請用此 Handle URI 來引用此文件:
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/62853
完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 林清富(Ching-Fuh Lin) | |
dc.contributor.author | Chun-Wei Ku | en |
dc.contributor.author | 古竣偉 | zh_TW |
dc.date.accessioned | 2021-06-16T16:12:31Z | - |
dc.date.available | 2018-03-15 | |
dc.date.copyright | 2013-03-15 | |
dc.date.issued | 2013 | |
dc.date.submitted | 2013-02-18 | |
dc.identifier.citation | 1. Web site, http://www.nasa.gov/home/index.html.
2. 黃孟嬌, 先進照明產業與技術發展機會探討. 工研院產經中心, 2009. 3. Website, http://www.epa.gov.tw/. 4. Website, http://www1.eere.energy.gov/buildings/ssl/comparing_lighting.html. 5. Technologies, A., Data Sheet — HLMP-1301, T-1 (3 mm) Diffused LED Lamps 2010. 6. Dialight Micro LED SMD LED '598 SERIES' Datasheet' 7. Program, L.-M., Nick Holonyak, Jr. 2004 Lemelson-MIT Prize Winner. 2007. 8. Narukawa, Y., et al., Phosphor-conversion white light emitting diode using InGaN near-ultraviolet chip. Japanese journal of applied physics, 2002. 41: p. 371. 9. Website, http://compoundsemiconductor.net/csc/newsdetails.php?cat=news&id=37614. 10. Website, http://www.navigant.com/. 11. 林志勳, 白光LED新興市場機會與材料發展趨勢. 工研院產經中心, 2005. 12. 黃孟嬌, 全球LED照明市場趨勢. 工研院產經中心, 2012. 13. Website, http://www.moneyweekly.com.tw/web/default.aspx. 14. Ermakov, O., et al., Yellow—Green In 1-x Ga x P and In 1-x Ga x P 1-z As z LED's and electron-beam-pumped lasers prepared by LPE and VPE. Electron Devices, IEEE Transactions on, 1979. 26(8): p. 1190-1193. 15. Sobolev, N. Si-and SiGe-Based LEDs. in Materials Science Forum. 2008. Trans Tech Publ. 16. Mo, C., et al., Growth and characterization of InGaN blue LED structure on Si (111) by MOCVD. Journal of crystal growth, 2005. 285(3): p. 312-317. 17. Kato, T., et al., GaAs/GaAlAs surface emitting IR LED with Bragg reflector grown by MOCVD. Journal of crystal growth, 1991. 107(1): p. 832-835. 18. Kim, D.C., et al., Fabrication of the hybrid ZnO LED structure grown on p-type GaN by metal organic chemical vapor deposition. Physica B: Condensed Matter, 2007. 401: p. 386-390. 19. 林原慶, 中國大陸LED產業特輯. 工研院產經中心, 2012. 20. Website, http://www.china-led.net/csa-index.shtml. 21. Website, http://www.digitimes.com.tw/. 22. Creighton, J.R. and G.T. Wang, Reversible adduct formation of trimethylgallium and trimethylindium with ammonia. The Journal of Physical Chemistry A, 2005. 109(1): p. 133-137. 23. Thompson, A.G., MOCVD technology for semiconductors. Materials Letters, 1997. 30(4): p. 255-263. 24. Horng, R. and M. Lee, Ordering effect on the performance of Ga 0.5 In 0.5 P visible light‐emitting diodes grown by metalorganic chemical vapor deposition. Journal of applied physics, 1992. 71(3): p. 1513-1516. 25. Liu, H., D. Bertolet, and J. Rogers Jr, The surface chemistry of aluminum nitride MOCVD on alumina using trimethylaluminum and ammonia as precursors. Surface science, 1994. 320(1): p. 145-160. 26. Haibo, Y., et al., High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system. Journal of Semiconductors, 2011. 32(3): p. 033002. 