband variation and self-four-wave-mixing in femtosecond fiber soliton laser mode-locked by multiple exfoliated graphite nano-particles,” Laser Phys. Lett., 10, 045109, (2013). [3.17] S. De and J. N. Coleman,“Are There Fundamental Limitations on the Sheet Resistance and Transmittance of Thin Graphene Films?,”ACS Nano, 4, 2713-2720, (2010). [3.18] L. Baraton, L. Gangloff, S. Xavier, C. S. Cojocaru, V. Huc, P. Legagneux, Y. H. Lee and D. Pribat, “Growth of graphene films by plasma enhanced chemical vapour deposition” Proc. SPIE, 2009, 7399, 73990T. [3.19] J. L. Qi, W. T. Zheng, X. H. Zheng, X. Wang and H. W. Tian, “Relatively low temperature synthesis of graphene by radio frequency plasma enhanced chemical vapor deposition,” Appl. Surf. Sci., 257, 6531-6534, (2011). [4.1] C.-C. Lee, S. Suzuki, W. Xie, T. R. Schibli, “Broadband graphene electro-optic modulators with sub-wavelength thickness,” Opt. Express, 20, 5264-5269, (2012). [4.2] X. Guo, T. P. Ma, “Tunneling Leakage Current in Oxynitride: Dependence on Oxygen/Nitrogen Content,” IEEE Electron Device Lett., 19, 207-209, (1998). [4.3] Y. C. Yeo, Q. Lu, W. C. Lee, T.-J. King, C. Hu, X. Wang, X. Guo, T. P. Ma, “Direct Tunneling Gate Leakage Current in Transistors with Ultrathin Silicon Nitride Gate Dielectric,” IEEE Electron Device Lett., 21, 540-542, (2000). [4.4] J. Proakis, M. Salehi, “Digital Communications,” McGraw-Hill Education, (2007). [4.5]H. Jafarkhani, “A Quasi-Orthogonal Space–Time Block Code,” IEEE Transactions on, 49, 1-4, (2001). [4.6] Q. Bao, H. Zhang, Y. Wang, Z. Ni, Y. Yan, Z. X. Shen, K. P. Loh, and D. Y. Tang, “Atomic-layer graphene as a saturable absorber for ultrafast pulsed lasers,” Adv. Funct. Mater., 19, 3077–3083, (2009). [4.7] Y.-H. Lin, Y.-C. Chi and G.-R. Lin, “Nanoscale charcoal powder induced saturable absorption and mode-locking of a low-gain erbium-doped fiber-ring laser” Laser Phys. Lett., 10, 055105, (2013). [4.8] P. L. Huang, S. C. Lin, C. Y. Yeh, H.-H. Kuo, S. H. Huang, G.-R. Lin, L. J. Li, C. Y. Su, and W.-H. Cheng, “Stable mode-locked fiber laser based on CVD fabricated graphene saturable absorber,” Opt. Express, 20, 2460-2465, (2012). | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/63411 | - |
dc.description.abstract | 在本篇論文中,我們以電漿輔助化學氣象沉積在低溫無氫的環境中以及極薄的鎳上合成多層石墨烯,沉積的碳原子一開始被鎳吸收然後在鎳的表面析出形成多層石磨烯。我們製程的溫度大約可以降到475oC,鎳厚度大約可以縮小到30 nm。因為鎳在低溫(475 oC )時的溶解度非常低,所以我們析出之石墨烯的層數不會太多,可以控制在很小的數值。我們用拉曼分析發現,在不同的鎳厚度去合成石墨烯,其中D與2D的強度幾乎保持不變,但是G的強度會隨著鎳厚度增加而增加,換而言之石墨烯的層數也隨之增加,直到鎳的厚度大於50 nm之後,G的強度才停止增加,會造成這個原因主要是因為由PECVD所提供的碳原子有限,所以鎳厚度超過50 nm之後所吸收的碳原子並沒有再增加,所以析出的石墨烯的層數相仿,拉曼圖形也相似。當我們將沉積時間從600縮減到100 s時,多層石墨烯在波長550 nm的光源下之線性穿透率由83%上升至93%,代表層數由八層縮小至三層,而拉曼光譜中的ID/IG值由1.8縮小到0.2,此外G峰之半高寬由67縮小至37.2 cm-1 ,這些證據都一再顯示當我們將石墨烯的沉積時間縮短,其品質會變好。
