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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 林浩雄 | |
dc.contributor.author | Yu-Chung Chin | en |
dc.contributor.author | 金宇中 | zh_TW |
dc.date.accessioned | 2021-06-16T16:17:19Z | - |
dc.date.available | 2013-02-21 | |
dc.date.copyright | 2013-02-21 | |
dc.date.issued | 2013 | |
dc.date.submitted | 2013-02-05 | |
dc.identifier.citation | [1] M. J. Jou, Y. T. Cherng, H. R. Jen, and G. B. Stringfellow, ”Organometallic vapor phase epitaxial growth of a new semiconductor alloy: GaP1−xSbx,” Appl. Phys. Lett. 52, pp. 549-551, (1988).
[2] F. Kohler, G. Bohm, R. Meyer, and M.-C. Amann, “Band gap and band offset of (GaIn)(PSb) lattice matched to InP,” Appl. Phys. Lett. 87, pp. 032102, 2005. [3] D. H. Jaw, M. J. Jou, Z. M. Fang and G. B. Strignfellow, “Optial properties of Ga1-xInxP1-ySby alloys grown by organometallic vapor phase epitaxial,” J. Appl. Phy. 68, pp. 3538-3543, 1990. [4] C. Grasse. R. Meyer, U. Breuer, G. Bohm, M-C. Amann, “Growth of various antimony-containing alloys by MOVPE,” J. Cryst. Growth 310, pp. 4835-4838, 2008. [5] E. Lendvay, T. Gorog, L. Andor, L. Petras and A. L. Toth, ”A novel double heterostructure: the GaAs/GaPAsSb system,” J. Cryst. Growth 79, pp. 928-934, 1986. [6] S. R. Johnson, P. Dowd, W. Braun, U. Koelle, C. M. Ryu, M. Beaudoin, C. Z. Guo, and Y. H. Zhang, ”Long wavelength pseudomorphic InGaPAsSb type-I and type-II active layers grown on GaAs,” J. Vac. Sci. Technol. B 18, pp.1545-1548, 2000. [7] P. Dowd, W. Braun, D. J. Smith, C. M. Ryu, C.-Z. Guo, S.-L. Chen, U. Koelle, S. R. Johnson, and Y.-H. Zhang, “Long wavelength (1.3 and 1.5 μm) photoluminescence from InGaAs/GaPAsSb quantum wells grown on GaAs,” Appl. Phys. Lett. 75, pp. 1267-1269, 1999. [8] Y. C. Chin, H. H. Lin, and C. H. Huang, “InGaP/GaAs0.57P0.28Sb0.15/GaAs double HBT with weakly type-II base/collector junction,” IEEE Electron Device Lett. 33, pp. 489-491, 2012. [9] T. Fukui, “Atomic structure model for Ga1-xInxAs solid solution,” J. Appl. Phys. 57, pp. 5188-5190, 1985. [10] K. C. Hass, R. J. Lempert, and H. Ehrenreich, ”Effect of Chemical and Structural Disorder in Semiconducting Pseudobinary Alloys,” Phys. Rev. Lett. 52, pp. 77-80, 1984. [11] J. R. Gregg, C. W. Myles, and Y. T. Shen, ”Electronic properties of the quaternary semiconductor alloy GaSb1-x-yAsxPy: Coherent-potential approximation,” Phys. Rev. B 35, pp. 2532-2535, 1987. [12] J. K. Shurtleff, R. T. Lee, C. M. Fetzer, and G. B. Stringfellow, “Band-gap control of InGaP using Sb as a surfactant,” Appl. Phys. Lett. 75, pp. 1914-1916, 1999. [13] G.B. Stringfellow, R.T. Lee, C.M. Fetzer, J.K. Shurtleff, Y. Hsu, S.W. Jun, S. Lee, T.Y. Seong, ”Surfactant effects of dopants on ordering in GaInP,” J. Electron. Mater. 