27. Yu, Y., et al., MOCVD growth of strain-compensated multi-quantum wells light emitting diode. Vacuum, 2003. 69(4): p. 489-493. 28. Amano, H., et al., Growth and Luminescence Properties of Mg‐Doped GaN Prepared by MOVPE. Journal of The Electrochemical Society, 1990. 137(5): p. 1639-1641. 29. Zhang, G., et al., InGaN/GaN MQW high brightness LED grown by MOCVD. Optical Materials, 2003. 23(1): p. 183-186. 30. Dem’yanets, L. and V. Lyutin, Status of hydrothermal growth of bulk ZnO: Latest issues and advantages. Journal of Crystal Growth, 2008. 310(5): p. 993-999. 31. Huang, M.H., et al., Room-temperature ultraviolet nanowire nanolasers. science, 2001. 292(5523): p. 1897-1899. 32. 洪連輝、劉立基、魏榮君, 固態物理學導論. 高立圖書有限公司, 1994. 33. Su, W.Y., J.S. Huang, and C.F. Lin, Improving the property of ZnO nanorods using hydrogen peroxide solution. Journal of Crystal Growth, 2008. 310(11): p. 2806-2809. 34. Ryu, Y., et al., Next generation of oxide photonic devices: ZnO-based ultraviolet light emitting diodes. Applied physics letters, 2006. 88(24): p. 241108-241108-3. 35. Park, S.H., S.H. Kim, and S.W. Han, Growth of homoepitaxial ZnO film on ZnO nanorods and light emitting diode applications. Nanotechnology, 2007. 18(5): p. 055608. 36. Wei, Z., et al., Room temperature< equation> pn</equation> ZnO blue-violet light-emitting diodes. Applied physics letters, 2007. 90(4): p. 042113-042113-3. 37. Lu, C.Y., et al., Ultraviolet photodetectors with ZnO nanowires prepared on ZnO: Ga/glass templates. Applied physics letters, 2006. 89(15): p. 153101-153101-3. 38. Cui, J., et al., Low-temperature growth and field emission of ZnO nanowire arrays. Journal of applied physics, 2005. 97(4): p. 044315-044315-7. 39. Cao, B., et al., Different ZnO nanostructures fabricated by a seed-layer assisted electrochemical route and their photoluminescence and field emission properties. The Journal of Physical Chemistry C, 2007. 111(6): p. 2470-2476. 40. Wang, W., et al., Field emission properties of zinc oxide nanowires fabricated by thermal evaporation. Physica E: Low-dimensional Systems and Nanostructures, 2007. 36(1): p. 86-91. 41. Cui, J. and U. Gibson, Low-temperature fabrication of single-crystal ZnO nanopillar photonic bandgap structures. Nanotechnology, 2007. 18(15): p. 155302. 42. Olson, D.C., et al., Hybrid photovoltaic devices of polymer and ZnO nanofiber composites. Thin Solid Films, 2006. 496(1): p. 26-29. 43. Peiro, A.M., et al., Hybrid polymer/metal oxide solar cells based on ZnO columnar structures. J. Mater. Chem., 2006. 16(21): p. 2088-2096. 44. Ravirajan, P., et al., Hybrid polymer/zinc oxide photovoltaic devices with vertically oriented ZnO nanorods and an amphiphilic molecular interface layer. The Journal of Physical Chemistry B, 2006. 110(15): p. 7635-7639. 45. Owen, J., et al., Organic photovoltaic devices with Ga-doped< equation>< font face='verdana'> Zn</font>< font face='verdana'> O</font></equation> electrode. Applied physics letters, 2007. 90(3): p. 033512-033512-3. 46. Web site, http://www.bandstructure.jp/Table/BAND/ZnO_zb.html. 47. Schmidt-Mende, L. and J.L. MacManus-Driscoll, ZnO–nanostructures, defects, and devices. Materials today, 2007. 