三種不同的石磨烯光調製元件在本論文中製作,並討論。 其中兩個光調製器是藉由電壓來控制光強度,另外一個是藉由光來控制光強度。第一個是穿透式石墨烯光調製器。在調製深度為20%的情況下,當介電質厚度由200 nm降到10 nm,則驅動電壓可由30 V降到5 V。反射式的石磨烯光調製器的效果沒有穿透式的效果來的好。在介電質的厚度為50 nm時,需要8 V才有5%的調製深度 。這不好的表現來於較厚的介電質以及元件在大電壓較易短路。最後一個光調製器,是石磨烯放在側磨光纖所做成。當輸入功率為500 mW 時, 在雷射功率為85 mW照射下,輸出光功率可提升至525, 519以及516 mW,其中輸入光波長依序為1520, 1550以及1580 nm,對應的調製深度為5, 3.8 以及 3.2 %。調製深度隨著輸入光波長縮短而增加。這是因為在較短的波長下,光有較強的能量可以將石墨烯之載子激發到較高的能階,而石磨烯在較高的能階有較多的空位階所以1520 nm 的雷射可以比1550及1580 nm激發較多的載子,故調製深度較大。 當輸入功率增加到1000 mW時,照射功率一樣維持在85 mW,最大的調製深度可以被達到。調製深度為5.8, 5.1 and 4.6 % 對應之光波長為1520, 1550以及1580 nm。在1550 nm輸入功率為1000 mW下的光調製深度從1.2 提升到 5.1 %,當照射光功率從24 提升到 85 mW。調製深度上升主要是因為當照射之雷射強度上升時,有較多的石墨烯載子可以被激發。當輸入光功率提升到2000 mW時,輸入波長1550 nm 在 85 mW 之照射下,調製深度由5.1下降至3.3 %。 這是因為大部分的能階在輸入功率為1000 mW就已經被填滿,所以當光功率提升至2000 mW 時,功率並不會比1000 mW 有顯著的提升,故調製深度下降。 石墨烯被當作飽和吸收體在穿透式以及反射式的被動鎖模摻鉺光纖雷射系統中。在穿透式的系統中,脈寬由441 提升至 483 fs光譜的半高寬由6 縮小至 4.2 nm當系統的電流由 900 縮小至 200 mA。系統的復現率為 28.57 MHz。在反射式的系統中,脈寬由 796 拓寬為874 fs光譜的半高寬由 3.25縮小至2.2 nm。系統的復現率為16.66 MHz。較小的復現率是因為反射式系統需要額外長度的光纖。 較小的脈寬可由穿透式的系統達成因為在反射式的系統中,大約1.8 dB的損耗是不可避免的。 另外穿透式系統的TBP值在輸入高電流時(800~900 mA)為0.31。這與理想值很靠近。而對於兩個系統的臨界電流為400 mA。當電流小於400 mA時其值縮小的很快,代表系統不穩定。 | zh_TW |
dc.description.abstract | The synthesis of few-layer graphene sheet on ultra-thin nickel film coated SiO2/Si substrate by using hydrogen-free plasma-enhanced chemical vapor deposition with in-situ low-temperature carbon dissolution is preliminarily demonstrated. The deposited carbon atoms are initially dissolved into the nickel matrix and subsequently participated out on nickel film surface. The threshold carbon dissolution temperature for synthesizing few-layer graphene is observed as low as 475oC, and the critical thickness of host nickel film is at least 30 nm. Due to the ultra-low solubility of carbon atoms into nickel film at threshold temperature of 475oC, the layer number of few-layer graphene can be precisely controlled. Raman scattering analysis indicates almost identical D and 2D peak intensities for nickel films with different thickness, whereas the G peak enhances with increasing layer number of graphene precipitated from thicker nickel films. The saturation of G peak at 50-nm thick nickel film due to the finite carbon dissolution within a limited deposition time is observed to preserve a stabilized quality of precipitated few-layer graphene. The linear transmittance of few-layer graphene at 550 nm is increased from 83 to 93% when shortenening the deposition time from 600 to 100s, corresponding to a decrease of graphene layer number from 8 to 3 layers. The Raman scattering peak ratio of ID/IG decreases from 1.8 to 0.2 and the G-band linewidth shrinks from 67 to 37.2 cm-1 accordingly, providing strong evidence for the improved quality of few-layer graphene synthesized with the hydrogen-free and threshold temperature on ultra-thin nickel host.