29 pp. 134-139, 2000. [14] J.K. Shurtleff, R.T. Lee, G.B. Stringfellow, ”Adsorption and desorption of the surfactant Sb on GaInP grown by organometallic vapor phase epitaxy,” Proceedings of IEEE 27th International Symposium on Compound Semiconductors, Piscataway, NJ, USA, pp. 197–203, 2000. [15] T. Tanaka, K. Takano, T. Tsuchiya, and H. Sakaguchi, ”Ordering-induced electron accumulation at GaInP/GaAs hetero-interfaces,” J. Cryst. Growth 221, pp. 515-519, 2000. [16] J. D. Vriendt, P. Laine, C. Lerouge, X. Xu, ”Mobile network evolution on the move,“ IEEE. Commun. Mag. pp. 104-111, April 2002. [17] Yuefei Yang, Byounguk In, Yaochung Chen, Chanh Nguyen, Daniel Hou, Joe Zhou, Kevin Feng, Wing Yau and Dave Wang, ”A Super Ruggedness InGaP/GaAs HBT for GSM Power Amplifiers,” GaAs MANTECH Conf. Dig. p. 11.3, 2005. [18] J. H. Kim, J. H. Kim, Y. S. Noh, and C. S. Park, “An InGaP–GaAs HBT MMIC smart power amplifier for W-CDMA mobile handsets,” IEEE J. Solid-State Circuits 38, pp. 905–910, 2003. [19] G. Hau, C. Caron, J. Turpel, and B. MacDonald, “A 20 mA quiescent current 40% PAE WCDMA HBT power amplifier module with reduced current consumption under backoff power operation,” IEEE RFIC Symp. Dig. pp. 243–246, 2005. [20] K. Yamamoto, A. Okamura, T. Matsuzuka, Y. Yoshii, N. Ogawa, M. Nakayama, T. Shimura, and N. Yoshida, “A 2.5-V low-reference-voltage, 2.8-V low-collector-voltage operation, HBT power amplifier for 0.8–0.9-GHz broadband CDMA applications,” in IEEE CSIC Symp. Dig. pp. 101–104, 2009. [21] P. Stefan, A. David, ”The evolution of LTE toward LTE Advanced,”. Journal of Communications 4 (3): pp. 146–154, 2009. [22] C. –T. Sah, R. N. Noyce, and W. Shockley, ”Carrier generation and recombination in p-n junctions and p-n junction characteristics,” Proc. IRE, 45 (9), p. 1228, 1957. [23] Herbert Kroemer, ”Heterostructure Bipolar Transistors and Integrated Circuits,” IEEE Proc. 70, pp. 13-25, 1982. [24] H. H. Lin and S. C. Lee, ”Super gain AlGaAs/GaAs heterojunction bipolar transistors using an emitter edge thinning design,” Appl. Phys. Lett. 47, pp. 839-841, 1985. [25] H. Beneking and L. M. Su, ”Double heterojuncion NpN GaAlAs/GaAs bipolar transistor,” IEE Electron Lett, 18, pp. 25-26, 1982. [26] S. L. Su, ”Double hetreojunction AlGaAs/GaAs bipolar transistors by MBE with a current gain of 1650,” IEEE EDL. 4, pp. 130-132, 1983. [27] Osamu Ueda, ”Reliability issues in III-V compound semiconductor devices: optical devices and GaAs-based HBTs” Microelectronics Reliability, 39, pp. 1839-1855, 1999. [28] N. Pan, J. Elliott, M. Knowles, D. P. Vu, K. Kishimoto, J. K. Twynam, H. Sato, M. T. Fresina, and G. E. Stillman, ”High Reliability InGaP/GaAs HBT,” IEEE Electron Device Lett. 19, pp. 115-117, 1998. [29] B. Yeat, P. Chandler. M. Culver, D. D'Avanzo, G. K. Essilfie, C. P. Hutchinson, D. Kuhn, T. S. Low, T. S. Shirley, T. Shirley, and W. C. Whiteley, ”Reliability of InGaP-Emitter HBTs,” GaAs MANTECH Conf. Dig. pp. 131-135, 2000. [30] T. S. Low, C. P. Hutchinson, P. C. Canfield, T. S. Shirley, R. E. Yeats, J. S. C. Chang, G. K. Essilfie, M. K. Culver, W. C. Whiteley, D. C. D'Avanzo, N. Pan, J. Elliot, and C. Lutz, ”Migration fiom an AlGaAs to an InGaP Emitter HBT IC Process for Improved Reliability,” GaAs IC Sym. Dig. pp. 153-156, 1998. [31] R. J. Welty, K. Mochizuki, C. R. Lutz, R. E. Welser, and P. M. Asbeck, “Design and performance of tunnel collector HBTs for microwave power amplifiers,” IEEE Trans. Electr. Dev. 50, pp. 894–900, 2003. C. W. Tu, P. M. Asbeck, K. Mochizuki, and R. J. Welty, “HBT with