10(5): p. 40-48. 48. Peng, Y.Y., T.E. Hsieh, and C.H. Hsu, White-light emitting ZnO–SiO2 nanocomposite thin films prepared by the target-attached sputtering method. Nanotechnology, 2005. 17(1): p. 174. 49. Tam, K., et al., Defects in ZnO nanorods prepared by a hydrothermal method. The Journal of Physical Chemistry B, 2006. 110(42): p. 20865-20871. 50. Djurisic, A., et al., Green, yellow, and orange defect emission from ZnO nanostructures: Influence of excitation wavelength. Applied physics letters, 2006. 88(10): p. 103107-103107-3. 51. Jin, C., A. Tiwari, and R.J. Narayan, Ultraviolet-illumination-enhanced photoluminescence effect in zinc oxide thin films. Journal of applied physics, 2005. 98(8): p. 083707-083707-7. 52. Zhu, G., et al., Optimization study of metal-organic chemical vapor deposition of ZnO on sapphire substrate. Journal of Crystal Growth, 2012. 53. Zhao, K., et al., Plasma‐assisted MBE growth of ZnO on GaAs substrate with a ZnSe buffer layer. physica status solidi (c), 2012. 54. Hoon, J.W., et al., Direct current magnetron sputter-deposited ZnO thin films. Applied Surface Science, 2011. 257(7): p. 2508-2515. 55. Vayssieres, L., Growth of arrayed nanorods and nanowires of ZnO from aqueous solutions. Advanced Materials, 2003. 15(5): p. 464-466. 56. Wei, H., et al., Hydrothermal synthesis and characterization of ZnO nanorods. Materials Science and Engineering: A, 2005. 393(1): p. 80-82. 57. 伍秀菁、汪若文、林美吟, 儀器總覽-化學分析儀器. 行政院國家科學委員會精密儀器發展中心, 1998. 58. Vispute, R., et al., Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices. Applied physics letters, 1998. 73(3): p. 348-350. 59. Guo, X. and E. Schubert, Current crowding and optical saturation effects in GaInN/GaN light-emitting diodes grown on insulating substrates. Applied Physics Letters, 2001. 78(21): p. 3337-3339. 60. Park, C.H., First-Principles Study of the Surface Energy and Atom Cohesion of Wurtzite ZnO and ZnS-Implications for Nanostructure Formation. Journal of Korean Physical Society, 2010. 56: p. 498. 61. Zhou, Z. and Y. Deng, Kinetics study of ZnO nanorod growth in solution. The Journal of Physical Chemistry C, 2009. 113(46): p. 19853-19858. 62. Govender, K., et al., Understanding the factors that govern the deposition and morphology of thin films of ZnO from aqueous solution. Journal of Materials Chemistry, 2004. 14(16): p. 2575-2591. 63. Zeng, J.N., et al., Effect of deposition conditions on optical and electrical properties of ZnO films prepared by pulsed laser deposition. Applied surface science, 2002. 197: p. 362-367. 64. Kaidashev, E., et al., High electron mobility of epitaxial ZnO thin films on< equation> c</equation>-plane sapphire grown by multistep pulsed-laser deposition. Applied physics letters, 2003. 82(22): p. 3901-3903. 65. Kaufmann, U., et al., Nature of the 2.8 eV photoluminescence band in Mg doped GaN. Applied physics letters, 1998. 72(11): p. 1326-1328. 66. Djurišić, A.B., et al., ZnO nanostructures: growth, properties and applications. Journal of Materials Chemistry, 2012. 