There are three type graphene based optical switches demonstrated by us. Two of the modulators controlled the signals by the voltage and the other controlled the signals by the continuous wave laser power. The first one is transmission type graphene modulator. For 20 % of modulation depth, the drive voltage can be decreased from 30 V to 5 V when the insulator thickness decreases from 200nm to 10 nm. The reflection type modulator doesn’t performed well than that of transmission type modulator. The modulation depth is only 5% at 8V with the insulator thickness of 50 nm. That is caused by the thicker insulator and the device short easier than that of transmission type modulator. The last one is graphene on side polished fiber optical switch. The input power enhanced from 500 mW to 525, 519 and 516 mW for 1520, 1550 and 1580 nm of laser under 85 mW of exposition and the modulation depths are 5, 3.8 and 3.2 % respectively. The modulation depth increases when the wavelength decreases. There are more states available at higher energy stage for graphene so 1520 nm of laser can excite more carriers than that of 1550 and 1580 nm. When the input power is 1000 mW and the power of continuous wave laser is 85 mW, the maximum modulation depth can be obtained. The modulation depth for 1520, 1550 and 1580 nm are 5.8, 5.1 and 4.6 % respectively. The modulation depth for 1550 nm with the intensity of 1000 mW increases from 1.2 to 5.1 % when the continuous wave laser power increases from 24 to 85 mW. More carriers can be excited when the power of continuous waved laser increases. The modulation depth of 1550 nm under 85 mW of exposition decreases from 5.1 to 3.3 % when the input power increase from 1000 mW to 2000 mW. The states are almost filled at 1000 mW, so 2000 mW can not further excited much more carriers. Graphene is served as mode locker for both transmission type and reflection type passively mode-locked fiber laser of the erbium-doped fiber lasers (EDFLs). In transmission type system, the pulsewidth increases from 441 to 483 fs and the spectral FWHM decreases from 6 to 4.2 nm when the pumping current decreases from 900 to 200 mA. The repetition rate is 28.57 MHz. In reflection type system the pulsewidth increases from 796 to 874 fs and the spectral FWHM decrease from 3.25 to 2.2 nm. The repetition rate is 16.66 MHz. The smaller repetition rate of reflection type passively mode-locked EDFL is cause by the extra cavity length contributing by circulator. The shorter pulsewidth could be obtained from transmission type passively mode-locked EDFL because the inevitable loss 1.8 dB caused by circulator in reflection type passively mode-locked EDFL. The time bandwidth product for both system is 0.31 under high pumping current (800~900 mA). It is really close to the transform limited. The pumping threshold for both system is 400 mA. The time bandwidth product decrease very fast when the pumping current is smaller than 400 mA. | en |
dc.description.provenance | Made available in DSpace on 2021-06-16T16:40:02Z (GMT). No. of bitstreams: 1 ntu-100-R00941016-1.pdf: 4641596 bytes, checksum: 335d498edfc7ad976f8aec910d79f10d (MD5) Previous issue date: 2011 | en |