nitrogen-containing current blocking base collector interface and method for current blocking,” U. S. patent 6674103, Jan. 6, 2004. [33] K. Ikossi-Anastasiou, A. Ezis, K. R. Evan, C. E. Stutz, ”Double heterojunction bipolar transistor in AlGaAs/GaAsSb system,” IEE, Electron. Lett. 27, pp. 142-144, 1991. [34] T. Oka, T. Mishima, and M. Kudo, ”Low turn-on voltage GaAs heterojunction bipolar transistors with a pseudomorphic GaAsSb base” Appl. Phys. Lett. 78, pp. 483-485, 2001. [35] C. C. Cheung, B. P. Yan, C. C. Hsu, E. S. Yang, “Novel InGaP/GaAsSb/GaAs DHBTs,” IEEE EDSSC Conf. Proc. pp. 339–342, 2003. [36] C.H. Huang, Y.C. Chin, M.N. Jseng, C.H. Lin and Michael.H.T. Yang, ”Low turn-on voltage InGaP/GaAsSb/GaAs DHBT grown by MOCVD,” GaAs MANTECH Conf. Dig. p. 13.3, May. 2004. [37] L. P. Ramberg, P. M. Enquist, Y.‐K. Chen, F. E. Najjar, L. F. Eastman, E. A. Fitzgerald, and K. L. Kavanagh, “Lattice‐strained heterojunction InGaAs/GaAs bipolar structures: Recombination properties and device performance,” J. Appl. Phys. 61, pp. 1234-1236, 1987. [38] Y. Otoki, T. Tsuji, N. Sato, T. Tanaka, H. Kamogawa, and Y. Sasaki, ”6-inch MOVPE metamorphic HBT with low indium composition InGaAs base and collector for high power application,” IEEE, GaAs MANTECH Conf. Dig. p. 13b, 2002. [39] K. L. Lew, S. F. Yoon, H. Wang, S. Wicaksono, J. A. Gupta, and S. P. McAlister, “High-gain low turn-on voltage AlGaAs/GaAsNSb/GaAs heterojunction bipolar transistors grown by molecular beam epitaxy,” IEEE Electron Device Lett. 28, pp. 1083-1085, 2007. [40] R. E. Welser, P. M. DeLuca, and N. Pan, “Turn-on voltage investigation of GaAs-based bipolar transistors with Ga1-xInxAs1-yNy base layers,” IEEE Electron Device Lett. 21, pp. 554-556, 2000. [41] W. J. Ho, M. F. Chang. S. M. Beccue, P. J. Zampardi, J. Yu, A. Sailer, R. L. Pierson, and K. C. Wang, “A GaAs BiFET LSI technology”, GaAs IC Sym. Tech. Dig. pp. 47-50, 1994. [42] R. Ramanathan, M. Sun, P. J. Zampardi, A. G. Metzger, V. Ho, C. Wei, P. Tran, H. Shao, N, Cheng, C. Cismaru, J. Li, S. Chang, P. Thompson, M. Kuhlman, and K. Weller, “Commercial viability of a merged HBT-FET (BiFET) technology for GaAs power amplifiers,” GaAs MANTECH Conf. Dig. pp. 255–259, 2007. [43] W. Peatman, M. Shokrani, B. Gedzberg, W. Krystek and M. Trippe, “InGaP-PlusTM: Advanced GaAs BiFET technology and applications,” GaAs MANTECH Conf. Dig. pp. 243–246, 2007. [44] T. Henderson, J. Middleton, J. Mahoney, S. Varma, T. Rivers, C. Jordan, and B. Avrit, “High-performance BiHEMT HBT / E-D pHEMT intergation,” GaAs MANTECH Conf. Dig. pp. 247–250, 2007. [45] C. K. Lin, T. C. Tsai, S. L. Yu, C. C. Chang, Y. T. Cho, J. C. Yuan, C. P. Ho, T. Y. Chou, J. H. Huang, M. C. Tu, and Y. C. Wang, “Monolithic integration of E/D-mode pHMT and InGaP HBT technology on 150-nm GaAs wafers,” GaAs MANTECH Conf. Dig. pp. 251–254, 2007. [46] M. C. Tu, Y. C. Wang, and H. Y. Ueng, “Linearity optimizing on HBT power amplifier design,” Microelectronics J. 40, pp. 1714–1718, 2009. [47] T. Niwa, T. Ishigaki, H. Shimawaki, Y. Nashimoto, “A composite-collector InGaP/GaAs HBT with high ruggedness for GSM power amplifiers,” IEEE MTT-S . Microw. Symp. Tech. Dig. 2, pp. 711–714, 2003. [48] M. Pfost, V. Kubrak, and P. Zwicknagl, “Optimization of the collector profile of InGaP/GaAs HBTs for increased robustness,” IEEE GaAs MANTECH Conf. Dig. pp. 115–118, 2003. [49] C.