22(14): p. 6526-6535. 67. Tay, Y.Y., et al., Correlation between the characteristic green emissions and specific defects of ZnO. Physical Chemistry Chemical Physics, 2010. 12(10): p. 2373-2379. 68. Dutta, S., S. Basak, and P.K. Samanta, Journal of Chemical Engineering and Materials Science. Journal of Chemical Engineering and Materials Science Vol, 2012. 3(2): p. 18-22. 69. Hubler, D.B.C.a.G.K., Pulsed Laser Deposition of Thin Film. John Wiley & Sons, Inc., 1994. 70. Website, http://www.itrc.narl.org.tw/Research/Product/Vacuum/pld.php. 71. Singh, R.K. and J. Narayan, Pulsed-laser evaporation technique for deposition of thin films: Physics and theoretical model. Physical Review B, 1990. 41(13): p. 8843. 72. Huang, T. and J.S. Harris Jr, Growth of epitaxial AlGaN films by pulsed laser deposition. Applied physics letters, 1998. 72: p. 1158. 73. Mah, K., et al., Defect luminescence of GaN grown by pulsed laser deposition. Journal of crystal growth, 2001. 222(3): p. 497-502. 74. Kawaguchi, Y., et al., Room-temperature epitaxial growth of GaN on lattice-matched ZrB substrates by pulsed-laser deposition. Applied Physics Letters, 2005. 87: p. 221907. 75. Shin, H., et al., A study on growth characteristics of GaN layers grown by MOCVD on Si (111) substrate. JOURNAL-KOREAN PHYSICAL SOCIETY, 2003. 42: p. 403-407. 76. Liu, M., et al., The effect of nitrogen pressure on the two-step method deposition of GaN films. Applied Physics A: Materials Science & Processing, 2006. 85(1): p. 83-86. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/62853 | - |
dc.description.abstract | 本論文主要研究為利用水熱法製作高品質氧化鋅中介層及利用新式PLD在氧化鋅中介層上製作高品質之氮化鎵薄膜。在論文之中,我們首先介紹如何利用水熱法來製備出氧化鋅薄膜。接著我們將此氧化鋅中介層作為磊晶基板,利用新式PLD並調整不同氮氣操作氣壓對於氮化鎵薄膜特性的影響。
在製作高品質氧化鋅中介層部分,我們已經成功的利用水熱法調整不同生長溶液濃度及生長時間製造氧化鋅微奈米柱在氮化鎵磊晶層上,並利用化學動力學探討其在不同生長溶液濃度下氧化鋅微奈米柱體積與生長時間之關係: ,並成功找到合適的生長溶液濃度及生長時間可以製作出氧化鋅薄膜在氮化鎵磊晶層上。緊接著,我們利用AFM量測此薄膜之表面粗糙度,發現其表面粗糙度約在5.46 nm;然後利用EDS量測此薄膜組成之元素比例,發現到此薄膜為高純度之氧化鋅,無其他雜質摻雜在其中;除此之外,我們也利用XRD量測此氧化鋅薄膜的結晶性,結果發現此氧化鋅薄膜具有強烈的c軸取向且在氧化鋅(0001)晶格面之半高寬值為 ,此實驗結果可與利用PLD磊晶出的氧化鋅薄膜之結果不相上下,表示利用簡易且低溫的水熱法也可以製作出結晶品質相當好之氧化鋅薄膜,因此可以將此高品質氧化鋅薄膜應用在許多領域上;最後,我們更進一步地製作氧化鋅薄膜及p型氮化鎵磊晶層的發光元件,結果成功的得到具整流性的電流電壓曲線,在順向偏壓下,也發出了肉眼可見的可見光。 緊接著,我們將此高品質氧化鋅中介層作為磊晶基板,利用新式PLD沈積氮化鎵薄膜在其上。由於在沈積過程中,高能離子束會與環境中的氮氣發生碰撞或散射,此現象會大大影響氮化鎵薄膜之結晶性。然而我們找到當基板加熱溫度為900 oC、600 mJ/pluse的雷射能量、7 Hz的雷射重複頻率及氮氣操作氣壓在1x10-2 torr時,此氮化鎵薄膜在可見光範圍之平均透光度為87 %,且此條件下的氮化鎵薄膜元素比例也最為接近一比一,然而在此條件下所製作之薄膜不僅為c軸取向之單晶氮化鎵薄膜,且在(0002)面之半高寬值為2θ=0.293o,此數值與外界購買之氮化鎵基板((0002)面之半高寬值為2θ=0.301o)不相上下,除此之外,在此條件下的氮化鎵薄膜表面粗糙度為1.6312 nm,即表示此高品質氮化鎵薄膜相當平整。 | zh_TW |
dc.description.abstract | The study of this thesis is to investigate the hydrothermal method for growing high-quality zinc oxide thin film and the homemade pulsed laser deposition system for fabricating high-quality gallium nitride thin film on zinc oxide buffer layer. First, we introduce to obtain high-quality ZnO thin film via hydrothermal method. After that, we use homemade PLD to fabricate high-quality GaN thin film on ZnO buffer layer, and then the effect of nitrogen pressure on properties of GaN thin film is also investigated.