dc.description.tableofcontents | 口試委員會審定書 #
誌謝 i 中文摘要 iii ABSTRACT iv CONTENTS vii LIST OF FIGURES x LIST OF TABLES xvi Chapter 1 Introduction 1 1.1 Introduction of Graphene 1 1.1.1 Introduction of Graphene Based Electro-Absorption Modulator and All-Optics Modulator 3 1.1.2 Introduction of Graphene Passive Mode Locking 6 1.2 Motivation 7 1.3 Organization of the Thesis 8 1.4 Reference 8 Chapter 2 Graphene Grows at Different Substrate Temperatures and Different Thickness of Nickel Substrate 16 2.1 Introduction 16 2.2 Experiments 17 2.3 Results and Disscusion 18 2.3.1 The Threshold Substrate Temperature for Graphene Growing on Nickel Substrate 18 2.3.2 Graphene Growing on Different Thickness of Nickel Substrate 19 2.3.3 Surface Roughness of Substrates at Different Growing Stages 21 2.4 Summary 24 2.5 Reference 25 Chapter 3 The Quality, Linear Transmittance and The Preliminary Electrical Properties of Graphene under Differ 40 3.1 Introduction 40 3.2 Experiments 41 3.3 Results and Disscussion 42 3.3.1 Raman Analysis of Graphene under Different Deposition Times 42 3.3.2 UV-Visible Optical Spectroscopy Analysis of Graphene under Different Deposition Times 43 3.3.3 Four Point Probe Analysis of Different Deposition Time Graphen 45 3.3.4 The Sheet Resistance for Graphene Growth with Prepurge Process and Limitation of Sheet Resistance for Ideal Graphene 46 3.3.5 Graphene Growth at Different RF Power and Raman Mapping to Measure the Uniformity of Graphene Sample 48 3.3.6 Comparison of Graphene’s Quality under Hydrogen and Non-hydrogen Surrounding 49 3.3.7 Comparison of Graphene’s Quality Growth on Nickel and Copper Substrate 49 3.4 Summary 52 3.5 Reference 54 Chapter 4 Graphene’s Modulation and Mode Locking Applications 71 4.1 Introduction 71 4.2 Experiments 72 4.3 Graphene Modulation Effects 74 4.3.1 Transmission Type Graphene Modulator 74 4.3.2 Reflection Type Graphene Modulator 78 4.4 Graphene Modulation Effects on Side Polish Fiber 80 4.5 Graphene Mode Lock Application. 82 4.5.1 Transmission-Type Passively Mode-Locked EDFL System 82 4.5.2 Reflection-Type Passively Mode-Locked EDFL System 85 4.5.3 The reason for time bandwidth product less than 0.315 at low pumping current and the pulse peak power for both system at 900 mA of pumping current 88 4.6 Summary 89 4.7 Reference 91 Chapter 5 Conclusion 114 作者簡介 116 | |
dc.language.iso | en | |
dc.title | 無氫臨界溫度電漿增強氣相沉積石墨烯於光調變及鎖模之應用 | zh_TW |
dc.title | Hydrogen-free PECVD growth of few-layer graphene at threshold temperature for optical modulation and mode-locking applications | en |
dc.type | Thesis | |
dc.date.schoolyear | 100-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 吳志毅(Chih-I Wu),李晁逵(Chao-Kuei Lee),何志浩(Jr-Hau He),白益豪(Yi-Hao Pai) | |
dc.subject.keyword | 多層石墨烯,低溫,薄鎳,穿透率,拉曼光譜,石墨烯光調製元件,石墨烯超快雷射, | zh_TW |
dc.subject.keyword | Few-layer graphene,low temperature,thin nickel film, transmission, Raman scattering,graphene base modulators,graphene ultra-fast laser, | en |
dc.relation.page | 117 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2013-07-29 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
顯示於系所單位: | 光電工程學研究所 |
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