-P. Lee, F. H. F. Chau, W. Ma, and N. L. Wang, “The safe operating area of GaAs-Based heterojunction bipolar transistors,” IEEE Trans. Electr. Dev. 53, pp. 2681–2688, 2006. [50] W. Liu, A. Khatibzadeh, J. Sweder, and H. Chau, “The use of base ballasting to prevent the collapse of current gain in AlGaAs/GaAs heterojunction bipolar transistors” IEEE Trans. Electr. Dev. 43, pp. 245-250, 1996. [51] H. Nagai, “Structure of vapor-deposited Gaxln1-xAs crystals,” J. Appl. Phys. 45, pp. 3789-3794, 1974. [52] V. Swaminathan and A. T. Macrander, Materials Aspects of GaAs and InP Based Structures. (Prentice-Hall, New Jersey, 1991), p. 22. [53] J. W. Matthews, “Defects associated with the accommodation of misfit between crystals, “ J. Vac. Sci. Technol. 12, pp. 126-133, 1975. [54] P. Maigne, J. M. Baribeau, “Measurement of residual strain in InGaAs buffer layers, “ J. Appl. Phys. 76, pp. 1962-1964, 1994. [55] C. J. Wu, Z. C. Feng, W. M. Chang, C. C. Yang, and H. H. Lin, “Bond lengths and lattice structure of InP0.52Sb0.48 grown on GaAs, ”Appl. Phys. Lett. 101, 091902, 2012. [56] F. C. Lin, W. S. Chi, Y. S. Huang, H. Qiang, F. H. Pollak, D. L. Mathine, and G. H. Maracas, ”Piezoreflectance study of a GaAs/Al0.23Ga0.77As asymmetric triangular quantum well heterostructure,” Semicond. Sci. Technol. 10, pp. 1009-1016, 1995. [57] H. Mathieu, D. Auvergne, and J. Camassel, “Modulated spectroscopy of cubic semiconductors calculation of piezomodulation parameters for degenerate semiconductors,” Phys. Status Solidi b. 58, pp. 227-235, 1973. [58] P. Lautenschlager, M. Garriga, and M. Cardona, ”Temperature dependence of the interband critical-point parameters of InP,” Phys. Rev. B 36, pp. 4813-4820, 1987. [59] S. H. Wei and A. Zunger, ”Optical properties of zinc-blende semiconductor alloys: Effects of epitaxial strain and atomic ordering, ”Phys. Rev. B 49, pp. 14337-14351, 1994. Note that this paper assigned Γ6v ; (j = 3/2, mj = 3/2) to in plane light hole band and Γ7v ;(j = 3/2, mj = 1/2) to in plane heavy hole band and also pointed that along the [001] direction the roles of light hole and heavy hole are reversed. In this work, we follow standard textbooks’ assignment. For example see L. A. Coldren and S. W. Corzine, Diode lasers and photonic integrated circuits, (Wiley, New York, 1995). [60] Y. Zhang, A. Mascarenhas, H. P. Xin, and C. W. Tu, ” Valence-band splitting and shear deformation potential of dilute GaAs1-xNx alloys,” Phys. Rev. B 61, pp. 4433-4436, 2000. [61] M. H. Ya, Y. F. Chen, and Y. S. Huang, ” Nonlinear behaviors of valence-band splitting and deformation potential in dilute GaNxAs1−x alloys,” J. Appl. Phys. 92, pp. 1446-1449, 2002. [62] I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, “Band parameters for III-V compound semiconductors and their alloys,” J. Appl. Phys. 89, pp. 5815-5875, 2001. [63] J. A. Van Vechten, O. Berolo, and J. C. Woolley, ”Spin-Orbital Splitting in Compositionally