In the study of growing high-quality ZnO thin film, the ZnO thin film was successfully fabricated on the p-type GaN epilayer via the hydrothermal method. We successfully used chemical kinetics to simulate the relationship of the growth concentration and the growth time, thus determining the optimal conditions to fabricate the ZnO thin film on a p-type GaN epilayer. Subsequently, we used AFM, EDS, XRD, and Hall measurements to analyze the characteristics of the ZnO thin film. The roughness of the ZnO thin film is determined by AFM to be about 5.46 nm, where there is no other impurity detected in the EDS spectrum. Besides, under the growth temperature of 90°C and the growth concentration of 100mM for 6 hours, the XRD FWHM of ZnO (0001) shows =0.1682°, which is neck and neck with that fabricated by PLD. This means that it is possible to fabricate good quality ZnO thin film via a low cost hydrothermal method and it can be applied in many fields. We have further fabricated n-ZnO layer onto p-GaN layer to fabricate hetero-junction LEDs and successfully achieved a rectifying I-V curve and light emission from current injection. The EL emission of the LED is dominated in the ZnO layer. All results show that the ZnO thin film fabricated by the low-cost hydrothermal method has good potential for possible applications in the industry of light-emitting diodes and take the place of GaN for the material of emitting layer. Next, we use homemade pulsed laser deposition system to epitaxy high-quality gallium nitride thin film on zinc oxide buffer layer. During the deposition process, the high energy plume collides or scatters with nitrogen in atmosphere. This phenomenon greatly affected the crystalline of GaN thin film. The experimental data shows that the properties of GaN thin film fabricate under deposition condition substrate heating temperature 900 oC, laser energy 600mJ/pulsed, 7 Hz laser repetition frequency, and operating nitrogen pressure at 1x10-2 torr are very good. The UV-visible spectrum shows that average transmittance in the visible range is 87 % , and the EDS spectrum reveals that the element ratio of Ga and N is approach to 1:1. The XRD FWHM of the GaN (0002) thin film shows =0.293°, which is neck and neck with that deposited by MOCVD. Furthermore, the surface roughness of the GaN thin film is only 1.6312 nm. It means that this high-quality GaN thin film is also fairly flat. | en |
dc.description.provenance | Made available in DSpace on 2021-06-16T16:12:31Z (GMT). No. of bitstreams: 1 ntu-102-R99941084-1.pdf: 4465935 bytes, checksum: 3cf1a7b4c019b7964d0f168e5e2043b8 (MD5) Previous issue date: 2013 | en |
dc.description.tableofcontents | 口試委員審定書
致謝 I 摘要 III Abstract V 目錄 VIII 圖目錄 X 表目錄 XVI 第1章 緒論 1 1.1 簡介 1 1.2 發光二極體的發展 5 1.2.1 發光二極體的簡介 5 1.2.2 現今MOCVD發展之限制 11 1.3 研究動機 18 1.4 論文導覽 19 第2章 氧化鋅製備方法及實驗儀器介紹 20 2.1 氧化鋅材料簡介 20 2.2 水熱法簡介 26 2.3 實驗儀器的介紹與架設 30 第3章 在氮化鎵上製作氧化鋅微奈米結構及特性分析 40 3.1 實驗動機 40 3.2 實驗製作與流程 44 3.3 量測結果與討論 46 3.3.1 電子掃瞄式顯微鏡(SEM) 46 3.3.2 原子力顯微鏡(AFM)與元素組成比例(EDS) 55 3.3.3 X光繞射儀(XRD) 57 3.3.4 霍爾效應量測(Hall Effect measurement) 59 3.3.5 發光元件製作 60 3.4 結論 63 第4章 新式脈衝雷射沈積系統設計 64 4.1 前言 64 4.2 新式脈衝雷射沉積系統 70 4.2.1 設計理念 70 4.2.2 腔體介紹 72 第5章 利用新式脈衝雷射沈積系統沈積氮化鎵薄膜在氧化鋅緩衝層上 86 5.1 實驗動機 86 5.2 實驗製作與流程 87 5.3 實驗結果與討論 90 5.3.1 穿透率及能量散佈光譜儀(EDS) 93 5.3.2 X光繞射儀(XRD) 96 5.3.3 電子掃瞄式顯微鏡(SEM)及原子力顯微鏡(AFM) 98 5.4 結論 101 第6章 總結 102 6.1 論文回顧 102 6.2 未來展望 104 6.3 參考文獻 108 | |
dc.language.iso | zh-TW | |
dc.title | 利用脈衝雷射沈積系統製作氮化鎵磊晶層在氧化鋅緩衝層上及光電特性量測 | zh_TW |
dc.title | Fabricating Gallium Nitride Epilayer on Zinc Oxide Buffer Layer via Pulsed Laser Deposition System and Opto-electric Properties Analysis | en |
dc.type | Thesis | |
dc.date.schoolyear | 101-1 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 黃鼎偉(Ding-Wei Huang),李偉裕(Wei-Yu Lee),吳肇欣(Chao-Hsin Wu) | |
dc.subject.keyword | 水熱法,氧化鋅薄膜,脈衝雷射沈積系統,氮化鎵,氮氣操作氣壓, | zh_TW |
dc.subject.keyword | hydrothermal method,zinc oxide (ZnO),pulsed laser deposition (PLD),gallium nitride (GaN),nitrogen operating pressure, | en |
dc.relation.page | 114 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2013-02-18 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
顯示於系所單位: | 光電工程學研究所 |
文件中的檔案:
檔案 | 大小 | 格式 | |
---|---|---|---|
ntu-102-1.pdf 目前未授權公開取用 | 4.36 MB | Adobe PDF |
系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。