Disordered Semiconductor,” Phys. Rev. Lett. 29, pp. 1400-1403, 1972. [64] S. H. Wei and A. Zunger, ”Negative spin-orbital bowing in semiconductor alloys,” Phys. Rev. B 39, pp. 6279-6282, 1989. [65] H. Mani, E. Tournie, J. L. Lazzari, C. Alibert, and A. Joullie, ”Liquid phase epitaxy and characterization of InAs1-x-ySbxPy on (100) InAs,” J. Crystal Growth 121, pp. 463-472, 1992. [66] E. F. Schubert, Doping in III-V Semiconductor, Cambridge University Press, New York, 10011-4211, 1993, pp. 509-515. [67] M. Bugajski and W. Lewandowski,“ Concentration-dependent absorption and photoluminescence of n-type InP,” J. Appl. Phys. 57, pp. 521-530, 1985. [68] M. Oueslati, M. Zouaghi, M.E. Pistol, L. Samuelson, H.G. Grimmeiss, M. Balkanski, ”Photoluminescence study of localization effects induced by the fluctuating random alloy potential in indirect band-gap GaAs1-xPx ,“ Phy. Rev. B 32, pp. 8220-8227, 1985. [69] J.E. Fouquet, A. E. Siegman, “Room‐temperature photoluminescence times in a GaAs/AlxGa1−xAs molecular beam epitaxy multiple quantum well structure,” Appl. Phys. Lett. 46, pp. 280-282, 1985. [70] T. Schmidt, K. Lischka, W. Zulehner, “Excitation-power dependence of the near-band-edge photoluminescence of semiconductors,” Phys. Rev. B 45, pp. 8989-8994, 1992. [71] M. Dinu, J. E. Cunningham, F. Quochi, H. Shah, “Optical properties of strained antimonide-based heterostructures,” J. Appl. Phys. 94, pp. 1506-1512, 2003. [72] N. N. Ledentsov, J. Bohrer, M. Beer, F. Heinrichsdorff, M. Grundmann, D. Bimberg, S. V. Ivanov, B. Ya. Meltser, S. V. Shaposhnikov, I. N. Yassievich, N. N. Faleev, P. S. Kopev, and Zh. I. Alferov, “Radiative states in type II GaSb/GaAs quantum wells,“ Phys. Rev. B 52, pp.14058-14066, 1995 [73] J. Y. Chen, B. H. Chen, Y. S. Huang, Y. C. Chin, H. S. Tsai, H. H. Lin and K. K. Tiong, ”Photoluminescence characterization of GaAs/GaAs0.64P0.19Sb0.17/GaAs heterostures grown on GaAs by metal-organic vapor-phase epitaxy,” accepted to be published on J. Lumin.. [74] H. H. Lin and S. C. Lee, “Direct measurement of the potential spike energy in AlGaAs/GaAs single-heterojunction bipolar transistors,” IEEE Electron Device Lett. vol. EDL-6, pp. 431-433, 1985. [75] Albeit no similar study on GaAsPSb so far, we believe that the distortion energy in GaAsPSb is much higher than that in GaInAs because there is a large difference between the bond lengths of GaP and GaSb. [76] M. C. Hanna, Z. H. Lu, and A. Majerfeld, “Very high carbon incorporation in metalorganic vapor phase epitaxy of heavily doped p-type GaAs,” Appl. Phys. Lett. 58, pp. 164-166, 1991. [77] D. Olego and M. Cardona, “Photoluminescence in heavily doped GaAs. I. Temperature and hole-concentration dependence,” Phys. Rev. B 22, pp. 886-893, 1980. [78] S. C. Jain and D. J. Roulston. “A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and GexSi1-x strained layers,” Solid-State Electronics 34, pp. 453-465, 1991. [79] S. M. Sze, Physics of Semiconductor Devices. New York: Wiley, 1981, pp. 77. [80] E. S. Harmon, M. R. Melloch, and M. S. Lundstrom, “Effective band-gap shrinkage in GaAs,” Appl. Phys. Lett. 64, pp. 502-504, 1994. [81] V. Swaminathan and A. T. Macrander, Materials Aspects of GaAs and InP Based Structures, Prentice-Hall, New Jersey, 1991, pp. 19. [82] S.-H. Tsai, R.-B. Chiou, T.-Y. Chou, C.-K. Lin, and Dennis Williams,” An ultra high ruggedness performance of InGaP/GaAs HBT multi-band power amplifier application,” GaAs MANTECH Conf. Dig. pp. 123-126, 2012. [83] K. Iniewski, Nano-Semiconductors Devices and Technology, CRC Press 2011, pp. 495-496. [84] W. Liu, Handbook of III-V Heterojunction Bipolar Transistors, New York: John Wiley & Sons, 1998, pp. 158-159. [85] S. Tiwari and D. J. Frank, “Empirical fit to band discontinuities and barrier heights in III-V alloy systems,” Appl. Phys. Lett. 60, pp. 630-632, 1992. [86] K. Alberi, J. Wu, W. Walukiewica, K. M. Yu, O. D. Dubon, S. P. Watkins, C. X. Wang, X. Liu, Y.-J. Cho, and J. Furdyna, “Valence-band anticrossing in mismatched III-V semiconductor alloys,” Phys. Rev. B 75, pp. 045203, 2007. [87] T. Kikkawa, T. Nishioka, H. Tanaka, “Ordered InGaPSb/GaAs-based FET and HBT structures grown by MOVPE,” IEEE IPRM Conf. Proc. pp. 464–467, 2001. [88] S. Froyen, A. Zunger, and A. Mascarenhas, “Polarization fields and band offsets in GaInP/GaAs and ordered/disordered GaInP superlattices,” Appl. Phys. Lett. 68, pp. 2852-2854, 1996 [89] S. C. Lee, and H. H. Lin, “Transport theory of the double heterojunction bipolar transistor based on current balancing concept,“ J. Appl. Phys. 59, pp. 1688-1695, 1986. [90] C. M. S. Ng, Peter A. Houston, and H. K. Yow, ”Analysis of the temperature dependence of current gain in heterojunction bipolar transistors,”. IEEE Trans. Electron Devices, 44, pp. 17-24, 1997. [91] W. Liu, Handbook of III-V Heterojunction Bipolar Transistors, New York: John Wiley & Sons, 1998, pp. 140-141. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/62979 | - |
dc.description.abstract | 在本論文中,我們成功地以金屬有機氣相化學沉積成長了高品質的銻磷砷化鎵及銻磷化銦鎵薄膜,在銻磷砷化鎵方面: 我們以X-ray 來研究其晶格常數與(001),(115) 面的應變量 (strain) 並得出其晶格常數為5.6927埃。 經由壓電調制光譜分析 (piezo-reflectance) 與應變量的計算而得出其能隙 (energy gap) Eg 為 1.256 電子伏特 (eV) 與 形變位能 (shear deformation potential) b = -1.31電子伏特。我們也發現此種化合物具有極大的負彎曲的自旋-軌道角動量分裂能量 (negative bowing of spin-orbital splitting)。藉由分析其光激光 (photoluminescence),調制光譜 (photoreflectance) 與應變量,我們發現銻磷砷化鎵與砷化鎵接面之能帶位準為第二型能帶位準 (type II band alignment) 。此外,我們成功的製作出以銻磷砷化鎵為基極層 (base layer) 的異質接面雙極性電晶體 (HBT),由其電壓與電流特性知道此種材料對於實現低耗能、高線性度電晶體有非常大的潛力,再者,我們提出了一個藉由其光激光(photoluminescence)、電壓與電流及電壓與電容特性的方法來計算出其與砷化鎵之帶偏移(band offset) ,我們得出導電帶偏移 (ΔEC) : 44毫電子伏特 (meV),價電帶偏移 (ΔEV) : 221毫電子伏特。由此帶偏移,我們也得到了銻磷砷化鎵與砷化鎵接面之能帶位準為第二型能帶位準的結果。另外,在本論文中,我們也研究銻磷化銦鎵/砷化鎵異質接面雙極性電晶體的特性,成功地藉由其正反Gummel plots (forward and reverse Gummel plots) 得到銻磷化銦鎵/砷化鎵之能帶位準為第一型能帶位準且導電帶偏移與價電帶偏移分別為0.12電子伏特與0.35 電子伏特。由其電壓與電流特性知道此種材料有較大的自我加熱 (self-heating) 效應,在用於大功率電晶體時能提供自我的保護以防止元件因為崩潰而造成永久性的損壞。 | zh_TW |
dc.description.abstract | In this dissertation, we have successfully grown high quality GaAsPSb and InGaPSb thin film by metal organic chemical vapor deposition. We measured the reciprocal space mapping of the GaAsPSb and found that its standing free lattice constant is 5.6927 A by calculating its strain on (004) and (115) lattice points. From piezo-reflectance results and strain calculation, we obtained that its band gap energy Eg and shear deformation potential b is 1.256eV and -1.31 eV respectively. We also found that it has a large negative spin-orbital bowing which is unusual in semiconductor alloys. Besides, by analyzing its photoluminescence together with the photoreflectance and strain, we concluded the type II band alignment of GaAsPSb/GaAs. We fabricated the InGaP/GaAsPSb/GaAs DHBT and measured its HBT characteristics including the forward and reverse Gummel plots, common emitter I-V and temperature dependent current gain. Its low turn-on voltage and temperature insensitive current gain indicate this material a great potential for high linearity and high efficiency HBT power amplifiers. Furthermore, our calculation indicated that the conduction and valence band offset of the GaAsPSb/GaAs junction is ΔEC = 44 meV and ΔEV = 221 meV respectively. The results also concluded the type II band alignment of GaAsPSb/GaAs. In addition, we investigated the InGaPSb/GaAs HBT and found the type I band alignment with ΔEC and ΔEV of 0.12 eV and 0.35 eV respectively. The lower ΔEV results in significant self-heating which prevents the device from permanent damage due to the breakdown. | en |
dc.description.provenance | Made available in DSpace on 2021-06-16T16:17:19Z (GMT). No. of bitstreams: 1 ntu-102-D97943034-1.pdf: 1097236 bytes, checksum: 39da89c920e4b4c09046053e7ae99a9f (MD5) Previous issue date: 2013 | en |
dc.description.tableofcontents | 致謝 i
中文摘要 ii Abstract iii Content v List of Figures vii List of Tables xii Chapter 1 Introduction 1 1.1 Background 1 1.2 Requirements of HBT PA in Cellular Phone Systems 3 1.3 GaAs HBT Development 4 1.4 Motivation and Dissertation Organization 6 Chapter 2 Structural, Electronic and Optical Properties of the GaAs0.64P0.19Sb0.17 on GaAs 8 2.1 Sample Preparation and Experimental Procedures 8 2.2 Properties of Bulk GaAs0.64P0.19Sb0.17 11 2.3 Band Alignment of GaAs/ GaAs0.64P0.19Sb0.17/GaAs 20 2.4 Summary 29 Chapter 3 InGaP/GaAs0.57P0.28Sb0.15/GaAs Double HBT 31 3.1 Experiment Methods 31 3.2 HBT Characteristics and GaAs0.57P0.28Sb0.15/GaAs Band Offsets 33 3.3 Summary 44 Chapter 4 InGaPSb/GaAs band offset and application to HBTs 46 4.1 Experiment Methods 47 4.2 Results and Discussions 48 4.3 Summary 55 Chapter 5 Conclusion and Future Work 56 5.1 Conclusion 56 5.2 Future Work 57 Reference 59 | |
dc.language.iso | en | |
dc.title | 銻磷砷化鎵與銻磷化銦鎵之特性及在異質接面雙極性電晶體之應用 | zh_TW |
dc.title | GaAsPSb and InGaPSb Alloys : Properties and Applications to Heterojunction Bipolar Transistors | en |
dc.type | Thesis | |
dc.date.schoolyear | 101-1 | |
dc.description.degree | 博士 | |
dc.contributor.oralexamcommittee | 李嗣涔,黃朝興,黃鶯聲,梁啟德,邱煥凱 | |
dc.subject.keyword | 銻磷砷化鎵,形變位能,負彎曲的自旋-軌道角動量分裂能量,第二型能帶位準,異質接面雙極性電晶體,銻磷化銦鎵,帶偏移, | zh_TW |
dc.subject.keyword | GaAsPSb,shear deformation potential,negative spin-orbital bowing,type II band alignment,HBT,InGaPSb,band offset, | en |
dc.relation.page | 70 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2013-02-05 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
顯示於系所單位: | 電子工程學研究所 |
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